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1

Characterization and Mechanical Properties of Ti--Al--Cr--N Nanocomposite Coatings Deposited by Closed Field Unbalanced Middle Frequency Magnetron Sputtering

Zou Changwei , Zhang Jun , Xie Wei , Shao Lexi , Fu DeJun

… Ti--Al--Cr--N coatings, characterized by a nanocomposite comprising nano-sized TiN crystallites embedded in amorphous AlN or CrN matrix, could be successfully synthesized on Si(111) and WC--Co cemented carbide substrates by a closed field unbalanced middle frequency magnetron sputtering method. …

Jpn J Appl Phys 50(12), 125806-125806-5, 2011-12-25

The Japan Society of Applied Physics
2

Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

Wang Z. P. , Morimoto Akiharu , Kawae Takeshi , Ito H. , Masugata Katsumi

… Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLD) in nitrogen (N2) environment. … The AlN preferential orientation changes from (002) to (100) with increasing N2 pressure. …

Physics Letters, Section A: General, Atomic and Solid State Physics 375(33), 3007-3011, 2011-08-01

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3

Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET

SHIH Hong-An , KUDO Masahiro , AKABORI Masashi , SUZUKI Toshi-kazu

… AlN amorphous films were prepared by RF magnetron sputtering, and applied to the AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) as a gate insulator. … X-ray photoelectron spectroscopy (XPS) was used to characterize the AlN films, showing their chemical bonds and the bandgap by Nls electron energy loss spectroscopy. … These results support a possibility of sputtered amorphous AlN as a gate insulator. …

IEICE technical report. Electron devices 111(167), 13-16, 2011-07-22

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4

Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering

Hajakbari Fatemeh , Larijani Majid Mojtahedzadeh , Ghoranneviss Mahmood , Aslaninejad Morteza , Hojabri Alireza

… The structural and optical properties of aluminum nitride (AlN) films deposited on glass and silicon substrates by single ion beam sputtering technique have been investigated. … The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the amorphous phase of AlN. …

Jpn J Appl Phys 49(9), 095802-095802-6, 2010-09-25

The Japan Society of Applied Physics
5

Synthesis of nitrides and silicon carbide using sodium

YAMANE Hisanori

… AlN powder was prepared above the Al melting temperature of 932 K. … β-type SiC powder and porous bulks were prepared by reaction of Si and fullerene with Na or Si and amorphous carbon with Na at 1000 K. …

Journal of the Ceramic Society of Japan 117(1369), 1021-1027, 2009-09-01

J-STAGE CrossRef References (54)
6

Oxidation of aluminum nanoclusters

Campbell Timothy J. , Aral Gurcan , Ogata Shuji , Kalia Rajiv K. , Nakano Aiichiro , Vashishta Priya , オガタシュウジ , 尾形修司

… An amorphous oxide layer of thickness ?40 A is formed after 466 ps, in good agreement with experiments. … Through detailed analyses of the trajectories of O atoms and their formation of O Aln structures, we propose a three-step process of oxidative percolation that explains deceleration of oxide growth in the canonical ensemble. …

PHYSICAL REVIEW B 71(20), 205413-1-205413-14, 2005-05-26

IR CrossRef
7

Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering

Saito Kunio , Ono Toshiro , Shimada Masaru , Shigekawa Naoteru , Enoki Takatomo

… Amorphous AlN films deposited by sputtering using electron cyclotron resonance (ECR) plasma were used to form AlN/n-InP metal–insulator–semiconductor diodes. … The AlN films were deposited without substrate heating. …

Jpn J Appl Phys 44(1A), 334-342, 2005-01-15

The Japan Society of Applied Physics References (19) Cited by (1)
8

Electroless Copper/Nickel Films Deposited on AlN Substrates

Liang Muh-Wang , Hsieh Tsung-Eong , Chen Chi-Chin , Hung Yuan-Te

… In this work, we studied the application of electroless copper/nickel (Cu/Ni) films deposited on aluminum nitride (AlN) substrates to high-frequency power GaAs device packaging. … Experimental results showed metal films deposited on polished AlN surfaces possess a flatter surface, a finer grain structure, and a lower resistivity than those on unpolished surfaces. …

Jpn J Appl Phys 43(12), 8258-8266, 2004-12-15

The Japan Society of Applied Physics References (20)
9

Preparation of Ti-Al-Si-N Nano-composite Films by Reactive Sputtering [in Japanese]

NOSE Masateru , SUZUKI Hirofumi , OKUMURA Yoshio , HONBO Eiji , MAE Takehiko , ANADA Hiroshi , NOGI Kiyoshi

… XRD patterns of Ti-Al-Si-N films suggested two phases, the cubic B1 NaCl type structure and an amorphous phase, were presented in the film. … XRD and XPS results indicate that the Ti-Al-Si-N films have a nano-composite structure consisting of nanocrystalline Ti(Al)N and amorphous phase. … These results could be attributed to the segregation of h-AlN phase from the Ti-Al-Si-N nano-composite films. …

Journal of the Japan Society of Powder and Powder Metallurgy 51(11), 802-807, 2004-11-15

J-STAGE CrossRef References (15) Cited by (1)
10

Formation Mechanism of Aluminum Nitride Powder via Organic Precursor Prepared from Anhydrous Aluminum Chloride and Ethylenediamine

Masataka KANO , Takeo HYODO , Yasuhiro SHIMIZU , Makoto EGASHIRA

… Synthesis of AlN powder via an organic precursor prepared from anhydrous aluminum chloride and ethylenediamine has been investigated to establish a simple and low-cost process. … Any crystallized compounds were not formed from the resulting organic precursor after calcination at 800℃ for 5 h in flowing dry N_2,but formation of amorphous AlN was suggested from the FT-IR spectroscopic analysis. …

Reports of the Faculty of Engineering, Nagasaki University 32(59), 185-190, 2002-07-00

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11

Formation of Solid Solution(Al_2 OC)_<1-x>(AlN)_x and Its Application in Spinel-Carbon Clinker Preparation

FAGHIHI-SANI Mohammad-Ali , YAMAGUCHI Akira

… Among solid solutions(Al_2OC)_<1-x>(AlN)_x, x=0-1, it has been found that(Al_2OC)_<0.5>(AlN)_<0.5> … In this regard, a homogeneous solid solution(Al_2OC)_<0.5>(AlN)_<0.5> … was obtained through heating of a compact, including Al_2O_3, Al, AlN and graphite, at 1700℃ for 5 h in Ar atmosphere and rapid cooling down to 1400℃. … In comparing with AlN, it showed better hydration resistance. …

Journal of the Ceramic Society of Japan 110(1277), 6-11, 2002-01-01

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12

Crystallization under electropulsing suggesting a resonant collective motion of many atoms and modification of thermodynamic parameters in amorphous alloys

Mizubayashi Hiroshi , Kameyama Natsuki , Hao Ting , Tanimoto Hisanori , 水林博

… For melt-spun amorphous (a-)Cu50Ti50 and a-Pd80Si20, crystallization under electropulsing was studied by means of the discharge of a condenser with initial current density id0 of the order of 109 A/m2 and decay time τ in between 2 and 0.1 ms, where a specimen was sandwiched by AlN/BN substrates to minimize an effect of joule heating. …

Phys. Rev. B 64(5), 054201, 2001-07-00

IR CrossRef Cited by (3)
13

Microstructural Observation of Silicon Nitride Ceramics Sintered with Addition of Titania

YANO Toyohiko , TATAMI Junichi , KOMEYA Katsutoshi , MEGURO Takeshi

… Sintering additives were 5 mass%Y_2O_3, 3 mass%Al_2O_3 and 3 mass%AlN. … The grain-boundary phase was mainly an amorphous phase containing Si, Y, Al and O, but it did not contain Ti. …

Journal of the Ceramic Society of Japan 109(1269), 396-400, 2001-05-01

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14

Pulsed Power Technology and Its Applications at Extreme Energy-Density Research Institute (EDI), Nagaoka

Yatsui Kiyoshi , Jiang Weihua , Suematsu Hisayuki , Harada Nobuhiro , Imada Go , Suzuki Tsuneo , Kinemuchi Yoshiaki , Yang Sung-Chae

… The AlN solubility limit was found to be 77 at.% AlN@. … The hardness of the films increases with $x$ up to 0.75, and decreases rapidly due to their being amorphous in structure. …

Jpn J Appl Phys 40(2B), 921-929, 2001-02-28

The Japan Society of Applied Physics References (36) Cited by (1)
15

Preparation of Al–O–N Films by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

Goto Takashi , Zhang Wei , Hirai Toshio

… The Al–O–N films were composed mainly of a mixture of Al2O3 and AlN. … The Al–O–N films contained a (001)-oriented hexagonal AlN phase at R=0.025, and the films were amorphous at R>0.05. …

Jpn J Appl Phys 38(6A), 3668-3674, 1999-06-15

The Japan Society of Applied Physics
16

Preparation of Al-O-N Films by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

GOTO Takashi , ZHANG Wei , HIRAI Toshio

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 38(6A), 3668-3674, 1999-06-15

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17

Preparation Conditions of rf-Sputter Deposited Fe/AlN Multilayered Thin Films and Their Properties [in Japanese]

KIKKAWA Shinichi , ENOMOTO Shinsuke , TAKAHASHI Masao , HIROTA Ken , YAMAGUCHI Osamu

… Formation of iron nitride was observed on Fe metal film rf-sputter deposited on polycrystalline AIN substrate as already reported on Fe metal/amorphous AIN multilayer. …

Journal of the Japan Society of Powder and Powder Metallurgy 45(3), 253-256, 1998-03-15

J-STAGE CrossRef References (5)
18

Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition

SOH Ju-Won , KIM Jin-Hyeok , LEE Won-Jong

… Highly c-axis oriented AlN films were fabricated on various substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a substrate temperature of 500℃. … The degree of c-axis orientation depends sensitively on the substrate: the standard deviations o of AlN(0002) rocking curve peaks are 4.9°, 4.8°, 4.3°, 4.0°and 1.5°on SiO_2, Si_3N_4, Si(100), Si(111) and α-Al_2O_3(0001) substrates, respectively. …

Japanese journal of applied physics. Pt. 2, Letters 35(11B), L1518-L1520, 1996-11-15

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19

Magnetic and Electrial Properties of α-FeN_x Pariticles Dispersed in AlN Thin Films Fabricated by a Two-Facing-Target DC Reactive Method [in Japanese]

TENG Lai Li , NITTONO Osamu

… This Paper describes the fablication of AlN tin films containing iron and iron nitride particles, and magnetic and electrical properties of such films. … X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annerling for 5 h both AlN and bcc-Fe/bct-FeN<SUB>x</SUB> … Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. …

SHINKU 39(4), 159-164, 1996-04-20

J-STAGE CrossRef References (20)
20

Effects of SiO_2 Type and Additives on the Reaction Products In SiO_2-Al-C-N_2 System [in Japanese]

UCHIYAMA Yasuo , ISODA Hidenori , CHENG Huiming , KOBAYASHI Kazuo

… AlN was formed in the first group that consisted of natural quartz, synthetic quartz and quartz glass. … However, AlN was not formed in the second group that consisted of blue silica gel, white silica gel and cristobalite. … At 2073 K, the reaction products were AlN・Al_2O_3 (spineD and AlN irrespective of the SiO_2 type. …

Journal of the Ceramic Society of Japan 102(1187), 675-679, 1994-07-01

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