CiNii Search - Impurity

1

Change of the ground state upon hole doping unveiled by Ni impurity in high-Tc cuprates

Tanabe Yoichi , Suzuki Kensuke , Adachi Tadashi [他]

Journal of the Physical Society of Japan 79(2), 023706-1〜4, 2010/2
2

Effects of Ru doping on the transport behavior and superconducting transition temperature of NdFeAsO0.89F0.11

Lee Sang Chul , Satomi Erika , Kobayashi Yoshiaki [他]

Journal of the Physical Society of Japan 79(2), 023702-1〜4, 2010/2
3

High-precision evaluation of ultra-shallow impurity distributions by secondary ion mass spectrometry [in Japanese]

多田陽子 , 鈴木邦広 , 片岡祐治

Fujitsu 61(1), (356) 2〜7, 2010/1
4

Properties of impurities in semiconductors [in Japanese]

内田建

応用物理 79(1), 70〜73, 2010/1
5

Studies on effects of impurity doping and NMR measurements of La 1111 and/or Nd 1111 Fe-pnictide superconductors

Sato Masatoshi , Kobayashi Yoshiaki , Lee Sang Chul [他]

Journal of the Physical Society of Japan 79(1), 014710-1〜10, 2010/1
6

Effects of trace impurities in hydrogen environment on tribological properties of steels [in Japanese]

福田応夫 , 橋本正明 , 杉村丈一

Journal of Japanese Society of Tribologists 55(1), 53〜61, 2010
7

Improvement of Ron under AC Operation of Floating Island and Thick Bottom Oxide Trench Gate MOSFET (FITMOS)

Takaya Hidefumi , Miyagi Kyosuke , Hamada Kimimori

… This paper clarified the influence of the passive hole gate diffusion layer shape and the impurity concentration to BVdss and AC operation. …

IEEJ Transactions on Industry Applications 130(2), 144-149, 2010

CrossRef J-STAGE
8

A Proposal of High Performance Organic Thin Film Transistors

Ishikawa Yoshinori , Wada Yasuo , Toyabe Toru , Tsutsui Ken

… It is made clear that the device performances improve more than twice to three hundred times by inserting high impurity concentration region under the source drain contact area. …

IEEJ Transactions on Fundamentals and Materials 130(2), 161-166, 2010

CrossRef J-STAGE
9

Πορνεια and Pauline community's holiness: a case of 1 Corinthians 5-7 [in Japanese]

村山盛葦

基督教研究 71(2), 1〜18, 2009/12
10

Plasma-induced defect-site generation in si substrate and its impact on performance degradation in scaled MOSFETs

Eriguchi Koji , Nakakubo Yoshinori , Matsuda Asahiko , Takao Yoshinori , Ono Kouichi , 江利口浩二

… This results in a change of the effective impurity-doping density and the profile. …

IEEE Electron Device Letters 30(12), 1275-1277, 2009-12

CrossRef IR
11

Preparation of Eu-doped β- and 15R-SiAlONs by ammonia nitridation of the precursor obtained using aluminum glycine gel

Masubuchi Yuji , Yoshikawa Mitsue , Takeda Takashi , Kikkawa Shinichi

… A mixture of Eu-doped 15R-SiAlON with α-Al2O3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO3)_[3]·9H2O in a 2/1 atomic ratio as the aluminum source. …

Journal of Alloys and Compounds 487(1-2), 409-412, 2009-11-13

CrossRef IR
12

Renormalization of commensurate magnetic peak in Ni-doped La1.85Sr0.15CuO4

Matsuura Masato , Kofu Maiko , Kimura Hiroyuki [他]

Journal of the Physical Society of Japan 78(11), 114703-1〜6, 2009/11
13

Analysis of Resonance Charge Transfer Neutralization on the Basis of Heisenberg Equations of Motion(Condensed Matter Physics)

KONDO Shin-ichiro , YAMADA Kosaku

… We show the derivation of equations and various numerical calculation results, including the case where an impurity potential is introduced into the nonperturbative Hamiltonian. …

Progress of theoretical physics 122(3), 713-734, 20090925

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14

Crystal Plasticity Analysis of Dislocation Accumulation in Impurity Doped-ULSI Cells [in Japanese]

SATO Michihiro , OHASHI Tetsuya , MARUIZUMI Takuya , KITAGAWA Isao

… On the other hand, impurity doping is an indispensable process for the device fabrication, and also important in dislocation accumulation. … Possibilities for the control of dislocation accumulation in impurity doped-ULSI cells are discussed. …

Transactions of the Japan Society of Mechanical Engineers. A 75(756), 1057-1062, 20090825

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15

27aYH-2 Retardation of the growth velocity on the two-dimensional diffusion limited aggregation due to the excluded volume effect of the antifreeze glycoprotein II : Competition between the growth of DLA-duster and the increase of the impurity-coverage [in Japanese]

Sohara Takahumi , Akutsu Noriko , Takei Masato

Meeting abstracts of the Physical Society of Japan 64(2-4), 836, 20090818

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16

26pPSB-53 Magnetic impurity effect with quantum conduction of Au and other metal by the method of break-junction [in Japanese]

Nakao T. , Ienaga K. , Inagaki Y. , Kawae T. , Tsujii H.

Meeting abstracts of the Physical Society of Japan 64(2-4), 831, 20090818

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17

26pYC-13 Excitons and optical response in semiconducting CNs with impurity [in Japanese]

Tomio Y. , Suzuura H.

Meeting abstracts of the Physical Society of Japan 64(2-4), 760, 20090818

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18

26aYE-1 Impurity and phonon scattering effects on transport properties of nanocarbon materials [in Japanese]

Ishii H. , Roche Stephan , Kobayashi N. , Hirose K.

Meeting abstracts of the Physical Society of Japan 64(2-4), 750, 20090818

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19

28pRH-7 Effect of impurity doping on Fe site of LaFePO [in Japanese]

Suzuki S. , Miyasaka S. , Tajima S.

Meeting abstracts of the Physical Society of Japan 64(2-3), 569, 20090818

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20

28aRG-5 Synthesis of high-quality samples of impurity-doped Iron-silicide superconductor Lu_2Fe_3Si_5 [in Japanese]

Hidaka H. , Nakajima Y. , Tamegai T.

Meeting abstracts of the Physical Society of Japan 64(2-3), 557, 20090818

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