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  • Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Uno Kazuyuki , Yamasaki Yuichiro , Tanaka Ichiro

    … The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. …

    Appl. Phys. Express 10(1), 015502, 2016-12-28

    応用物理学会

  • AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    Jeon Hunsoo , Jeon Injun , Lee Gang , Bae Sung , Ahn Hyung , Yang Min , Yi Sam , Yu Young , Honda Yoshio , Sawaki Nobuhiko , Kim Suck-Whan

    … High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. … The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. …

    Jpn. J. Appl. Phys. 56(1S), 01AD07, 2016-12-12

    応用物理学会

  • Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

    Fujita Shizuo , Oda Masaya , Kaneko Kentaro , Hitora Toshimi

    … They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. … Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. …

    Jpn. J. Appl. Phys. 55(12), 1202A3, 2016-11-17

    応用物理学会

  • Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy

    Lee Gang , Jeon Hunsoo , Ahn Hyung , Yang Min , Yi Sam , Yu Young , Lee Sang , Honda Yoshio , Sawaki Nobuhiko , Kim Suck-Whan

    … We developed a vertical-type light-emitting diode (LED) in which the substrate is removed using a hydride vapor phase epitaxy (HVPE) apparatus consisting of a multi-graphite boat filled with a mixed source and a high-temperature (T ≈ … The new chip-growth process with a significant reduction in the number of production steps is completed in only four steps, namely, photolithography, epitaxial layer growth, sorting, and metallization. …

    Jpn. J. Appl. Phys. 56(1S), 01AD03, 2016-11-04

    応用物理学会

  • Growth of rocksalt-structured Mg

    Kaneko Kentaro , Onuma Takeyoshi , Tsumura Keiichi , Uchida Takayuki , Jinno Riena , Yamaguchi Tomohiro , Honda Tohru , Fujita Shizuo

    … 0.5) alloy films were grown on MgO substrates using the mist chemical vapor deposition method. … The bandgap was tuned from 5.9 to 7.8 eV as x varied from 0.5 to 1. … Deep ultraviolet cathodoluminescence, stemming from near band edge transitions, was observed for Mg<inf>0.57</inf>Zn<inf>0.43</inf>O in the 4.8–5.5 eV range, peaking at ∼5.1 eV (∼240 nm) in the 12–100 K range. …

    Appl. Phys. Express 9(11), 111102, 2016-10-18

    応用物理学会

  • Novel integration method for III–V semiconductor devices on silicon platform

    Matsumoto Keiichi , Kishikawa Junya , Nishiyama Tetsuo , Onuki Yuya , Shimomura Kazuhiko

    … Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. … After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. … Furthermore, almost no lattice strain was observed from the InP layer. …

    Jpn. J. Appl. Phys. 55(11), 112201, 2016-09-29

    応用物理学会

  • Solution-based mist CVD technique for CH

    Nishinaka Hiroyuki , Yoshimoto Masahiro

    … We report the growth of inorganic–organic perovskites using a solution-based mist chemical vapor deposition (mist CVD) technique and the successful growth of the alloying CH<inf>3</inf>NH<inf>3</inf>Pb(Br<inf>1−</inf><inf>x</inf>Cl<inf>x</inf>)<inf>3</inf>using mixture solutions of Br and Cl precursors. …

    Jpn. J. Appl. Phys. 55(10), 100308, 2016-09-23

    応用物理学会

  • Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

    Rajesh Mohan , Nishioka Masao , Arakawa Yasuhiko

    … We report the first demonstration of electroluminescence at 1.3 µm from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). … The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. …

    Jpn. J. Appl. Phys. 55(10), 100304, 2016-09-15

    応用物理学会

  • CVD合成ダイヤモンド結晶を起点とした単層カーボンナノチューブの成長

    石川 豊 , 長谷川 光斗

    表面技術 = Journal of the Surface Finishing Society of Japan 67(7), 380-382, 2016-07

  • Thin film deposition at atmospheric pressure using dielectric barrier discharges: Advances on three-dimensional porous substrates and functional coatings

    Fanelli Fiorenza , Bosso Piera , Mastrangelo Anna , Fracassi Francesco

    … Surface processing of materials by atmospheric pressure dielectric barrier discharges (DBDs) has experienced significant growth in recent years. … Considerable research efforts have been directed for instance to develop a large variety of processes which exploit different DBD electrode geometries for the direct and remote deposition of thin films from precursors in gas, vapor and aerosol form. …

    Jpn. J. Appl. Phys. 55(7S2), 07LA01, 2016-06-15

    応用物理学会

  • Preparation of hydrogenated diamond-like carbon films using high-density pulsed plasmas of Ar/C

    Kimura Takashi , Kamata Hikaru

    … Hydrogenated diamond-like carbon films are prepared using reactive high-density pulsed plasmas of Ar/C<inf>2</inf>H<inf>2</inf>and Ne/C<inf>2</inf>H<inf>2</inf>mixture in the total pressure range from 0.5 to 2 Pa. …

    Jpn. J. Appl. Phys. 55(7S2), 07LE02, 2016-06-10

    応用物理学会

  • Growth and optical properties of Nb-doped WS

    Sasaki Shogo , Kobayashi Yu , Liu Zheng , Suenaga Kazutomo , Maniwa Yutaka , Miyauchi Yuhei , Miyata Yasumitsu

    … We report the chemical vapor deposition growth of Nb-doped WS<inf>2</inf>monolayers and their characterization. … These results indicate that the observed PL peaks are assignable to the emission from impurity states generated by the substitution of Nb. …

    Appl. Phys. Express 9(7), 071201, 2016-06-02

    応用物理学会

  • Metal–organic chemical vapor deposition growth of β-FeSi

    Akiyama Kensuke , Motoizumi Yuu , Funakubo Hiroshi , Irie Hiroshi , Matsumoto Yoshihisa

    … Semiconducting iron disilicide (β-FeSi<inf>2</inf>) island grains of a few hundred nanometers in diameter were formed on the surface of Si powder by metal–organic chemical vapor deposition. … The dramatic decrease in the defect density in β-FeSi<inf>2</inf>, which was due to this growth mechanism, was confirmed by the photoluminescence properties. …

    Jpn. J. Appl. Phys. 55(6S2), 06HC02, 2016-05-20

    応用物理学会

  • Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

    Zhu W. , Mitchell B. , Timmerman D. , Uedono A. , Koizumi A. , Fujiwara Y.

    … The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. … By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. …

    APL Materials 4(5), 056103, 2016-05

    機関リポジトリ DOI

  • Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

    Lin Chia-Hung , Yasui Daiki , Tamaki Shinya , Miyake Hideto , Hiramatsu Kazumasa

    … Single-crystal a-plane AlN[Formula: see text] films were grown on r-plane sapphire [Formula: see text] substrates by hydride vapor phase epitaxy (HVPE). … The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the NH<inf>3</inf>preflow time. …

    Jpn. J. Appl. Phys. 55(5S), 05FA12, 2016-04-21

    応用物理学会

  • Influences of growth parameters on the film formation of hexagonal boron nitride thin films grown on sapphire substrates by low-pressure chemical vapor deposition

    Umehara Naoki , Masuda Atsushi , Shimizu Takaki , Kuwahara Iori , Kouno Tetsuya , Kominami Hiroko , Hara Kazuhiko

    … Hexagonal boron nitride (h-BN) films were grown on c-plane sapphire substrates by low-pressure chemical vapor deposition with BCl<inf>3</inf>and NH<inf>3</inf>as the boron and nitrogen sources, respectively, and the influences of growth parameters on the film quality were investigated for samples with a thickness of about 1 µm. …

    Jpn. J. Appl. Phys. 55(5S), 05FD09, 2016-04-20

    応用物理学会

  • Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer

    Sun Zheng , Nagamatsu Kentaro , Olsson Marc , Song Peifeng , Deki Manato , Nitta Shugo , Honda Yoshio , Amano Hiroshi

    … Previously, we reported a growth method for GaN on SiC by metalorganic vapor phase epitaxy. … Compared with diodes including a high-resistance AlN interlayer, the series resistance of GaN/SiC Schottky barrier diodes incorporating the ultrathin interlayer with 5 s of TMAl treatment showed a marked reduction from 4.0 × … The ultrathin interlayer growth technique is expected to be applied in future GaN/SiC hybrid high-power and high-frequency devices. …

    Jpn. J. Appl. Phys. 55(5S), 05FB06, 2016-04-14

    応用物理学会

  • Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering

    Yamamoto Tetsuya , Tamura Akira , Usami Shigeyoshi , Mitsunari Tadashi , Nagamatsu Kentaro , Nitta Shugo , Honda Yoshio , Amano Hiroshi

    … Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. … On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. … Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. …

    Jpn. J. Appl. Phys. 55(5S), 05FD03, 2016-04-07

    応用物理学会

  • Theoretical investigations of initial growth processes on semipolar AlN[Formula: see text] surfaces under metal–organic vapor-phase epitaxy growth condition

    Akiyama Toru , Takemoto Yoshitaka , Nakamura Kohji , Ito Tomonori

    … The initial growth processes on semipolar AlN[Formula: see text] surfaces, such as adsorption behavior of Al adatoms, are investigated on the basis of ab initio calculations and kinetic Monte Carlo (MC) simulations. … By using surface phase diagrams, which are obtained by comparing the adsorption energy from ab initio calculations with gas-phase chemical potentials, we find that the adsorption of Al adatoms under H-poor condition is much easier than that under H-rich condition. …

    Jpn. J. Appl. Phys. 55(5S), 05FA06, 2016-04-07

    応用物理学会

  • Improvement of crystallinity of GaN layers grown using Ga

    Yamaguchi Yohei , Taniyama Yuuki , Takatsu Hiroaki , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    Growth methods using Ga<inf>2</inf>O vapor allow long-term growth of bulk GaN crystals. …

    Jpn. J. Appl. Phys. 55(5S), 05FB04, 2016-04-04

    応用物理学会

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