Search Results 1-20 of 472

  • Fabrication of high-quality [Formula: see text] GaN substrates using the Na flux method

    Maruyama Mihoko , Nakamura Koshi , Che Songbek , Murakami Kosuke , Takazawa Hideo , Imanishi Masayuki , Imade Mamoru , Morita Yukihiro , Mori Yusuke

    … The GaN crystals are grown at low supersaturation using the Na flux method with the dipping technique. … The crystallinity of the grown GaN crystals is improved compared to that of the seed substrates. …

    Appl. Phys. Express 9(5), 055501, 2016-03-31

    JSAP

  • Effect of seeds and sintering additives on (K,Na,Li)NbO3 lead-free single crystals grown by a solid-state crystal growth method  [in Japanese]

    YANG Jie , FU Zhengqian , YANG Qunbao , LI Yongxiang , LIU Yun

    … A solid-state crystal growth (SSCG) method has been utilized to prepare (K0.45Na0.55)0.94Li0.06NbO3 (KNLN) lead-free piezoelectric single crystals. … It was found that 〈100〉-oriented SrTiO3 seed was inappropriate for growing KNLN single crystal, while 〈100〉-oriented KTaO3 one could act as a good seed. … The inverse pole figure (IPF) showed that the epitaxial layer was indeed single crystal and oriented in the same 〈100〉 direction as the seed. …

    Journal of the Ceramic Society of Japan 124(4), 365-369, 2016

    J-STAGE CrossRef

  • Effect of Feed Location on Particle Size Distribution in Production of Crystals in a Classified Bed Crystallizer

    Masaoka Koji , Yoshikawa Naohito , Hasegawa Masami , Misumi Ryuta , Nishi Kazuhiko , Kaminoyama Meguru

    … From the results of the investigations, it was concluded that a feed positioned inside the slurry phase of the crystallizer affects the crystal growth and agglomeration phenomena, though the knowledge about phenomena of fine crystals is inadequate. … Positioning the feed within the slurry phase increases the crystal growth rate slightly at the bottom of the slurry phase, as well as the agglomeration of the seed crystals, by increasing the degree of supersaturation at the inlet to the crystallizer. …

    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 49(1), 42-47, 2016

    J-STAGE CrossRef

  • Homoepitaxial growth of a-plane GaN layers by reaction between Ga

    Sumi Tomoaki , Taniyama Yuuki , Takatsu Hiroaki , Juta Masami , Kitamoto Akira , Imade Mamoru , Yoshimura Masashi , Isemura Masashi , Mori Yusuke

    … Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. … These results suggest that growth of a-GaN layers using Ga<inf>2</inf>O vapor and NH<inf>3</inf>gas at a high temperature enables the generation of high-quality crystals. …

    Jpn. J. Appl. Phys. 54(6), 065501, 2015-04-30

    JSAP

  • MFI Zeolite Membranes Prepared on Novel Silica Substrates

    Sugiyama Yuto , Ikarugi Syusuke , Oura Kotone , Ikeda Ayumi , Matsuyama Emi , Ono Ryuhei , Nomura Mikihiro , Tawarayama Hiromasa , Saito Takahiro , Kuwahara Kazuya

    … Procedures for coating of MFI seed crystals were important due to the ζ-potential between the substrates and the seed crystals. … Dense MFI membranes were obtained from the seed slurry of pH 2, because the both isoelectric pH of the silica substrates and the MFI seeds are almost the same at 2. …

    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 48(11), 891-896, 2015

    J-STAGE CrossRef

  • Development of Single Crystalline Bone Plate with Low Young's Modulus Using Beta-type Ti-15Mo-5Zr-3Al Alloy  [in Japanese]

    Todai Mitsuharu , Hagihara Koji , Ishimoto Takuya , Yamamoto Kengo , Nakano Takayoshi

    … Single crystals of the Ti-15Mo-5Zr-3Al alloy along [001] direction were succeeded to be grown by using the seed crystal in order to develop the long bone plate along the [001] direction with the lowest Young's modulus. … The ω phase with relatively high Young's modulus was not confirmed to precipitate in the single crystals at room temperature. … Using the oriented single crystals, bone plate with dimensions of 42 × 5 × 1.5 mm<sup>3</sup> …

    Tetsu-to-Hagane 101(9), 501-505, 2015

    J-STAGE CrossRef

  • Shape and quality of Si single bulk crystals grown inside Si melts using the noncontact crucible method

    Nakajima Kazuo , Murai Ryota , Ono Satoshi , Morishita Kohei , Kivambe Maulid , Powell Douglas , Buonassisi Tonio

    … The noncontact crucible method enables production of Si bulk single crystals without crucible contact by intentionally establishing a distinct low-temperature region in the Si melt. … The oxygen concentration was concentrically distributed on the seed axis owing to the convex growing interface. …

    Jpn. J. Appl. Phys. 54(1), 015504, 2014-12-18

    JSAP

  • AlN Single Crystal Growth by means of Sublimation method  [in Japanese]

    IWASAKI Yosuke , NAGATA Shunro , AKIYAMA Hidetoshi , NAKAMURA Keiichiro

    窒化アルミニウム(AlN)は、高い熱伝導率と深紫外領域で優れた透明性を有し、発光層とのマッチングの良さから、深紫外発光ダイオード(DUV-LED)用基板としての優位性が約束されている材料である。本研究では、昇華法により育成したAlN単結晶の深紫外領域における高い透明性を示すと共に、結晶品質へ及ぼすr面とc面という育成方位の違いの影響と合わせて報告する。

    Technical report of IEICE. LQE 114(338), 1-4, 2014-11-20

    CiNii Fulltext PDF - Limited 

  • AlN Single Crystal Growth by means of Sublimation method  [in Japanese]

    IWASAKI Yosuke , NAGATA Shunro , AKIYAMA Hidetoshi , NAKAMURA Keiichiro

    窒化アルミニウム(AlN)は、高い熱伝導率と深紫外領域で優れた透明性を有し、発光層とのマッチングの良さから、深紫外発光ダイオード(DUV-LED)用基板としての優位性が約束されている材料である。本研究では、昇華法により育成したAlN単結晶の深紫外領域における高い透明性を示すと共に、結晶品質へ及ぼすr面とc面という育成方位の違いの影響と合わせて報告する。

    IEICE technical report. Electron devices 114(336), 1-4, 2014-11-20

    CiNii Fulltext PDF - Limited 

  • AlN Single Crystal Growth by means of Sublimation method  [in Japanese]

    IWASAKI Yosuke , NAGATA Shunro , AKIYAMA Hidetoshi , NAKAMURA Keiichiro

    窒化アルミニウム(AlN)は、高い熱伝導率と深紫外領域で優れた透明性を有し、発光層とのマッチングの良さから、深紫外発光ダイオード(DUV-LED)用基板としての優位性が約束されている材料である。本研究では、昇華法により育成したAlN単結晶の深紫外領域における高い透明性を示すと共に、結晶品質へ及ぼすr面とc面という育成方位の違いの影響と合わせて報告する。

    IEICE technical report. Component parts and materials 114(337), 1-4, 2014-11-20

    CiNii Fulltext PDF - Limited 

  • Creation and Characterizating of micro/nano Bi-superconducting whisckers included seed crystals by shock compaction  [in Japanese]

    正田 貴弘 , 富岡 成矢 , 中村 悟士 [他]

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編] 31, 1-4, 2014-10-20

  • High nitrogen pressure solution growth of GaN

    Bockowski Michal

    … A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. … The use of two kinds of seeds: free-standing hydride vapor phase epitaxy GaN (HVPE-GaN) obtained from metal organic chemical vapor deposition (MOCVD)-GaN/sapphire templates and free-standing HVPE-GaN obtained from the ammonothermally grown GaN crystals, is shown. … The role and influence of impurities, like oxygen and magnesium, on GaN crystals grown from gallium solution in the MFS configuration is presented. …

    Jpn. J. Appl. Phys. 53(10), 100203, 2014-09-08

    JSAP

  • 525 Microscopic Observation of Transition of Clathrate Hydrate Crystal Formation Using Seed-Crystals for Cold Thermal Energy Storage  [in Japanese]

    Yonemoto Yukio , Daitoku Tadafumi , Turuda Takashi

    日本機械学会東北支部秋季講演会講演論文集 2014(50), 127-128, 2014-09-05

    CiNii Fulltext PDF - Subscription 

  • Vertical Bridgman growth of sapphire crystals, with thin-neck formation process

    Hoshikawa K , Taishi T , Ohba E , Miyagawa C , Kobayashi T , Yanagisawa J , Shinozuka M

    … A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. … Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown. …

    JOURNAL OF CRYSTAL GROWTH 401, 146-149, 2014-09-01

    IR CrossRef

  • Vertical Bridgman growth of sapphire-Seed crystal shapes and seeding characteristics

    Hoshikawa K , Osada J , Saitou Y , Ohba E , Miyagawa C , Kobayashi T , Yanagisawa J , Shinozuka M , Kanno K

    … The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various shapes of seed crystals and tungsten (W) crucibles shaped to match the seeds. … diameter, c-axis sapphire single crystals were reproducibly grown from three kinds of seed: thin, tapered and full diameter. …

    JOURNAL OF CRYSTAL GROWTH 395, 80-89, 2014-06-01

    IR CrossRef

  • Growth of bulk GaN crystals by the Na-flux point seed technique

    Imade Mamoru , Maruyama Mihoko , Yoshimura Masashi , Mori Yusuke

    Jpn. J. Appl. Phys. 53(5S1), 05FA06, 2014-04-15

    JSAP

  • Study on Mechanism in Crystal Growth with Adhesion Phenomena of Suspended Fine Crystals in Mother Liquid  [in Japanese]

    MASAOKA Koji , MISUMI Ryuta , NISHI Kazuhiko , KAMINOYAMA Meguru

    結晶表面に母液中の懸濁微結晶が付着する現象を利用して見かけの結晶成長速度を向上させる現象について,微結晶の粒径が見かけの結晶成長速度に与える影響を検討した.過冷却度1~30 K,母液中の微結晶数2×10<sup>4</sup>~7×10<sup>5</sup> kg-solution<sup>-1</sup>の条件において晶析 …

    Technical Report on Salt Science 68(4), 251-257, 2014

    J-STAGE CrossRef

  • Dislocations in High-Quality Glucose Isomerase Crystals Grown from Seed Crystals

    Koizumi H , Tachibana M , Yoshizaki I , Fukuyama S , Tsukamoto K , Suzuki Y , Uda S , Kojima K

    CRYSTAL GROWTH & DESIGN 14(10), 5111-5116, 2014

    IR

  • 3c06 Discotic Liquid Crystals of Organic Metal Complexes (111)^† : Effect of the Chain Length and Number of Substituents in the Periphery on their Mesomorphism of the Phthalocyanine-based Copper(II) Complexes  [in Japanese]

    Yoshioka Miho , Megumi Takashi , Ichihara Masahiro , Ohta Kazuchika

    … Hence, this homologue 1a may be a flying-seed-like liquid crystal induced the by the bulky aryl groups without any long alkyl chains. … Accordingly, we have furthermore synthesized additional plural homologues 2-5 without long alkyl groups, and established that the derivatives 4 and 5 are novel flying-seed-like liquid crystals. …

    日本液晶学会討論会講演予稿集 (2013), "3c06-1"-"3c06-2", 2013-09-08

    CiNii Fulltext PDF - Open Access 

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