Search Results:　 1-20 of 177

1

Selective-Area Growth of Thick Diamond Films Using Chemically Stable Masks of Ru/Au and Mo/Au

Nagase Masanori , Watanabe Katsumi , Umezawa Hitoshi , Shikata Shinichi

… Selective-area growth of diamond films in microwave-plasma chemical vapor deposition was performed using newly developed masks. …

Jpn J Appl Phys 51(7), 070202-070202-3, 2012-07-25

The Japan Society of Applied Physics
2

Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

Oda Katsuya , Tani Kazuki , Saito Shin-ichi , Okumura Tadashi , Ido Tatemi

… Single crystal Ge layers were successfully fabricated on the buried oxide layer of a silicon-on-insulator wafer using a combined technique of two-step selective epitaxial growth and Ge condensation. … X-ray diffraction measurements revealed that the single crystal Ge layer formed on the buried oxide layer had a tensile strain of 0.07% on the \langle 110\rangle lattice plane in a large unpatterned area. …

Jpn J Appl Phys 51(4), 04DG10-04DG10-5, 2012-04-25

The Japan Society of Applied Physics
3

A-34 Effect of apatite seed crystals addition methods on setting reaction of α-TCP based apatite cement [in Japanese]

Tsuru K , Ruslin , Maruta M , Matsuya S , Ishikawa K

… These were thought to be caused by the selective crystal growth of apatite on the surface of α-TCP particles. …

The journal of the Japanese Society for Dental Materials and Devices 31(2), 149, 2012-03-25

CiNii Fulltext PDF - Subscription Ichushi Web References (3)
4

Fabrication and Characterization of InP Nanowire Light-Emitting Diodes

Maeda Satoshi , Tomioka Katsuhiro , Hara Shinjiroh , Motohisa Junichi

… Indium phosphide NWs with axial p--n junction were grown by selective-area metalorganic vapor phase epitaxy. … The results of secondary-electron-microscopy (SEM) observation and photoluminescence measurement showed the formation of wurtzite InP NWs with some mixture of zincblende crystal phase, as expected from the used growth conditions. …

Jpn J Appl Phys 51(2), 02BN03-02BN03-4, 2012-02-25

The Japan Society of Applied Physics
5

Growth and Characterization of MnAs Nanoclusters Embedded in GaAs Nanowires by Metal--Organic Vapor Phase Epitaxy

Yatago Masatoshi , Iguchi Hiroko , Sakita Shinya , Hara Shinjiro

… The authors report on the fabrication of MnAs/GaAs hybrid nanowires by combining selective-area metal--organic vapor phase epitaxy of GaAs nanowires and ``endotaxy'' of MnAs nanoclusters. … From the cross-sectional characterizations by transmission electron microscopy, the average width of MnAs nanoclusters with the hexagonal NiAs-type crystal structure and the average depth in GaAs nanowires are estimated to be about 10 and 8 nm, respectively. …

Jpn J Appl Phys 51(2), 02BH01-02BH01-8, 2012-02-25

The Japan Society of Applied Physics
6

Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors

Akabori Masashi , Murakami Tatsuya , Yamada Syoji

… We have synthesized InAs nanowires (NWs) by selective area molecular beam epitaxy (SA-MBE) on GaAs masked substrates. …

Journal of Crystal Growth 345(1), 22-26, 2012-02-10

IR CrossRef
7

Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics

ASAKAWA Kiyoshi , SUGIMOTO Yoshimasa , IKEDA Naoki , TSUYA Daiju , KOIDE Yasuo , WATANABE Yoshinori , OZAKI Nobuhiko , OHKOUCHI Shunsuke , NOMURA Tsuyoshi , INOUE Daisuke , MATSUI Takayuki , MIURA Atsushi , FUJIKAWA Hisayoshi , SATO Kazuo

… This paper reviews our recent activities on nanophotonics based on a photonic crystal (PC)/quantum dot (QD)-combined structure for an all-optical device and a metal/semiconductor composite structure using surface plasmon (SP) and negative refractive index material (NIM). …

IEICE Transactions on Electronics 95(2), 178-187, 2012-02-01

J-STAGE CrossRef References (37)
8

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy

Kohashi Yoshinori , Sato Takuya , Ikejiri Keitaro , Tomioka Katsuhiro , Hara Shinjiroh , Motohisa Junichi

… Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and its growth-temperature dependence of growth rate and composition was studied. … In particular, nanowire growth rate rapidly decreases as growth temperature increases. …

Journal of Crystal Growth 338(1), 47-51, 2012-01-01

IR CrossRef
9

Growth Mechanism of Unpolar Nitride Semiconductor on Maskless Patterned Sapphire Substrates(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices) [in Japanese]

Okada Narihito , Tadatomo Kazuyuki

我々はサファイア加工基板の側壁よりGaNを選択成長させる手法を用いて非極性面GaNの結晶成長に取り組んできた.その結果,サファイア加工基板上非極性面GaNの結晶成長は成長阻害層を用いなくとも実現できることが分かってきた.本稿ではこのマスクレスサファイア加工基板上のGaNの成長メカニズムを低温バッファー層,窒化処理,オフ角を切り口に紹介する.成長メカニズム解析の結果,マスクレスサファイア加工基板上非 …

Journal of the Japanese Association of Crystal Growth 38(4), 231-240, 2012-01-00

CiNii Fulltext PDF - Subscription References (43)
10

Fabrication of GaN Step-free Surfaces by Controlling the Surface Supersaturation(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices) [in Japanese]

Akasaka Tetsuya , Kobayashi Yasuyuki , Kasu Makoto

MOVPE選択成長法を用いて,1分子層の段差も存在しない,GaNステップフリー面を大きさ50μmまで形成することに成功した.このステップフリー面は螺旋・混合転位が全くない選択成長領域に形成され,多数核モードで成長が進行することを明らかにした.一方,選択成長領域に1本でも螺旋転位や混合転位が存在すると,転位を中心とする螺旋成長モードで成長は進行し,GaN表面は成長スパイラルの単分子層ステップで覆われ …

Journal of the Japanese Association of Crystal Growth 38(4), 221-226, 2012-01-00

CiNii Fulltext PDF - Subscription References (27)
11

Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources [in Japanese]

ARITA Munetaka , CHOI Kihyun , ARAKAWA Yasuhiko

独自に開発したGaNナノワイヤの無触媒有機金属気相成長法による作製技術(自己形成法および選択成長法)について、得られる結晶の形状に影響を与えるパラメータの熱力学的および反応工学的解析を行った。その結果、GaNナノワイヤは低過飽和度において形成されること、微細な構造の選択成長ではパターンの開口率を考慮して材料供給量を最適化する必要があること、が明らかになった。一方、高品質な単一光子発生器への応用を目 …

Technical report of IEICE. LQE 111(292), 121-126, 2011-11-10

CiNii Fulltext PDF - Limited
12

Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources [in Japanese]

ARITA Munetaka , CHOI Kihyun , ARAKAWA Yasuhiko

独自に開発したGaNナノワイヤの無触媒有機金属気相成長法による作製技術(自己形成法および選択成長法)について、得られる結晶の形状に影響を与えるパラメータの熱力学的および反応工学的解析を行った。その結果、GaNナノワイヤは低過飽和度において形成されること、微細な構造の選択成長ではパターンの開口率を考慮して材料供給量を最適化する必要があること、が明らかになった。一方、高品質な単一光子発生器への応用を目 …

IEICE technical report. Electron devices 111(290), 121-126, 2011-11-10

CiNii Fulltext PDF - Limited
13

Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources [in Japanese]

ARITA Munetaka , CHOI Kihyun , ARAKAWA Yasuhiko

独自に開発したGaNナノワイヤの無触媒有機金属気相成長法による作製技術(自己形成法および選択成長法)について、得られる結晶の形状に影響を与えるパラメータの熱力学的および反応工学的解析を行った。その結果、GaNナノワイヤは低過飽和度において形成されること、微細な構造の選択成長ではパターンの開口率を考慮して材料供給量を最適化する必要があること、が明らかになった。一方、高品質な単一光子発生器への応用を目 …

IEICE technical report. Component parts and materials 111(291), 121-126, 2011-11-10

CiNii Fulltext PDF - Limited
14

Optically Pumped Green (530--560 nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays

Ishizawa Shusuke , Kishino Katsumi , Araki Ryuichi , Kikuchi Akihiko , Sugimoto Shuichi

… Various InGaN-based triangular-lattice nanocolumn arrays with different lattice constants and nanocolumn diameters were prepared on a (0001) GaN/$c$-sapphire template using selective-area growth by rf-plasma-assisted molecular-beam epitaxy. … The photonic crystal effect occurred, with the periodic arrangement of the nanocolumns contributing to the stimulated emission. …

Applied Physics Express 4(5), 055001-055001-3, 2011-05-25

The Japan Society of Applied Physics References (22)
15

Electric field assisted growth of the lead phthalocyanine crystals [in Japanese]

SAKAI Masatoshi , OGAWA Taiji , IIZUKA Masaaki , YAMAUCHI Hiroshi , NAKAMURA Masakazu , KUDO Kazuhiro

鉛フタロシアニン(PbPc)分子の準熱平衡条件下における結晶成長に対して、外部電界が結晶成長に与える影響を詳細に調べた。管状炉の中に配線を施したガラス基板を設置し、外部電源から直流電界を印加しながら結晶成長を行った。その結果、鉛フタロシアニン結晶は陽極側に数多く成長し、陰極側に成長する結晶の数は減少した。本実験条件では、陰極側に配向成長も見られた。このような結晶密度の差は、印加電界の増大に伴って増 …

Technical report of IEICE. OME 111(73), 7-9, 2011-05-20

CiNii Fulltext PDF - Subscription References (15)
16

Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy

Mouleeswaran D. , Koyama T. , Hayakawa Yasuhiro

… The orientation dependence of the selective epitaxial growth of Gallium Arsenide (GaAs) has been investigated to achieve a thick epitaxial layer for application to X-ray detectors. … Selective epitaxial growth was carried out on patterned GaAs with [0 1 1], [0 1 2], [0 1 0], [0 1 －2], [0 1 －1] and their equivalent seed orientations by current-controlled liquid phase epitaxy (CCLPE). …

Journal of Crystal Growth 321(1), 85-90, 2011-04-15

IR CrossRef
17

Effects of substrate surface properties on particular morphology of precipitation particles at solid–liquid interfaces [in Japanese]

Miyake Hiromasa , Shimosaka Atsuko , Shirakawa Yoshiyuki , Hidaka Jusuke , ミヤケヒロマサ , シモサカアツコ , シラカワヨシユキ , ヒダカジュウスケ , Miyake Hiromasa , Shimosaka Atsuko , Shirakawa Yoshiyuki , Hidaka Jusuke

… どの構造化の違いが明らかとなった.さらに,複合化の汎用性を高める目的で高配向熱分解黒鉛(HOPG)上におけるNaCl,KCl水溶液の構造解析を行った.その結果,KCl水溶液の方が界面近傍にクラスターが生成することが分かった.In this study, as a model case to support the development of composite technologies with crystallization method, the behavior of alkali metal chloride solutions at crystal substrates/solutions interfaces has been investigated through molecular dynamics (MD) …

The science and engineering review of Doshisha University 52(1), 45-53, 2011-04-00

IR
18

Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum

Lee Ah Reum , Jeon Hunsoo , Lee Gang-Seok , Ok Jin-Eun , Jo Dong-Wan , Kim Kyoung Hwa , Yi Sam Nyung , Yang Min , Ahn Hyung Soo , Cho Chae-Ryong , Kim Suok-Whan , Lee Jae-Hak , Ha Hong-Ju

… We report the characterization of the InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) grown on a patterned sapphire substrate by metal organic chemical vapor deposition (MOCVD) using the selective area growth (SAG) method. … After the growth, the InGaN/GaN MQW LED of 200 μm diameter had various crystal facets and a shape similar to volcanic craters, which were not observed in the 700-μm-diameter sample. …

Jpn J Appl Phys 50(1), 01AD06-01AD06-4, 2011-01-25

The Japan Society of Applied Physics
19

Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy

Murase Tasuku , Tanikawa Tomoyuki , Honda Yoshio , Yamaguchi Masahito , Amano Hiroshi , Sawaki Nobuhiko

… A drastic reduction of the dislocation density in a semipolar ($11\bar{2}2$) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. …

Jpn J Appl Phys 50(1), 01AD04-01AD04-3, 2011-01-25

The Japan Society of Applied Physics
20

Selective MOVPE growth of InAs QDs using double-cap procedure

Kawashima F. , Kobie R. , Suzuki Y. , Shimomura K.

… Broadband spectrum emission was obtained for self-assembled Stranski?Krastanov (S?K) InAs/InP quantum dots (QDs) grown by selective area low pressure metalorganic vapor phase epitaxy (MOVPE) using the double-cap procedure. … Selective area growth using a SiO2 narrow stripe mask array pattern was carried out to control and widen the emission wavelength range of the QDs in 16 stripe mask array waveguides. …

Journal of Crystal Growth 318(1), 1109-1112, 2011-00-00

IR CrossRef

Search Results:　 1-20 of 177

Related Authors

Related Journals

Search Results: 1-20 of 177

Related Authors

Related Journals

Search Results:　 1-20 of 177