検索結果:　 2670件中 1-20 を表示

Wang Jer-Chyi , Lu Tseng-Fu , Shih Hui-Yu [他] , Yang Chia-Ming , Lai Chao-Sung , Kao Chyuan-Haur , Pan Tung-Ming

… The proposed RINOS device with the oxide--nitride--oxide (ONO) structure exhibits a high pH sensitivity (larger than the ideal Nernst response, ${\sim}59$ mV/pH) owing to hydrogen ion adsorption by the trapped electrons within the embedded Si3N4 layer when applying a stress voltage. … To improve the retention of an increased sensitivity, an additional SiO2 layer as a blocking layer between the Sm2O3 and Si3N4 films to form the RIONOS device was proposed. …

Jpn J Appl Phys 50(4), 04DL09-04DL09-5, 2011-04-25

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Chen Hsiu-Hsiang , Fu Chien-Chung

… Second, three different dielectric layers (SiO2, Si3N4, and Ta2O5) with the same thickness were tested to confirm the dielectric constant effect. …

Jpn J Appl Phys 50(3), 037202-037202-8, 2011-03-25

応用物理学会

Chathirat Naphat , Atthi Nithi , Hruanun Charndet [他] , Poyai Amporn , Leasen Suthisa , Osotchan Tanakorn , Hodak Jose H.

… A biosensor structure comprising silicon nitride (Si3N4) micrograting arrays coated with a spin-on-glass (SOG) material was investigated. …

Jpn J Appl Phys 50(1), 01BK01-01BK01-6, 2011-01-25

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Goto Tetsuya , Seki Nobuaki , Shirai Yasuyuki [他] , Ohmi Tadahiro

… Also, protection film depositions of Si3N4 on a silver surface by microwave-excited-plasma-enhanced chemical vapor deposition were carried out to improve the durability of silver films, which are easily oxidized and/or sulfurized, resulting in the degradation of the reflectivity of the films. …

Jpn J Appl Phys 50(1), 015801-015801-6, 2011-01-25

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齊藤 利幸 , 鈴木 雅裕 , 本多 文洋 [他]

材料技術 29(4), 134-141, 2011-07

小池 渉 , 桃沢 愛 , 藤間 卓也 , 高木 研一

… To investigate the possibility to form the solid solution of (Ti, Mo)(C, N) with B, Al and Si, powder mixtures of 5 at% of B, Al and Si added (Ti0.9Mo0.1)(C0.55N0.45) prepared from Ti(C0.5N0.5), Mo2C, TiB2, AlN and Si3N4 were heat treated at 2473 K for 2 h in N2. … On the other hand hot pressed sintered bodies dissolved some amount of B and Si and resulted in to form solid solutions but the sintered body did not dissolve any Al. …

粉体および粉末冶金 58(7), 447-451, 2011

J-STAGE CrossRef

Wang Pengfei , Adachi Koshi

… These wear rates increased almost linearly with the increase of oxygen concentration in inert gas environments, except for the case of CNx coated Si3N4 ball. …

Tribology Online 6(6), 265-272, 2011

J-STAGE CrossRef

野老山 貴行 , 齋藤 諒介 , 梅原 徳次 , 不破 良雄

… It was reported that CNx coating showed superlow friction when it slid against a Si3N4 ball in N2 environment. … The CNx coating was synthesized on Si(100) substrate with 5 min of nitrogen ion beam sputtering before synthesis. …

日本機械学会論文集Ｃ編 77(775), 624-630, 2011

J-STAGE CrossRef

YOSHIO Sara , TATAMI Junichi , WAKIHARA Toru , YAMAKAWA Tomohiro , NAKANO Hiromi , KOMEYA Katsutoshi , MEGURO Takeshi

… The relative density of the CNT dispersed Si3N4 ceramics was higher than 90% except for the sample containing less than 1 wt % of CNTs and fired at a temperature of 1800°C. … By TEM observation, CNTs were found to exist in the grain boundary in the Si3N4 ceramics, and their diameter was found to be almost the same as that of raw CNTs. … The electrical conductivities of the samples increased with an increase in the firing temperature, which was explained by the grain growth of β-Si3N4. …

Journal of the Ceramic Society of Japan 119(1385), 70-75, 2011

J-STAGE CrossRef

Ono Haruhiko , Ishizuka Takahide , Kato Chihiro [他] , Arafune Koji , Ohshita Yoshio , Ogura Atsushi

… The distribution and bonding states depended on the impurity: nitrogen and oxygen precipitated as crystalline nitride ($\alpha$-Si3N4) and amorphous oxide (SiO2), respectively, while carbon distributed homogeneously as isolated substitutional atoms. … The nitrogen and oxygen precipitates remained independent, and thus, they might not have formed a compound oxynitride like Si2N2O. …

Jpn J Appl Phys 49(11), 110202-110202-3, 2010-11-25

応用物理学会