Search Results:　 1-20 of 12777

Dai Van-Truong , Lin Sheng-Di , Lin Shih-Wei , Wu Jau-Yang , Li Liang-Chen , Lee Chien-Ping

… A lateral two-dimensional p--i--n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. …

Jpn J Appl Phys 52(1), 014001-014001-4, 2013-01-25

The Japan Society of Applied Physics

Won Jaehyuk , Shin Jinsik , Lee Sangyeop , Yoo Taehee , Lee Hakjoon , Lee Sanghoon , Liu Xinyu , Furdyna Jacek

… We have investigated a uniaxial anisotropy along the [100] direction of GaMnAs film grown on (001) GaAs. …

Applied Physics Express 6(1), 013001-013001-4, 2013-01-25

The Japan Society of Applied Physics

Jin Xiuguang , Mano Atsushi , Ichihashi Fumiaki 他

Applied physics express : APEX 6(1), 015801-1-3, 2013-01-00

田崎 悟史 , 高山 洋一郎 , 石川 亮 他

電子情報通信学会技術研究報告 : 信学技報 112(355), 1-6, 2012-12-13

Yokota Nobuhide , Tsunemi Yoshihiro , Ikeda Kazuhiro 他

Applied physics express : APEX 5(12), 122401-1-3, 2012-12-00

梁 剣波 , 重川 直輝 , 日暮 栄治

電子情報通信学会技術研究報告 : 信学技報 112(328), 1-5, 2012-11-29

Kawazu Takuya , Noda Takeshi , Mano Takaaki , Sakuma Yoshiki , Sakaki Hiroyuki

… We studied the effects of Sb/As interdiffusion on the optical anisotropy of GaSb quantum dots (QDs) in GaAs. …

Jpn J Appl Phys 51(11), 115201-115201-4, 2012-11-25

The Japan Society of Applied Physics

Motohisa Junichi , Hiruma Kenji

… A general tendency of the light absorption in NW arrays in relation to their structural parameters, such as the pitch a of an NW array and the size d of an NW, was identified, and the differences between the optimum structural parameters of NW arrays in terms of light absorption in the cases of InP, GaAs, Si, and Ge were determined. … The maximum \eta was obtained for a= 375, 350, 700, and 400 nm, for InP, GaAs, Si, and Ge NW arrays with d/a=0.5, respectively. …

Jpn J Appl Phys 51(11), 11PE07-11PE07-7, 2012-11-25

The Japan Society of Applied Physics

Fuyuki Takuma , Kashiyama Shota , Oe Kunishige , Yoshimoto Masahiro

… The characteristics of interface states in a GaAs/GaAs1-xBix heterointerface have been evaluated by capacitance--frequency measurements, thermal admittance spectroscopy, and isothermal capacitance transient spectroscopy. … The large density is probably caused by the fact that the surface of GaAs and GaAs1-xBix are shown to be nonmetallic and metallic, respectively. …

Jpn J Appl Phys 51(11), 11PC02-11PC02-5, 2012-11-25

The Japan Society of Applied Physics

Guo Qixin , Shi Wangzhou , Liu Feng , Nakao Tomoya , Saito Katsuhiko , Tanaka Tooru , Nishio Mitsuhiro

… It was demonstrated that the Ga composition in the GaInN films can be controlled by varying the ratio of the applied RF power of the indium target to that of the GaAs target. …

Jpn J Appl Phys 51(11), 118004-118004-2, 2012-11-25

The Japan Society of Applied Physics