検索結果 2115件中 1-20 を表示

  • Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition

    Agarwal Anchal , Gupta Chirag , Alhassan Abdullah , Mates Tom , Keller Stacia , Mishra Umesh

    … An improvement in the suppression of surface riding of magnesium from p-GaN:Mg into subsequent layers was achieved via low temperature flow modulation epitaxy. … In particular, the slope of the Mg concentration drop was reduced to 5 nm/dec for a growth temperature of 620 °C — … the lowest value ever reported for metalorganic chemical vapor deposition. …

    Appl. Phys. Express 10(11), 111002, 2017-10-20

    応用物理学会

  • Step Bunching Induced by Immobile Impurities in a Surface Diffusion Field

    Sato Masahide

    Journal of the Physical Society of Japan 86(11), 2017-10-13

    日本物理学会

  • Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

    Zhou Shengjun , Hu Hongpo , Liu Xingtong , Liu Mengling , Ding Xinghuo , Gui Chengqun , Liu Sheng , Guo L.

    … GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN nucleation layers by metal–organic chemical vapor deposition (MOCVD). …

    Jpn. J. Appl. Phys. 56(11), 111001, 2017-10-13

    応用物理学会

  • Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

    Furukawa Kiichi , Teramoto Akinobu , Kuroda Rihito , Suwa Tomoyuki , Hashimoto Keiichi , Sugawa Shigetoshi , Suzuki Daisuke , Chiba Yoichiro , Ishii Katsutoshi , Shimizu Akira , Hasebe Kazuhide

    … For the development of three-dimensional devices, selective epitaxial growth (SEG) technology has attracted much attention. … For the fabrication of a three-dimensional device structure, the selectivity of epitaxial growth must be accurately controlled not only on Si and SiO<inf>2</inf>, but also on different impurity-type silicon surfaces. … Both vapor phase epitaxy (VPE) and solid phase epitaxy (SPE) were performed on ion-implanted silicon-on-insulator (SOI) thin wafers. …

    Jpn. J. Appl. Phys. 56(10), 105503, 2017-09-19

    応用物理学会

  • Halide vapor phase epitaxy of thick GaN films on ScAlMgO

    Ohnishi Kazuki , Kanoh Masaya , Tanikawa Tomoyuki , Kuboya Shigeyuki , Mukai Takashi , Matsuoka Takashi

    … Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO<inf>4</inf>(SCAM) substrates, and their self-separation was achieved. … The 320-µm-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. …

    Appl. Phys. Express 10(10), 101001, 2017-09-07

    応用物理学会

  • 結晶形状に準拠した座標系による氷晶成長の2 次元数値シミュレーション

    川上 貴士 , 板野 稔久

    … Ice crystal growth by diffusion of water vapor from supercooled liquid water is simulated with equationswritten in a surface-following coordinate system. … Byintroducing the system, the growth of one branch of snow crystal is simulated smoothly in contrast to theprevious simulations adopting the ordinary rectangular coordinate system where it becomes bumpy. …

    防衛大学校 理工学研究報告 第55巻(第1号), 25-34, 2017-09

    機関リポジトリ

  • Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

    Fujikura Hajime , Konno Taichiro , Yoshida Takehiro , Horikiri Fumimasa

    … Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. … Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. … These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures. …

    Jpn. J. Appl. Phys. 56(8), 085503, 2017-07-21

    応用物理学会

  • Scanning tunneling microscopy/spectroscopy on MoS

    Mogi Hiroyuki , Kobayashi Yu , Taninaka Atsushi , Sakurada Ryuji , Takeuchi Takahiro , Yoshida Shoji , Takeuchi Osamu , Miyata Yasumitsu , Shigekawa Hidemi

    … MoS<inf>2</inf>embedded nanowires formed in a transition-metal dichalcogenide (TMDC) layered semiconductor of Mo<inf>1−</inf><inf>x</inf>W<inf>x</inf>S<inf>2</inf>alloy grown by chemical vapor deposition (CVD) on graphite were observed for the first time. …

    Jpn. J. Appl. Phys. 56(8S1), 08LB06, 2017-07-19

    応用物理学会

  • Growth of high-quality In

    Huynh Sa , Ha Minh , Do Huy , Nguyen Tuan , Yu Hung , Luc Quang , Chang Edward

    … The growth of high-quality In<inf>0.28</inf>Ga<inf>0.72</inf>Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. …

    Appl. Phys. Express 10(7), 075505, 2017-06-23

    応用物理学会

  • Stoichiometric control for heteroepitaxial growth of smooth ε-Ga

    Tahara Daisuke , Nishinaka Hiroyuki , Morimoto Shota , Yoshimoto Masahiro

    … Epitaxial ε-Ga<inf>2</inf>O<inf>3</inf>thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. … Cathodoluminescence measurements showed a deep-level emission ranging from 1.55–3.7 eV; …

    Jpn. J. Appl. Phys. 56(7), 078004, 2017-06-22

    応用物理学会

  • Synthesis of copper particles covered with cobalt-catalyzed carbon nanofibers and their application to air-curable conductive paste

    Ohnishi Shigekatsu , Nakasuga Akira , Nakagawa Kiyoharu

    … Cobalt nanoprecipitates (CoNPs) used as the catalyst for carbon fiber growth were arranged on the surface of an alloy particle by heat treatment. … CNFs were grown from the CoNPs on the alloy particle via thermal chemical vapor deposition (CVD). …

    Jpn. J. Appl. Phys. 56(7S2), 07KD03, 2017-06-22

    応用物理学会

  • Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

    Hoshi Takuya , Kashio Norihide , Sugiyama Hiroki , Yokoyama Haruki , Kurishima Kenji , Ida Minoru , Matsuzaki Hideaki

    … We report on a method for composition and doping control for metalorganic chemical vapor deposition of a double heterojunction bipolar transistor (DHBT) with a hybrid base structure consisting of a compositionally graded InGaAsSb for boosting an average electron velocity and a heavily doped thin GaAsSb for lowering the base contact resistivity. … The GaAsSb contact layer can be formed by simply turning off the supply of In precursor tetramethylindium (TMIn) after the growth of the composition and doping graded InGaAsSb base. …

    Jpn. J. Appl. Phys. 56(7), 075503, 2017-06-19

    応用物理学会

  • Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C

    Takai Shinnosuke , Lu Yi , Oda Osamu , Takeda Keigo , Kondo Hiroki , Ishikawa Kenji , Sekine Makoto , Hori Masaru

    … The InN films were deposited on GaN surfaces at a low temperature of 200 °C by radical-enhanced metal organic chemical vapor deposition (REMOCVD). … The REMOCVD system can provide N radicals from the plasma of a N<inf>2</inf>–H<inf>2</inf>mixture gas without using ammonia. … The growth mode was modeled as a step flow on the basis of surface morphology observation by atomic force microscopy. …

    Jpn. J. Appl. Phys. 56(6S2), 06HE08, 2017-05-26

    応用物理学会

  • Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Lu Yimin , Makihara Katsunori , Takeuchi Daichi , Ikeda Mitsuhisa , Ohta Akio , Miyazaki Seiichi

    … Hydrogenated microcrystalline (µc) Si/Ge heterostructures were prepared on quartz substrates by plasma-enhanced chemical vapor deposition (CVD) from VHF inductively coupled plasma of SiH<inf>4</inf>just after GeH<inf>4</inf>employing Ni nanodots (NDs) as seeds for crystalline nucleation. … The crystallinity of the films and the progress of grain growth were characterized by Raman scattering spectroscopy and atomic force microscopy (AFM), respectively. …

    Jpn. J. Appl. Phys. 56(6S1), 06GG07, 2017-05-10

    応用物理学会

  • Shape consistency of MoS

    Wang Lei , Chen Fei , Ji Xiaohong

    … In this study, MoS<inf>2</inf>flakes with the configuration of multilayer MoS<inf>2</inf>stacked on monolayer MoS<inf>2</inf>were synthesized by chemical vapor deposition (CVD). … The morphology of the MoS<inf>2</inf>flakes transformed from that of a truncated triangle to that of a fishbone-like shape with increasing growth temperature. …

    Appl. Phys. Express 10(6), 065201, 2017-05-10

    応用物理学会

  • Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels

    Shima Kohei , Sato Noboru , Funato Yuichi , Fukushima Yasuyuki , Momose Takeshi , Shimogaki Yukihiro

    … The effect of multiple film-forming species on the film quality during chemical vapor deposition (CVD) of SiC from CH<inf>3</inf>SiCl<inf>3</inf>/H<inf>2</inf>was examined by separating each species using high aspect-ratio (AR) parallel-plate microchannels. … The exceptionally high AR, which was typically more than [Formula: see text], allowed film growth with a variety of film-forming species that significantly changed with depth. …

    Jpn. J. Appl. Phys. 56(6S2), 06HE02, 2017-04-28

    応用物理学会

  • Nucleation site in CVD graphene growth investigated by radiation-mode optical microscopy

    Taira Takanobu , Obata Seiji , Saiki Koichiro

    … We investigate the graphene nucleation site in real space using radiation-mode optical microscopy (Rad-OM), which we have developed for the real-time observation of the graphene growth in chemical vapor deposition (CVD) conditions. … We found the bright spot in the Rad-OM image worked as a nucleation site through continuous observation of a Cu substrate from pretreatment to graphene growth. …

    Appl. Phys. Express 10(5), 055502, 2017-04-05

    応用物理学会

  • Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance

    Ren Bing , Liao Meiyong , Sumiya Masatomo , Wang Linjun , Koide Yasuo , Sang Liwen

    … Vertical Schottky barrier diodes (SBDs) were fabricated from the metal–organic chemical vapor deposition (MOCVD)-grown GaN epitaxial layer on free-standing GaN substrates. … It was found that the quality of GaN drift layers and SBD properties were strongly dependent on the growth rates. … 1.04), and high Schottky barrier height (∼0.97 eV) were achieved at a relatively low growth rate of 2.61 µm/h. …

    Appl. Phys. Express 10(5), 051001, 2017-03-31

    応用物理学会

  • Electrical properties of Ni/n-GaN Schottky diodes on freestanding m-plane GaN substrates

    Yamada Hisashi , Chonan Hiroshi , Takahashi Tokio , Shimizu Mitsuaki

    … The electrical properties of m-plane Ni/n-GaN Schottky diodes grown via metalorganic chemical vapor deposition were investigated. … Under growth at 1,120 °C with a V/III ratio of 1,000 (growth rate of 100 nm/min), the residual Si, O, and C impurity concentrations in the m-plane GaN layer were below the secondary-ion mass spectroscopy detection limit. …

    Appl. Phys. Express 10(4), 041001, 2017-02-28

    応用物理学会

  • Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    Yanase Shougo , Sasakura Hirotaka , Hara Shinjiro , Motohisa Junichi

    … We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. … InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. …

    Jpn. J. Appl. Phys. 56(4S), 04CP04, 2017-02-17

    応用物理学会

ページトップへ