Wang Ronghua
,
Li Guowang
,
Karbasian Golnaz
,
Guo Jia
,
Faria Faiza
,
Hu Zongyang
,
Yue Yuanzheng
,
Verma Jai
,
Laboutin Oleg
,
Cao Yu
,
Johnson Wayne
,
Snider Gregory
,
Fay Patrick
,
Jena Debdeep
,
Xing Huili (Grace)
… A device with a 50-nm-long T-shaped gate shows a maximum output current density of 2.0 A/mm, a peak extrinsic DC transconductance of 690 mS/mm, and cut-off frequencies f_{\text{T}}/f_{\text{max}} of 260/220 GHz at the same bias, representing a record high \sqrt{f_{\text{T}}\cdot f_{\text{max}}} of 239 GHz for InGaN channel HEMTs. …
Applied Physics Express 6(1), 016503-016503-3, 2013-01-25
The Japan Society of Applied Physics