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不純物がドープされたULSIセルに生ずる転位の結晶塑性解析
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佐藤 満弘
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大橋 鉄也
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丸泉 琢也
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北川 功
… Dislocation accumulation in the models during cooling processes of device fabrication is analysed by employing a technique of crystal plasticity analysis and evaluate the thermal stress, plastic slip deformation and accumulation of dislocations when the temperature drops from the initial value of 1000℃. … Possibilities for the control of dislocation accumulation in impurity doped-ULSI cells are discussed. …
日本機械学會論文集. A編 75(756), 1057-1062, 20090825
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