CiNii Articles

1

Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

Kosugi R. , Umeda T. , Sakuma Y. , 梅田享英

… Nitrogen atoms fixed in the SiO2/SiC interface region were studied by x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. … A thin oxide film (<5 Å) formed during annealing in an NO atmosphere on a (0001) 4H-SiC surface, incorporating nitrogen atoms into the interface region. …

Applied physics letters 99(18), 182111-1, 2011-11

IR CrossRef
2

Contact angle measurement of molten lead–lithium on silicon carbide surfaces

Ueki Yoshitaka , Nagai Keiichi , Kunugi Tomoaki , Hirabayashi Masaru , Ara Kuniaki , Yonemoto Yukihiro , Hinoki Tatsuya

… Measurements of the contact angles at the different temperatures of a molten lead–lithium eutectic alloy (PbLi) droplet on a silicon carbide (SiC) wall are needed for the research and development both of a magnetic confinement fusion (MCF) and an inertia confinement fusion (ICF) blankets. … PbLi coolant/breeder flows in the coolant channel, which is made of the SiC walls, and will experience a flow slip at the wall, called as a magnetohydrodynamic (MHD) slip flow. …

Fusion Engineering and Design 86(9-11), 2297-2300, 2011-10

IR CrossRef
3

Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface

Kageshima Hiroyuki , Hibino Hiroki , Yamaguchi Hiroshi , Nagase Masao

… The growth of epitaxial graphene on the SiC(0001) surface is theoretically studied by assuming silicon (Si) sublimation from the surface. … Our results indicate that a new graphene sheet grows from the interface between the old graphene sheets and SiC substrate, as found in our previous study on graphene growth by carbon (C) deposition. …

Jpn J Appl Phys 50(9), 095601-095601-6, 2011-09-25

The Japan Society of Applied Physics
4

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices

Noborio Masato , Grieb Michael , Bauer Anton J. , Peters Dethard , Friedrichs Peter , Suda Jun , Kimoto Tsunenobu

… In this paper, we have investigated reliability of n- and p-type 4H-SiC(0001) metal--oxide--semiconductor (MOS) devices with N<sub>2</sub>O-grown oxides and deposited oxides annealed in N<sub>2</sub>O. … on n- and p-SiC exhibited a high charge-to-breakdown of 70.0 and 54.9 C cm-2, respectively. …

Jpn J Appl Phys 50(9), 090201-090201-3, 2011-09-25

The Japan Society of Applied Physics
5

High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer

Irikawa Junpei , Miyajima Shinsuke , Watahiki Tatsuro , Konagai Makoto

… Heterojunction crystalline silicon solar cells using a nanocrystalline cubic silicon carbide (nc-3C-SiC) emitter were optimized by changing the deposition time of a buffer layer. … The excellent cell performance is a direct evidence of the potential of the nc-3C-SiC:H emitter. …

Applied Physics Express 4(9), 092301-092301-3, 2011-09-25

The Japan Society of Applied Physics
6

B-5-82 Comparison of Average and Cell-edge User Throughput between Orthogonal Access and Non-orthogonal Access with SIC in Cellular Downlink [in Japanese]

Tomida Shun , Higuchi Kenichi

Proceedings of the Society Conference of IEICE 2011年_通信(1), 461, 2011-08-30

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7

B-5-81 Comparison of Total and Cell-edge User Throughput between Orthogonal Access and Non-orthogonal Access with SIC in Cellular Uplink [in Japanese]

Takeda Tomohiro , Higuchi Kenichi

Proceedings of the Society Conference of IEICE 2011年_通信(1), 460, 2011-08-30

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8

B-5-28 A Study on MBER-SIC Receiver Using Virtual Channel for Overloaded MIMO Spatial Multiplexing Systems [in Japanese]

GOTO Yuji , SATO Tadatomo

Proceedings of the Society Conference of IEICE 2011年_通信(1), 407, 2011-08-30

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9

Damage-Free Dry Polishing of 4H-SiC Combined with Atmospheric-Pressure Water Vapor Plasma Oxidation

Deng Hui , Takiguchi Tatsuya , Ueda Masaki , Hattori Azusa N. , Zettsu Nobuyuki , Yamamura Kazuya

… A dry polishing technique combined with the atmospheric-pressure water vapor plasma oxidation has been proposed for the high-integrity smoothing of SiC materials. … X-ray photoelectron spectroscopy (XPS) measurements indicated that the irradiation of water vapor plasma efficiently oxidized the surface of SiC because of the reactive species in plasma such as OH radicals. … Swell-like structures were also observed along scratches on the SiC surface. …

Jpn J Appl Phys 50(8), 08JG05-08JG05-4, 2011-08-25

The Japan Society of Applied Physics
10

22pGQ-10 First principles calculations on vibration free energies of SiC polytypes [in Japanese]

Yamamoto Y. , Nishitani S. R. , Kaneko T.

Meeting abstracts of the Physical Society of Japan 66(2-4), 993, 2011-08-24

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11

22pGQ-9 First-principles PAW calculations of ELNES/XANES for Si・Diamond・SiC grain boundaries [in Japanese]

Tanaka S. , Kohyama M. , Tamura T.

Meeting abstracts of the Physical Society of Japan 66(2-4), 993, 2011-08-24

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12

22pRC-8 Electronic structure analysis of Nitrogen atom in oxynitride thin film on SiC by depth-resolved XAFS method [in Japanese]

Maejima N. , Matsui R. , Goto K. , Matsui H. , Matsushita T. , Daimon H.

Meeting abstracts of the Physical Society of Japan 66(2-4), 926, 2011-08-24

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13

21pHA-2 Mechanism of nitric acid vapor oxidation of the SiC(0001) (Si face) and SiC(000-1) (C face) surfaces [in Japanese]

Joe Hye-Suk , Matsumoto Taketoshi , Kim Woo-Byoung , Kobayashi Hikaru

Meeting abstracts of the Physical Society of Japan 66(2-4), 901, 2011-08-24

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14

21pHA-1 Graphitization of Boron pre-adsorbed 6H-SiC(0001) surface [in Japanese]

Aoki Yuki , Hirayama Hiroyuki

Meeting abstracts of the Physical Society of Japan 66(2-4), 901, 2011-08-24

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15

22aTE-11 High-resolution ARPES study of K-doped bilayer graphene on H-terminated SiC [in Japanese]

Sugawara K. , Kanetani K. , Sato T. , Takahashi T.

Meeting abstracts of the Physical Society of Japan 66(2-4), 860, 2011-08-24

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16

22aTE-6 Surface-Enhanced Raman Scattering of Graphene on SiC II [in Japanese]

Sekine Y. , Hibino H. , Oguri K. , Akazaki T. , Kageshima H. , Nagase M. , Yamaguchi H.

Meeting abstracts of the Physical Society of Japan 66(2-4), 858, 2011-08-24

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17

22aTE-5 Theoretical study of graphene growth on SiC(0001) using a trench model [in Japanese]

Kageshima H. , Hibino H. , Yamaguchi H. , Nagase N.

Meeting abstracts of the Physical Society of Japan 66(2-4), 858, 2011-08-24

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18

22aTE-4 Molecular Dynamics Simulations of graphene formation on SiC(0001) [in Japanese]

Norimatsu W. , Morita M. , Kusunoki M. , Irle Stephan

Meeting abstracts of the Physical Society of Japan 66(2-4), 858, 2011-08-24

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19

22aTE-3 π electronic states of graphene grown on vicinal SiC substrates studied by time-resolved photoelectron spectroscopy [in Japanese]

Nakatsuji K. , Iimori T. , Yoshimura T. , Ishida Y. , Yamamoto T. , Shin S. , Kanai T. , Watanabe S. , Morita K. , Kurisu Y. , Tanaka S. , Komori F.

Meeting abstracts of the Physical Society of Japan 66(2-4), 858, 2011-08-24

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20

22aTE-2 Electronic states of graphene grown on vicinal SiC substrates [in Japanese]

Yoshimura T. , Nakatsuji K. , Morita K. , Uehara N. , Kurusu Y. , Tanaka S. , Komori F.

Meeting abstracts of the Physical Society of Japan 66(2-4), 857, 2011-08-24

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