検索結果9件中 1-9 を表示

  • IWAMOTO Hayato ID: 9000002172639

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation (2007年 CiNii収録論文より)

    CiNii収録論文: 2件

    • Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET (2006)
    • In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET (2007)
  • Iwamoto Hayato ID: 9000019389020

    CiNii収録論文: 1件

    • Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2 Gate Dielectrics (2009)
  • Iwamoto Hayato ID: 9000019402228

    Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2006年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory (2006)
  • Iwamoto Hayato ID: 9000019432374

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2008年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment (2008)
  • Iwamoto Hayato ID: 9000019471228

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2008年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices (2008)
  • Iwamoto Hayato ID: 9000019542156

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2008年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping (2008)
  • Iwamoto Hayato ID: 9000019555158

    Semiconductor Technology Development Division, Consumer Products and Device Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2010年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process (2010)
  • Iwamoto Hayato ID: 9000019601190

    Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2007年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor (2007)
  • 岩本 隼人 ID: 9000018825864

    農林水産省普及教育課 (1996年 CiNii収録論文より)

    CiNii収録論文: 2件

    • 日米普及事業の最近の課題について (1995)
    • 持続的農業の経済・環境・社会に及ぼした影響 : アメリカの場合 (1996)
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