検索結果 2082件中 1-20 を表示

  • Electrical properties of Ni/n-GaN Schottky diodes on freestanding m-plane GaN substrates

    Yamada Hisashi , Chonan Hiroshi , Takahashi Tokio , Shimizu Mitsuaki

    … The electrical properties of m-plane Ni/n-GaN Schottky diodes grown via metalorganic chemical vapor deposition were investigated. … Under growth at 1,120 °C with a V/III ratio of 1,000 (growth rate of 100 nm/min), the residual Si, O, and C impurity concentrations in the m-plane GaN layer were below the secondary-ion mass spectroscopy detection limit. …

    Appl. Phys. Express 10(4), 041001, 2017-02-28

    応用物理学会

  • Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    Yanase Shougo , Sasakura Hirotaka , Hara Shinjiro , Motohisa Junichi

    … We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. … InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. …

    Jpn. J. Appl. Phys. 56(4S), 04CP04, 2017-02-17

    応用物理学会

  • Strong impact of slight trench direction misalignment from [Formula: see text] on deep trench filling epitaxy for SiC super-junction devices

    Kosugi Ryoji , Ji Shiyang , Mochizuki Kazuhiro , Kouketsu Hidenori , Kawada Yasuyuki , Fujisawa Hiroyuki , Kojima Kazutoshi , Yonezawa Yoshiyuki , Okumura Hajime

    … A trench filling epitaxial growth technique using hot-wall chemical vapor deposition with HCl gas has been developed for SiC super-junction (SJ) device fabrication. … on a surface plane towards the [Formula: see text] direction were formed on an off-angled wafer, and the effects of trench direction misalignment from the off-direction were investigated. … Tilted growth on the mesa top reduced the filling rate at the trench bottom and caused void formation. …

    Jpn. J. Appl. Phys. 56(4S), 04CR05, 2017-02-13

    応用物理学会

  • Crystal growth mechanism of Cu

    Sugimoto Kanta , Suyama Naoki , Nakada Kazuyoshi , Yamada Akira

    … In this paper, we study the reaction mechanisms involved in the transformation from the precursor prepared with nanoparticles to the Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf>phase during solid-phase sulfurization and selenization. … During sintering, the film was first sulfurized because of the difference between the vapor pressures of S and Se. …

    Jpn. J. Appl. Phys. 56(3), 035502, 2017-02-06

    応用物理学会

  • Thermal Treatment Effect on Morphology and Photo-Physical Properties of Bis-Styrylbenzene Derivatives

    MOCHIZUKI Hiroyuki

    … <p>Characteristics of the bis-styrylbenzene derivatives with trifluoromethyl or methyl moieties were evaluated in each as-vapor-deposited film, thermally-treated film, and the crystal from the solution. … Thermal treatment dramatically changed morphologies and photo-physical properties of the vapor-deposited film.</p> …

    IEICE Transactions on Electronics E100.C(2), 145-148, 2017

    DOI

  • 湿度可変偏光解析法でみたナフィオン<sup>®</sup>超薄膜の水分子収着

    吉本 茂 , 細見 博之 , 高井 良浩 , 伊藤 賢志

    ナフィオン<sup>®</sup>薄膜の熱膨張率および膨潤率を温湿度可変分光偏光解析法により評価し,超薄膜化によるナノスケール構造変化を考察した.70°Cにおける線膨張係数は厚さが100 nm以下で膜厚の減小とともに増大し,超薄膜化による疎水性主鎖の運動性の上昇が示唆された.一方,厚さ100 nm以下の薄膜における相対膜厚湿度依存性から評価した膨潤率は初期膜 …

    高分子論文集, 2017

    DOI

  • Synthesis of gallium nitride nano-wires on nickel–alumina composites from gallium oxide powder under a low partial pressure of ammonia

    KIYONO Hajime , CHINDO Masatoshi , MARUOKA Daisuke , NANKO Makoto

    … TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor–liquid–solid growth mechanism. …

    Journal of the Ceramic Society of Japan 125(1), 50-54, 2017

    DOI

  • Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Uno Kazuyuki , Yamasaki Yuichiro , Tanaka Ichiro

    … The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. …

    Appl. Phys. Express 10(1), 015502, 2016-12-28

    応用物理学会

  • AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    Jeon Hunsoo , Jeon Injun , Lee Gang , Bae Sung , Ahn Hyung , Yang Min , Yi Sam , Yu Young , Honda Yoshio , Sawaki Nobuhiko , Kim Suck-Whan

    … High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. … The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. …

    Jpn. J. Appl. Phys. 56(1S), 01AD07, 2016-12-12

    応用物理学会

  • Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

    Fujita Shizuo , Oda Masaya , Kaneko Kentaro , Hitora Toshimi

    … They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. … Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. …

    Jpn. J. Appl. Phys. 55(12), 1202A3, 2016-11-17

    応用物理学会

  • Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy

    Lee Gang , Jeon Hunsoo , Ahn Hyung , Yang Min , Yi Sam , Yu Young , Lee Sang , Honda Yoshio , Sawaki Nobuhiko , Kim Suck-Whan

    … We developed a vertical-type light-emitting diode (LED) in which the substrate is removed using a hydride vapor phase epitaxy (HVPE) apparatus consisting of a multi-graphite boat filled with a mixed source and a high-temperature (T ≈ … The new chip-growth process with a significant reduction in the number of production steps is completed in only four steps, namely, photolithography, epitaxial layer growth, sorting, and metallization. …

    Jpn. J. Appl. Phys. 56(1S), 01AD03, 2016-11-04

    応用物理学会

  • Growth of rocksalt-structured Mg

    Kaneko Kentaro , Onuma Takeyoshi , Tsumura Keiichi , Uchida Takayuki , Jinno Riena , Yamaguchi Tomohiro , Honda Tohru , Fujita Shizuo

    … 0.5) alloy films were grown on MgO substrates using the mist chemical vapor deposition method. … The bandgap was tuned from 5.9 to 7.8 eV as x varied from 0.5 to 1. … Deep ultraviolet cathodoluminescence, stemming from near band edge transitions, was observed for Mg<inf>0.57</inf>Zn<inf>0.43</inf>O in the 4.8–5.5 eV range, peaking at ∼5.1 eV (∼240 nm) in the 12–100 K range. …

    Appl. Phys. Express 9(11), 111102, 2016-10-18

    応用物理学会

  • Novel integration method for III–V semiconductor devices on silicon platform

    Matsumoto Keiichi , Kishikawa Junya , Nishiyama Tetsuo , Onuki Yuya , Shimomura Kazuhiko

    … Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. … After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. … Furthermore, almost no lattice strain was observed from the InP layer. …

    Jpn. J. Appl. Phys. 55(11), 112201, 2016-09-29

    応用物理学会

  • Solution-based mist CVD technique for CH

    Nishinaka Hiroyuki , Yoshimoto Masahiro

    … We report the growth of inorganic–organic perovskites using a solution-based mist chemical vapor deposition (mist CVD) technique and the successful growth of the alloying CH<inf>3</inf>NH<inf>3</inf>Pb(Br<inf>1−</inf><inf>x</inf>Cl<inf>x</inf>)<inf>3</inf>using mixture solutions of Br and Cl precursors. …

    Jpn. J. Appl. Phys. 55(10), 100308, 2016-09-23

    応用物理学会

  • Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition

    Rajesh Mohan , Nishioka Masao , Arakawa Yasuhiko

    … We report the first demonstration of electroluminescence at 1.3 µm from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). … The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. …

    Jpn. J. Appl. Phys. 55(10), 100304, 2016-09-15

    応用物理学会

  • CVD合成ダイヤモンド結晶を起点とした単層カーボンナノチューブの成長

    石川 豊 , 長谷川 光斗

    表面技術 = Journal of the Surface Finishing Society of Japan 67(7), 380-382, 2016-07

  • Thin film deposition at atmospheric pressure using dielectric barrier discharges: Advances on three-dimensional porous substrates and functional coatings

    Fanelli Fiorenza , Bosso Piera , Mastrangelo Anna , Fracassi Francesco

    … Surface processing of materials by atmospheric pressure dielectric barrier discharges (DBDs) has experienced significant growth in recent years. … Considerable research efforts have been directed for instance to develop a large variety of processes which exploit different DBD electrode geometries for the direct and remote deposition of thin films from precursors in gas, vapor and aerosol form. …

    Jpn. J. Appl. Phys. 55(7S2), 07LA01, 2016-06-15

    応用物理学会

  • Preparation of hydrogenated diamond-like carbon films using high-density pulsed plasmas of Ar/C

    Kimura Takashi , Kamata Hikaru

    … Hydrogenated diamond-like carbon films are prepared using reactive high-density pulsed plasmas of Ar/C<inf>2</inf>H<inf>2</inf>and Ne/C<inf>2</inf>H<inf>2</inf>mixture in the total pressure range from 0.5 to 2 Pa. …

    Jpn. J. Appl. Phys. 55(7S2), 07LE02, 2016-06-10

    応用物理学会

  • Growth and optical properties of Nb-doped WS

    Sasaki Shogo , Kobayashi Yu , Liu Zheng , Suenaga Kazutomo , Maniwa Yutaka , Miyauchi Yuhei , Miyata Yasumitsu

    … We report the chemical vapor deposition growth of Nb-doped WS<inf>2</inf>monolayers and their characterization. … These results indicate that the observed PL peaks are assignable to the emission from impurity states generated by the substitution of Nb. …

    Appl. Phys. Express 9(7), 071201, 2016-06-02

    応用物理学会

  • Metal–organic chemical vapor deposition growth of β-FeSi

    Akiyama Kensuke , Motoizumi Yuu , Funakubo Hiroshi , Irie Hiroshi , Matsumoto Yoshihisa

    … Semiconducting iron disilicide (β-FeSi<inf>2</inf>) island grains of a few hundred nanometers in diameter were formed on the surface of Si powder by metal–organic chemical vapor deposition. … The dramatic decrease in the defect density in β-FeSi<inf>2</inf>, which was due to this growth mechanism, was confirmed by the photoluminescence properties. …

    Jpn. J. Appl. Phys. 55(6S2), 06HC02, 2016-05-20

    応用物理学会

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