Search Results:  1-20 of 283

  • 1

    Synthesis of Au Nanorods by Using Gamma-ray Irradiation

    Okamoto Akihiko , Nagata Koichiro , Taguchi Noboru , Iwase Akihiro , Hori Fuminobu

    … To synthesize Au nanorods without the use of seed crystals, we applied gamma-ray irradiation from 60Co radioactive source to reduce aqueous solution containing Au ions. …

    Jpn J Appl Phys 51(11), 11PH01-11PH01-3, 2012-11-25

    The Japan Society of Applied Physics

  • 2

    High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

    Yamamoto Yuji , Harada Shunta , Seki Kazuaki , Horio Atsushi , Mitsuhashi Takato , Ujihara Toru

    … The high-efficiency conversion of threading screw dislocations (TSDs) in 4H-SiC by solution growth provides an efficient method of obtaining ultra high-quality SiC crystals. … The behavior of TSDs on on-axis and off-axis 4H-SiC{0001} seed crystals was investigated by synchrotron X-ray topography. … Almost all TSDs in the off-axis Si-face seed crystal were converted to Frank-type stacking faults on the basal planes. …

    Applied Physics Express 5(11), 115501-115501-3, 2012-11-25

    The Japan Society of Applied Physics

  • 3

    Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method

    Imanishi Masayuki , Murakami Kosuke , Imabayashi Hiroki , Takazawa Hideo , Todoroki Yuma , Matsuo Daisuke , Maruyama Mihoko , Imade Mamoru , Yoshimura Masashi , Mori Yusuke

    … We have recently shown that dislocation-free GaN crystals could be grown on a GaN point seed by the Na-flux method. … To enlarge the diameter of dislocation-free GaN crystals, we propose here the coalescence of GaN crystals grown from many isolated point seeds. …

    Applied Physics Express 5(9), 095501-095501-3, 2012-09-25

    The Japan Society of Applied Physics

  • 4

    Large Defect-Free Synthetic Type IIa Diamond Crystals Synthesized via High Pressure and High Temperature

    Sumiya Hitoshi , Tamasaku Kenji

    … Large high-quality type IIa diamond crystals measuring up to 12 mm in diameter were successfully synthesized by the temperature gradient method at high pressure and high temperature, using high-crystalline-quality (001)-oriented seed crystals, and by controlling the temperature conditions with high precision. …

    Jpn J Appl Phys 51(9), 090102-090102-4, 2012-09-25

    The Japan Society of Applied Physics

  • 5

    The Effects of Ba-Additive on Growth of a-Plane GaN Single Crystals Using Na Flux Method

    Masumoto Keiko , Someno Tatsuya , Murakami Kosuke , Imabayashi Hiroki , Takazawa Hideo , Todoroki Yuma , Matsuo Daisuke , Kitamoto Akira , Maruyama Mihoko , Imade Mamoru , Yoshimura Masashi , Kitaoka Yasuo , Sasaki Takatomo , Mori Yusuke

    … Here, we grew a-plane GaN crystals using the Na flux method and investigated the effects of a Ba-additive on surface morphology and crystallinity. … We found that the crystallinity of the crystals grown by the Na flux method was greatly improved compared with that of seed substrates. … As a result, a-plane GaN crystals with high crystallinity were produced using the Na flux method with the Ba-additive. …

    Jpn J Appl Phys 51(4), 040203-040203-3, 2012-04-25

    The Japan Society of Applied Physics

  • 6

    Seed-Less Melting Growth of Ge(Si) on Insulator : Large Grain Formation by Si Segregation  [in Japanese]

    KATO Ryusuke , KUROSAWA Masashi , YOKOYAMA Hiroyuki , SADOH Taizoh , MIYAO Masanobu

    絶縁膜上におけるSi添加Ge薄膜[Ge(Si)薄膜]の溶融成長を検討した.SiGe系相図の固相線と液相線で挟まれた領域の温度で急速熱処理を行うと,大粒径(15〜30μm)を有するSiGe結晶粒が成長した.結晶粒には,粒の中心付近でピーク値を有するSi濃度分布が形成されていることが明らかになった.Si濃度のピーク値は,熱処理温度における固相線のSi濃度に一致した.以上の現象は,熱処理時のSi偏析によ …

    Technical report of IEICE. OME 112(19), 61-62, 2012-04-20

    CiNii Fulltext PDF - Limited 

  • 7

    Seed-Less Melting Growth of Ge(Si) on Insulator : Large Grain Formation by Si Segregation  [in Japanese]

    KATO Ryusuke , KUROSAWA Masashi , YOKOYAMA Hiroyuki , SADOH Taizoh , MIYAO Masanobu

    絶縁膜上におけるSi添加Ge薄膜[Ge(Si)薄膜]の溶融成長を検討した.SiGe系相図の固相線と液相線で挟まれた領域の温度で急速熱処理を行うと,大粒径(15〜30μm)を有するSiGe結晶粒が成長した.結晶粒には,粒の中心付近でピーク値を有するSi濃度分布が形成されていることが明らかになった.Si濃度のピーク値は,熱処理温度における固相線のSi濃度に一致した.以上の現象は,熱処理時のSi偏析によ …

    Technical report of IEICE. SDM 112(18), 61-62, 2012-04-20

    CiNii Fulltext PDF - Limited 

  • 8

    The Effects of Substrate Surface Treatments on Growth of a-Plane GaN Single Crystals Using Na Flux Method

    Masumoto Keiko , Murakami Kosuke , Imabayashi Hiroki , Takazawa Hideo , Todoroki Yuma , Matsuo Daisuke , Kitamoto Akira , Maruyama Mihoko , Imade Mamoru , Yoshimura Masashi , Kitaoka Yasuo , Sasaki Takatomo , Mori Yusuke

    … The growth of high-quality nonpolar GaN crystals, however, has not yet been achieved. … In this study, we grew a-plane GaN crystals using the Na flux method and investigated the effects of the substrate surface treatment on the crystallinity of grown GaN crystals. … A-plane GaN substrates with chemical mechanical polishing (CMP) and with chemical etching using pyrophosphoric acid were used as the seed substrates. …

    Jpn J Appl Phys 51(3), 035501-035501-4, 2012-03-25

    The Japan Society of Applied Physics

  • 9

    A-34 Effect of apatite seed crystals addition methods on setting reaction of α-TCP based apatite cement  [in Japanese]

    Tsuru K , Ruslin , Maruta M , Matsuya S , Ishikawa K

    … Effect of apatite seed crystals addition methods on setting reaction of α-tricalcium phosphate (α-TCP) based apatite cement (AC) were studied. … The apatite seed crystals was added externally to α-TCP (AC(EA)) whereas α-TCP was partially hydrolyzed to form apatite seed crystals on the surface of α-TCP (AC(PH)). …

    The journal of the Japanese Society for Dental Materials and Devices 31(2), 149, 2012-03-25

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  • 10

    Aqueous Mineral Carbonation Process via Concrete Sludge  [in Japanese]

    IIZUKA Atsushi , HONMA Masato , HAYAKAWA Yasuyuki , YAMASAKI Akihiro , YANAGISAWA Yukio

    コンクリートスラッジ中のカルシウムを利用した二酸化炭素固定プロセスを想定し,そのための基礎データ取得を行った.想定するコンクリートスラッジを利用した二酸化炭素固定プロセスの主要操作は,水希釈と撹拌によるコンクリートスラッジ中のカルシウム分の抽出過程と,残渣分離後の抽出水と二酸化炭素との反応による炭酸カルシウム析出過程である.想定するプロセスの基礎データの取得を目的として,コンクリートポール/パイル …

    KAGAKU KOGAKU RONBUNSHU 38(1), 129-134, 2012-03-20

    J-STAGE CrossRef References (31)

  • 11

    Growth of Prismatic GaN Single Crystals with High Transparency on Small GaN Seed Crystals by Ca--Li-Added Na Flux Method

    Konishi Yusuke , Masumoto Keiko , Murakami Kosuke , Imabayashi Hiroki , Takazawa Hideo , Todoroki Yuma , Matsuo Daisuke , Maruyama Mihoko , Imade Mamoru , Yoshimura Masashi , Sasaki Takatomo , Mori Yusuke

    … The addition of Ca--Li to Na flux was attempted in order to control the growth habit and further improve transparency of GaN crystals. … Furthermore, we succeeded in growing prismatic GaN crystals with high transparency by adding appropriate amounts of Ca and Li to the flux. … This result suggests that the addition of Ca--Li to Na flux is a promising method of growing transparent GaN single crystals. …

    Applied Physics Express 5(2), 025503-025503-3, 2012-02-25

    The Japan Society of Applied Physics References (17)

  • 12

    Study on Solution Growth Technique of Bulk AlN Using Solid Sources(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices)  [in Japanese]

    Kangawa Yoshihiro , Epelbaum Boris M. , Kuwano Noriyuki , Kakimoto Koichi

    AlGaNを用いた深紫外LED開発に向けて,高品質AlN基板の作製が期待されている.本解説では,AlN溶液成長技術の開発に焦点を当て,同分野の最近の研究成果を紹介する.具体的には,AlN溶液成長は従来,窒素ガスを窒素原料として行われてきたが,最近,室温で固体の窒素化合物(Li_3N,融点813℃)を原料とする溶液成長技術が提案され,厚膜が得られるようになってきているので,その手法と得られる結晶の品 …

    Journal of the Japanese Association of Crystal Growth 38(4), 274-279, 2012-01-00

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  • 13

    Repeated Cooling Crystallization for Production of Microcrystals with a Narrow Size Distribution

    Xing Zhongyuan , Igarashi Koichi , Morioka Ayumi , Ooshima Hiroshi

    … The batch cooling crystallization of an organic compound, p-acetanisidide, was carried out using methanol as a solvent and no seed crystal. … The crystallization needed an induction period of 10–200 min before nucleation, and the size distribution of the product crystals was broad with sizes ranging from 10 to 270 µm determined as the diameter of a circle with equal projection area. …

    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 45(10), 811-815, 2012

    J-STAGE CrossRef

  • 14

    Crystal growth and characterization of gallium oxynitride nanowires grown on seed crystals

    Masubuchi Yuji , Yamaoka Ryohei , Motohashi Teruki , Kirihara Kazuhiko , Lee Woong , Watanabe Kentaro , Sekiguchi Takashi , Kikkawa Shinichi

    … Nanowires of gallium oxynitride with wurtzite type structure were grown using seed crystals obtained by ammonia nitridation of an amorphous gallium oxide precursor containing 3 at% nickel additive. … The seed crystals on a silica substrate were annealed with the amorphous gallium oxide precursor under ammonia flow to grow gallium oxynitride nanowires. …

    Journal of Crystal Growth 337(1), 87-92, 2011-12-15

    IR CrossRef

  • 15

    Preparation of Shocked Bi-Superconducting Grains Including Seed-Crystals  [in Japanese]

    KIOKA Masatoshi , MURATA Kengo , KEZUKA Hiroshi , MASHIMO Shigeru , OMURZAK Emilu , ENDO Kazuhiro , ITOU Mineo , KAMEYA Takaki , ARISAWA Syunichi

    電気学会研究会資料. PHS, フィジカルセンサ研究会 2011(32), 13-15, 2011-12-12

    References (14)

  • 16

    Metalorganic chemical vapor deposition of β-FeSi2 on β-FeSi2 seed crystals formed on Si substrates

    Suzuno Mitsushi , Akutsu Keiichi , Kawakami Hideki , Akiyama Kensuke , Suemasu Takashi , 末益 崇

    … We have fabricated a β-FeSi2 film by metalorganic chemical vapor deposition on a Si(001) substrate with β-FeSi2 seed crystals grown by molecular beam epitaxy, and investigated the crystallinity, surface morphology and temperature dependence of photoresponse properties of the β-FeSi2 film. …

    Thin solid films 519(24), 8473-8476, 2011-10-00

    IR CrossRef

  • 17

    Relationship between Heat and Mass Transfer and Growth Velocity during Growth of Bulk Crystals(<Special Topic>How Do We Model Crystal Growth Phenomena?)  [in Japanese]

    Kakimoto Koichi , Gao Bing , Nakano Satoshi , Kangawa Yoshihiro

    半導体バルク結晶は,環境とエネルギーの喫緊の問題に対しての解を与えることが可能な材料の一つであり,今後も重要な材料である.この半導体バルク結晶を用いた電子・光デバイスを社会に普及させるためには,可能な限り結晶の成長速度を増加させる必要がある.結晶の成長速度は,過飽和度や過冷却度や結晶学的な方位,そして欠陥や不純物の有無等により決定される.さらには,結晶表面の構造にも影響される.結晶成長速度の向上の …

    Journal of the Japanese Association of Crystal Growth 38(2), 86-92, 2011-07-00

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  • 18

    Control of polymorphic transition inducing preferential enrichment

    Tamura Rui , Iwama Sekai , Gonnade Rajesh G.

    … Preferential enrichment is an unusual symmetry-breaking enantiomeric resolution phenomenon that is initiated by the solvent-assisted solid-to-solid transformation of a metastable polymorphic form into a thermodynamically stable one during crystallization from the supersaturated solution of a certain kind of racemic crystals. …

    CrystEngComm 13(17), 5269-5280, 2011-05-00

    IR CrossRef

  • 19

    Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications

    Arivanandhan M. , Saito Y. , Koyama T. , Momose Y. , Ikeda H. , Tanaka A. , Tatsuoka T. , Aswal D.K. , Inatomi Y. , Hayakawa Yasuhiro

    … Compositionally homogeneous Si0.52Ge0.48 bulk crystals were grown under a mild temperature gradient using a Si(seed)/Ge/Si(feed) sandwich structure for thermoelectric (TE) applications. … The temperature gradient of 0.4 degrees C/mm resulted in homogeneous Si0.52Ge0.48 bulk crystals of 22 mm length with a Ge compositional fluctuation of about 0.0023/mm. … The compositions of the grown crystals were determined by means of Electron Probe Micro-Analysis (EPMA). …

    Journal of Crystal Growth 318(1), 324-327, 2011-03-01

    IR CrossRef

  • 20

    Solvent-Induced Transformation of Myo-Inositol Crystal

    KUMASHIRO Mizuki , SAITOH Shunki , KOBAYAKAWA Azusa , HIRASAWA Izumi

    … In our previous study, we observed anhydrate and dihydrate crystals of myo-inositol in water and/or an ethanol–water system and transformation phenomena. … Therefore, we attempted adding seed crystals to different alcohol solvents, which resulted in the transformation of seed crystals of a dihydrate into anhydrate crystals. …

    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 44(1), 187-190, 2011-03-01

    J-STAGE CrossRef References (16)