CiNii Articles - PIN diode

1

Design of Optical Components for a Light Emitting Diode Zoom Illumination System

TSAI Yen-Pin , HUNG Chinghua

Optical review 18(2), 224-230, 2011-04-01

References (7)
2

Operating Performance of Parallel-Connected pin Diodes Using a Physics-Based Device Model : Reverse-Recovery Analysis Considering Carrier Dynamics [in Japanese]

SUGIMOTO Takayuki , TOMINAGA Shinji , URUSHIBATA Hiroaki , FUJITA Hideaki , AKAGI Hirofumi , HORIGUCHI Takeshi , KINOUCHI Shin-ichi , OI Takeshi

電気学会研究会資料. SPC, 半導体電力変換研究会 2011(1), 97-102, 2011-01-21

References (12)
3

Design of a multiband planar antenna for polarization switching with PIN diodes [in Japanese]

山浦健太 , 木村雄一 , 羽石操

IEICE technical report 111(128), 115-119, 2011-07-13
4

Light Signal Sending and Receiving Using Si Light-emitting Diode

Kawakami Yohei , Okamoto Kensho

… It has been thought that silicon (Si) is a material inapplicable to active optical devices, such as light-emitting diode (LED), because of its indirect electronic band structure. …

IEEJ Transactions on Electronics, Information and Systems 131(11), 1838-1842, 2011

J-STAGE CrossRef
5

A Parameters Extraction Procedure Based on Integrated Evaluation of Static and Dynamic Characteristics : —Application to a pin Diode Model—

Toyama Takashi , Tominaga Shinji , Urushibata Hiroaki , Fujita Hideaki , Akagi Hirofumi , Kinouchi Shinichi , Oi Takeshi

… Validation with the simulation results of parameters optimization for a pin diode model demonstrates that the proposed procedure has high accuracy and low computation cost. …

IEEJ Transactions on Industry Applications 131(7), 864-872, 2011

J-STAGE CrossRef
6

Monolithic Integration of Silicon Variable Optical Attenuators Based on PIN Carrier-Injection Structure and a Silica-Based Arrayed Waveguide Grating Filter [in Japanese]

NISHI Hidetaka , TSUCHIZAWA Tai , WATANABE Toshifumi , SHINOJIMA Hiroyuki , KOU Rai , PARK Sungbong , YAMADA Koji , ITABASHI Sei-ichi

… Si細線光導波路にPINダイオード構造を付与したキャリア注入型可変光減衰器(Si-VOA)と,比屈折率差(Δ)が3%の石英系光導波路によるAWGを,スポットサイズ変換器を介して接続し,さらにそれらをモノリシック集積したデバイスについて報告する.ECRプラズマCVD法を用いることで,低温での石英系光導波路の作製を実現し,作製した集積デバイスが入力光を200GHz間隔で16チャネルに分波し,さらにSi-VOAの各チャネルにおいて50MHzの3dB減衰 …

Technical report of IEICE. OPE 110(352), 61-64, 2010-12-10

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7

A Consideration on the Operating Model of Bipolar Transistors [in Japanese]

TAKATA Ikunori

電気学会研究会資料. EDD, 電子デバイス研究会 2010(99), 63-68, 2010-11-29

References (9)
8

Acivation behaviour for doped Si films after laser or furnace annealing(Session 6A : TFTs and Sensors)

NOGUCHI Takashi , SUZUKI Toshiharu

… ELA activation subsequently after heavily ion implantation is more effective than FA and is expected to source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode and for solar cell as a System on Panel (SoP) application. …

Technical report of IEICE. SDM 110(110), 149-153, 2010-06-23

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9

Acivation behaviour for doped Si films after laser or furnace annealing(Session 6A : TFTs and Sensors)

NOGUCHI Takashi , SUZUKI Toshiharu

… ELA activation subsequently after heavily ion implantation is more effective than FA and is expected to source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode and for solar cell as a System on Panel (SoP) application. …

IEICE technical report. Electron devices 110(109), 149-153, 2010-06-23

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10

Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

Cheng-Yu Hu , Hiroyuki Nokubo , Masanari Okada , Jin-Ping Ao , Yasuo Ohno

… From $C$–$V$ scan at 150 °C, a high density of SiO2/GaN interface traps was found to pin the semiconductor surface potential ($\varPhi_{\text{S}}$) at 0.7–0.9 eV. …

Jpn J Appl Phys 49(4), 04DF11-04DF11-3, 2010-04-25

The Japan Society of Applied Physics
11

A Reflectarray Antenna for Millimeter-wave Imaging [in Japanese]

KAMODA Hirokazu , IWASAKI Toru , TSUMOCHI Jun , KUKI Takao

… 用の電子走査アンテナとして,GOGHz帯リフレクトアレーアンテナを試作・評価した.リフレクトアレーの反射素子は,誘電体基板上に形成されたマイクロストリップパッチと1個のPINダイオードを装荷したスタブによって構成する.PINダイオードのON/OFFで反射位相が159°変化し,簡単な構造の1ビットディジタル移相器として動作した.この反射素子を0.7λ間隔で40×40個配列して,リフレクトアレーアンテナを試作 …

IEICE technical report. Antennas and propagation 109(454), 85-90, 2010-03-01

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12

A Parameter-Extraction Procedure Based on Integrated Evaluation of Static and Dynamic Characteristics : Its Application to a pin Diode Model [in Japanese]

TOYAMA Takashi , TOMINAGA Shinji , URUSHIBATA Hiroaki , FUJITA Hideaki , AKAGI Hirofumi , KINOUCHI Shinichi , OI Takeshi

電気学会研究会資料. SPC, 半導体電力変換研究会 2010(1), 89-94, 2010-01-29

References (7) Cited by (1)
13

Photo-darlington for Visible Light ID Using Standard CMOS Process [in Japanese]

KIMURA Yohsuke , MATSUMOTO Yoshinori

… The response sensitivities of photo-darlington was 9times higher than that of typical PIN photo-diode, and the response frequency was 110kHz. …

IEEJ Transactions on Sensors and Micromachines 129(12), 473-474, 2009-12-01

J-STAGE CrossRef References (4) Cited by (1)
14

Ultra-Small Laser Scanning Module with High Accuracy Alignment [in Japanese]

YOSHIHARA Shinji , OHARA Junji , ABE Katsunori , TAKEUCHI Yukihiro , KAWAHARA Nobuaki

… This laser scanning module consists of silicon substrate, a laser diode array with multi-emitter, and microprisms. … The microprisms and alignment pins for laser diode array are fabricated on the same silicon substrate using MEMS technology. … Then the laser diode array is attached to the silicon substrate by setting with the alignment pins. … The alignment accuracy was ±2.8μm for the interval between the laser diode array and microprisms. …

IEEJ Transactions on Sensors and Micromachines 129(12), 433-438, 2009-12-01

J-STAGE CrossRef References (6)
15

Milestones along the IGBT development through the last 25 years (1984-2009) [in Japanese]

TOKURA Norihito

電気学会研究会資料. EFM, 電子材料研究会 2009(16), 67-74, 2009-10-29

References (59) Cited by (1)
16

A Simple Emulation of IGBT's Forward Action by a Partial pin Diode [in Japanese]

TAKATA Ikunori

電気学会研究会資料. EFM, 電子材料研究会 2009(16), 49-54, 2009-10-29

References (5) Cited by (2)
17

High-switching frequency power converter with high-voltage SiC-PiN diodes and hard-driving of IEGTs [in Japanese]

TAKAO Kazuto , TANAKA Yasunori , SUNG Kyungmin , WADA Keiji , NAKAZAWA Yosuke , SHINOHE Takashi , KANAI Takeo , OHASHI Hiromichi

電気学会研究会資料. EFM, 電子材料研究会 2009(16), 27-32, 2009-10-29

References (7)
18

Experimental Results of Switching Characteristic of Si-IEGTs and SiC-PiN Diodes Pair Connected in Series [in Japanese]

SUNG Kyungmin , AKIYAMA Hironobu , TAKAO Kazuto , KANAI Takeo , TANAKA Yasunori , OHASHI Hiromichi

電気学会研究会資料. EFM, 電子材料研究会 2009(16), 23-26, 2009-10-29

References (6)
19

Thermal Analysis for Hybrid Pair Module of Si-IEGT and SiC-PiN Diode [in Japanese]

KOYAMA Jumpei , WADA Keiji , TAKAO Kazuto , KANAI Takeo , OHASHI Hiromichi

電気学会研究会資料. EFM, 電子材料研究会 2009(16), 17-22, 2009-10-29

References (10)
20

The development of 25Gbps pin-PD for 100Gbps Ethernet [in Japanese]

TAKEMURA Ryota , NAKAJI Masaharu , SAKUMA Hitoshi , WATATANI Chikara , NAGIRA Takashi , SUZUKI Daisuke , AOYAGI Toshitaka , ISHIKAWA Takahide

… 我々は、100Gビットイーサネット用受光素子として、大受光径を有し、広帯域・高感度を兼ね備えた表面入射型pin-PDを開発した。 …

Technical report of IEICE. LQE 109(245), 197-200, 2009-10-15

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