検索結果73件中 1-20 を表示

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  • UDA Satoshi ID: 9000004337803

    Institute for Materials Research, Tohoku University (1996年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Growth of Silicon Fibers Less Than 150μm in Diameter by Modified μ-PD-method (1996)
  • Uda Satoshi ID: 9000018202158

    CiNii収録論文: 1件

    • The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon (2011)
  • Uda Satoshi ID: 9000019267660

    CiNii収録論文: 1件

    • Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth (2013)
  • Uda Satoshi ID: 9000019294140

    CiNii収録論文: 1件

    • Consideration of Small Variation of Surface Acoustic Wave (SAW) Velocity in Lithium Tetraborate (1996)
  • Uda** Satoshi ID: 9000019313022

    CiNii収録論文: 1件

    • Distribution Coefficient of Rare-Earth Active Ions in Calcium Niobium Gallium Garnet (1995)
  • Uda Satoshi ID: 9000019330255

    CiNii収録論文: 1件

    • High Upconversion Intensity of Er3+ in a LaF3 Thin Film on CaF2 (111) Grown by the Molecular Beam Epitaxy Method (1997)
  • Uda Satoshi ID: 9000019334304

    Electronics Device R&D Center, Mitsubishi Material Co., Ltd., 2270-Yokoze, Chichibu, Saitama 368-8503, Japan (2001年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Characterization of Homogeneity of Langasite Wafers Using Bulk-Wave Measurement (2001)
  • Uda Satoshi ID: 9000019353018

    CiNii収録論文: 1件

    • Growth of Crack-Free 3-Inch-Diameter Lithium Tetraborate Single Crystals by Czochralski Method (1994)
  • Uda Satoshi ID: 9000019381922

    CiNii収録論文: 1件

    • Epitaxial Growth of Er3+-Doped CaF2 by Molecular Beam Epitaxy (1996)
  • Uda Satoshi ID: 9000019382656

    CiNii収録論文: 1件

    • Silicon Single Crystal Fiber Growth by Micro Pulling Down Method (1996)
  • Uda Satoshi ID: 9000019401053

    CiNii収録論文: 1件

    • Factors Influencing the Variation of Surface Acoustic Wave Velocity in Lithium Tetraborate (1997)
  • Uda Satoshi ID: 9000019427993

    CiNii収録論文: 1件

    • Mode of Occurrence and Cause of Cracking of Li2B4O7 Single Crystals during Growth by Czochralski Method (1993)
  • Uda Satoshi ID: 9000019440894

    Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan (2009年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals (2009)
  • Uda Satoshi ID: 9000019442375

    CiNii収録論文: 1件

    • Origin of SiC Precipitation during the Micro-Pulling-Down Processing of Si–Ge Fibers (1997)
  • Uda Satoshi ID: 9000019444776

    CiNii収録論文: 1件

    • Nonlinear Optical Properties of Langasite Crystal (1997)
  • Uda** Satoshi ID: 9000019476573

    CiNii収録論文: 1件

    • Considerations on Growth Parameters for Dynamic Congruent-State Growth of LiNbO3 (1995)
  • Uda Satoshi ID: 9000019479813

    CiNii収録論文: 1件

    • Growth of Twinned Lithium Tetraborate Crystal and its Application to Bimorph Actuator (1996)
  • Uda Satoshi ID: 9000019497462

    CiNii収録論文: 1件

    • Growth of 3-inch Langasite Single Crystal and Its Application to Substrate for Surface Acoustic Wave Filters (1999)
  • Uda Satoshi ID: 9000019502933

    CiNii収録論文: 1件

    • A New Nondestructive Evaluation Method for Surface Acoustic Wave Velocity (2000)
  • Uda Satoshi ID: 9000019506586

    CiNii収録論文: 1件

    • Growth of Ga1-xBxN by Molecular Beam Epitaxy (1997)
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