検索結果 477件中 1-20 を表示

  • Metastable crystal growth of acetaminophen using solution-mediated phase transformation

    Mori Yoichiro , Maruyama Mihoko , Takahashi Yoshinori , Yoshikawa Hiroshi , Okada Shino , Adachi Hiroaki , Sugiyama Shigeru , Takano Kazufumi , Murakami Satoshi , Matsumura Hiroyoshi , Inoue Tsuyoshi , Yoshimura Masashi , Mori Yusuke

    … We report a new method of obtaining the metastable phase form II crystals of acetaminophen. … Solution-mediated phase transformation (SMPT) from trihydrate into form II is utilized to obtain form II crystals. … SMPT is triggered by seeding form II crystals into a saturated solution including trihydrate crystals, which are less stable than form II crystals. …

    Appl. Phys. Express 10(1), 015501, 2016-12-13

    応用物理学会

  • Habit control during growth on GaN point seed crystals by Na-flux method

    Honjo Masatomo , Imanishi Masayuki , Imabayashi Hiroki , Nakamura Kosuke , Murakami Kosuke , Matsuo Daisuke , Maruyama Mihoko , Imade Mamoru , Yoshimura Masashi , Mori Yusuke

    … The formation of the pyramidal habit is one of the requirements for the dramatic reduction of dislocations during growth on a tiny GaN seed called a “point seed”. …

    Jpn. J. Appl. Phys. 56(1S), 01AD01, 2016-11-02

    応用物理学会

  • Electrically active light-element complexes in silicon crystals grown by cast method

    Sato Kuniyuki , Ogura Atsushi , Ono Haruhiko

    … Electrically active light-element complexes called thermal donors and shallow thermal donors in silicon crystals grown by the cast method were studied by low-temperature far-infrared absorption spectroscopy. … The relationship between these complexes and either crystal defects or light-element impurities was investigated by comparing different types of silicon crystals, that is, conventional cast-grown multicrystalline Si, seed-cast monolike-Si, and Czochralski-grown Si. …

    Jpn. J. Appl. Phys. 55(9), 095502, 2016-08-01

    応用物理学会

  • Fabrication of high-quality [Formula: see text] GaN substrates using the Na flux method

    Maruyama Mihoko , Nakamura Koshi , Che Songbek , Murakami Kosuke , Takazawa Hideo , Imanishi Masayuki , Imade Mamoru , Morita Yukihiro , Mori Yusuke

    … The GaN crystals are grown at low supersaturation using the Na flux method with the dipping technique. … The crystallinity of the grown GaN crystals is improved compared to that of the seed substrates. …

    Appl. Phys. Express 9(5), 055501, 2016-03-31

    応用物理学会

  • Effect of seeds and sintering additives on (K,Na,Li)NbO3 lead-free single crystals grown by a solid-state crystal growth method

    YANG Jie , FU Zhengqian , YANG Qunbao , LI Yongxiang , LIU Yun

    … A solid-state crystal growth (SSCG) method has been utilized to prepare (K0.45Na0.55)0.94Li0.06NbO3 (KNLN) lead-free piezoelectric single crystals. … It was found that 〈100〉-oriented SrTiO3 seed was inappropriate for growing KNLN single crystal, while 〈100〉-oriented KTaO3 one could act as a good seed. … The inverse pole figure (IPF) showed that the epitaxial layer was indeed single crystal and oriented in the same 〈100〉 direction as the seed. …

    Journal of the Ceramic Society of Japan 124(4), 365-369, 2016

    J-STAGE DOI

  • Effect of Feed Location on Particle Size Distribution in Production of Crystals in a Classified Bed Crystallizer

    MASAOKA Koji , YOSHIKAWA Naohito , HASEGAWA Masami [他] , Misumi Ryuta , Nishi Kazuhiko , Kaminoyama Meguru

    … From the results of the investigations, it was concluded that a feed positioned inside the slurry phase of the crystallizer affects the crystal growth and agglomeration phenomena, though the knowledge about phenomena of fine crystals is inadequate. … Positioning the feed within the slurry phase increases the crystal growth rate slightly at the bottom of the slurry phase, as well as the agglomeration of the seed crystals, by increasing the degree of supersaturation at the inlet to the crystallizer. …

    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 49(1), 42-47, 2016

    J-STAGE DOI

  • Homoepitaxial growth of a-plane GaN layers by reaction between Ga

    Sumi Tomoaki , Taniyama Yuuki , Takatsu Hiroaki , Juta Masami , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    … Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. … These results suggest that growth of a-GaN layers using Ga<inf>2</inf>O vapor and NH<inf>3</inf>gas at a high temperature enables the generation of high-quality crystals. …

    Jpn. J. Appl. Phys. 54(6), 065501, 2015-04-30

    応用物理学会

  • MFI Zeolite Membranes Prepared on Novel Silica Substrates

    SUGIYAMA Yuto , IKARUGI Syusuke , OURA Kotone [他] , Ikeda Ayumi , Matsuyama Emi , Ono Ryuhei , Nomura Mikihiro , Tawarayama Hiromasa , Saito Takahiro , Kuwahara Kazuya

    … Procedures for coating of MFI seed crystals were important due to the ζ-potential between the substrates and the seed crystals. … Dense MFI membranes were obtained from the seed slurry of pH 2, because the both isoelectric pH of the silica substrates and the MFI seeds are almost the same at 2. …

    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 48(11), 891-896, 2015

    J-STAGE DOI

  • β型Ti-15Mo-5Zr-3Al合金単結晶を用いた低ヤング率ボーンプレートの開発

    當代 光陽 , 萩原 幸司 , 石本 卓也 [他] , 山本 憲吾 , 中野 貴由

    … Single crystals of the Ti-15Mo-5Zr-3Al alloy along [001] direction were succeeded to be grown by using the seed crystal in order to develop the long bone plate along the [001] direction with the lowest Young's modulus. … The ω phase with relatively high Young's modulus was not confirmed to precipitate in the single crystals at room temperature. … Using the oriented single crystals, bone plate with dimensions of 42 × 5 × 1.5 mm<sup>3</sup> …

    鉄と鋼 101(9), 501-505, 2015

    J-STAGE DOI

  • Shape and quality of Si single bulk crystals grown inside Si melts using the noncontact crucible method

    Nakajima Kazuo , Murai Ryota , Ono Satoshi , Morishita Kohei , Kivambe Maulid , Powell Douglas , Buonassisi Tonio

    … The noncontact crucible method enables production of Si bulk single crystals without crucible contact by intentionally establishing a distinct low-temperature region in the Si melt. … The oxygen concentration was concentrically distributed on the seed axis owing to the convex growing interface. …

    Jpn. J. Appl. Phys. 54(1), 015504, 2014-12-18

    応用物理学会

  • 昇華法によるAlN単結晶の育成(窒化物半導体光・電子デバイス,材料,関連技術,及び一般)

    岩崎 洋介 , 永田 俊郎 , 秋山 秋山 [他] , 中村 啓一郎

    窒化アルミニウム(AlN)は、高い熱伝導率と深紫外領域で優れた透明性を有し、発光層とのマッチングの良さから、深紫外発光ダイオード(DUV-LED)用基板としての優位性が約束されている材料である。本研究では、昇華法により育成したAlN単結晶の深紫外領域における高い透明性を示すと共に、結晶品質へ及ぼすr面とc面という育成方位の違いの影響と合わせて報告する。

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス 114(338), 1-4, 2014-11-20

    CiNii PDF - 定額アクセス可能 

  • 昇華法によるAlN単結晶の育成(窒化物半導体光・電子デバイス,材料,関連技術,及び一般)

    岩崎 洋介 , 永田 俊郎 , 秋山 秋山 [他] , 中村 啓一郎

    窒化アルミニウム(AlN)は、高い熱伝導率と深紫外領域で優れた透明性を有し、発光層とのマッチングの良さから、深紫外発光ダイオード(DUV-LED)用基板としての優位性が約束されている材料である。本研究では、昇華法により育成したAlN単結晶の深紫外領域における高い透明性を示すと共に、結晶品質へ及ぼすr面とc面という育成方位の違いの影響と合わせて報告する。

    電子情報通信学会技術研究報告. ED, 電子デバイス 114(336), 1-4, 2014-11-20

    CiNii PDF - 定額アクセス可能 

  • 昇華法によるAlN単結晶の育成(窒化物半導体光・電子デバイス,材料,関連技術,及び一般)

    岩崎 洋介 , 永田 俊郎 , 秋山 秋山 [他] , 中村 啓一郎

    窒化アルミニウム(AlN)は、高い熱伝導率と深紫外領域で優れた透明性を有し、発光層とのマッチングの良さから、深紫外発光ダイオード(DUV-LED)用基板としての優位性が約束されている材料である。本研究では、昇華法により育成したAlN単結晶の深紫外領域における高い透明性を示すと共に、結晶品質へ及ぼすr面とc面という育成方位の違いの影響と合わせて報告する。

    電子情報通信学会技術研究報告. CPM, 電子部品・材料 114(337), 1-4, 2014-11-20

    CiNii PDF - 定額アクセス可能 

  • 衝撃圧縮によるシード結晶を含むBi系超伝導体のマイクロ/ナノウィスカーの評価

    正田 貴弘 , 富岡 成矢 , 中村 悟士 [他]

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編] 31, 1-4, 2014-10-20

  • High nitrogen pressure solution growth of GaN

    Bockowski Michal

    … A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. … The use of two kinds of seeds: free-standing hydride vapor phase epitaxy GaN (HVPE-GaN) obtained from metal organic chemical vapor deposition (MOCVD)-GaN/sapphire templates and free-standing HVPE-GaN obtained from the ammonothermally grown GaN crystals, is shown. … The role and influence of impurities, like oxygen and magnesium, on GaN crystals grown from gallium solution in the MFS configuration is presented. …

    Jpn. J. Appl. Phys. 53(10), 100203, 2014-09-08

    応用物理学会

  • 525 冷熱蓄熱のための包接水和物の結晶形態変化の光学的観察(熱工学II)

    米本 幸雄 , 大徳 忠史 , 鶴田 俊

    日本機械学会東北支部秋季講演会講演論文集 2014(50), 127-128, 2014-09-05

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  • Vertical Bridgman growth of sapphire crystals, with thin-neck formation process

    Hoshikawa K , Taishi T , Ohba E , Miyagawa C , Kobayashi T , Yanagisawa J , Shinozuka M

    … A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. … Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown. …

    JOURNAL OF CRYSTAL GROWTH 401, 146-149, 2014-09-01

    機関リポジトリ DOI

  • Vertical Bridgman growth of sapphire-Seed crystal shapes and seeding characteristics

    Hoshikawa K , Osada J , Saitou Y , Ohba E , Miyagawa C , Kobayashi T , Yanagisawa J , Shinozuka M , Kanno K

    … The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various shapes of seed crystals and tungsten (W) crucibles shaped to match the seeds. … diameter, c-axis sapphire single crystals were reproducibly grown from three kinds of seed: thin, tapered and full diameter. …

    JOURNAL OF CRYSTAL GROWTH 395, 80-89, 2014-06-01

    機関リポジトリ DOI

  • Growth of bulk GaN crystals by the Na-flux point seed technique

    Imade Mamoru , Maruyama Mihoko , Yoshimura Masashi , Mori Yusuke

    Jpn. J. Appl. Phys. 53(5S1), 05FA06, 2014-04-15

    応用物理学会

  • 微結晶の付着現象を伴う結晶成長機構に関する検討

    正岡 功士 , 三角 隆太 , 仁志 和彦 , 上ノ山 周

    結晶表面に母液中の懸濁微結晶が付着する現象を利用して見かけの結晶成長速度を向上させる現象について,微結晶の粒径が見かけの結晶成長速度に与える影響を検討した.過冷却度1~30 K,母液中の微結晶数2×10<sup>4</sup>~7×10<sup>5</sup> kg-solution<sup>-1</sup>の条件において晶析 …

    日本海水学会誌 68(4), 251-257, 2014

    J-STAGE DOI

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