検索結果15件中 1-15 を表示

  • KADOMURA Shingo ID: 9000001158411

    LSI Technology Development Division, Semiconductor Network Company, SONY Corporation (2002年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Integration of High Performance CMOS Logic LSI by Applying Cu Wiring to SiLK^<T. M.>/SiO_2 Hybrid Structure (2002)
  • KADOMURA Shingo ID: 9000002165843

    Process Development Dept. 2, LSI Business &Technology Development Group, C.N.C., Sony Corporation (1999年 CiNii収録論文より)

    CiNii収録論文: 1件

    • A Reliable Interconnection Technology Using Organic Low-K Dielectrics for 0.18μm CMOS Circuit (1999)
  • KADOMURA Shingo ID: 9000002172640

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation (2007年 CiNii収録論文より)

    CiNii収録論文: 2件

    • Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET (2006)
    • In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET (2007)
  • Kadomura Shingo ID: 9000019389027

    CiNii収録論文: 1件

    • Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2 Gate Dielectrics (2009)
  • Kadomura Shingo ID: 9000019402236

    Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2006年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory (2006)
  • Kadomura Shingo ID: 9000019432410

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2008年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment (2008)
  • Kadomura Shingo ID: 9000019471251

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2008年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices (2008)
  • Kadomura Shingo ID: 9000019503100

    CiNii収録論文: 1件

    • Radiation Damage of SiO2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma (1994)
  • Kadomura Shingo ID: 9000019542162

    Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2008年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping (2008)
  • Kadomura Shingo ID: 9000019555166

    Semiconductor Technology Development Division, Consumer Products and Device Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2010年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process (2010)
  • Kadomura Shingo ID: 9000019561443

    CiNii収録論文: 1件

    • Etch Rate Acceleration of SiO2 during Wet Treatment after Gate Etching (1993)
  • Kadomura Shingo ID: 9000019601191

    Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan (2007年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor (2007)
  • Kadomura Shingo ID: 9000257840586

    LSI Technology Development Division, Semiconductor Network Company, SONY Corporation (2002年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Integration of High Performance CMOS Logic LSI by Applying Cu Wiring to SiLK<SUP>T.M.</SUP>/SiO<SUB>2</SUB> Hybrid Structure (2002)
  • Kadomura Shingo ID: 9000258121711

    ULSI R & D Laboratories, Sony Corporation, 4–14–1 Asahi–cho, Atsugi–shi, Kanagawa 243 (1994年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Radiation Damage of SiO2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma. (1994)
  • 門村 新吾 ID: 9000006192920

    ソニー(株) (2008年 CiNii収録論文より)

    CiNii収録論文: 9件

    • ECRプラズマCVD法によるTiN/Ti膜の形成とコンタクトへの適用 (1995)
    • バルクCMOS向け低閾値電圧・高移動度デュアルメタルゲートトランジスタの開発 (2006)
    • ECRプラズマCVD法によるTi製膜とコンタクトへの適用 (1996)

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