CiNii Articles - Epitaxy

1

Crystalline Oxide Thin Film Fabrication Using Crystal Contact Epitaxy Technique [in Japanese]

NOGE Satoru , KONISHI Kentaro

This paper presents am ethod for the growth of oxide single crystal thin films on anamorphous substrate. At the first, we investigated growth of a cerium substituted YIG(Ce:YIG) single crystal film on …

Memoirs of Numazu College of Technology 47, 381-384, 2013-01-31

CiNii Fulltext PDF - Open Access
2

Selective Growth of GaN Rods on the Apex of GaN Pyramids by Metal Organic Vapor Phase Epitaxy

Yun Wy Il , Lee Hyo Jong , Shin Kee Sam , Park Jung Sik , Yu Young Moon , Lee Jeung Woo , Lee Gang Suok , Ahn Hyung Soo , Yang Min

… SiO2 near the apex of the hexagonal GaN pyramids was removed by an optimized photolithography process and subsequently subjected to Au deposition and selective growth of GaN rods by metal organic vapor phase epitaxy (MOVPE). …

Jpn J Appl Phys 52(1), 01AF02-01AF02-3, 2013-01-25

The Japan Society of Applied Physics
3

Analysis of Dislocations Generated during Metal--Organic Vapor Phase Epitaxy of GaN on Patterned Templates

Suihkonen Sami , Ali Muhammad , Törmä Pekka T. , Sintonen Sakari , Svensk Olli , Sopanen Markku , Lipsanen Harri , Nevedomsky Vladimir N. , Bert Nikolay A.

… We report on patterning and subsequent metal--organic vapor phase epitaxy overgrowth of GaN films on patterned GaN/sapphire templates. …

Jpn J Appl Phys 52(1), 01AF01-01AF01-3, 2013-01-25

The Japan Society of Applied Physics
4

Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots

Kim Minji , Shin Min Jeong , Gwon Dongoh , Ahn Hyung Soo , Yi Sam Nyung , Kim Pan Seok , Yoon Sung Cheol , Lee Changjin , Park Jungsik , Shin Keesam , Ha Dong Han , Sawaki Nobuhiko

… The growth of GaN QDs was achieved by the hydride vapor phase epitaxy (HVPE) technique and P3HT film sequentially was coated on the top of QDs. …

Jpn J Appl Phys 52(1), 01AD02-01AD02-4, 2013-01-25

The Japan Society of Applied Physics
5

Confinement of Optical Phonons Observed by Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns

Sekine Tomoyuki , Suzuki Shintaro , Kikuchi Akihiko , Kishino Katsumi

… We have studied phonon modes in GaN/AlN multiple quantum disk nanocolumns, which are self-organized on Al2O3 and Si substrates by rf-plasma-assisted molecular beam epitaxy, by means of Raman scattering. …

J Phys Soc Jpn 82(1), 014604-014604-7, 2013-01-15

The Japan Society of Applied Physics
6

Selective Growth of GaN Rods on the Apex of GaN Pyramids by Metal Organic Vapor Phase Epitaxy (Special Issue : Advanced Plasma Science and its Applications for Nitrides and Nanomaterials)

Yun Wy Il , Lee Hyo Jong , Shin Kee Sam 他

Japanese journal of applied physics : JJAP 52(1), 01AF02-1-3, 2013-01-00
7

Analysis of Dislocations Generated during Metal-Organic Vapor Phase Epitaxy of GaN on Patterned Templates (Special Issue : Advanced Plasma Science and its Applications for Nitrides and Nanomaterials)

Suihkonen Sami , Ali Muhammad , Torma Pekka T. 他

Japanese journal of applied physics : JJAP 52(1), 01AF01-1-3, 2013-01-00
8

Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique [in Japanese]

田之上文彦 , 菅原宏治 , 赤羽浩一他

電子情報通信学会技術研究報告 : 信学技報 112(356), 1-4, 2012-12-13
9

New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Shin In-Su , Wang Ke , Araki Tsutomu 他

Applied physics express : APEX 5(12), 125503-1-3, 2012-12-00
10

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Nagashima Toru , Kubota Yuki , Kinoshita Toru 他

Applied physics express : APEX 5(12), 125501-1-3, 2012-12-00
11

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Kinoshita Toru , Hironaka Keiichiro , Obata Toshiyuki 他

Applied physics express : APEX 5(12), 122101-1-3, 2012-12-00
12

Nitridation- and Buffer-Layer-Free Growth of <1100>-Oriented GaN Domains on m-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy

Seo Yeonwoo , Lee Sanghwa , Jue Miyeon 他

Applied physics express : APEX 5(12), 121001-1-3, 2012-12-00
13

Electronic conduction at the interfaces of complex oxide heterojunctions [in Japanese]

大友明

応用物理 81(12), 1002-1008, 2012-12-00
14

Molecular Beam Epitaxy of Semiconducting Gallium Oxide and its Application to Schottky Barrier Diodes [in Japanese]

佐々木公平 , 倉又朗人 , 増井建和他

機能材料 32(12), 20-26, 2012-12-00
15

Fabrication of red light emitting diode with GaN:Eu,Mg active layer [in Japanese]

大谷龍輝 , 関口寛人 , 高木康文他

電子情報通信学会技術研究報告 : 信学技報 112(329), 65-70, 2012-11-29
16

Fabrication of red light emitting diode with GaN:Eu,Mg active layer [in Japanese]

大谷龍輝 , 関口寛人 , 高木康文他

電子情報通信学会技術研究報告 : 信学技報 112(328), 65-70, 2012-11-29
17

Fabrication of red light emitting diode with GaN:Eu,Mg active layer [in Japanese]

大谷龍輝 , 関口寛人 , 高木康文他

電子情報通信学会技術研究報告 : 信学技報 112(327), 65-70, 2012-11-29
18

N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates

Ivana , Subramanian Sujith , Owen Man Hon Samuel , Tan Kian Hua , Loke Wan Khai , Wicaksono Satrio , Yoon Soon Fatt , Yeo Yee-Chia

… Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. …

Applied Physics Express 5(11), 116502-116502-3, 2012-11-25

The Japan Society of Applied Physics
19

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Skierbiszewski Czeslaw , Siekacz Marcin , Turski Henryk , Muziol Grzegorz , Sawicka Marta , Wolny Pawel , Cywiński Grzegorz , Marona Lucja , Perlin Piotr , Wiśniewski Przemysław , Albrecht Martin , Wasilewski Zbigniew R. , Porowski Sylwester

… We demonstrate true-blue (450--460 nm) nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE) on c-plane GaN substrates operating in continuous wave mode. …

Applied Physics Express 5(11), 112103-112103-3, 2012-11-25

The Japan Society of Applied Physics
20

Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

Dasgupta Sansaptak , Nidhi , Wu Feng , Speck James S. , Mishra Umesh K.

… Smooth N-polar GaN films were epitaxially grown by plasma assisted molecular beam epitaxy (PAMBE) on on-axis p-Si(111). …

Jpn J Appl Phys 51(11), 115503-115503-5, 2012-11-25

The Japan Society of Applied Physics

Search Results:　 1-20 of 5431

Related Authors

Related Journals

Search Results: 1-20 of 5431

Related Authors

Related Journals

Search Results:　 1-20 of 5431