検索結果 2114件中 1-20 を表示

  • Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

    Fujikura Hajime , Konno Taichiro , Yoshida Takehiro , Horikiri Fumimasa

    … Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. … Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. … These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures. …

    Jpn. J. Appl. Phys. 56(8), 085503, 2017-07-21

    応用物理学会

  • Scanning tunneling microscopy/spectroscopy on MoS

    Mogi Hiroyuki , Kobayashi Yu , Taninaka Atsushi , Sakurada Ryuji , Takeuchi Takahiro , Yoshida Shoji , Takeuchi Osamu , Miyata Yasumitsu , Shigekawa Hidemi

    … MoS<inf>2</inf>embedded nanowires formed in a transition-metal dichalcogenide (TMDC) layered semiconductor of Mo<inf>1−</inf><inf>x</inf>W<inf>x</inf>S<inf>2</inf>alloy grown by chemical vapor deposition (CVD) on graphite were observed for the first time. …

    Jpn. J. Appl. Phys. 56(8S1), 08LB06, 2017-07-19

    応用物理学会

  • Growth of high-quality In

    Huynh Sa , Ha Minh , Do Huy , Nguyen Tuan , Yu Hung , Luc Quang , Chang Edward

    … The growth of high-quality In<inf>0.28</inf>Ga<inf>0.72</inf>Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. …

    Appl. Phys. Express 10(7), 075505, 2017-06-23

    応用物理学会

  • Stoichiometric control for heteroepitaxial growth of smooth ε-Ga

    Tahara Daisuke , Nishinaka Hiroyuki , Morimoto Shota , Yoshimoto Masahiro

    … Epitaxial ε-Ga<inf>2</inf>O<inf>3</inf>thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. … Cathodoluminescence measurements showed a deep-level emission ranging from 1.55–3.7 eV; …

    Jpn. J. Appl. Phys. 56(7), 078004, 2017-06-22

    応用物理学会

  • Synthesis of copper particles covered with cobalt-catalyzed carbon nanofibers and their application to air-curable conductive paste

    Ohnishi Shigekatsu , Nakasuga Akira , Nakagawa Kiyoharu

    … Cobalt nanoprecipitates (CoNPs) used as the catalyst for carbon fiber growth were arranged on the surface of an alloy particle by heat treatment. … CNFs were grown from the CoNPs on the alloy particle via thermal chemical vapor deposition (CVD). …

    Jpn. J. Appl. Phys. 56(7S2), 07KD03, 2017-06-22

    応用物理学会

  • Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

    Hoshi Takuya , Kashio Norihide , Sugiyama Hiroki , Yokoyama Haruki , Kurishima Kenji , Ida Minoru , Matsuzaki Hideaki

    … We report on a method for composition and doping control for metalorganic chemical vapor deposition of a double heterojunction bipolar transistor (DHBT) with a hybrid base structure consisting of a compositionally graded InGaAsSb for boosting an average electron velocity and a heavily doped thin GaAsSb for lowering the base contact resistivity. … The GaAsSb contact layer can be formed by simply turning off the supply of In precursor tetramethylindium (TMIn) after the growth of the composition and doping graded InGaAsSb base. …

    Jpn. J. Appl. Phys. 56(7), 075503, 2017-06-19

    応用物理学会

  • Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C

    Takai Shinnosuke , Lu Yi , Oda Osamu , Takeda Keigo , Kondo Hiroki , Ishikawa Kenji , Sekine Makoto , Hori Masaru

    … The InN films were deposited on GaN surfaces at a low temperature of 200 °C by radical-enhanced metal organic chemical vapor deposition (REMOCVD). … The REMOCVD system can provide N radicals from the plasma of a N<inf>2</inf>–H<inf>2</inf>mixture gas without using ammonia. … The growth mode was modeled as a step flow on the basis of surface morphology observation by atomic force microscopy. …

    Jpn. J. Appl. Phys. 56(6S2), 06HE08, 2017-05-26

    応用物理学会

  • Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Lu Yimin , Makihara Katsunori , Takeuchi Daichi , Ikeda Mitsuhisa , Ohta Akio , Miyazaki Seiichi

    … Hydrogenated microcrystalline (µc) Si/Ge heterostructures were prepared on quartz substrates by plasma-enhanced chemical vapor deposition (CVD) from VHF inductively coupled plasma of SiH<inf>4</inf>just after GeH<inf>4</inf>employing Ni nanodots (NDs) as seeds for crystalline nucleation. … The crystallinity of the films and the progress of grain growth were characterized by Raman scattering spectroscopy and atomic force microscopy (AFM), respectively. …

    Jpn. J. Appl. Phys. 56(6S1), 06GG07, 2017-05-10

    応用物理学会

  • Shape consistency of MoS

    Wang Lei , Chen Fei , Ji Xiaohong

    … In this study, MoS<inf>2</inf>flakes with the configuration of multilayer MoS<inf>2</inf>stacked on monolayer MoS<inf>2</inf>were synthesized by chemical vapor deposition (CVD). … The morphology of the MoS<inf>2</inf>flakes transformed from that of a truncated triangle to that of a fishbone-like shape with increasing growth temperature. …

    Appl. Phys. Express 10(6), 065201, 2017-05-10

    応用物理学会

  • Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels

    Shima Kohei , Sato Noboru , Funato Yuichi , Fukushima Yasuyuki , Momose Takeshi , Shimogaki Yukihiro

    … The effect of multiple film-forming species on the film quality during chemical vapor deposition (CVD) of SiC from CH<inf>3</inf>SiCl<inf>3</inf>/H<inf>2</inf>was examined by separating each species using high aspect-ratio (AR) parallel-plate microchannels. … The exceptionally high AR, which was typically more than [Formula: see text], allowed film growth with a variety of film-forming species that significantly changed with depth. …

    Jpn. J. Appl. Phys. 56(6S2), 06HE02, 2017-04-28

    応用物理学会

  • Nucleation site in CVD graphene growth investigated by radiation-mode optical microscopy

    Taira Takanobu , Obata Seiji , Saiki Koichiro

    … We investigate the graphene nucleation site in real space using radiation-mode optical microscopy (Rad-OM), which we have developed for the real-time observation of the graphene growth in chemical vapor deposition (CVD) conditions. … We found the bright spot in the Rad-OM image worked as a nucleation site through continuous observation of a Cu substrate from pretreatment to graphene growth. …

    Appl. Phys. Express 10(5), 055502, 2017-04-05

    応用物理学会

  • Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance

    Ren Bing , Liao Meiyong , Sumiya Masatomo , Wang Linjun , Koide Yasuo , Sang Liwen

    … Vertical Schottky barrier diodes (SBDs) were fabricated from the metal–organic chemical vapor deposition (MOCVD)-grown GaN epitaxial layer on free-standing GaN substrates. … It was found that the quality of GaN drift layers and SBD properties were strongly dependent on the growth rates. … 1.04), and high Schottky barrier height (∼0.97 eV) were achieved at a relatively low growth rate of 2.61 µm/h. …

    Appl. Phys. Express 10(5), 051001, 2017-03-31

    応用物理学会

  • Electrical properties of Ni/n-GaN Schottky diodes on freestanding m-plane GaN substrates

    Yamada Hisashi , Chonan Hiroshi , Takahashi Tokio , Shimizu Mitsuaki

    … The electrical properties of m-plane Ni/n-GaN Schottky diodes grown via metalorganic chemical vapor deposition were investigated. … Under growth at 1,120 °C with a V/III ratio of 1,000 (growth rate of 100 nm/min), the residual Si, O, and C impurity concentrations in the m-plane GaN layer were below the secondary-ion mass spectroscopy detection limit. …

    Appl. Phys. Express 10(4), 041001, 2017-02-28

    応用物理学会

  • Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    Yanase Shougo , Sasakura Hirotaka , Hara Shinjiro , Motohisa Junichi

    … We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. … InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. …

    Jpn. J. Appl. Phys. 56(4S), 04CP04, 2017-02-17

    応用物理学会

  • Strong impact of slight trench direction misalignment from [Formula: see text] on deep trench filling epitaxy for SiC super-junction devices

    Kosugi Ryoji , Ji Shiyang , Mochizuki Kazuhiro , Kouketsu Hidenori , Kawada Yasuyuki , Fujisawa Hiroyuki , Kojima Kazutoshi , Yonezawa Yoshiyuki , Okumura Hajime

    … A trench filling epitaxial growth technique using hot-wall chemical vapor deposition with HCl gas has been developed for SiC super-junction (SJ) device fabrication. … on a surface plane towards the [Formula: see text] direction were formed on an off-angled wafer, and the effects of trench direction misalignment from the off-direction were investigated. … Tilted growth on the mesa top reduced the filling rate at the trench bottom and caused void formation. …

    Jpn. J. Appl. Phys. 56(4S), 04CR05, 2017-02-13

    応用物理学会

  • Crystal growth mechanism of Cu

    Sugimoto Kanta , Suyama Naoki , Nakada Kazuyoshi , Yamada Akira

    … In this paper, we study the reaction mechanisms involved in the transformation from the precursor prepared with nanoparticles to the Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf>phase during solid-phase sulfurization and selenization. … During sintering, the film was first sulfurized because of the difference between the vapor pressures of S and Se. …

    Jpn. J. Appl. Phys. 56(3), 035502, 2017-02-06

    応用物理学会

  • ダイヤモンド結晶を起点とした金属性と半導体性単層カーボンナノチューブの選択成長(学内特別研究および国外研修)

    石川 豊 , Yutaka Ishikawa

    Growth of single-walled carbon nanotubes (SW CNT) using diamond crystals was attempted. … Diamond was synthesized by hot-filament chemical vapor deposition under atmospheric pressure. … CNT growth was also carried out by hot -filament chemical vapor deposition method using ethanol as a carbon source during 30 min at 600˚C under the pressure of 800Pa~900Pa. …

    日本工業大学研究報告 = Report of researches, Nippon Institute of Technology 46(4), 43-44, 2017-02

    機関リポジトリ

  • イオン液体を溶媒に用いたTEMによる核生成過程の"その場"観察実験

    木村 勇気

    … <p>  We believe that elucidation of the role of hydrated layer on the surface of crystals and growth units, and incorporation of significances of nanoscale materials are the keys to understand nucleation processes. … Here, we report results of nucleation of sodium chlorate as an example from an ionic liquid instead of water as a solvent. …

    日本結晶成長学会誌 44(1), 11-16, 2017

    DOI

  • 大規模分子動力学計算による核生成の研究

    田中 今日子

    … We recently performed direct, large molecular dynamics (MD) simulations of some homogeneous nucleation processes: vaporto-liquid nucleation with (1-8)×10⁹ Lennard-Jones (LJ) atoms (or 4×10⁶ water molecules), and liquid-to-vapor nucleation with 5×10⁸ LJ atoms. … It is alsopossible to determine the formation free energy of clusters over a wide range of cluster sizes from measurements of the cluster size distribution and to test the nucleation theory from the precise comparisons. …

    日本結晶成長学会誌 44(1), 2-10, 2017

    機関リポジトリ DOI

  • SiC 結晶成長における数値解析の最近の発展

    柿本 浩一 , 中野 智

    …  The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. … The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. …

    Journal of the Vacuum Society of Japan 60(8), 313-320, 2017

    DOI

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