Search Results:  1-20 of 2068

  • 1

    Detection of PM2.5 Air Pollutions by Using MODIS Data (Part 1: Differences between the Detection of PM2.5 Air Pollutions and the Detection of Dust and Sandstorms)  [in Japanese]

    加藤 芳信 , Kato Yoshinobu

    … In recent years, PM2.5 air pollution is a social and transboundary environmental issue with the rapid economic growth in many countries. … AVI (Aerosol Vapor Index) is defined as AVI=T12-T11, where T12 and T11 are the brightness temperatures at 12μm and 11μm wave lengths, respectively. …

    福井工業大学研究紀要, 231-242, 2015-08-06

    IR

  • 2

    Red to blue wavelength emission of N-polar [Formula: see text] InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

    Shojiki Kanako , Tanikawa Tomoyuki , Choi Jung-Hun , Kuboya Shigeyuki , Hanada Takashi , Katayama Ryuji , Matsuoka Takashi

    … N-polar [Formula: see text] (−c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. … The optimization of growth conditions for −c-plane InGaN/GaN multiple quantum wells was performed. …

    Appl. Phys. Express 8(6), 061005, 2015-06-04

    JSAP

  • 3

    Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

    Ji Shiyang , Kojima Kazutoshi , Kosugi Ryoji , Saito Shingo , Sakuma Yuuki , Tanaka Yasunori , Yoshida Sadafumi , Himi Hiroaki , Okumura Hajime

    … In this study, 4H-SiC stripe-shaped trenches preformed on an n<sup>+</sup>substrate were filled by adding HCl to the chemical vapor deposition process at relatively high pressures. … HCl was found capable of counterbalancing the deposition on the mesa top by strong etching, and it thus enabled quasi-selective epitaxial growth across the whole extents of the trenches, where the epilayer preferentially grows from the trench bottom. …

    Appl. Phys. Express 8(6), 065502, 2015-06-03

    JSAP

  • 4

    Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates

    Kuritzky Leah , Myers Daniel , Nedy Joseph , Kelchner Kathryn , Nakamura Shuji , DenBaars Steven , Weisbuch Claude , Speck James

    … In<inf>x</inf>Ga<inf>1−</inf><inf>x</inf>N quantum wells (QWs) grown by metalorganic chemical vapor deposition on bulk m-plane GaN substrates with surface miscut −1° … c-miscut”) currently suffer from low indium uptake and broad luminescence linewidth in the blue spectrum. … with miscut components in the combined a- and c-directions exhibit more uniform step flow growth in homoepitaxy than coloaded −1° …

    Appl. Phys. Express 8(6), 061002, 2015-05-22

    JSAP

  • 5

    Characteristics of a liquid microlayer formed by a confined vapor bubble in micro gap boiling between two parallel plates

    Zhang Yaohua , Utaka Yoshio

    … The effects of gap sizes, the velocity of the bubble forefront, and the distance from the bubble inception site were investigated. … Furthermore, the progress of bubble growth in two dimensions with acceleration was simulated by the volume of fluid (VOF) method using the computational fluid dynamics (CFD) package of FLUENT12.1. … The microlayer thickness calculated from the simulation results shows relatively good agreement with the experimental results. …

    International Journal of Heat and Mass Transfer 84, 475-485, 2015-05

    IR

  • 6

    Homoepitaxial growth of a-plane GaN layers by reaction between Ga

    Sumi Tomoaki , Taniyama Yuuki , Takatsu Hiroaki , Juta Masami , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    Growth of high-quality a-plane GaN layers was performed by reaction between Ga<inf>2</inf>O vapor and NH<inf>3</inf>gas at a high temperature. … Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. … Growth rate increased with increasing Ga<inf>2</inf>O partial pressure. … An a-plane GaN layer with a growth rate of 48 µm/h was obtained. …

    Jpn. J. Appl. Phys. 54(6), 065501, 2015-04-30

    JSAP

  • 7

    Growth of GaN layers using Ga

    Sumi Tomoaki , Taniyama Yuuki , Takatsu Hiroaki , Juta Masami , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    … In this study, we performed growth of GaN layers using Ga<inf>2</inf>O vapor synthesized from Ga and H<inf>2</inf>O vapor. … In this process, we employed H<inf>2</inf>O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. …

    Jpn. J. Appl. Phys. 54(5), 051001, 2015-04-07

    JSAP

  • 8

    Room-temperature electroluminescence from radial p–i–n InP/InAsP/InP nanowire heterostructures in the 1.5-µm-wavelength region

    Kawaguchi Kenichi , Sudo Hisao , Matsuda Manabu , Ekawa Mitsuru , Yamamoto Tsuyoshi , Arakawa Yasuhiko

    … Crystal growth of radial p–i–n InP nanowires (NWs) with InAsP quantum well (QW) layers by metalorganic vapor-phase epitaxy was studied, and vertical NW light-emitting devices were fabricated. … The fabricated devices showed current rectification originating from the p–i–n diode structures. … Electroluminescence from the radial QWs was clearly observed in the 1.5-µm-wavelength region at room temperature for the first time. …

    Jpn. J. Appl. Phys. 54(4S), 04DN02, 2015-02-16

    JSAP

  • 9

    Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE

    Ishizaka Fumiya , Hiraya Yoshihiro , Tomioka Katsuhiro , Fukui Takashi

    … A GaP nanowire is promising from the viewpoint of device applications because when its crystal phase is changed from zinc blende (ZB) to wurtzite (WZ), its band gap changes from indirect to direct. … Here we report on the growth of WZ GaP in InP/GaP core-shell nanowires by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). …

    Journal of crystal growth 411, 71-75, 2015-02-01

    IR CrossRef

  • 10

    On heat transfer and evaporation characteristics in the growth process of a bubble with microlayer structure during nucleate boiling

    Chen Zhihao , Utaka Yoshio

    … The initial microlayer thickness was of micrometer order and increased linearly with distance from the bubble inception site. … The quantitative degree of contribution of the microlayer evaporation to bubble growth was still not elucidated, although a large number of experimental studies have been conducted on the distribution and evaporation characteristics of the microlayer. …

    International Journal of Heat and Mass Transfer 81, 750-759, 2015-02

    IR

  • 11

    Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

    Masumoto Keiko , Asamizu Hirokuni , Tamura Kentaro , Kudou Chiaki , Nishio Johji , Kojima Kazutoshi , Ohno Toshiyuki , Okumura Hajime

    … The 3C inclusions were caused by 3C-SiC particles, which were present on the substrates before epitaxial growth, or which had fallen onto the substrates during epitaxial growth from the inside walls of a chemical vapor deposition reactor. … The 3C-inclusion density decreased when the in-situ H<inf>2</inf>etching depth exceeded 0.4 µm because the 3C-SiC particles, which were present on substrates before epitaxial growth, were removed. …

    Jpn. J. Appl. Phys. 54(4S), 04DP04, 2015-01-28

    JSAP

  • 12

    Morphology and Structure Evolutions of Self-Assembled Silver Atomic Islands on Liquid Substrates

    Zhang Xiaofei , Yu Senjiang , Zhou Hong , Lü Neng , Chen Hang

    Journal of the Physical Society of Japan 84(2), 2015-01-20

    JPS

  • 13

    An experimental study on synthesis of β-Sialon composites using fly ash and lignite char–preparation and whiskers formation  [in Japanese]

    ZHAO Huan , WANG Pingyang , YU Jianglong , ZHANG Jing , TAHMASEBI Arash , MENG Fanrui

    … In the growth process of whiskers, bead-shape whiskers were observed, suggesting that the growth mechanism was different from the conventional vapor–liquid–solid (VLS) mechanism. …

    Journal of the Ceramic Society of Japan 123(1439), 542-549, 2015

    CrossRef

  • 14

    Growth mechanism of a fatigue crack of extruded high strength Al alloy 7075-T6 in high humidity  [in Japanese]

    KAWAGOISHI Norio , KARIYA Kohji , CHEN Qiang , NAKAMURA Yuzo , NAGANO Takanori , WANG Qingyuan

    … Effect of humidity on the growth mechanism of a fatigue crack in an age-hardened Al alloy was investigated in relative humidity environments of 25% and 85% at loading frequencies of 50Hz and 6Hz. … Macroscopic growth mode of a crack in low humidity was a tensile one irrespective of loading frequency. …

    TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A 81(825), 14-00694-14-00694, 2015

    CrossRef

  • 15

    Systematic Theoretical Investigations on Surface Reconstruction and Adatom Kinetics on AlN Semipolar Surfaces

    Takemoto Yoshitaka , Akiyama Toru , Nakamura Kohji , Ito Tomonori

    … We find that under the growth condition the adsorption energy of Al adatom on AlN(1-102) surface is much larger than that on AlN(1-101) surface. … These results suggest that impact of hydrogen ambient during the metal-organic vapor-phase epitaxy growth on AlN(1-102) surface is quite different from that on AlN(1-101) surface. …

    e-J. Surf. Sci. Nanotech. 13(0), 239-243, 2015

    CrossRef

  • 16

    Unintentional tungsten incorporation in diamond during hot-filament chemical vapor deposition  [in Japanese]

    Ohmagari Shinya , Srimongkon Kridsanapan , Amornkitbamrung Vittaya , Yamada Hideaki , Chayahara Akiyoshi , Shikata Shin-ichi

    … Hot-filament chemical vapor deposition exhibits high potential for scaled-up diamond growth. … However, contamination from filament materials may adversely affect diamond quality. … Tungsten atoms at concentration levels of 1018 cm-3 were unintentionally incorporated as impurities from filament wires used; … The incorporated amount did not depend on the off-axis angle of substrate, which ranged from 0 to 5°. …

    Trans. Mat. Res. Soc. Japan 40(1), 47-50, 2015

    CrossRef

  • 17

    Analysis of dynamic plasma behaviors in gas metal arc welding by imaging spectroscopy  [in Japanese]

    SHIGETA Masaya , NAKANISHI Shota , TANAKA Manabu , MURPHY Anthony B.

    … For gas metal arc welding, the effect of CO2 mixture in a shielding gas on a metal transfer process was investigated through the observation of the plasma characteristics and dynamic behavior at the droplet's growth-separation-transfer by the temperature measurement methods which were suitable respectively to the argon plasma region and the metal plasma region. …

    JOURNAL OF THE JAPAN WELDING SOCIETY 33(2), 118-125, 2015

    CrossRef

  • 18

    Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy

    PANSILA P. Pungboon , KANOMATA Kensaku , AHMMAD Bashir , KUBOTA Shigeru , HIROSE Fumihiko

    … In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100–450°C, although the room-temperature (RT) growth has not been developed. …

    IEICE Trans. Electron. E98.C(5), 382-389, 2015

    CrossRef

  • 19

    Growth mechanism of a fatigue crack of extruded high strength Al alloy 7075-T6 in high humidity  [in Japanese]

    KAWAGOISHI Norio , KARIYA Kohji , CHEN Qiang , NAKAMURA Yuzo , NAGANO Takanori , WANG Qingyuan

    … Effect of humidity on the growth mechanism of a fatigue crack in an age-hardened Al alloy was investigated in relative humidity environments of 25% and 85% at loading frequencies of 50Hz and 6Hz. … Macroscopic growth mode of a crack in low humidity was a tensile one irrespective of loading frequency. …

    TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A advpub(0), 2015

    CrossRef

  • 20

    Observation of Adsorbed Water on Ultrathin GeO2/Ge(100) by Ambient-Pressure X-ray Photoelectron Spectroscopy (AP-XPS)  [in Japanese]

    ARIMA Kenta

    … This implies that GeO2 films will react with water vapor in air. … In this review, water growth on ultrathin GeO2 films on a Ge(100) substrate as well as the effect of water layers on the electronic properties of GeO2 films are investigated by ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) at relative humidities (RHs) from 0% to approximately 45%. …

    Shinku 58(1), 20-26, 2015

    CrossRef