検索結果 2089件中 1-20 を表示

  • Electrical properties of Ni/n-GaN Schottky diodes on freestanding m-plane GaN substrates

    Yamada Hisashi , Chonan Hiroshi , Takahashi Tokio , Shimizu Mitsuaki

    … The electrical properties of m-plane Ni/n-GaN Schottky diodes grown via metalorganic chemical vapor deposition were investigated. … Under growth at 1,120 °C with a V/III ratio of 1,000 (growth rate of 100 nm/min), the residual Si, O, and C impurity concentrations in the m-plane GaN layer were below the secondary-ion mass spectroscopy detection limit. …

    Appl. Phys. Express 10(4), 041001, 2017-02-28


  • Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    Yanase Shougo , Sasakura Hirotaka , Hara Shinjiro , Motohisa Junichi

    … We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. … InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. …

    Jpn. J. Appl. Phys. 56(4S), 04CP04, 2017-02-17


  • Strong impact of slight trench direction misalignment from [Formula: see text] on deep trench filling epitaxy for SiC super-junction devices

    Kosugi Ryoji , Ji Shiyang , Mochizuki Kazuhiro , Kouketsu Hidenori , Kawada Yasuyuki , Fujisawa Hiroyuki , Kojima Kazutoshi , Yonezawa Yoshiyuki , Okumura Hajime

    … A trench filling epitaxial growth technique using hot-wall chemical vapor deposition with HCl gas has been developed for SiC super-junction (SJ) device fabrication. … on a surface plane towards the [Formula: see text] direction were formed on an off-angled wafer, and the effects of trench direction misalignment from the off-direction were investigated. … Tilted growth on the mesa top reduced the filling rate at the trench bottom and caused void formation. …

    Jpn. J. Appl. Phys. 56(4S), 04CR05, 2017-02-13


  • Crystal growth mechanism of Cu

    Sugimoto Kanta , Suyama Naoki , Nakada Kazuyoshi , Yamada Akira

    … In this paper, we study the reaction mechanisms involved in the transformation from the precursor prepared with nanoparticles to the Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf>phase during solid-phase sulfurization and selenization. … During sintering, the film was first sulfurized because of the difference between the vapor pressures of S and Se. …

    Jpn. J. Appl. Phys. 56(3), 035502, 2017-02-06


  • ダイヤモンド結晶を起点とした金属性と半導体性単層カーボンナノチューブの選択成長(学内特別研究および国外研修)

    石川 豊 , Yutaka Ishikawa

    Growth of single-walled carbon nanotubes (SW CNT) using diamond crystals was attempted. … Diamond was synthesized by hot-filament chemical vapor deposition under atmospheric pressure. … CNT growth was also carried out by hot -filament chemical vapor deposition method using ethanol as a carbon source during 30 min at 600˚C under the pressure of 800Pa~900Pa. …

    日本工業大学研究報告 = Report of researches, Nippon Institute of Technology 46(4), 43-44, 2017-02


  • Fabrication and Magnetic Properties of <i>L</i>1<sub>0</sub>-MnGa Highly Oriented Thin Films

    Takahashi Y. , Makuta H. , Shima T. , Doi M.

    … <p>  <i>L</i>1<sub>0</sub>-Mn-Ga highly oriented thin films were prepared on MgO (100) single crystalline substrates with a Cr buffer layer using an ultra-high-vacuum electron beam vapor deposition system. … The RHEED pattern shows clear oriented growth. … When the thickness of <i>L</i>1<sub>0</sub>-Mn-Ga decreased from 100nm to 5nm, <i>K</i><sub>u</sub> …

    日本磁気学会論文特集号 1(1), 30-33, 2017


  • Effect of water vapor on static fatigue behavior of a nickel/yttria-stabilized zirconia composite

    MATSUDAIRA Tsuneaki , JANG Byung-Koog , KIM Sun-Dong , WOO Sang-Kuk

    … The effect of water vapor on the mechanical properties of a porous nickel/yttria-stabilized zirconia (Ni–YSZ) composite (volume ratio of Ni:YSZ = 40:60) was evaluated at 850°C, a typical operating temperature of a reversible solid oxide cell. … Both the flexural strength and static fatigue limit of Ni–YSZ obtained from the static fatigue lifetime under a wet atmosphere (containing 4% H<sub>2</sub>O) were lower than those under a dry atmosphere. …

    Journal of the Ceramic Society of Japan 125(5), 416-418, 2017


  • Inhibitory Effects of Thai Essential Oils on Potentially Aflatoxigenic <i>Aspergillus parasiticus</i> and <i><i>Aspergillus flavus</i></i>


    … (AFB<sub>1</sub>) was extracted from culture using a QuEChERS-based extraction procedure and analyzed with high performance liquid chromatography (HPLC) coupled to a fluorescence detector. … EO of pine showed the greatest inhibition of growth and AFB<sub>1</sub> … Comparison of the application of the five selected EOs in peanut pods by direct and vapor exposure indicated that the AFB<sub>1</sub> …

    Biocontrol Science 22(1), 31-40, 2017


  • 湿度可変偏光解析法でみたナフィオン<sup>®</sup>超薄膜の水分子収着

    吉本 茂 , 細見 博之 , 高井 良浩 , 伊藤 賢志

    ナフィオン<sup>®</sup>薄膜の熱膨張率および膨潤率を温湿度可変分光偏光解析法により評価し,超薄膜化によるナノスケール構造変化を考察した.70°Cにおける線膨張係数は厚さが100 nm以下で膜厚の減小とともに増大し,超薄膜化による疎水性主鎖の運動性の上昇が示唆された.一方,厚さ100 nm以下の薄膜における相対膜厚湿度依存性から評価した膨潤率は初期膜 …

    高分子論文集 74(2), 85-90, 2017


  • Thermal Treatment Effect on Morphology and Photo-Physical Properties of Bis-Styrylbenzene Derivatives

    MOCHIZUKI Hiroyuki

    … <p>Characteristics of the bis-styrylbenzene derivatives with trifluoromethyl or methyl moieties were evaluated in each as-vapor-deposited film, thermally-treated film, and the crystal from the solution. … Thermal treatment dramatically changed morphologies and photo-physical properties of the vapor-deposited film.</p> …

    IEICE Transactions on Electronics E100.C(2), 145-148, 2017


  • 湿度可変偏光解析法でみたナフィオン<sup>®</sup>超薄膜の水分子収着

    吉本 茂 , 細見 博之 , 高井 良浩 , 伊藤 賢志

    ナフィオン<sup>®</sup>薄膜の熱膨張率および膨潤率を温湿度可変分光偏光解析法により評価し,超薄膜化によるナノスケール構造変化を考察した.70°Cにおける線膨張係数は厚さが100 nm以下で膜厚の減小とともに増大し,超薄膜化による疎水性主鎖の運動性の上昇が示唆された.一方,厚さ100 nm以下の薄膜における相対膜厚湿度依存性から評価した膨潤率は初期膜 …

    高分子論文集, 2017


  • Synthesis of gallium nitride nano-wires on nickel–alumina composites from gallium oxide powder under a low partial pressure of ammonia

    KIYONO Hajime , CHINDO Masatoshi , MARUOKA Daisuke , NANKO Makoto

    … TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor–liquid–solid growth mechanism. …

    Journal of the Ceramic Society of Japan 125(1), 50-54, 2017


  • 大規模分子動力学計算による核生成の研究 : 古典的核生成理論の検証と改良 (特集 核形成再考)

    田中 今日子

    … We recently performed direct, large molecular dynamics (MD) simulations of some homogeneous nucleation processes: vaporto-liquid nucleation with (1-8)×10⁹ Lennard-Jones (LJ) atoms (or 4×10⁶ water molecules), and liquid-to-vapor nucleation with 5×10⁸ LJ atoms. … It is alsopossible to determine the formation free energy of clusters over a wide range of cluster sizes from measurements of the cluster size distribution and to test the nucleation theory from the precise comparisons. …

    日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth 44(1), 2-10, 2017


  • Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Uno Kazuyuki , Yamasaki Yuichiro , Tanaka Ichiro

    … The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. …

    Appl. Phys. Express 10(1), 015502, 2016-12-28


  • AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    Jeon Hunsoo , Jeon Injun , Lee Gang , Bae Sung , Ahn Hyung , Yang Min , Yi Sam , Yu Young , Honda Yoshio , Sawaki Nobuhiko , Kim Suck-Whan

    … High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. … The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. …

    Jpn. J. Appl. Phys. 56(1S), 01AD07, 2016-12-12


  • Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

    Fujita Shizuo , Oda Masaya , Kaneko Kentaro , Hitora Toshimi

    … They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. … Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. …

    Jpn. J. Appl. Phys. 55(12), 1202A3, 2016-11-17


  • Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy

    Lee Gang , Jeon Hunsoo , Ahn Hyung , Yang Min , Yi Sam , Yu Young , Lee Sang , Honda Yoshio , Sawaki Nobuhiko , Kim Suck-Whan

    … We developed a vertical-type light-emitting diode (LED) in which the substrate is removed using a hydride vapor phase epitaxy (HVPE) apparatus consisting of a multi-graphite boat filled with a mixed source and a high-temperature (T ≈ … The new chip-growth process with a significant reduction in the number of production steps is completed in only four steps, namely, photolithography, epitaxial layer growth, sorting, and metallization. …

    Jpn. J. Appl. Phys. 56(1S), 01AD03, 2016-11-04


  • Growth of rocksalt-structured Mg

    Kaneko Kentaro , Onuma Takeyoshi , Tsumura Keiichi , Uchida Takayuki , Jinno Riena , Yamaguchi Tomohiro , Honda Tohru , Fujita Shizuo

    … 0.5) alloy films were grown on MgO substrates using the mist chemical vapor deposition method. … The bandgap was tuned from 5.9 to 7.8 eV as x varied from 0.5 to 1. … Deep ultraviolet cathodoluminescence, stemming from near band edge transitions, was observed for Mg<inf>0.57</inf>Zn<inf>0.43</inf>O in the 4.8–5.5 eV range, peaking at ∼5.1 eV (∼240 nm) in the 12–100 K range. …

    Appl. Phys. Express 9(11), 111102, 2016-10-18


  • シリコンウィスカ単電極モジュールを用いたマウス大脳皮質ニューロン計測

    澤畑 博人 , 山際 翔太 , 沼野 利佳 , 石田 誠 , 鯉田 孝和 , 河野 剛士

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編] 33, 1-4, 2016-10-02

  • Novel integration method for III–V semiconductor devices on silicon platform

    Matsumoto Keiichi , Kishikawa Junya , Nishiyama Tetsuo , Onuki Yuya , Shimomura Kazuhiko

    … Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. … After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. … Furthermore, almost no lattice strain was observed from the InP layer. …

    Jpn. J. Appl. Phys. 55(11), 112201, 2016-09-29