Search Results:  1-20 of 1923

  • 1

    Characteristics of a liquid microlayer formed by a confined vapor bubble in micro gap boiling between two parallel plates

    Zhang Yaohua , Utaka Yoshio

    … The effects of gap sizes, the velocity of the bubble forefront, and the distance from the bubble inception site were investigated. … Furthermore, the progress of bubble growth in two dimensions with acceleration was simulated by the volume of fluid (VOF) method using the computational fluid dynamics (CFD) package of FLUENT12.1. … The microlayer thickness calculated from the simulation results shows relatively good agreement with the experimental results. …

    International Journal of Heat and Mass Transfer 84, 475-485, 2015-05

    IR

  • 2

    Room-temperature electroluminescence from radial p–i–n InP/InAsP/InP nanowire heterostructures in the 1.5-µm-wavelength region

    Kawaguchi Kenichi , Sudo Hisao , Matsuda Manabu , Ekawa Mitsuru , Yamamoto Tsuyoshi , Arakawa Yasuhiko

    … Crystal growth of radial p–i–n InP nanowires (NWs) with InAsP quantum well (QW) layers by metalorganic vapor-phase epitaxy was studied, and vertical NW light-emitting devices were fabricated. … The fabricated devices showed current rectification originating from the p–i–n diode structures. … Electroluminescence from the radial QWs was clearly observed in the 1.5-µm-wavelength region at room temperature for the first time. …

    Jpn. J. Appl. Phys. 54(4S), 04DN02, 2015-02-16

    JSAP

  • 3

    Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE

    Ishizaka Fumiya , Hiraya Yoshihiro , Tomioka Katsuhiro , Fukui Takashi

    … A GaP nanowire is promising from the viewpoint of device applications because when its crystal phase is changed from zinc blende (ZB) to wurtzite (WZ), its band gap changes from indirect to direct. … Here we report on the growth of WZ GaP in InP/GaP core-shell nanowires by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). …

    Journal of crystal growth 411, 71-75, 2015-02-01

    IR CrossRef

  • 4

    On heat transfer and evaporation characteristics in the growth process of a bubble with microlayer structure during nucleate boiling

    Chen Zhihao , Utaka Yoshio

    … The initial microlayer thickness was of micrometer order and increased linearly with distance from the bubble inception site. … The quantitative degree of contribution of the microlayer evaporation to bubble growth was still not elucidated, although a large number of experimental studies have been conducted on the distribution and evaporation characteristics of the microlayer. …

    International Journal of Heat and Mass Transfer 81, 750-759, 2015-02

    IR

  • 5

    Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

    Masumoto Keiko , Asamizu Hirokuni , Tamura Kentaro , Kudou Chiaki , Nishio Johji , Kojima Kazutoshi , Ohno Toshiyuki , Okumura Hajime

    … The 3C inclusions were caused by 3C-SiC particles, which were present on the substrates before epitaxial growth, or which had fallen onto the substrates during epitaxial growth from the inside walls of a chemical vapor deposition reactor. … The 3C-inclusion density decreased when the in-situ H<inf>2</inf>etching depth exceeded 0.4 µm because the 3C-SiC particles, which were present on substrates before epitaxial growth, were removed. …

    Jpn. J. Appl. Phys. 54(4S), 04DP04, 2015-01-28

    JSAP

  • 6

    P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

    Yokoyama Haruki , Hoshi Takuya

    … The electrical characteristics of Si-doped GaAsSb layers grown at various growth temperatures from 530 to 630 °C by metalorganic chemical vapor deposition (MOCVD), are investigated. …

    Jpn. J. Appl. Phys. 54(1), 015506, 2014-12-22

    JSAP

  • 7

    Bubble evolution and properties in homogeneous nucleation simulations

    Angelil Raymond , Diemand Juerg , Tanaka Kyoko K. , Tanaka Hidekazu

    … We analyze the properties of naturally formed nanobubbles in Lennard-Jones molecular dynamics simulations of liquid-to-vapor nucleation in the boiling and the cavitation regimes. … The large computational volumes provide a realistic environment at unchanging average temperature and liquid pressure, which allows us to accurately measure properties of bubbles from their inception as stable, critically sized bubbles, to their continued growth into the constant speed regime. …

    Physical review E 90(6), 63301, 2014-12-01

    IR CrossRef

  • 8

    Direct simulations of homogeneous bubble nucleation: Agreement with classical nucleation theory and no local hot spots

    Diemand Juerg , Angelil Raymond , Tanaka Kyoko K. , Tanaka Hidekazu

    … We present results from direct, large-scale molecular dynamics simulations of homogeneous bubble (liquid-to-vapor) nucleation. … The unprecedented size of the simulated volumes allows us to resolve the nucleation and growth of many bubbles per run in simple direct micro-canonical simulations while the ambient pressure and temperature remain almost perfectly constant. …

    Physical review E 90(5), 52407, 2014-11-21

    IR CrossRef

  • 9

    Antifungal activity of 1-phenyl-3-pentanone produced by Mycoleptodonoides aitchisonii against plant-pathogenic fungi

    OKA Kumiko , SHIMOMURA Norihiro , MAEKAWA Nitaro , NAKAGIRI Akira , OTANI Hiroshi

    食用きのこのブナハリタケは植物病原糸状菌に抗菌活性を示す揮発性物質の1-phenyl-3-pentanone(PP)を生産する.PPの抗菌スペクトラムおよび有効濃度を明らかにするため,植物病原糸状菌のAlternaria alternata Japanese pear pathotype,A. brassicicola, Bipolaris sorokiniana,Botrytis cinerea …

    日本きのこ学会誌 : mushroom science and biotechnology 22(3), 95-100, 2014-10-31

    CiNii Fulltext PDF - Paid 

  • 10

    First-principles simulation of the chemical reactions in GaN growth from Ga

    Yamamoto Masahiro , Hamada Noriaki

    … The intrinsic reaction coordinates (IRC) have been searched for and the reaction path from Ga<inf>2</inf>O, which is a raw material of GaN, has been clarified. … There is no residual solid product in the vapor process apart from GaN and the deposition on the chamber wall can be reduced. … Thus, long-time continuous crystal growth can be executed. …

    Jpn. J. Appl. Phys. 53(11), 115601, 2014-10-08

    JSAP

  • 11

    Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition

    Chao Chung-Hua , Wei Da-Hua

    … Non-polar coexisting m-plane ([Formula: see text]) and a-plane ([Formula: see text]) zinc oxide (ZnO) thin films have been synthesized onto commercial silicon (100) substrates by using plasma enhanced chemical vapor deposition (PECVD) system at different working pressures. … From the X-ray diffraction patterns, the non-polar ZnO thin films were successfully synthesized at the working pressures of 6 and 9 Torr, respectively. …

    Jpn. J. Appl. Phys. 53(11S), 11RA05, 2014-10-01

    JSAP

  • 12

    High nitrogen pressure solution growth of GaN

    Bockowski Michal

    … Results of GaN growth from gallium solution under high nitrogen pressure are presented. … Basic of the high nitrogen pressure solution (HNPS) growth method is described. … A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. …

    Jpn. J. Appl. Phys. 53(10), 100203, 2014-09-08

    JSAP

  • 13

    Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

    Aisaka Takashi , Tanikawa Tomoyuki , Kimura Takeshi , Shojiki Kanako , Hanada Takashi , Katayama Ryuji , Matsuoka Takashi

    … Indium was introduced as a surfactant during metalorganic vapor phase epitaxial growth of nitrogen-polar GaN on c-plane sapphire tilted from 0.2 to 1.0° … For each sample with different tilted angle, the surfactant effect was confirmed from a scanning electron microscope and an atomic force microscope observations. … Therefore, it was confirmed that indium introduced during the nitrogen-polar GaN growth surely plays a role as a surfactant. …

    Jpn. J. Appl. Phys. 53(8), 085501, 2014-07-09

    JSAP

  • 14

    Growth of uniform carbon thin film containing nanocrystalline graphene clusters from evaporated palm oil by thermal chemical vapor deposition

    Rahman Shaharin , Mahmood Mohamad , Hashim Abdul

    Jpn. J. Appl. Phys. 53(7), 075101, 2014-06-13

    JSAP

  • 15

    Fabrication of hafnium oxide using room-temperature atomic layer deposition  [in Japanese]

    Kanomata Kensaku , Ohba Hisashi , Arima Bashil Ahmmad , Kubota Shigeru , Hirahara Kazuhiro , Hirose Fumihiko

    我々はtetrakis(ethylmethylamino)hafnium(TEMAH)とプラズマ励起された酸素含有水蒸気を用いたハフニウム酸化膜の室温原子層堆積法を開発した。プラズマ励起酸素・水蒸気は酸化ハフニウム表面に吸着したTEMAHを効果的に酸化すると同時にTEMAHの吸着サイトとなるOH基を室温で成長表面上に形成する。本方法では、ハフニウム酸化膜の成長速度は室温において0.26nm/cyc …

    IEICE technical report. Electron devices 114(12), 51-54, 2014-04-10

    CiNii Fulltext PDF - Limited 

  • 16

    Molecular dynamics simulations of the nucleation of water: Determining the sticking probability and formation energy of a cluster

    Tanaka Kyoko K. , Kawano Akio , Tanaka Hidekazu

    … We performed molecular dynamics simulations of the nucleation of water vapor in order to test nucleation theories. … We obtained the nucleation rates and the formation free energies of a subcritical cluster from the cluster size distribution. …

    Journal of Chemical Physics 140(11), 114302, 2014-03-21

    IR CrossRef

  • 17

    29pAP-2 Growth kinetics of elementary steps of ice crystals grown from water vapor  [in Japanese]

    Asakawa Harutoshi , Sazaki Gen , Yokoyama Etsuro , Nagashima Ken , Nakatsubo Shunichi , Furukawa Yoshinori

    Meeting abstracts of the Physical Society of Japan 69(1-4), 897, 2014-03-05

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  • 18

    Developments of Self-alignment Process for Few Layers of Graphene with Low Gas Pressure and Short Deposition Time

    河原 敏男||カワハラ トシオ||Kawahara Toshio , 玉田 敦子||タマダ アツコ||Tamada Atsuko

    … Depending on the growth condition, the grapho-epitaxy can enhance the graphene layers growth. … In this paper, we have deposited carbon materials by chemical vapor deposition with low gas pressure and short deposition time for the search of graphene growth. … From Raman spectra, moderate range of growth condition is better for the nano carbon growth. …

    総合工学 26, 24-30, 2014-03

    IR

  • 19

    Luminescence property of hexagonal boron nitride films grown by high-temperature CVD  [in Japanese]

    UMEHARA Naoki , KUWAHARA Iori , LEE Hey-Young , KOUNO Tetsuya , KOMINAMI Hiroko , NAKANISHI Yoichiro , HARA Kazuhiko

    BCl_3とNH_3を原料とする常圧の化学気相法を用いて,c面サファイア基板上に六方晶窒化ホウ素(h-BN)薄膜の作製を行った.成長温度は1300〜1700℃であり,同じ温度でNH_3による基板表面の窒化を行った後に成長を開始した.X線回折の成長温度依存性から,成長温度の上昇に伴い結晶化が促進され,1500℃でc軸に強く配向した薄膜が得られた,しかしさらに高い温度では,過度の基板窒化による結晶性の …

    IEICE technical report. Electronic information displays 113(408), 25-28, 2014-01-17

    CiNii Fulltext PDF - Limited 

  • 20

    Evapotranspiration Model Analysis of Crop Water Use in Plant Factory System

    PAMUNGKAS Agung Putra , HATOU Kenji , MORIMOTO Tetsuo

    … The model requires some climatic data (e.g., solar radiation, air temperature, relative humidity, and wind speed) and plant growth parameters (leaf area index) as inputs. … In this study, the observed data were obtained from an experimental greenhouse located at the Ehime University, Japan. … The results showed that solar radiation and vapor pressure deficit are important factors driving the <I>ET</I> …

    Environmental Control in Biology 52(3), 183-188, 2014

    J-STAGE CrossRef