Search Results:　 1-20 of 18339

Sameshima Toshiyuki , Ebina Ryoko , Betsuin Koichi , Takiguchi Yuta , Hasumi Masahiko

… A simple annealing method using a commercial 2.45 GHz microwave oven is reported to increase the minority carrier lifetime \tau_{\text{eff}} for 4-in.-size 500-μm-thick 20 \Omega cm n-type silicon substrates coated with 100-nm-thermally grown SiO2 layers. … The finite element numerical analysis revealed that Ar plasma irradiation caused high densities of recombination defect states at the silicon top surface in the range from 1.3\times 10^{13} to 5.0\times 10^{13} cm-2. …

Jpn J Appl Phys 52(1), 011801-011801-6, 2013-01-25

The Japan Society of Applied Physics

中原 明仁 , 吉田 潤 , 岡田 雅之

電気学会論文誌. D, 産業応用部門誌 = IEEJ transactions on industry applications 133(1), 50-55, 2013-01-00

鈴木 智久 , 寺崎 健 , 田中 俊明 [他]

エレクトロニクス実装学会誌 = Journal of the Japan Institute of Electronics Packaging 16(1), 70-76, 2013-01-00

森元 瑛樹 , 平田 勝弘 , 新口 昇

電気学会研究会資料. MD 2012(78-88), 35-39, 2012-12-14

GAO Haifeng , MATSUMOTO Toshiro , TAKAHASHI Toru [他]

計算数理工学論文集 12, 67-72, 2012-12-00

荒井 政大 , 諏訪 貴昭 , 長谷 智行 [他]

計算数理工学論文集 12, 25-30, 2012-12-00

田中 ひかり , 増田 潔

騒音制御 36(6), 425-434, 2012-12-00

Honma Hiroaki , Takahashi Kazuhiro , Ishida Makoto , Sawada Kazuaki

… Our finite element method (FEM) simulation results indicate that the drive voltage is decreased by 10 V, as compared to that of the previously reported GV type. …

Jpn J Appl Phys 51(11), 11PA01-11PA01-4, 2012-11-25

The Japan Society of Applied Physics