Search Results:  1-20 of 1914

  • 1

    P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

    Yokoyama Haruki , Hoshi Takuya

    … The electrical characteristics of Si-doped GaAsSb layers grown at various growth temperatures from 530 to 630 °C by metalorganic chemical vapor deposition (MOCVD), are investigated. …

    Jpn. J. Appl. Phys. 54(1), 015506, 2014-12-22


  • 2

    First-principles simulation of the chemical reactions in GaN growth from Ga

    Yamamoto Masahiro , Hamada Noriaki

    … The intrinsic reaction coordinates (IRC) have been searched for and the reaction path from Ga<inf>2</inf>O, which is a raw material of GaN, has been clarified. … There is no residual solid product in the vapor process apart from GaN and the deposition on the chamber wall can be reduced. … Thus, long-time continuous crystal growth can be executed. …

    Jpn. J. Appl. Phys. 53(11), 115601, 2014-10-08


  • 3

    Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition

    Chao Chung-Hua , Wei Da-Hua

    … Non-polar coexisting m-plane ([Formula: see text]) and a-plane ([Formula: see text]) zinc oxide (ZnO) thin films have been synthesized onto commercial silicon (100) substrates by using plasma enhanced chemical vapor deposition (PECVD) system at different working pressures. … From the X-ray diffraction patterns, the non-polar ZnO thin films were successfully synthesized at the working pressures of 6 and 9 Torr, respectively. …

    Jpn. J. Appl. Phys. 53(11S), 11RA05, 2014-10-01


  • 4

    High nitrogen pressure solution growth of GaN

    Bockowski Michal

    … Results of GaN growth from gallium solution under high nitrogen pressure are presented. … Basic of the high nitrogen pressure solution (HNPS) growth method is described. … A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. …

    Jpn. J. Appl. Phys. 53(10), 100203, 2014-09-08


  • 5

    Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

    Aisaka Takashi , Tanikawa Tomoyuki , Kimura Takeshi , Shojiki Kanako , Hanada Takashi , Katayama Ryuji , Matsuoka Takashi

    … Indium was introduced as a surfactant during metalorganic vapor phase epitaxial growth of nitrogen-polar GaN on c-plane sapphire tilted from 0.2 to 1.0° … For each sample with different tilted angle, the surfactant effect was confirmed from a scanning electron microscope and an atomic force microscope observations. … Therefore, it was confirmed that indium introduced during the nitrogen-polar GaN growth surely plays a role as a surfactant. …

    Jpn. J. Appl. Phys. 53(8), 085501, 2014-07-09


  • 6

    Growth of uniform carbon thin film containing nanocrystalline graphene clusters from evaporated palm oil by thermal chemical vapor deposition

    Rahman Shaharin , Mahmood Mohamad , Hashim Abdul

    Jpn. J. Appl. Phys. 53(7), 075101, 2014-06-13


  • 7

    Molecular dynamics simulations of the nucleation of water: Determining the sticking probability and formation energy of a cluster

    Tanaka Kyoko K. , Kawano Akio , Tanaka Hidekazu

    … We performed molecular dynamics simulations of the nucleation of water vapor in order to test nucleation theories. … We obtained the nucleation rates and the formation free energies of a subcritical cluster from the cluster size distribution. …

    Journal of Chemical Physics 140(11), 114302, 2014-03-21

    IR CrossRef

  • 8

    29pAP-2 Growth kinetics of elementary steps of ice crystals grown from water vapor  [in Japanese]

    Asakawa Harutoshi , Sazaki Gen , Yokoyama Etsuro , Nagashima Ken , Nakatsubo Shunichi , Furukawa Yoshinori

    Meeting abstracts of the Physical Society of Japan 69(1-4), 897, 2014-03-05

    CiNii Fulltext PDF - Paid 

  • 9

    Developments of Self-alignment Process for Few Layers of Graphene with Low Gas Pressure and Short Deposition Time

    河原 敏男||カワハラ トシオ||Kawahara Toshio , 玉田 敦子||タマダ アツコ||Tamada Atsuko

    … Depending on the growth condition, the grapho-epitaxy can enhance the graphene layers growth. … In this paper, we have deposited carbon materials by chemical vapor deposition with low gas pressure and short deposition time for the search of graphene growth. … From Raman spectra, moderate range of growth condition is better for the nano carbon growth. …

    総合工学 26, 30, 2014-03


  • 10

    Luminescence property of hexagonal boron nitride films grown by high-temperature CVD  [in Japanese]

    UMEHARA Naoki , KUWAHARA Iori , LEE Hey-Young , KOUNO Tetsuya , KOMINAMI Hiroko , NAKANISHI Yoichiro , HARA Kazuhiko

    BCl_3とNH_3を原料とする常圧の化学気相法を用いて,c面サファイア基板上に六方晶窒化ホウ素(h-BN)薄膜の作製を行った.成長温度は1300〜1700℃であり,同じ温度でNH_3による基板表面の窒化を行った後に成長を開始した.X線回折の成長温度依存性から,成長温度の上昇に伴い結晶化が促進され,1500℃でc軸に強く配向した薄膜が得られた,しかしさらに高い温度では,過度の基板窒化による結晶性の …

    IEICE technical report. Electronic information displays 113(408), 25-28, 2014-01-17

    CiNii Fulltext PDF - Limited 

  • 11

    Evapotranspiration Model Analysis of Crop Water Use in Plant Factory System

    PAMUNGKAS Agung Putra , HATOU Kenji , MORIMOTO Tetsuo

    … The model requires some climatic data (e.g., solar radiation, air temperature, relative humidity, and wind speed) and plant growth parameters (leaf area index) as inputs. … In this study, the observed data were obtained from an experimental greenhouse located at the Ehime University, Japan. … The results showed that solar radiation and vapor pressure deficit are important factors driving the <I>ET</I> …

    Environmental Control in Biology 52(3), 183-188, 2014

    J-STAGE CrossRef

  • 12

    Crystallographic and Electric Properties of Multilayer Graphene Grown by Photoemission Assisted-Plasma Enhanced CVD: H2 versus Ar for career gas

    OJIRO Yoshihiro , OGAWA Shuichi , SATOU Motonobu , NIHEI Mizuhisa , TAKAKUWA Yuji

    … Networked nanographite (NNG) was grown by using photoemission-assisted plasma enhanced chemical vapor deposition (CVD) on SiO2 (90 nm) /Si substrates and the career gas dependence of electric resistivity, chemical configuration, and grain size was investigated from Raman spectroscopy, SIMS, and four probes method. … NNG with the thickness from 2∼60 nm was grown by changing the growth period. …

    Hyomen Kagaku 35(8), 420-425, 2014

    J-STAGE CrossRef

  • 13

    Numerical simulation on the heat transfer characteristics during the bubble growth considering microlayer evaporation in nucleate boiling  [in Japanese]

    CHEN Zhihao , TAGUCHI Takeshi , UTAKA Yoshio

    … The initial microlayer thickness was found to increase linearly with distance from the bubble inception site. … Although a large amount of heat transport results from the evaporation of microlayer during the growth process of bubble, the quantitative degree of contribution of microlayer evaporation was not elucidated. …

    Transactions of the JSME (in Japanese) 80(812), TEP0097-TEP0097, 2014

    J-STAGE CrossRef

  • 14

    Improvement of mode-Ⅱ interface mechanical properties of Al/GFRP composite laminates by VGCF  [in Japanese]

    AZUMA Takeru , NING Huiming , WATANABE Tomonori , HU Ning

    … In this work, interlaminar mechanical properties, e.g., fracture toughness, of GLARE are improved by acid treatment to Al and adding Vapor Grown Carbon Fiber (VGCF) between Al and GFRP layers. … From the results of ENF tests for Mode-Ⅱ properties, when 10g/m2 of VGCF are added between Al with acid treatment and GFRP layers in GLARE, critical load (PC) and critical strain energy release rate in Mode-Ⅱ(GⅡC) increase most significantly due to the fiber bridging effect, i.e., 118% and 345%, respectively. …

    Transactions of the JSME (in Japanese) 80(810), SMM0021-SMM0021, 2014

    J-STAGE CrossRef

  • 15

    A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy

    Lee Moonsang , Mikulik Dmitry , Kim Joosung , Tak Youngjo , Kim Junyoun , Shim Munbo , Park Youngsoo , Chung Uin , Yoon Euijoon , Park Sungsoo

    … diameter and 400 μm thickness grown from Si substrate by hydride vapor phase epitaxy. …

    Applied Physics Express 6(12), 125502-125502-4, 2013-12-25


  • 16

    Control of Magnetic Properties of Carbon Nanotubes Filled with Iron

    Sato Hideki , Nagata Atsushi , Kubonaka Nobuo , Fujiwara Yuji

    … Carbon nanotubes (CNTs) filled with iron nanowires show high coercivity owing to their shape anisotropy originating from the high-aspect-ratio shapes of the iron nanowires. … In this study, CNTs filled with iron were prepared by the thermal chemical vapor deposition (T-CVD) method using ferrocene as a precursor, and the magnetic properties of the synthesized CNTs were examined in detail. …

    Jpn J Appl Phys 52(11), 11NL03-11NL03-6, 2013-11-25


  • 17

    Optimization of In

    Tan Ming , Lu Shulong , Ji Lian , Zhu Yaqi , Chen Zhiming

    … An In<inf>0.68</inf>Ga<inf>0.32</inf>As thermophotovoltaic (TPV) cell on a compositionally nonmonotonically graded InAsP buffer with a band gap energy of 0.60 eV grown by metal--organic chemical vapor deposition (MOCVD) has been fabricated. … The performance of the TPV device was greatly improved with optimized material growth, the use of an absorption layer of suitable width, and appropriate TiO<inf>2</inf>/SiO<inf>2</inf>antireflective coating design. …

    Jpn J Appl Phys 52(11), 116504-116504-3, 2013-11-25


  • 18

    Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy

    Bryant Benjamin N. , Young Erin C. , Wu Feng , Fujito Kenji , Nakamura Shuji , Speck James S.

    … In this study we demonstrate a direct correlation between carrier gas and the generation of basal plane stacking faults (BPSF) in m-plane GaN during hydride vapor phase epitaxy (HVPE) regrowth. … In this work, high-quality m-plane free-standing substrates were regrown by HVPE under a wide range of growth conditions and carrier gases. …

    Applied Physics Express 6(11), 115502-115502-4, 2013-11-25


  • 19

    Fabrication of titanium oxide using plasma excited atomic layer deposition  [in Japanese]

    Kanomata Kensaku , ohba Hisashi , Momiyama Katsuaki , Suzuki Takahiko , Ahmmad Bashil , Kubota Shigeru , Hirahara Kazuhiro , Hirose Fumihiko

    我々はtetrakis(dimethylamino)titanium(TDMAT)とプラズマ励起水蒸気を用いたチタン酸化膜の室温原子層堆積法を開発した。プラズマ励起水蒸気は酸化チタン表面に吸着したTDMATを効果的に酸化すると同時にTDMATの吸着サイトとなるOH基を室温で成長表面上に形成する。本方法では、チタン酸化膜の成長速度は室温において0.157nm/cycleと測定された。またチタン酸化膜 …

    IEICE technical report. Component parts and materials 113(268), 45-48, 2013-10-17

    CiNii Fulltext PDF - Limited 

  • 20

    Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy

    Akasaka Tetsuya , Kobayashi Yasuyuki , Kasu Makoto [他]

    Applied physics express : APEX 6(10), 105501-1-4, 2013-10