Search Results:　 1-20 of 267

1

Low Dislocation Densities of Nitride-Based Light-Emitting Diodes with a Preflow of NH3 Source before Growth of AlN Buffer Layer

Wang Chun-Kai , Chiou Yu-Zung , Sun De-Jun , Chiang Tsung-Hsun

… It was found that the density of threading dislocations significantly decreased owing to the abatement of lattice mismatch between a GaN layer and a sapphire substrate. …

Jpn J Appl Phys 52(1), 01AG07-01AG07-4, 2013-01-25

The Japan Society of Applied Physics
2

Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

Dasgupta Sansaptak , Nidhi , Wu Feng , Speck James S. , Mishra Umesh K.

… The structural quality of the as-grown GaN films was further improved by insertion of AlGaN/GaN superlattice structures, resulting in reduced threading dislocation density and also efficient stress management in the GaN film to mitigate crack formation. …

Jpn J Appl Phys 51(11), 115503-115503-5, 2012-11-25

The Japan Society of Applied Physics
3

Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy

Okumura Hironori , Kimoto Tsunenobu , Suda Jun

… The growth layer had a relatively low threading dislocation density of 4\times 10^{8}--4\times 10^{9} cm-2. … Low dislocation density, a layer-by-layer growth mode, and low growth temperature may contribute to such a large critical thickness. …

Applied Physics Express 5(10), 105502-105502-3, 2012-10-25

The Japan Society of Applied Physics
4

Growth and Band Gap Control of Corundum-Structured \alpha-(AlGa)2O3 Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

Ito Hiroshi , Kaneko Kentaro , Fujita Shizuo

… The transmission electron microscope observation suggested the formation of the crystallographically good interface of \alpha-(AlxGa1-x)2O3/Ga2O3 without the severe generation of threading dislocation lines from the interface. …

Jpn J Appl Phys 51(10), 100207-100207-3, 2012-10-25

The Japan Society of Applied Physics
5

Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes

Ichikawa Shuhei , Kawahara Koutarou , Suda Jun , Kimoto Tsunenobu

… By deep-level elimination, photoluminescence (PL) in the infrared region (wavelength: 700--950 nm) was remarkably enhanced at locations of threading dislocations. … A threading screw dislocation exhibited much stronger infrared PL than a threading edge dislocation. …

Applied Physics Express 5(10), 101301-101301-3, 2012-10-25

The Japan Society of Applied Physics
6

Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

Hirama Kazuyuki , Taniyasu Yoshitaka , Kasu Makoto

… Threading dislocation density of the AlGaN/GaN HEMT structure grown on the diamond (111) surface was evaluated from cross-sectional transmission electron microscope images. … The densities of pure-screw-, pure-edge- and mixed-type threading dislocation were 0.3\times 10^{9}, 4.1\times 10^{9}, and 4.5\times 10^{9} cm-2, respectively. …

Jpn J Appl Phys 51(9), 090114-090114-4, 2012-09-25

The Japan Society of Applied Physics
7

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Shatalov Max , Sun Wenhong , Lunev Alex , Hu Xuhong , Dobrinsky Alex , Bilenko Yuri , Yang Jinwei , Shur Michael , Gaska Remis , Moe Craig , Garrett Gregory , Wraback Michael

… Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the external quantum efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates. …

Applied Physics Express 5(8), 082101-082101-3, 2012-08-25

The Japan Society of Applied Physics
8

Correlation between Device Performance and Defects in GaInN-Based Solar Cells

Mori Mikiko , Kondo Shinichiro , Yamamoto Shota , Nakao Tatsuro , Fujii Takahiro , Iwaya Motoaki , Takeuchi Tetsuya , Kamiyama Satoshi , Akasaki Isamu , Amano Hiroshi

… We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. … In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer. …

Applied Physics Express 5(8), 082301-082301-3, 2012-08-25

The Japan Society of Applied Physics
9

Transmission Electron Microscopy Analysis of a Threading Dislocation with c+a Burgers Vector in 4H-SiC

Sugawara Yoshihiro , Nakamori Michio , Yao Yong-Zhao , Ishikawa Yukari , Danno Katsunori , Suzuki Hiroshi , Bessho Takeshi , Yamaguchi Satoshi , Nishikawa Koichi , Ikuhara Yuichi

… A threading dislocation (TD) in 4H-SiC, which was interpreted as a right-handed threading screw dislocation (TSD) by synchrotron monochromatic-beam X-ray topography (SMBXT) and molten KOH etching with Na2O2 additive (KN etching), was characterized by large-angle convergent-beam electron diffraction (LACBED) and weak-beam dark-field methods. …

Applied Physics Express 5(8), 081301-081301-3, 2012-08-25

The Japan Society of Applied Physics
10

InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers

Gu Yi , Zhang Yonggang , Wang Kai , Fang Xiang , Liu Kehui

… In this work, the threading dislocation suppression effects of InAs/In0.52Al0.48As digital alloy intermediate layers in an InP-based InAlAs graded metamorphic buffer were investigated to improve the structural and optical qualities of the buffer. …

Jpn J Appl Phys 51(8), 080205-080205-3, 2012-08-25

The Japan Society of Applied Physics
11

Transmission Electron Microscopy Analysis of a Threading Dislocation with c+a Burgers Vector in 4H-SiC

SUGAWARA Yoshihiro , NAKAMORI Michio , YAO Yong-Zhao , ISHIKAWA Yukari , DANNO Katsunori , SUZUKI Hiroshi , BESSHO Takeshi , YAMAGUCHI Satoshi , NISHIKAWA Koichi , IKUHARA Yuichi

Applied physics express 5(8), "081301-1"-"081301-3", 2012-08-25

References (13)
12

Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

Dobbie Andy , Nguyen Van Huy , Myronov Maksym , Whall Terry E. , Parker Evan H. C. , Leadley David R.

… We demonstrate that the residual compressive strain in a thin, partially relaxed Ge seed layer can be exploited to promote an intermediate islanding step, significantly reducing the threading dislocation density ({\sim}3\times 10^{8} cm-2) and almost entirely suppressing stacking fault formation. …

Applied Physics Express 5(7), 071301-071301-3, 2012-07-25

The Japan Society of Applied Physics
13

Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes

Kohno Takakazu , Sudo Yasuhiro , Yamauchi Masaki , Mitsui Kazuya , Kudo Hiromitsu , Okagawa Hiroaki , Yamada Yoichi

… A correlation between IQE and threading dislocation density was clearly observed under both excitation conditions. … The validity of our method for estimating IQE is discussed on the basis of the correlation between IQE and nonradiative recombination rate for three LEDs with different threading dislocation densities. …

Jpn J Appl Phys 51(7), 072102-072102-7, 2012-07-25

The Japan Society of Applied Physics
14

Heteroepitaxial growth of GaN on Si substrate and its application to devices [in Japanese]

EGAWA Takashi

應用物理 81(6), 485-488, 2012-06-10

References (11)
15

Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition

Nguyen Hong-Quan , Chang Edward Yi , Yu Hung-Wei , Trinh Hai-Dang , Dee Chang-Fu , Wong Yuen-Yee , Hsu Ching-Hsiang , Tran Binh-Tinh , Chung Chen-Chen

… A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. …

Applied Physics Express 5(5), 055503-055503-3, 2012-05-25

The Japan Society of Applied Physics References (17)
16

AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy

Kikuchi Ryosuke , Okumura Hironori , Kaneko Mitsuaki , Kimoto Tsunenobu , Suda Jun

… The SPSL was coherently grown on SiC, and its threading dislocation density (TDD) was as low as 8\times 10^{8} cm-2. …

Applied Physics Express 5(5), 051002-051002-3, 2012-05-25

The Japan Society of Applied Physics References (17)
17

Evaluation of GaN substrates for vertical GaN power device applications [in Japanese]

加地徹 , 上杉勉

電子情報通信学会技術研究報告 : 信学技報 112(32), 53-56, 2012-05-17
18

Evaluation of GaN substrates for vertical GaN power device applications [in Japanese]

加地徹 , 上杉勉

電子情報通信学会技術研究報告 : 信学技報 112(33), 53-56, 2012-05-17
19

Evaluation of GaN substrates for vertical GaN power device applications [in Japanese]

加地徹 , 上杉勉

電子情報通信学会技術研究報告 : 信学技報 112(34), 53-56, 2012-05-17
20

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Iwabuchi Takuya , Liu Yuhuai , Kimura Takeshi , Zhang Yuantao , Prasertsuk Kiattiwut , Watanabe Haruna , Usami Noritaka , Katayama Ryuji , Matsuoka Takashi

… The effect of the metastable zincblende (ZB) InN inclusion in the stable wurtzite (WZ) InN on the threading dislocation densities (TDDs) of an InN film grown by pressurized-reactor metalorganic vapor phase epitaxy has been studied by X-ray diffraction measurements. …

Jpn J Appl Phys 51(4), 04DH02-04DH02-4, 2012-04-25

The Japan Society of Applied Physics

Search Results:　 1-20 of 267

Related Authors

Related Journals

Search Results: 1-20 of 267

Related Authors

Related Journals

Search Results:　 1-20 of 267