Search Results:　 1-20 of 1267

Kondo Kenji , Kaiju Hideo , Ishibashi Akira

… The calculation is performed for the thickness dependence and incident angle dependence of Kerr rotation and ellipticity. … We have measured the thickness dependence of Kerr rotation at a wavelength of 405 nm for both Ni75Fe25 and Fe thin films on PEN organic substrates. …

Jpn J Appl Phys 52(1), 013001-013001-5, 2013-01-25

The Japan Society of Applied Physics

Watanabe Naoki , Kimoto Tsunenobu , Suda Jun

… The temperature dependence of the refractive indices of 4H-SiC, GaN, and AlN were determined in a wavelength range from the near band edge (392 nm for 4H-SiC, 367 nm for GaN, and 217 nm for AlN) to infrared (1700 nm) and a temperature range from room temperature to 500 °C. … Near the band-edge region, the temperature dependence of the refractive index mainly originates from the temperature change of the bandgap. …

Jpn J Appl Phys 51(11), 112101-112101-4, 2012-11-25

The Japan Society of Applied Physics

猪川 洋 , 佐藤 弘明 , 小野 篤史 他

映像情報メディア学会技術報告 36(50), 27-31, 2012-11-00

Chiu Chih-Wei , Shyu Feng-Lin , Lin Ming-Fa , Gumbs Godfrey , Roslyak Oleksiy

… These plasmons are isotropic within the plane in the long wavelength limit. … They include q_{\|}- and \phi-dependence and \pi-plasmon bandwidth. …

J Phys Soc Jpn 81(10), 104703-104703-7, 2012-10-15

The Physical Society of Japan

HAYASE Kazuya , NISHITANI Tomohiro , MEGURO Takashi

… From the dependence of quantum yield of the p-GaN photocathode on excitation wavelength, the quantum yield spectrum rapidly increased around the band gap of GaN as expected. …

IEEJ Transactions on Electronics, Information and Systems 132(8), 1261-1264, 2012-08-01

J-STAGE CrossRef References (6)

Ishida Shutaro , Nishizawa Norihiko , Kitatsuji Masashi , Ohshima Hiroyoshi , Hasegawa Yoshinori , Matsushima Miyoko , Kawabe Tsutomu

… The wavelength dependence of the light source was discussed for the observation of fine structure and imaging contrast. …

Jpn J Appl Phys 51(4), 047001-047001-7, 2012-04-25

The Japan Society of Applied Physics

Nakahama Masanori , Sano Hayato , Nakata Norihiko , Matsutani Akihiro , Koyama Fumio

… The modeling result shows a giant wavelength--temperature dependence of over 3.5 nm/K. … The fabricated device exhibits a temperature dependence of 0.79 nm/K, which is 10 times larger than that of conventional vertical cavity surface emitting lasers (VCSELs). …

Jpn J Appl Phys 51(4), 040209-040209-3, 2012-04-25

The Japan Society of Applied Physics

Suda Kayo , Terazima Masahide , Kimura Yoshifumi

… Excitation wavelength dependence of photo-induced intramolecular excited state proton transfer reaction of 4′-N,N-diethylamino-3-hydroxyflavone in various liquids has been investigated by steady-state and time-resolved fluorescence measurements. … It was found that the relative fluorescence intensity of the tautomer excited state to that of the normal excited state significantly decreases in ionic liquids with changing the excitation wavelength from 380 to 470 nm. …

Chemical Physics Letters 531, 70-74, 2012-04-00

IR CrossRef

Nakaoka Toshihiro , Tamura Yugo , Miyazawa Toshiyuki , Watanabe Katsuyuki , Ota Yasutomo , Iwamoto Satoshi , Arakawa Yasuhiko

… We demonstrate photon antibunching from a wavelength controlled quantum dot single-photon source with a side gate. … The photoluminescence peaks from the quantum dots embedded in the side-gate structure are clearly identified as a neutral exciton and a neutral biexciton by the studies of excitation-power dependence, polarization dependence, and photon correlation. …

Jpn J Appl Phys 51(2), 02BJ05-02BJ05-3, 2012-02-25

The Japan Society of Applied Physics