検索結果 150件中 1-20 を表示

  • 放射化学的手法による太陽系形成初期の物質進化に関する研究

    海老原 充

    … Examples are described for rare earth elements (REEs), Zr, Hf, In and halogens (Br and I) in geochemical reference samples. … Either the cumulative olivine accommodated REEs from the light REE-depleted silicate melt or the light REEs were excluded from the olivine crystal to the olivine-metal boundary through diffusion.</p> …

    地球化学 51(3), 119-133, 2017

    J-STAGE

  • Analysis of Serum Cholesterol Efflux Capacity in a Minipig Model of Nonischemic Heart Failure

    Bigazzi Federico , Adorni Maria Pia , Puntoni Mariarita , Sbrana Francesco , Lionetti Vincenzo , Pino Beatrice Dal , Favari Elda , Recchia Fabio A. , Bernini Franco , Sampietro Tiziana

    … <p><b><i>Aim</i></b>: Circulating levels of high-density lipoprotein cholesterol (HDL-C) are decreased in patients with heart failure (HF). … We tested whether HDL-C serum levels are associated with cardiac contractile dysfunction in a minipig HF model.</p><p><b><i>Methods</i></b>: Blood samples were collected from 13 adult male minipigs: 1) before pacemaker implantation, 2) 10 days after surgery, and 3) 3 weeks after high-rate LV pacing. …

    Journal of Atherosclerosis and Thrombosis 24(8), 853-862, 2017

    J-STAGE

  • Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal–gate metal–insulator–semiconductor structures

    Tsai Jung-Ruey , Juan Pi-Chun , Lin Cheng-Li , Lin Guo-Cheng

    … It is found that Zr and Hf out-diffusion from high-k dielectric in samples with HIPIMS is lesser than those in samples with the conventional DC magnetron sputtering (DCMS). …

    Jpn. J. Appl. Phys. 56(1S), 01AD02, 2016-11-02

    応用物理学会

  • Room-temperature deposition of HfN

    Sato Masaru , Takeyama Mayumi , Noya Atsushi

    … We have demonstrated the preparation of a low-temperature-deposited HfN<inf>x</inf>film as a diffusion barrier applicable to the Cu-through-silicon-via. … The sputter deposition of the Hf film without substrate heating and the subsequent radical-assisted surface nitridation reaction successfully forms a thin film of Hf<inf>3</inf>N<inf>2</inf>in a single phase; …

    Jpn. J. Appl. Phys. 55(2S), 02BC21, 2016-01-25

    応用物理学会

  • Mass transfer in polycrystalline alumina under oxygen potential gradients at high temperatures

    KITAOKA Satoshi

    … The mass-transfer mechanisms of polycrystalline alumina with and without oxygen reactive elements (REs) such as Ln (Y and Lu) and Hf were investigated by evaluation of the oxygen permeability through alumina wafers, which served as a model for alumina scale, at accelerated temperatures up to 1923 K. … Oxygen permeation proceeded via grain boundary (GB) diffusion of oxygen from the higher oxygen partial pressure [P<sub>O2</sub>(hi)] surface side to the lower P<sub>O2</sub> …

    Journal of the Ceramic Society of Japan 124(10), 1100-1109, 2016

    J-STAGE

  • Analysis of Serum Cholesterol Efflux Capacity in a Minipig Model of Nonischemic Heart Failure

    Bigazzi Federico , Adorni Maria Pia , Puntoni Mariarita , Sbrana Francesco , Lionetti Vincenzo , Pino Beatrice Dal , Favari Elda , Recchia Fabio A. , Bernini Franco , Sampietro Tiziana

    … <p><b><i>Aim</i></b>: Circulating levels of high-density lipoprotein cholesterol (HDL-C) are decreased in patients with heart failure (HF). … We tested whether HDL-C serum levels are associated with cardiac contractile dysfunction in a minipig HF model.</p><p><b><i>Methods</i></b>: Blood samples were collected from 13 adult male minipigs: 1) before pacemaker implantation, 2) 10 days after surgery, and 3) 3 weeks after high-rate LV pacing. …

    Journal of Atherosclerosis and Thrombosis, 2016

    J-STAGE

  • Bias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy

    Nagata Takahiro , Yamashita Yoshiyuki , Yoshikawa Hideki , Imura Masataka , Oh Seungjun , Kobashi Kazuyoshi , Chikyow Toyohiro

    … A forward bias application, during switching from a high resistive state (HRS) to a low resistive state, reduced the Cu<inf>2</inf>O bonding state at the interface and the intensity ratio of Cu 2p<inf>3/2</inf>/Hf 3d<inf>5/2</inf>(Cu/Hf) by 23 ± … 5%, providing evidence of reductions in unintentionally formed Cu<inf>2</inf>O and Cu diffusion into the HfO<inf>2</inf>layer. …

    Jpn. J. Appl. Phys. 54(6S1), 06FG01, 2015-04-14

    応用物理学会

  • Short-Lived HF Molecules in Superionic Hydrogen Fluoride at Extreme Conditions

    Tsumuraya Kazuo , Ohde Yoshiyuki , Oshimi Tadaaki

    Journal of the Physical Society of Japan 84(2), 2015-01-13

    日本物理学会

  • 雰囲気制御 IH-FPP(AIH-FPP)を用いた Fe-Al 金属間化合物の形成とその応用

    亀山 雄高 , 竹嶋 隼人 , 小茂鳥 潤 [他] , 村澤 功基

    … It was assumed that deposition of aluminum particles and subsequent diffusion between aluminum deposit and substrate occurred during AIH-FPP process, forming the intermetallic layer. … Hot filament chemical vapor deposition (HF-CVD) successfully deposited thin film comprising diamond crystals on the AIH-FPP-treated steel substrate on which the intermetallic layer was formed. …

    日本金屬學會誌 79(9), 452-460, 2015

    J-STAGE

  • ZnO-Al<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>系ガラスの核生成に及ぼすHfO<sub>2</sub>の影響

    伊藤 雅人 , Panitpicha YAOWAKULPATTANA , 近藤 慎也 [他] , 湯村 尚史 , 角野 広平 , 若杉 隆

    … The low diffusion rate of Hf due to its heavier atomic weight than Ti and Zr would be a reason for the low nucleation ability of HfO<sub>2</sub>. …

    材料 64(6), 447-450, 2015

    J-STAGE

  • Analysis of hair follicle penetration of lidocaine and fluorescein isothiocyanate-dextran 4?kDa using hair follicle-plugging method

    堀田 大介 , 吉元 将人 , 藤堂 浩明 , 杉林 堅次

    … To investigate the contribution of hfs to drug permeation, we conducted skin permeation tests by controlling the hf contribution with a hf-plugging method. … Results: Skin permeabilities of ionized LC and FD-4 decreased with hf-plugging, whereas no change was observed for the skin permeation of unionized LC. … Permeation parameters of model drugs for both skin pathways were calculated utilizing Fick's second law of diffusion. …

    Drug development and industrial pharmacy 40(3), 345-351, 2014-03

    機関リポジトリ DOI

  • 内湾域の表層流が海上風より受ける影響の把握

    森谷 拓実 , 村上 和男

    … The transport and diffusion of drifter litters are affected by surface current dominantly. …

    土木学会論文集B2(海岸工学) 70(2), I_406-I_410, 2014

    J-STAGE

  • Refinement of Nanoporous Copper: A Summary of Micro-Alloying of Au-Group and Pt-Group Elements

    Dan Zhenhua , Qin Fengxiang , Hara Nobuyoshi

    … precursor alloys for 43.2 ks in 0.03 M HF solution, while NPC had a pore size of 39 nm after dealloying the amorphous Ti<sub>60</sub>Cu<sub>40</sub> …

    MATERIALS TRANSACTIONS 55(5), 796-800, 2014

    J-STAGE

  • Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer

    Yifan Zhou , Sihai Chen , Edmond Samson [他] , Bosseboeuf Alain

    … This paper reports an experimental investigation of deep isotropic etching in HF:HNO<inf>3</inf>:CH<inf>3</inf>COOH solution for the fabrication of large microcavities in a silicon wafer. … Experimental etched profiles are in agreement with the mathematical model of Kuiken's assuming a purely diffusion-controlled etching. …

    Jpn J Appl Phys 52(7), 076503-076503-7, 2013-07-25

    応用物理学会

  • Metal/High-k/Geゲートスタックにおけるジャーマナイド形成とその電気特性への影響 (シリコン材料・デバイス)

    細井 卓治 , 秀島 伊織 , 箕浦 佑也 [他] , 田中 亮平 , 吉越 章隆 , 寺岡 有殿 , 志村 考功 , 渡部 平司

    高性能Geデバイスの実現には,1nm以下のSiO_2換算膜厚(Equivalent Oxide Thickness: EOT)と良好な界面特性を両立するmetal/high-kゲートスタック技術の確立が不可欠である.high-k/Geゲートスタックの特性劣化の要因として,high-k膜形成や熱処理工程におけるGeO_x界面層の意図しない形成や分解,Ge原子のhigh-k膜中への拡散が指摘されている …

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113(87), 19-23, 2013-06-18

  • ベリリウム拡散加熱処理サファイア鑑別の現状

    江森 健太郎 , 北脇 裕士 , 岡野 誠

    … LA-ICP-MS分析においてBeが検出されるが,色の分布や他の検査において天然起源と判断されたサファイアについては,Be含有量の個体差が大きく,部位による濃度差も大きい.また,Beに伴ってブルー系ではニオブ(Nb),タンタル(Ta),トリウム(Th)等が,イエロー系ではジルコニウム(Zr),ハフニウム(Hf),タングステン(W)等が検出されることが多く,同様な事例が報告されている(Shen et al, 2009).<BR> …

    宝石学会(日本)講演会要旨 35(0), 4, 2013

    J-STAGE

  • XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)

    Ohta Akio , Murakami Hideki , Higashi Seiichiro , Miyazaki Seiichi

    … We have studied the chemical bonding features and electronic states of ultrathin Hf-La oxide using high-resolution x-ray photoelectron spectroscopy (XPS). … 6 nm-thick Hf-La oxides with different La/(Hf+La) content were prepared on wet-chemical cleaned p-type Si(100) and Pt layer by thermal decomposition of Hf(DPM: dipivaloymcthanato)<sub>4</sub> …

    Transactions of the Materials Research Society of Japan 38(3), 353-357, 2013

    J-STAGE

  • S053073 マイクロセンサを用いた壁面せん断応力の計測に関する研究

    沢田 拓也 , 寺島 修 , 酒井 康彦 , 長田 孝二 , 肥田 博隆 , 式田 光宏

    … One of the sensors is a thermal type sensor which is based on the quantity of heat diffusion from thin hot film (hereafter called "HF sensor"). … The result of HF sensor calibration shows that the sensor output increases with wall shear stress. …

    年次大会 : Mechanical Engineering Congress, Japan 2012, "S053073-1"-"S053073-5", 2012-09-09

  • TiN電極中の酸素に起因したHf系 High-k ゲート絶縁膜の特性劣化

    細井 卓治 , 大嶽 祐輝 , 有村 拓晃 [他] , 力石 薫介 , 北野 尚武 , 志村 考功 , 渡部 平司

    … metal/high-kスタックの課題として,実効仕事関数の制御とEOTスケーリングが挙げられる.TiN/Hf系high-kゲートスタックでは,高温熱処理による界面SiO_2層の増膜に加えて,HfやSiといった元素がTiN電極中に拡散し,high-k膜が低誘電率化することが知られている.一方で,poly-Siキャップ層を有するMIPS構造ではHf拡散が見られないなど,その拡散メカニズムは未だ明らかとなっていない.本研究では,TiN …

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 112(92), 43-46, 2012-06-14

    参考文献12件

  • Characterization of Interfaces between HfO₂ Thin Film and Metal Electrode with Pre-Post Treatments

    Kim Young-Nam

    … The O2 plasma and O3 feeding treatments produce Hf--Hf bonds in the bulk HfO2 film and a Ti oxide layer at the film/bottom electrode and HfO2/TiN interface, which prevent the out diffusion of nitrogen into the HfO2 layer. …

    Jpn J Appl Phys 51(4), 045701-045701-5, 2012-04-25

    応用物理学会

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