検索結果23件中 1-20 を表示

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  • OHZONE Takashi ID: 9000004812860

    Department of Electronics and Informatics, Toyama Prefectual University (1996年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90°and 45° (1996)
  • OHZONE Takashi ID: 9000004814991

    Department of Electronics and Informatics, Toyama Prefectural University (1997年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (1997)
  • Ohzone Takashi ID: 9000019328206

    Dawn Enterprise Co., Ltd., Nagoya 467-0808, Japan (2010年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Green Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin Coating of Terbium Organic Compounds on Silicon (2010)
  • Ohzone Takashi ID: 9000019339490

    Dawn Enterprise Co., Ltd., Nagoya 467-0808, Japan (2011年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Green/Red Electroluminescence from Metal--Oxide--Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon (2011)
  • Ohzone Takashi ID: 9000019450329

    CiNii収録論文: 1件

    • Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal–Oxide–Semiconductor Transistors (2004)
  • Ohzone Takashi ID: 9000019467112

    CiNii収録論文: 1件

    • Photocarrier Generation Rate Model of Textured Silicon Solar Cells (1997)
  • Ohzone Takashi ID: 9000019475186

    CiNii収録論文: 1件

    • Numerical Simulation of Silicon-on-Insulator Thin-Film Solar Cells (1995)
  • Ohzone Takashi ID: 9000019477738

    CiNii収録論文: 1件

    • Transport Equations for Homogeneous and Variable-Composition Semiconductor Devices at Low Temperatures (1996)
  • Ohzone Takashi ID: 9000019508093

    CiNii収録論文: 1件

    • Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates (2002)
  • Ohzone Takashi ID: 9000019514216

    CiNii収録論文: 1件

    • The Influence of Magnetic Plugging on RF Plasma Density (1996)
  • Ohzone Takashi ID: 9000019524834

    Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Kosugi-machi, Toyama 939-03, Japan (1998年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Impact of Surface Band Bending at the Rear Si–SiO2 Interface on Conversion Efficiency of Rear Locally-Contacted Silicon Solar Cells (1998)
  • Ohzone Takashi ID: 9000019550533

    Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan (2003年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal–Oxide–Semiconductor Transistors (2003)
  • Ohzone Takashi ID: 9000019575006

    CiNii収録論文: 1件

    • Quantum-Mechanical Simulation of Counter Doped Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Single Work Function Metal Gate (2002)
  • Ohzone Takashi ID: 9000019600268

    Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan (2006年 CiNii収録論文より)

    CiNii収録論文: 1件

    • An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal–Oxide–Semiconductor Transistors (2006)
  • Ohzone Takashi ID: 9000258133696

    Department of Electronics and Informatics, Toyama Prefectural University, Kurokawa, Kosugi–machi, Toyama 939–03, Japan (1997年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Photocarrier Generation Rate Model of Textured Silicon Solar Cells. (1997)
  • Ohzone Takashi ID: 9000258163476

    Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Kosugi-machi, Toyama 939-0398, Japan (2002年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates. (2002)
  • Ohzone Takashi ID: 9000258167606

    Department of Communication Engineering, Okayama Prefectural University (2003年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal-Oxide-Semiconductor Transistors (2003)
  • Ohzone Takashi ID: 9000258176601

    Department of Communication Engineering, Okayama Prefectural University (2004年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors (2004)
  • Ohzone Takashi ID: 9000264259094

    Dawn Enterprise Co., Ltd., Nagoya 467-0808, Japan. (2013年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Ultraviolet and white electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of gadolinium organic compounds on silicon (2013)
  • Ohzone Takashi ID: 9000329420160

    Dawn Enterprise Co., Ltd., Nagoya 467-0808, Japan. (2016年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Blue/pink/purple electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon (2016)
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