Search Results:  1-20 of 1895

  • 1

    Molecular dynamics simulations of the nucleation of water: Determining the sticking probability and formation energy of a cluster

    Tanaka Kyoko K. , Kawano Akio , Tanaka Hidekazu

    … We performed molecular dynamics simulations of the nucleation of water vapor in order to test nucleation theories. … We obtained the nucleation rates and the formation free energies of a subcritical cluster from the cluster size distribution. …

    Journal of Chemical Physics 140(11), 114302, 2014-03-21

    IR CrossRef

  • 2

    Developments of Self-alignment Process for Few Layers of Graphene with Low Gas Pressure and Short Deposition Time

    河原 敏男||カワハラ トシオ||Kawahara Toshio , 玉田 敦子||タマダ アツコ||Tamada Atsuko

    … Depending on the growth condition, the grapho-epitaxy can enhance the graphene layers growth. … In this paper, we have deposited carbon materials by chemical vapor deposition with low gas pressure and short deposition time for the search of graphene growth. … From Raman spectra, moderate range of growth condition is better for the nano carbon growth. …

    総合工学 26, 30, 2014-03


  • 3

    Luminescence property of hexagonal boron nitride films grown by high-temperature CVD  [in Japanese]

    UMEHARA Naoki , KUWAHARA Iori , LEE Hey-Young , KOUNO Tetsuya , KOMINAMI Hiroko , NAKANISHI Yoichiro , HARA Kazuhiko

    BCl_3とNH_3を原料とする常圧の化学気相法を用いて,c面サファイア基板上に六方晶窒化ホウ素(h-BN)薄膜の作製を行った.成長温度は1300〜1700℃であり,同じ温度でNH_3による基板表面の窒化を行った後に成長を開始した.X線回折の成長温度依存性から,成長温度の上昇に伴い結晶化が促進され,1500℃でc軸に強く配向した薄膜が得られた,しかしさらに高い温度では,過度の基板窒化による結晶性の …

    IEICE technical report. Electronic information displays 113(408), 25-28, 2014-01-17

    CiNii Fulltext PDF - Limited 

  • 4

    Crystallographic and Electric Properties of Multilayer Graphene Grown by Photoemission Assisted-Plasma Enhanced CVD: H2 versus Ar for career gas

    OJIRO Yoshihiro , OGAWA Shuichi , SATOU Motonobu , NIHEI Mizuhisa , TAKAKUWA Yuji

    … Networked nanographite (NNG) was grown by using photoemission-assisted plasma enhanced chemical vapor deposition (CVD) on SiO2 (90 nm) /Si substrates and the career gas dependence of electric resistivity, chemical configuration, and grain size was investigated from Raman spectroscopy, SIMS, and four probes method. … NNG with the thickness from 2∼60 nm was grown by changing the growth period. …

    Hyomen Kagaku 35(8), 420-425, 2014

    J-STAGE CrossRef

  • 5

    Numerical simulation on the heat transfer characteristics during the bubble growth considering microlayer evaporation in nucleate boiling  [in Japanese]

    CHEN Zhihao , TAGUCHI Takeshi , UTAKA Yoshio

    … The initial microlayer thickness was found to increase linearly with distance from the bubble inception site. … Although a large amount of heat transport results from the evaporation of microlayer during the growth process of bubble, the quantitative degree of contribution of microlayer evaporation was not elucidated. …

    Transactions of the JSME (in Japanese) 80(812), TEP0097-TEP0097, 2014

    J-STAGE CrossRef

  • 6

    Improvement of mode-Ⅱ interface mechanical properties of Al/GFRP composite laminates by VGCF  [in Japanese]

    AZUMA Takeru , NING Huiming , WATANABE Tomonori , HU Ning

    … In this work, interlaminar mechanical properties, e.g., fracture toughness, of GLARE are improved by acid treatment to Al and adding Vapor Grown Carbon Fiber (VGCF) between Al and GFRP layers. … From the results of ENF tests for Mode-Ⅱ properties, when 10g/m2 of VGCF are added between Al with acid treatment and GFRP layers in GLARE, critical load (PC) and critical strain energy release rate in Mode-Ⅱ(GⅡC) increase most significantly due to the fiber bridging effect, i.e., 118% and 345%, respectively. …

    Transactions of the JSME (in Japanese) 80(810), SMM0021-SMM0021, 2014

    J-STAGE CrossRef

  • 7

    A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy

    Lee Moonsang , Mikulik Dmitry , Kim Joosung , Tak Youngjo , Kim Junyoun , Shim Munbo , Park Youngsoo , Chung Uin , Yoon Euijoon , Park Sungsoo

    … diameter and 400 μm thickness grown from Si substrate by hydride vapor phase epitaxy. …

    Applied Physics Express 6(12), 125502-125502-4, 2013-12-25

    The Japan Society of Applied Physics

  • 8

    Control of Magnetic Properties of Carbon Nanotubes Filled with Iron

    Sato Hideki , Nagata Atsushi , Kubonaka Nobuo , Fujiwara Yuji

    … Carbon nanotubes (CNTs) filled with iron nanowires show high coercivity owing to their shape anisotropy originating from the high-aspect-ratio shapes of the iron nanowires. … In this study, CNTs filled with iron were prepared by the thermal chemical vapor deposition (T-CVD) method using ferrocene as a precursor, and the magnetic properties of the synthesized CNTs were examined in detail. …

    Jpn J Appl Phys 52(11), 11NL03-11NL03-6, 2013-11-25

    The Japan Society of Applied Physics

  • 9

    Optimization of In

    Tan Ming , Lu Shulong , Ji Lian , Zhu Yaqi , Chen Zhiming

    … An In<inf>0.68</inf>Ga<inf>0.32</inf>As thermophotovoltaic (TPV) cell on a compositionally nonmonotonically graded InAsP buffer with a band gap energy of 0.60 eV grown by metal--organic chemical vapor deposition (MOCVD) has been fabricated. … The performance of the TPV device was greatly improved with optimized material growth, the use of an absorption layer of suitable width, and appropriate TiO<inf>2</inf>/SiO<inf>2</inf>antireflective coating design. …

    Jpn J Appl Phys 52(11), 116504-116504-3, 2013-11-25

    The Japan Society of Applied Physics

  • 10

    Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy

    Bryant Benjamin N. , Young Erin C. , Wu Feng , Fujito Kenji , Nakamura Shuji , Speck James S.

    … In this study we demonstrate a direct correlation between carrier gas and the generation of basal plane stacking faults (BPSF) in m-plane GaN during hydride vapor phase epitaxy (HVPE) regrowth. … In this work, high-quality m-plane free-standing substrates were regrown by HVPE under a wide range of growth conditions and carrier gases. …

    Applied Physics Express 6(11), 115502-115502-4, 2013-11-25

    The Japan Society of Applied Physics

  • 11

    Fabrication of titanium oxide using plasma excited atomic layer deposition  [in Japanese]

    Kanomata Kensaku , ohba Hisashi , Momiyama Katsuaki , Suzuki Takahiko , Ahmmad Bashil , Kubota Shigeru , Hirahara Kazuhiro , Hirose Fumihiko

    我々はtetrakis(dimethylamino)titanium(TDMAT)とプラズマ励起水蒸気を用いたチタン酸化膜の室温原子層堆積法を開発した。プラズマ励起水蒸気は酸化チタン表面に吸着したTDMATを効果的に酸化すると同時にTDMATの吸着サイトとなるOH基を室温で成長表面上に形成する。本方法では、チタン酸化膜の成長速度は室温において0.157nm/cycleと測定された。またチタン酸化膜 …

    IEICE technical report. Component parts and materials 113(268), 45-48, 2013-10-17

    CiNii Fulltext PDF - Limited 

  • 12

    Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy

    Akasaka Tetsuya , Kobayashi Yasuyuki , Kasu Makoto [他]

    Applied physics express : APEX 6(10), 105501-1-4, 2013-10

  • 13

    Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

    Lv Wenbin , Wang Lai , Wang Jiaxing , Xing Yuchen , Zheng Jiyuan , Yang Di , Hao Zhibiao , Luo Yi

    … We have successfully implemented green and red light-emitting diodes (LEDs) based on InGaN/GaN quantum dots (QDs) grown by controlling the process of the growth interruption method using metal organic vapor phase epitaxy (MOVPE). … It is found that the three-step growth interruption method and the underlying InGaN/GaN superlattice structure are beneficial for achieving greater indium incorporation in InGaN QDs. …

    Jpn J Appl Phys 52(8), 08JG13-08JG13-4, 2013-08-25

    The Japan Society of Applied Physics

  • 14

    Nature of V-Shaped Defects in GaN

    Voronenkov Vladislav , Bochkareva Natalia , Gorbunov Ruslan , Latyshev Philipp , Lelikov Yuri , Rebane Yury , Tsyuk Alexander , Zubrilov Andrey , Shreter Yuri

    … GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. … V-shaped defects (pits) with densities from 1 to 100 cm<sup>-2</sup>were found on the surfaces of the films. … Pits can be overgrown intentionally by varying growth parameters to increase the growth rate of pit facets. …

    Jpn J Appl Phys 52(8), 08JE14-08JE14-4, 2013-08-25

    The Japan Society of Applied Physics

  • 15

    Effect of High NH

    Togashi Rie , Yamamoto Sho , Karlsson K. Fredrik , Murakami Hisashi , Kumagai Yoshinao , Holtz Per-Olof , Koukitu Akinori

    … The influence of the source gas supply sequence prior to growth and the NH<inf>3</inf>input partial pressure (P^{\text{o}}_{\text{NH3}}) on the nucleation of InN islands during the initial stages of hydride vapor phase epitaxy on a nitrided (0001) sapphire substrate was investigated. … The crystalline quality of the InN layer after subsequent lateral growth was also examined. …

    Jpn J Appl Phys 52(8), 08JD05-08JD05-4, 2013-08-25

    The Japan Society of Applied Physics

  • 16

    Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal--Organic Vapor Phase Epitaxy

    Yayama Tomoe , Kangawa Yoshihiro , Kakimoto Koichi

    … The effect of growth orientation on In incorporation efficiency in InGaN films grown by metal--organic vapor phase epitaxy (MOVPE) is theoretically investigated. … A surface N--H layer that covers a group-III (In, Ga) atomic layer prevents In atoms from desorbing and being replaced by Ga atoms. … This enthalpy change which depends on growth orientations is in good agreement with the experimental In content. …

    Jpn J Appl Phys 52(8), 08JC02-08JC02-3, 2013-08-25

    The Japan Society of Applied Physics

  • 17

    Effect of Growth Temperature on Formation of Amorphous Nitride Interlayer between AlN and Si(111)

    Lin Pei-Yin , Chen Jr-Yu , Chen Yu-Chang , Chang Li

    … The formation of an amorphous interlayer between AlN and Si(111), which may degrade the film quality, is studied by varying the substrate temperature from 860 to 1010 °C in metal--organic chemical vapor deposition with a preflow of trimethylaluminum. … Cross-sectional TEM examinations show that AlN is directly in contact with Si for growth at 860 °C. …

    Jpn J Appl Phys 52(8), 08JB20-08JB20-4, 2013-08-25

    The Japan Society of Applied Physics

  • 18

    Growth of GaN Columns and Microstructures on (111) Si by Using Ge Layer via Metal Organic Chemical Vapor Deposition

    Park Jinsub , Shin Keun Wook , Kim Jong Hak , Yoon Euijoon

    … We demonstrate the successful growth of GaN columnar and microdisk structures on a (111) Ge/Si substrate via metal organic chemical vapor deposition. … The relatively higher growth temperature induces a change in surface morphology of GaN from columnar to microdisk structures. … The possible growth mechanism of columnar structured GaN was considered from the Ga-metal/Ge eutectic materials system. …

    Jpn J Appl Phys 52(8), 08JC09-08JC09-3, 2013-08-25

    The Japan Society of Applied Physics

  • 19

    AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}

    Albrecht Björn , Kopta Susanne , John Oliver , Kirste Lutz , Driad Rachid , Köhler Klaus , Walther Martin , Ambacher Oliver

    … Structures were grown by metalorganic vapor phase epitaxy on (0001) sapphire substrates using three-dimensional GaN as well as high temperature AlN nucleation. … Very high specific detectivities of 1\times 10^{14} cm Hz<sup>0.5</sup>W<sup>-1</sup>can be achieved based on optimized growth conditions of undoped and doped AlGaN layers with an Al-content ranging from 0% up to 100%. …

    Jpn J Appl Phys 52(8), 08JB28-08JB28-4, 2013-08-25

    The Japan Society of Applied Physics

  • 20

    200-mm GaN-on-Si Based Blue Light-Emitting Diode Wafer with High Emission Uniformity

    Nishikawa Atsushi , Groh Lars , Solari William , Lutgen Stephan

    … We investigated the emission wavelength uniformity of 200-mm GaN-on-Si based blue light-emitting diode (LED) wafer grown by metalorganic vapor phase epitaxy (MOVPE). … The larger the Si substrate diameter becomes, the more difficult to obtain uniform distribution of the emission wavelength because of the larger bow during growth, resulting in larger on-wafer inhomogeneity in growth temperature. …

    Jpn J Appl Phys 52(8), 08JB25-08JB25-3, 2013-08-25

    The Japan Society of Applied Physics

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