Search Results 1-20 of 2027

  • Improvement of crystallinity of GaN layers grown using Ga

    Yamaguchi Yohei , Taniyama Yuuki , Takatsu Hiroaki , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    Growth methods using Ga<inf>2</inf>O vapor allow long-term growth of bulk GaN crystals. …

    Jpn. J. Appl. Phys. 55(5S), 05FB04, 2016-04-04

    JSAP

  • Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

    Lekhal Kaddour , Bae Si-Young , Lee Ho-Jun , Mitsunari Tadashi , Tamura Akira , Deki Manato , Honda Yoshio , Amano Hiroshi

    … In this paper, we discuss the influence of parameters such as type of carrier gas and NH<inf>3</inf>/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). … On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. …

    Jpn. J. Appl. Phys. 55(5S), 05FF03, 2016-03-31

    JSAP

  • Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

    Yoo Jinyeop , Shojiki Kanako , Tanikawa Tomoyuki , Kuboya Shigeyuki , Hanada Takashi , Katayama Ryuji , Matsuoka Takashi

    … We report on the polarity control of GaN regrown on pulsed-laser-deposition-grown N-polar AlN on a metalorganic-vapor-phase-epitaxy-grown Ga-polar GaN template. … The polarity of the regrown GaN, which was confirmed using aqueous KOH solutions, can be inverted from that of AlN by inserting a low-temperature GaN (LT-GaN) buffer layer. …

    Jpn. J. Appl. Phys. 55(5S), 05FA04, 2016-03-31

    JSAP

  • Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar [Formula: see text] p-type GaN grown by metalorganic vapor phase epitaxy

    Nonoda Ryohei , Shojiki Kanako , Tanikawa Tomoyuki , Kuboya Shigeyuki , Katayama Ryuji , Matsuoka Takashi

    … The effects of growth conditions such as Mg/Ga and V/III ratios on the properties of N-polar [Formula: see text] p-type GaN grown by metalorganic vapor phase epitaxy were studied. … Photoluminescence spectra from Mg-doped GaN depended on Mg/Ga and V/III ratios. … This is the same tendency as in group-III polar (0001) growth. …

    Jpn. J. Appl. Phys. 55(5S), 05FE01, 2016-03-30

    JSAP

  • Structural and optical nanoscale analysis of GaN core–shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111)

    Müller Marcus , Schmidt Gordon , Metzner Sebastian , Veit Peter , Bertram Frank , Krylyuk Sergiy , Debnath Ratan , Ha Jong-Yoon , Wen Baomei , Blanchard Paul , Motayed Abhishek , King Matthew , Davydov Albert , Christen Jürgen

    … Large arrays of GaN core–shell microrods were fabricated on Si(111) substrates applying a combined bottom-up and top-down approach which includes inductively coupled plasma (ICP) etching of patterned GaN films grown by metal–organic vapor phase epitaxy (MOVPE) and selective overgrowth of obtained GaN/Si pillars using hydride vapor phase epitaxy (HVPE). … SEM, TEM, and CL measurements reveal the formation of distinct growth domains during the HVPE overgrowth. …

    Jpn. J. Appl. Phys. 55(5S), 05FF02, 2016-03-30

    JSAP

  • Formation of amorphous silicon passivation films with high stability against postannealing, air exposure, and light soaking using liquid silicon

    Guo Cheng , Ohdaira Keisuke , Takagishi Hideyuki , Masuda Takashi , Shen Zhongrong , Shimoda Tatsuya

    … We applied liquid-source vapor deposition (LVD), thermal CVD from the vapor of cyclopentasilane (CPS), to form amorphous silicon (a-Si) passivation films on crystalline Si (c-Si) wafers, and investigated the thermal stability of the films against postannealing. …

    Jpn. J. Appl. Phys. 55(4S), 04ES12, 2016-03-22

    JSAP

  • Crystallinity improvements of Ge waveguides fabricated by epitaxial lateral overgrowth

    Oda Katsuya , Okumura Tadashi , Kasai Junichi , Kako Satoshi , Iwamoto Satoshi , Arakawa Yasuhiko

    … Ge waveguides (WGs) were successfully fabricated on an SiO<inf>2</inf>layer by combining epitaxial lateral overgrowth, chemical mechanical polishing (CMP), and reactive ion etching (RIE) of a Ge layer selectively grown on SiO<inf>2</inf>patterns using low-pressure chemical vapor deposition. … Selectivity was promoted by increasing the growth temperature; …

    Jpn. J. Appl. Phys. 55(4S), 04EH06, 2016-03-10

    JSAP

  • AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

    Bergsten Johan , Li Xun , Nilsson Daniel , Danielsson Örjan , Pedersen Henrik , Janzén Erik , Forsberg Urban , Rorsman Niklas

    … AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. … C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. …

    Jpn. J. Appl. Phys. 55(5S), 05FK02, 2016-03-09

    JSAP

  • Developments of Sugar Chain Modified Nano-carbon Field Effect Transistors for the Influenza Bio Sensor

    河原 敏男||カワハラ トシオ||Kawahara Toshio , 玉田 敦子||タマダ アツコ||Tamada Atsuko , 中北 愼一||ナカキタ シンイチ||Nakakita Shinichi

    … In this paper, we have deposited carbon materials by chemical vapor deposition and fabricated FETs using self-alignment process. … The grapho-epitaxy can enhance the graphene layers growth and also induce the defects caused by the strain in the carbon nanowalls (CNWs). … Higher growth temperatures enlarge the grain size in CNWs, and this results in a decrease in carrier scattering at the grain boundary. …

    総合工学 28, 22-29, 2016-03

    IR

  • Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy

    Kusaba Akira , Kangawa Yoshihiro , Honda Yoshio , Amano Hiroshi , Kakimoto Koichi

    … We investigated the surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy using an ab initio-based approach. … We observed that the reconstructed structure changes from In-rich surfaces such as In bilayer and monolayer surfaces to an ideal surface with increasing growth temperature. … In addition, we investigated the effects of surface reconstruction on the growth process using a newly improved thermodynamic analysis method. …

    Jpn. J. Appl. Phys. 55(5S), 05FM01, 2016-02-26

    JSAP

  • GaNSb alloys grown with H

    Komori Daisuke , Takarabe Kaku , Takeuchi Tetsuya , Miyajima Takao , Kamiyama Satoshi , Iwaya Motoaki , Akasaki Isamu

    … We grew GaNSb layers with H<inf>2</inf>and N<inf>2</inf>carrier gases by metalorganic vapor phase epitaxy. … We correlated the obtained GaSb molar fraction with the c-axis lattice constant of GaSb estimated from an X-ray diffraction pattern. … We investigated GaSb molar fractions in GaNSb grown with H<inf>2</inf>and N<inf>2</inf>at various growth temperatures. …

    Jpn. J. Appl. Phys. 55(5S), 05FD01, 2016-02-26

    JSAP

  • Direct growth of nanocrystalline graphitic carbon films on BaF

    Tan Yan , Nakamura Atsushi , Kubono Atsushi

    … Multilayered nanocrystalline graphitic carbon films were directly formed on BaF<inf>2</inf>substrates by the alcohol chemical vapor deposition method using ethanol. … Domain size was typically 46 nm as estimated from the peak intensity ratios of G- and D-band of the Raman spectra, which were higher than currently reported values for various dielectric substrates. …

    Jpn. J. Appl. Phys. 55(3S2), 03DD08, 2016-02-18

    JSAP

  • Film fabrication of Fe or Fe

    Nakamura Kentaro , Kuriyama Naoki , Takagiwa Shota , Sato Taiga , Kushida Masahito

    … As the catalyst for CNT growth, we fabricated Fe or Fe<inf>3</inf>O<inf>4</inf>nanoparticle (NP) films by the Langmuir–Blodgett (LB) technique. … The VA-CNTs were synthesized from the catalyst NP–C<inf>16</inf>LB films by thermal chemical vapor deposition (CVD) using acetylene gas as the carbon source. …

    Jpn. J. Appl. Phys. 55(3S2), 03DD06, 2016-02-09

    JSAP

  • Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition

    Alema Fikadu , Hertog Brian , Ledyaev Oleg , Miller Ross , Osinsky Andrei , Schoenfeld Winston

    … Films grown at T<inf>S</inf>ranging from 500 to 700 °C but at identical PDs had band gaps varying from 3.38 to 3.87 eV, corresponding to Mg content between x = 0.06 and 0.27. …

    Jpn. J. Appl. Phys. 55(3), 035501, 2016-01-29

    JSAP

  • Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices

    Chan Silvia , Tahhan Maher , Liu Xiang , Bisi Davide , Gupta Chirag , Koksaldi Onur , Li Haoran , Mates Tom , DenBaars Steven , Keller Stacia , Mishra Umesh

    … In this paper, we report on the growth and electrical characterization of (Al,Si)O dielectrics grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, oxygen, and silane as precursors. … The growth rates, refractive indices, and composition of (Al,Si)O films grown on Si(001) were determined from ellipsometry and XPS measurements. …

    Jpn. J. Appl. Phys. 55(2), 021501, 2016-01-20

    JSAP

  • Growth Rate and Electrochemical Properties of Boron-Doped Diamond Films Prepared by Hot-Filament Chemical Vapor Deposition Methods

    Nagasaka Hiroshi , Teranishi Yoshikazu , Kondo Yuriko , Miyamoto Takeshi , Shimizu Tetsuhide

    … In this study, to achieve a high synthesis rate of BDD films, trimethyl borate was additionally introduced to a hot-filament chemical vapor deposition (HF-CVD) system as a reactant gas. … It was found that the growth rate and quality of diamond prepared using the HF-CVD system depended on the effect of CH4 concentration on hydrogen, distance from filament to substrate, and supply B/C ratios. …

    e-Journal of Surface Science and Nanotechnology 14(0), 53-58, 2016

    J-STAGE CrossRef

  • <i>In</i>-<i>Situ </i>RHEED Study on Graphene Growth During Chemical Vapor Deposition

    Nakahara Hitoshi , Fujita Sotaro , Minato Takuro , Saito Yahachi

    … Chemical vapor deposition (CVD) of graphene was investigated by using an <i>in-situ</i> … As the result, a streak pattern, which was originated from 2-dimensional graphene, appeared immediately after the start of the growth for all kinds of catalysts. …

    e-Journal of Surface Science and Nanotechnology 14(0), 39-42, 2016

    J-STAGE CrossRef

  • Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

    Coulon Pierre-Marie , Alloing Blandine , Brändli Virginie , Vennéguès Philippe , Leroux Mathieu , Zúñiga-Pérez Jesús

    … The early growth stages of GaN nanowires on GaN-on-sapphire templates with a patterned dielectric mask have been characterized by using transmission electron microscopy. … The dielectric mask aperture (200–800 nm) determines the presence or absence of threading dislocations arising from the underlying template, which results in dislocation-free nanowires for small apertures and dislocation bending for larger apertures, owing to three-dimensional (3D) growth. …

    Appl. Phys. Express 9(1), 015502, 2015-12-14

    JSAP

  • From graphene to carbon nanotube: The oxygen effect on the synthesis of carbon nanomaterials on nickel foil during CVD process

    Chou Yu-Ching , Wu Hsuan-Chung , Hsieh Chien-Kuo

    … In this study, we demonstrated an oxygen-assisted ultralow-pressure (20 mTorr) chemical vapor deposition (CVD) method for the synthesis of carbon nanomaterials, including multilayer graphene (MLG), double-layer graphene (DLG), single-layer graphene (SLG), and carbon nanotubes (CNTs) on a Ni foil substrate. … However, our study provided evidence demonstrating that the growth of MLG, DLG, SLG, and CNTs can be maintained by adjusting the oxygen concentration during the CVD process; …

    Jpn. J. Appl. Phys. 55(1S), 01AE12, 2015-12-09

    JSAP

  • Investigation of crystallinity and planar defects in the Si nanowires grown by vapor–liquid–solid mode using indium catalyst for solar cell applications

    Khan Muhammad , Ishikawa Yasuaki , Kita Ippei , Tani Ayumi , Yano Hiroshi , Fuyuki Takashi , Konagai Makoto

    … In this article, In-catalyzed, vertically aligned, and cone-shaped Si NWs on Si(111) were grown successfully, in the vapor–liquid–solid (VLS) mode. … When T<inf>S</inf>was decreased from 600 °C to room temperature at a rate of 100 °C/240 s after Si NW growth, twinning plane defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed. …

    Jpn. J. Appl. Phys. 55(1S), 01AE03, 2015-10-30

    JSAP

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