Search Results 1-20 of 2009

  • Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition

    Alema Fikadu , Hertog Brian , Ledyaev Oleg , Miller Ross , Osinsky Andrei , Schoenfeld Winston

    … Films grown at T<inf>S</inf>ranging from 500 to 700 °C but at identical PDs had band gaps varying from 3.38 to 3.87 eV, corresponding to Mg content between x = 0.06 and 0.27. …

    Jpn. J. Appl. Phys. 55(3), 035501, 2016-01-29


  • Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices

    Chan Silvia , Tahhan Maher , Liu Xiang , Bisi Davide , Gupta Chirag , Koksaldi Onur , Li Haoran , Mates Tom , DenBaars Steven , Keller Stacia , Mishra Umesh

    … In this paper, we report on the growth and electrical characterization of (Al,Si)O dielectrics grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, oxygen, and silane as precursors. … The growth rates, refractive indices, and composition of (Al,Si)O films grown on Si(001) were determined from ellipsometry and XPS measurements. …

    Jpn. J. Appl. Phys. 55(2), 021501, 2016-01-20


  • Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

    Coulon Pierre-Marie , Alloing Blandine , Brändli Virginie , Vennéguès Philippe , Leroux Mathieu , Zúñiga-Pérez Jesús

    … The early growth stages of GaN nanowires on GaN-on-sapphire templates with a patterned dielectric mask have been characterized by using transmission electron microscopy. … The dielectric mask aperture (200–800 nm) determines the presence or absence of threading dislocations arising from the underlying template, which results in dislocation-free nanowires for small apertures and dislocation bending for larger apertures, owing to three-dimensional (3D) growth. …

    Appl. Phys. Express 9(1), 015502, 2015-12-14


  • From graphene to carbon nanotube: The oxygen effect on the synthesis of carbon nanomaterials on nickel foil during CVD process

    Chou Yu-Ching , Wu Hsuan-Chung , Hsieh Chien-Kuo

    … In this study, we demonstrated an oxygen-assisted ultralow-pressure (20 mTorr) chemical vapor deposition (CVD) method for the synthesis of carbon nanomaterials, including multilayer graphene (MLG), double-layer graphene (DLG), single-layer graphene (SLG), and carbon nanotubes (CNTs) on a Ni foil substrate. … However, our study provided evidence demonstrating that the growth of MLG, DLG, SLG, and CNTs can be maintained by adjusting the oxygen concentration during the CVD process; …

    Jpn. J. Appl. Phys. 55(1S), 01AE12, 2015-12-09


  • Investigation of crystallinity and planar defects in the Si nanowires grown by vapor–liquid–solid mode using indium catalyst for solar cell applications

    Khan Muhammad , Ishikawa Yasuaki , Kita Ippei , Tani Ayumi , Yano Hiroshi , Fuyuki Takashi , Konagai Makoto

    … In this article, In-catalyzed, vertically aligned, and cone-shaped Si NWs on Si(111) were grown successfully, in the vapor–liquid–solid (VLS) mode. … When T<inf>S</inf>was decreased from 600 °C to room temperature at a rate of 100 °C/240 s after Si NW growth, twinning plane defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed. …

    Jpn. J. Appl. Phys. 55(1S), 01AE03, 2015-10-30


  • Thermodynamic Descriptions of Sublimation-recrystallization based Growth Mechanisms for SiC Single Crystals(<Special Issue>Recent Advance in Functional Single Crystals)  [in Japanese]

    Fujimoto Tatsuo

    Growth processes occurring in Physical Vapor Transport (PVT) method for SiC single crystals are described in view of quasi-equilibrium phase transitions. … In particular, technical directions obtainable from thermodynamic descriptions of the PVT will be quite useful when growth conditions have to be optimized for realizing SiC crystals with higher crystallinity upon suppressing unwanted perturbations such as foreign phase precipitations. …

    Journal of the Japanese Association of Crystal Growth 42(2), 148-155, 2015-07

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  • Red to blue wavelength emission of N-polar [Formula: see text] InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

    Shojiki Kanako , Tanikawa Tomoyuki , Choi Jung-Hun , Kuboya Shigeyuki , Hanada Takashi , Katayama Ryuji , Matsuoka Takashi

    … N-polar [Formula: see text] (−c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. … The optimization of growth conditions for −c-plane InGaN/GaN multiple quantum wells was performed. …

    Appl. Phys. Express 8(6), 061005, 2015-06-04


  • Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

    Ji Shiyang , Kojima Kazutoshi , Kosugi Ryoji , Saito Shingo , Sakuma Yuuki , Tanaka Yasunori , Yoshida Sadafumi , Himi Hiroaki , Okumura Hajime

    … In this study, 4H-SiC stripe-shaped trenches preformed on an n<sup>+</sup>substrate were filled by adding HCl to the chemical vapor deposition process at relatively high pressures. … HCl was found capable of counterbalancing the deposition on the mesa top by strong etching, and it thus enabled quasi-selective epitaxial growth across the whole extents of the trenches, where the epilayer preferentially grows from the trench bottom. …

    Appl. Phys. Express 8(6), 065502, 2015-06-03


  • Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates

    Kuritzky Leah , Myers Daniel , Nedy Joseph , Kelchner Kathryn , Nakamura Shuji , DenBaars Steven , Weisbuch Claude , Speck James

    … In<inf>x</inf>Ga<inf>1−</inf><inf>x</inf>N quantum wells (QWs) grown by metalorganic chemical vapor deposition on bulk m-plane GaN substrates with surface miscut −1° … c-miscut”) currently suffer from low indium uptake and broad luminescence linewidth in the blue spectrum. … with miscut components in the combined a- and c-directions exhibit more uniform step flow growth in homoepitaxy than coloaded −1° …

    Appl. Phys. Express 8(6), 061002, 2015-05-22


  • Characteristics of a liquid microlayer formed by a confined vapor bubble in micro gap boiling between two parallel plates

    Zhang Yaohua , Utaka Yoshio

    … The effects of gap sizes, the velocity of the bubble forefront, and the distance from the bubble inception site were investigated. … Furthermore, the progress of bubble growth in two dimensions with acceleration was simulated by the volume of fluid (VOF) method using the computational fluid dynamics (CFD) package of FLUENT12.1. … The microlayer thickness calculated from the simulation results shows relatively good agreement with the experimental results. …

    International Journal of Heat and Mass Transfer 84, 475-485, 2015-05


  • Homoepitaxial growth of a-plane GaN layers by reaction between Ga

    Sumi Tomoaki , Taniyama Yuuki , Takatsu Hiroaki , Juta Masami , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    Growth of high-quality a-plane GaN layers was performed by reaction between Ga<inf>2</inf>O vapor and NH<inf>3</inf>gas at a high temperature. … Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. … Growth rate increased with increasing Ga<inf>2</inf>O partial pressure. … An a-plane GaN layer with a growth rate of 48 µm/h was obtained. …

    Jpn. J. Appl. Phys. 54(6), 065501, 2015-04-30


  • Growth of GaN layers using Ga

    Sumi Tomoaki , Taniyama Yuuki , Takatsu Hiroaki , Juta Masami , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    … In this study, we performed growth of GaN layers using Ga<inf>2</inf>O vapor synthesized from Ga and H<inf>2</inf>O vapor. … In this process, we employed H<inf>2</inf>O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. …

    Jpn. J. Appl. Phys. 54(5), 051001, 2015-04-07


  • Room-temperature electroluminescence from radial p–i–n InP/InAsP/InP nanowire heterostructures in the 1.5-µm-wavelength region

    Kawaguchi Kenichi , Sudo Hisao , Matsuda Manabu , Ekawa Mitsuru , Yamamoto Tsuyoshi , Arakawa Yasuhiko

    … Crystal growth of radial p–i–n InP nanowires (NWs) with InAsP quantum well (QW) layers by metalorganic vapor-phase epitaxy was studied, and vertical NW light-emitting devices were fabricated. … The fabricated devices showed current rectification originating from the p–i–n diode structures. … Electroluminescence from the radial QWs was clearly observed in the 1.5-µm-wavelength region at room temperature for the first time. …

    Jpn. J. Appl. Phys. 54(4S), 04DN02, 2015-02-16


  • Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE

    Ishizaka Fumiya , Hiraya Yoshihiro , Tomioka Katsuhiro , Fukui Takashi

    … A GaP nanowire is promising from the viewpoint of device applications because when its crystal phase is changed from zinc blende (ZB) to wurtzite (WZ), its band gap changes from indirect to direct. … Here we report on the growth of WZ GaP in InP/GaP core-shell nanowires by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). …

    Journal of crystal growth 411, 71-75, 2015-02-01

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  • On heat transfer and evaporation characteristics in the growth process of a bubble with microlayer structure during nucleate boiling

    Chen Zhihao , Utaka Yoshio

    … The initial microlayer thickness was of micrometer order and increased linearly with distance from the bubble inception site. … The quantitative degree of contribution of the microlayer evaporation to bubble growth was still not elucidated, although a large number of experimental studies have been conducted on the distribution and evaporation characteristics of the microlayer. …

    International Journal of Heat and Mass Transfer 81, 750-759, 2015-02


  • Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

    Masumoto Keiko , Asamizu Hirokuni , Tamura Kentaro , Kudou Chiaki , Nishio Johji , Kojima Kazutoshi , Ohno Toshiyuki , Okumura Hajime

    … The 3C inclusions were caused by 3C-SiC particles, which were present on the substrates before epitaxial growth, or which had fallen onto the substrates during epitaxial growth from the inside walls of a chemical vapor deposition reactor. … The 3C-inclusion density decreased when the in-situ H<inf>2</inf>etching depth exceeded 0.4 µm because the 3C-SiC particles, which were present on substrates before epitaxial growth, were removed. …

    Jpn. J. Appl. Phys. 54(4S), 04DP04, 2015-01-28


  • Morphology and Structure Evolutions of Self-Assembled Silver Atomic Islands on Liquid Substrates

    Zhang Xiaofei , Yu Senjiang , Zhou Hong , Lü Neng , Chen Hang

    … We report on the morphology and structure evolutions of silver (Ag) atomic islands deposited on liquid substrates by vapor deposition. … It is found that, as the nominal film thickness <italic>h</italic>is less than or equal to the critical value <italic>h</italic><sub>c</sub>, the morphology of the islands evolves gradually from compact to branched islands, and the apparent Ag surface coverage ρ of the total area increases linearly with <italic>h</italic>. …

    Journal of the Physical Society of Japan 84(2), 024603-1-5, 2015-01-20


  • Numerical analysis of collective growth of primary fume particles in arc welding  [in Japanese]

    SHIGETA Masaya , MIYAKE Masayoshi , TANAKA Manabu

    … This study clarifies the collective growth processes and size distributions of fume primary particles generated around an arc plasma in welding by numerical analysis using a model which can treat growth through homogeneous nucleation, heterogeneous condensation and coagulation among particles with any size distribution ranging from sub-nanometers to a few hundreds nanometers. …


    J-STAGE CrossRef

  • Experimental Study on Behaviors of Two Successive Bubbles in Subcooled Flow Boiling at High Degrees of Subcooling  [in Japanese]

    CAO Yang , KAWARA Zensaku , YOKOMINE Takehiko , KUNUGI Tomoaki

    … This phenomenon was caused by the severe deformation of the first bubble departing from the wall, and the second bubble grows from the remaining vapor of the first bubble after its departure from the wall. … Quantitative data were also obtained to analyze the bubble behavior, such as the maximum size of the second bubble was smaller than the first one, and both the growth and condensation rates of the second bubble were slower than the first bubble. …

    TSE 23(4), 89-97, 2015

    J-STAGE CrossRef

  • Single-Walled Carbon Nanotube Growth from Pt catalysts using Alcohol Gas Source Method: Comparison with Co catalysts

    Kozawa Akinari , Kondo Hiroki , Saida Takahiro , Naritsuka Shigeya , Maruyama Takahiro

    … Single-walled carbon nanotube (SWNT) growth using Pt as catalysts was carried out by an alcohol gas source method, a type of cold-wall chemical vapor deposition (CVD), and the properties of SWNTs grown from Pt catalysts were compared to those grown from Co catalysts. …

    Trans. Mat. Res. Soc. Japan 40(4), 405-408, 2015

    J-STAGE CrossRef

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