Search Results:　 1-20 of 1391

Kasada Ryuta , Takayama Yoshiyuki , Yabuuchi Kiyohiro , Kimura Akihiko

… The constant stiffness measurement (CSM) was used to obtain the depth-profile of hardness. … The depth-sensing nano-indentation techniques with CSM revealed that the hardness gradient of the unirradiated Fe-based model alloy can be explained through the indentation size effect (ISE). … We propose a new approach to evaluate a nominal hardness, which may connect to the bulk hardness, from experimentally obtained nano-hardness depth profile data. …

Fusion Engineering and Design 86(9-11), 2658-2661, 2011-10

IR CrossRef

Anwar Miftahul , Kawai Yuya , Moraru Daniel , Nowak Roland , Jablonski Ryszard , Mizuno Takeshi , Tabe Michiharu

… We observed local changes of the potential profile with increasing backgate voltage, indicating electron injection in the channel. … Single-step changes in the depth of the fine potential wells, observed by changing backgate voltage, are ascribed to single-electron charging in individual donors. …

Jpn J Appl Phys 50(8), 08LB10-08LB10-4, 2011-08-25

IR The Japan Society of Applied Physics

Ino Tomohisa , Hayashi Tatsuya , Ueno Keiji , Shirai Hajime

… Depth profiles of the optical constants, carrier mobility, and carrier density of spin-coated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films were investigated by real-time characterization by spectroscopic ellipsometry (SE) during argon plasma etching at atmospheric pressure. …

Jpn J Appl Phys 50(8), 08JG02-08JG02-5, 2011-08-25

The Japan Society of Applied Physics

Eriguchi Koji , Takao Yoshinori , Ono Kouichi

… Assuming that the damaged layer was formed during a gate or an offset spacer etch process, the depth of Si recess (dR) is a function of the depth profile of the created defect site (ndam), the wet-etch stripping time (tw), and the energy of the incident ion. …

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29(4), 2011-06

IR CrossRef

KINOSHITA Shohei , TSUJI Hiroshi , ARAI Nobutoshi , GOTOH Yasuhito

… X-ray photoelectron spectroscopy (XPS) was used to analyze Ge profile of the 60° implantation sample, and photoluminescence (PL) was studied. … PL intensity from 60° and 45° tilt type sample were stronger than that from 30° tilt type, therefore we investigated that light emission center would be created in the shallow depth less than 25 nm. …

Journal of the Vacuum Society of Japan 54(3), 213-216, 2011-03-20

J-STAGE CrossRef References (7)

Nakayama Koji , Nakatani Kimihiko , Khamseh Sara , Mori Masayuki , Maezawa Koichi

… We investigated the in-depth profile of electrical properties of InSb films grown on Si(111) substrates using various InSb bilayers. … In the growth procedure, the 1st layer was deposited using at a low growth rate of about 1 $Å$/min. The in-depth profile of the electrical properties of the InSb films was obtained by reciprocally repeated chemical etching and Hall measurement. …

Jpn J Appl Phys 50(1), 01BF01-01BF01-4, 2011-01-25

The Japan Society of Applied Physics

Sagapoa Christopher V. , Imai Akira , Watanabe Koichiro

… However, nickel becomes unstable and is leached towards the lower part of the profile and concentrated at the saprolitic zone. … Significant supergene nickel enrichment occurring in the decomposed zone, indicating that water had percolated downward to a very low water table at depth during the wearhering process. … Cobalt and manganese are concentrated in the limonitic part of the profiles (~3-6m depth) of which are poorly protected against erosion and mechanical transportation. …

Journal of novel carbon resource sciences 3, 32-39, 2011-02

IR

Ino Tomohisa , Hayashi Tatsuya , Ueno Keiji [他]

Japanese journal of applied physics 50(8), 08JG02-1-5, 2011-08

石橋 達弥 , Ohki Motofumi , ?木 智史 [他]

Journal of Material Testing Research Association of Japan 56(2), 54-63, 2011-04