検索結果:　 2274件中 1-20 を表示

Hoshi Yusuke , Sawano Kentarou , Yamada Atsunori [他] , Nagakura So , Usami Noritaka , Arimoto Keisuke , Nakagawa Kiyokazu , Shiraki Yasuhiro

… We investigated the line width dependence of anisotropic strain states in SiGe layers grown on selectively ion-implanted Si substrates with stripe patterns. … It was found that strain relaxation of the SiGe layers on the unimplanted region occurred only along the stripe pattern and that the increase in the ion-implanted region provided larger anisotropy of the strain state. …

Applied Physics Express 4(9), 095701-095701-3, 2011-09-25

応用物理学会

Zhang Wei , Wang Huaiyu , Oyane Ayako , Tsurushima Hideo , Chu Paul K. , 鶴嶋 英夫

… In this work, nitrogen-containing functional groups were generated on a polymer surface by N2 plasma immersion ion implantation (PIII). …

Bio-medical materials and engineering 21(2), 75-82, 2011-06

機関リポジトリ CrossRef

Veloso Anabela , Keersgieter An De , Brus Stephan [他] , Horiguchi Naoto , Absil Philippe P. , Hoffmann Thomas

… In this work we explore several doping schemes for aggressively scaled multi-gate field-effect transistor devices with the conduction channels wrapped around silicon fins (FinFETs) ($H_{\text{Fin}}\sim 37$ nm, $W_{\text{Fin}}\geq 10$ nm, $L_{\text{g}}\geq 30$ nm), using conventional ion implantation (I/I), and suitable for both logic and dense circuit applications. …

Jpn J Appl Phys 50(4), 04DC16-04DC16-6, 2011-04-25

応用物理学会

Mizuno Tomohisa , Hasegawa Mitsuo , Ikeda Keiji [他] , Nojiri Masashi , Horikawa Tsuyoshi

… We have experimentally studied an abrupt lateral-relaxed/strained layer heterojunction for ballistic complementary metal oxide semiconductor (CMOS) transistors, which is fabricated by a local O+ ion-induced relaxation technique for strained semiconductors on a buried oxide layer. …

Jpn J Appl Phys 50(4), 04DC02-04DC02-7, 2011-04-25

応用物理学会

Hori Masahiro , Shinada Takahiro , Taira Keigo , Komatsubara Akira , Ono Yukinori , Tanii Takashi , Endoh Tetsuo , Ohdomari Iwao

… A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. … The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. … This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number. …

Applied physics express 4(4), 046501-046501-2, 2011-04-25

応用物理学会 参考文献15件

Byun Young Tae , Jhon Young-Min , Kim Sun Ho

… Investigation of implantation-enhanced quantum-well intermixing has been described in a lattice-matched InGaAs/InGaAsP multiple quantum well p--i--n heterostructure. …

Jpn J Appl Phys 50(3), 030202-030202-3, 2011-03-25

応用物理学会

今屋 浩志 , 岡村 圭 , 中野 信夫 , 長嶋 珍男 , 鈴木 嘉昭 , 高橋 勝緒

電気化学および工業物理化学 : denki kagaku 79(3), 140-145, 2011-03-05

参考文献8件

品田 賢宏 , 堀 匡寛 , 平 圭吾 , 小松原 彰 , 谷井 孝至 , 大泊 巌 , 小野 行徳 , 遠藤 哲郎

電気学会研究会資料. EDD, 電子デバイス研究会 2011(35), 1-4, 2011-03-01

参考文献18件

Kinoshita Ryosuke , Sakamoto Isao , Hayashi Nobuyuki [他] , Nomura Kiyoshi , Honda Shigeo , Ishida Tomoya , Iio Satoshi , Tashiro Hiroyuki , Toriyama Tamotsu

… Au ion implantation in Fe ion-implanted Al2O3 (Fe/Al2O3) has been performed in order to tailor the structural, magnetic and optical properties of Fe granules in Al2O3 matrix. … After Au ion implantation, Rutherford backscattering (RBS) measurements indicate the decrease and the redistribution of retained Fe atoms with the inclusion of Au atoms, and the patterns of X-ray diffraction (XRD) show the formation of Au granules in the Fe/Al2O3. …

Jpn J Appl Phys 50(1), 01BE01-01BE01-3, 2011-01-25

応用物理学会