Search Results 1-20 of 2063

  • Novel integration method for III–V semiconductor devices on silicon platform

    Matsumoto Keiichi , Kishikawa Junya , Nishiyama Tetsuo , Onuki Yuya , Shimomura Kazuhiko

    … Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. … After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. … Furthermore, almost no lattice strain was observed from the InP layer. …

    Jpn. J. Appl. Phys. 55(11), 112201, 2016-09-29


  • Solution-based mist CVD technique for CH

    Nishinaka Hiroyuki , Yoshimoto Masahiro

    … We report the growth of inorganic–organic perovskites using a solution-based mist chemical vapor deposition (mist CVD) technique and the successful growth of the alloying CH<inf>3</inf>NH<inf>3</inf>Pb(Br<inf>1−</inf><inf>x</inf>Cl<inf>x</inf>)<inf>3</inf>using mixture solutions of Br and Cl precursors. …

    Jpn. J. Appl. Phys. 55(10), 100308, 2016-09-23


  • Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

    Rajesh Mohan , Nishioka Masao , Arakawa Yasuhiko

    … We report the first demonstration of electroluminescence at 1.3 µm from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). … The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. …

    Jpn. J. Appl. Phys. 55(10), 100304, 2016-09-15


  • Growth of Single-Walled Carbon Nanotubes from Diamond Crystals Synthesized by Chemical Vapor Deposition  [in Japanese]

    石川 豊 , 長谷川 光斗

    表面技術 = Journal of the Surface Finishing Society of Japan 67(7), 380-382, 2016-07

  • Thin film deposition at atmospheric pressure using dielectric barrier discharges: Advances on three-dimensional porous substrates and functional coatings

    Fanelli Fiorenza , Bosso Piera , Mastrangelo Anna , Fracassi Francesco

    … Surface processing of materials by atmospheric pressure dielectric barrier discharges (DBDs) has experienced significant growth in recent years. … Considerable research efforts have been directed for instance to develop a large variety of processes which exploit different DBD electrode geometries for the direct and remote deposition of thin films from precursors in gas, vapor and aerosol form. …

    Jpn. J. Appl. Phys. 55(7S2), 07LA01, 2016-06-15


  • Preparation of hydrogenated diamond-like carbon films using high-density pulsed plasmas of Ar/C

    Kimura Takashi , Kamata Hikaru

    … Hydrogenated diamond-like carbon films are prepared using reactive high-density pulsed plasmas of Ar/C<inf>2</inf>H<inf>2</inf>and Ne/C<inf>2</inf>H<inf>2</inf>mixture in the total pressure range from 0.5 to 2 Pa. …

    Jpn. J. Appl. Phys. 55(7S2), 07LE02, 2016-06-10


  • Growth and optical properties of Nb-doped WS

    Sasaki Shogo , Kobayashi Yu , Liu Zheng , Suenaga Kazutomo , Maniwa Yutaka , Miyauchi Yuhei , Miyata Yasumitsu

    … We report the chemical vapor deposition growth of Nb-doped WS<inf>2</inf>monolayers and their characterization. … These results indicate that the observed PL peaks are assignable to the emission from impurity states generated by the substitution of Nb. …

    Appl. Phys. Express 9(7), 071201, 2016-06-02


  • Metal–organic chemical vapor deposition growth of β-FeSi

    Akiyama Kensuke , Motoizumi Yuu , Funakubo Hiroshi , Irie Hiroshi , Matsumoto Yoshihisa

    … Semiconducting iron disilicide (β-FeSi<inf>2</inf>) island grains of a few hundred nanometers in diameter were formed on the surface of Si powder by metal–organic chemical vapor deposition. … The dramatic decrease in the defect density in β-FeSi<inf>2</inf>, which was due to this growth mechanism, was confirmed by the photoluminescence properties. …

    Jpn. J. Appl. Phys. 55(6S2), 06HC02, 2016-05-20


  • Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

    Zhu W. , Mitchell B. , Timmerman D. , Uedono A. , Koizumi A. , Fujiwara Y.

    … The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. … By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. …

    APL Materials 4(5), 056103, 2016-05

    IR CrossRef

  • Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

    Lin Chia-Hung , Yasui Daiki , Tamaki Shinya , Miyake Hideto , Hiramatsu Kazumasa

    … Single-crystal a-plane AlN[Formula: see text] films were grown on r-plane sapphire [Formula: see text] substrates by hydride vapor phase epitaxy (HVPE). … The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the NH<inf>3</inf>preflow time. …

    Jpn. J. Appl. Phys. 55(5S), 05FA12, 2016-04-21


  • Influences of growth parameters on the film formation of hexagonal boron nitride thin films grown on sapphire substrates by low-pressure chemical vapor deposition

    Umehara Naoki , Masuda Atsushi , Shimizu Takaki , Kuwahara Iori , Kouno Tetsuya , Kominami Hiroko , Hara Kazuhiko

    … Hexagonal boron nitride (h-BN) films were grown on c-plane sapphire substrates by low-pressure chemical vapor deposition with BCl<inf>3</inf>and NH<inf>3</inf>as the boron and nitrogen sources, respectively, and the influences of growth parameters on the film quality were investigated for samples with a thickness of about 1 µm. …

    Jpn. J. Appl. Phys. 55(5S), 05FD09, 2016-04-20


  • Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer

    Sun Zheng , Nagamatsu Kentaro , Olsson Marc , Song Peifeng , Deki Manato , Nitta Shugo , Honda Yoshio , Amano Hiroshi

    … Previously, we reported a growth method for GaN on SiC by metalorganic vapor phase epitaxy. … Compared with diodes including a high-resistance AlN interlayer, the series resistance of GaN/SiC Schottky barrier diodes incorporating the ultrathin interlayer with 5 s of TMAl treatment showed a marked reduction from 4.0 × … The ultrathin interlayer growth technique is expected to be applied in future GaN/SiC hybrid high-power and high-frequency devices. …

    Jpn. J. Appl. Phys. 55(5S), 05FB06, 2016-04-14


  • Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering

    Yamamoto Tetsuya , Tamura Akira , Usami Shigeyoshi , Mitsunari Tadashi , Nagamatsu Kentaro , Nitta Shugo , Honda Yoshio , Amano Hiroshi

    … Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. … On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. … Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. …

    Jpn. J. Appl. Phys. 55(5S), 05FD03, 2016-04-07


  • Theoretical investigations of initial growth processes on semipolar AlN[Formula: see text] surfaces under metal–organic vapor-phase epitaxy growth condition

    Akiyama Toru , Takemoto Yoshitaka , Nakamura Kohji , Ito Tomonori

    … The initial growth processes on semipolar AlN[Formula: see text] surfaces, such as adsorption behavior of Al adatoms, are investigated on the basis of ab initio calculations and kinetic Monte Carlo (MC) simulations. … By using surface phase diagrams, which are obtained by comparing the adsorption energy from ab initio calculations with gas-phase chemical potentials, we find that the adsorption of Al adatoms under H-poor condition is much easier than that under H-rich condition. …

    Jpn. J. Appl. Phys. 55(5S), 05FA06, 2016-04-07


  • Improvement of crystallinity of GaN layers grown using Ga

    Yamaguchi Yohei , Taniyama Yuuki , Takatsu Hiroaki , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    Growth methods using Ga<inf>2</inf>O vapor allow long-term growth of bulk GaN crystals. …

    Jpn. J. Appl. Phys. 55(5S), 05FB04, 2016-04-04


  • Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

    Lekhal Kaddour , Bae Si-Young , Lee Ho-Jun , Mitsunari Tadashi , Tamura Akira , Deki Manato , Honda Yoshio , Amano Hiroshi

    … In this paper, we discuss the influence of parameters such as type of carrier gas and NH<inf>3</inf>/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). … On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. …

    Jpn. J. Appl. Phys. 55(5S), 05FF03, 2016-03-31


  • Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

    Yoo Jinyeop , Shojiki Kanako , Tanikawa Tomoyuki , Kuboya Shigeyuki , Hanada Takashi , Katayama Ryuji , Matsuoka Takashi

    … We report on the polarity control of GaN regrown on pulsed-laser-deposition-grown N-polar AlN on a metalorganic-vapor-phase-epitaxy-grown Ga-polar GaN template. … The polarity of the regrown GaN, which was confirmed using aqueous KOH solutions, can be inverted from that of AlN by inserting a low-temperature GaN (LT-GaN) buffer layer. …

    Jpn. J. Appl. Phys. 55(5S), 05FA04, 2016-03-31


  • Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar [Formula: see text] p-type GaN grown by metalorganic vapor phase epitaxy

    Nonoda Ryohei , Shojiki Kanako , Tanikawa Tomoyuki , Kuboya Shigeyuki , Katayama Ryuji , Matsuoka Takashi

    … The effects of growth conditions such as Mg/Ga and V/III ratios on the properties of N-polar [Formula: see text] p-type GaN grown by metalorganic vapor phase epitaxy were studied. … Photoluminescence spectra from Mg-doped GaN depended on Mg/Ga and V/III ratios. … This is the same tendency as in group-III polar (0001) growth. …

    Jpn. J. Appl. Phys. 55(5S), 05FE01, 2016-03-30


  • Structural and optical nanoscale analysis of GaN core–shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111)

    Müller Marcus , Schmidt Gordon , Metzner Sebastian , Veit Peter , Bertram Frank , Krylyuk Sergiy , Debnath Ratan , Ha Jong-Yoon , Wen Baomei , Blanchard Paul , Motayed Abhishek , King Matthew , Davydov Albert , Christen Jürgen

    … Large arrays of GaN core–shell microrods were fabricated on Si(111) substrates applying a combined bottom-up and top-down approach which includes inductively coupled plasma (ICP) etching of patterned GaN films grown by metal–organic vapor phase epitaxy (MOVPE) and selective overgrowth of obtained GaN/Si pillars using hydride vapor phase epitaxy (HVPE). … SEM, TEM, and CL measurements reveal the formation of distinct growth domains during the HVPE overgrowth. …

    Jpn. J. Appl. Phys. 55(5S), 05FF02, 2016-03-30


  • Formation of amorphous silicon passivation films with high stability against postannealing, air exposure, and light soaking using liquid silicon

    Guo Cheng , Ohdaira Keisuke , Takagishi Hideyuki , Masuda Takashi , Shen Zhongrong , Shimoda Tatsuya

    … We applied liquid-source vapor deposition (LVD), thermal CVD from the vapor of cyclopentasilane (CPS), to form amorphous silicon (a-Si) passivation films on crystalline Si (c-Si) wafers, and investigated the thermal stability of the films against postannealing. …

    Jpn. J. Appl. Phys. 55(4S), 04ES12, 2016-03-22


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