Search Results 1-20 of 958

  • Buried structure for increasing fabrication performance of micromaterial by electromigration

    Kimura Yasuhiro , Saka Masumi

    … In the present work, we propose a buried structure, which contributes to significantly decreasing the current for fabricating an Al micromaterial by confining the current flow in the EM technique. … The fabrication performance was evaluated based on the threshold current for fabricating an Al micromaterial using the buried structure and the previous structure with the leakage of current. …

    Jpn. J. Appl. Phys. 55(6S1), 06GH01, 2016-04-18

    JSAP

  • Effect of III–V on insulator structure on quantum well intermixing

    Takashima Seiya , Ikku Yuki , Takenaka Mitsuru , Takagi Shinichi

    … We have also found that the progress of QWI on the III–V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and handle wafers. … We have also found that the progress of QWI on the III–V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and bulk support wafers on which the III–V-OI structure is formed (handle wafers). …

    Jpn. J. Appl. Phys. 55(4S), 04EH13, 2016-03-24

    JSAP

  • Analysis and reduction of leakage current of 2 kV monolithic isolator with wide trench spiral isolation structure

    Takeuchi Yusuke , Kuroda Rihito , Sugawa Shigetoshi

    … In this work, the origin of the leakage current of a highly area-efficient silicon-on-insulator (SOI) monolithic isolator using a spiral trench isolation structure is clarified by experimental and simulation analyses and its reduction method is proposed. … It was found that parasitic MOSFET inversion and accumulation channels formed at the SOI and buried oxide (BOX) interface are the origins of leakage current. …

    Jpn. J. Appl. Phys. 55(4S), 04EF07, 2016-03-14

    JSAP

  • Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure

    Kim Hyungjin , Park Jungjin , Kwon Min-Woo , Hwang Sungmin , Park Byung-Gook

    … Control of threshold voltage (V<inf>T</inf>) by asymmetric dual-gate structure is investigated. … It is noteworthy that this method can be used without ultra thin buried oxide (BOX) structure and additional biasing scheme. …

    Jpn. J. Appl. Phys. 55(4S), 04ED01, 2016-03-01

    JSAP

  • 2H13 Poroelastic Analysis of Interstitial Fluid Flow in a Lamellar Osteon under Cyclic Loading  [in Japanese]

    KAMEO Yoshitaka , OOTAO Yoshihiro , ISHIHARA Masayuki

    … Osteon, an anatomical unit of cortical bone, is a hollow cylindrical structure that is composed of multiple lamellae concentrically arranged around a haversian canal. … In order to identify the effects of variations in material properties resulting from the lamellar structure, we investigated the interstitial fluid flow in a single lamellar osteon subjected to cyclic loading based on poroelasticity, particularly focusing on variations in the permeability. …

    バイオエンジニアリング講演会講演論文集 2016(28), "2H13-1"-"2H13-4", 2016-01-09

    CiNii Fulltext PDF - Limited 

  • Layer Structure of the χ-phase Film in the Re-Nb System Formed on Nb Substrate Induced by Cr-Pack Cementation  [in Japanese]

    Saito Shigeru , Takashima Toshiyuki , Miyama Katsumi , Narita Toshio

    …  Formation of diffusion-barrier coating system with two-layered structure has been developed. … Cr-pack cementation was conducted under vacuum of 10−5 Pa at 1300℃ and 1400℃ for 6 min and 1 h, respectively, using an Al2O3 crucible in which the specimens were buried in a powder mixture of pure Cr and Al2O3. … The layer structure of the film on the Nb substrate after the Cr-pack cementation was discussed on the basis of composition paths plotted in the Re-Cr-Nb phase diagram. …

    Journal of the Japan Institute of Metals 80(6), 350-354, 2016

    J-STAGE CrossRef

  • Layer Structure of the χ-phase Film in the Re-Nb System Formed on Nb Substrate Induced by Cr-Pack Cementation  [in Japanese]

    Saito Shigeru , Takashima Toshiyuki , Miyama Katsumi , Narita Toshio

    …  Formation of diffusion-barrier coating system with two-layered structure has been developed. … Cr-pack cementation was conducted under vacuum of 10−5 Pa at 1300℃ and 1400℃ for 6 min and 1 h, respectively, using an Al2O3 crucible in which the specimens were buried in a powder mixture of pure Cr and Al2O3. … The layer structure of the film on the Nb substrate after the Cr-pack cementation was discussed on the basis of composition paths plotted in the Re-Cr-Nb phase diagram. …

    Journal of the Japan Institute of Metals advpub(0), 2016

    J-STAGE CrossRef

  • Centrifuge model tests and elastic FE analysis on seismic behavior of buried culverts

    Tohda Jun , Yoshimura Hiroshi , Maruyoshi Katsunori

    … Sixteen 1/30-scaled static centrifuge model tests and an elastic FE analysis were conducted to investigate the seismic behavior of buried culverts. … In the tests, four model culverts (arch-type, box-type, and circular-types with different flexibilities) were buried in different types of model grounds. …

    Japanese Geotechnical Society Special Publication 2(43), 1540-1545, 2016

    J-STAGE CrossRef

  • <i>In Vitro</i> Selected Macrocyclic Peptides: Tools for Regulating the Conformational Freedom of Transmembrane Proteins  [in Japanese]

    Hipolito Christopher John , Nishio Kosuke , Suga Hiroaki

    … Elucidation of the three-dimensional structure of a membrane protein provides a greater understanding of its function and mechanisms. … The PfMATE-binding macrocyclic peptides MaD3S and MaD5 bind to the surfaces buried in the center channel of the transporters. …

    YAKUGAKU ZASSHI 136(2), 191-196, 2016

    J-STAGE Ichushi Web CrossRef

  • Model-Based Compressive Sensing Applied to Landmine Detection by GPR

    KARLINA Riafeni , SATO Motoyuki

    … We demonstrate the techniques performance by applying it to detection of buried landmines. … This block structure can be used in the model based CS processing for imaging the buried landmine. …

    IEICE Trans. Electron. E99.C(1), 44-51, 2016

    J-STAGE CrossRef

  • Analysis and Reduction of Floating Diffusion Capacitance Components and Application to High Sensitivity and High Full Well Capacity CMOS Image Sensor  [in Japanese]

    KUSUHARA Fumiaki , WAKASHIMA Shunichi , NASUNO Satoshi , KURODA Rihito , SUGAWA Shigetoshi

    フローティングディフュージョン(FD)容量(C_<FD>)成分の解析と低減技術,およびそれらを適用して試作した高感度・高飽和CMOSイメージセンサについて述べる.テストパターンを用いたC_<FD>成分抽出結果を解析し,C_<FD>を極小化する非LDD・低濃度拡散層構造を提案した.横型オーバーフロー蓄積容量(LOFIC),デュアルゲイン列アンプ,浮遊容量負荷読み出 …

    ITE Technical Report 39(35), 53-56, 2015-09-11

    CiNii Fulltext PDF - Subscription 

  • 9007 Research on the buried structure in the mound at the center of ancient Khmer city, ISANAPURA  [in Japanese]

    SHIMODA Ichita , NAKAGAWA Takeshi

    Summaries of technical papers of annual meeting 2015(建築歴史・意匠), 13-14, 2015-09-04

    CiNii Fulltext PDF - Subscription 

  • Expansion of the difference-field boundary element method for numerical analyses of various local defects in periodic surface-relief structures

    Sugisaka Jun-ichiro , Yasui Takashi , Hirayama Koichi , 杉坂 純一郎 , 安井 崇 , 平山 浩一

    … We expand the difference-field boundary element method (DFBEM) to calculate wave scattering from a variety of local periodic structure defects. … The DFBEM is a numerical method for simulating the diffraction caused by a periodic surface-relief structure with a defect. …

    Journal of the Optical Society of America A 32(5), 751-763, 2015-05

    IR CrossRef

  • Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes

    Kishida Ryo , Oshima Azusa , Yabuuchi Michitarou , Kobayashi Kazutoshi

    … In particular, it is difficult to relieve PID in silicon-on-insulator (SOI) because it contains buried oxide (BOX) layers. … We measure frequencies of ring oscillators with an antenna structure on a single stage. …

    Jpn. J. Appl. Phys. 54(4S), 04DC19, 2015-03-25

    JSAP

  • High-Speed LiTaO_3 Electro-Optic Polarization Modulator Using a Buried Channel Optical Waveguide  [in Japanese]

    YAO Xinyuan , MURATA Hiroshi , OKAMURA Yasuyuki

    LiTaO_3の埋め込み型チャネル光導波路を用いた高速電気光学偏光変調器について述べる.ポッケルス効果を用いた偏光変調では,直交2偏波の結合を利用するため,直交2偏波間の位相整合が重要である.これまでに,二重周期分極反転構造を施したNi拡散導波路を用いた偏光変調デバイスを報告したが,光導波路が金属拡散導波路のため,TEモードの伝搬損失が大きく,効率のよい変調が困難であった.そこで,光導波路に埋め込 …

    Technical report of IEICE. LQE 114(432), 261-264, 2015-01-22

    CiNii Fulltext PDF - Limited 

  • High-Speed LiTaO_3 Electro-Optic Polarization Modulator Using a Buried Channel Optical Waveguide  [in Japanese]

    YAO Xinyuan , MURATA Hiroshi , OKAMURA Yasuyuki

    LiTaO_3の埋め込み型チャネル光導波路を用いた高速電気光学偏光変調器について述べる.ポッケルス効果を用いた偏光変調では,直交2偏波の結合を利用するため,直交2偏波間の位相整合が重要である.これまでに,二重周期分極反転構造を施したNi拡散導波路を用いた偏光変調デバイスを報告したが,光導波路が金属拡散導波路のため,TEモードの伝搬損失が大きく,効率のよい変調が困難であった.そこで,光導波路に埋め込 …

    電子情報通信学会技術研究報告. EST, エレクトロニクスシミュレーション 114(433), 261-264, 2015-01-22

    CiNii Fulltext PDF - Limited 

  • High-Speed LiTaO_3 Electro-Optic Polarization Modulator Using a Buried Channel Optical Waveguide  [in Japanese]

    YAO Xinyuan , MURATA Hiroshi , OKAMURA Yasuyuki

    LiTaO_3の埋め込み型チャネル光導波路を用いた高速電気光学偏光変調器について述べる.ポッケルス効果を用いた偏光変調では,直交2偏波の結合を利用するため,直交2偏波間の位相整合が重要である.これまでに,二重周期分極反転構造を施したNi拡散導波路を用いた偏光変調デバイスを報告したが,光導波路が金属拡散導波路のため,TEモードの伝搬損失が大きく,効率のよい変調が困難であった.そこで,光導波路に埋め込 …

    電子情報通信学会技術研究報告. MWP, マイクロ波・ミリ波フォトニクス 114(434), 261-264, 2015-01-22

    CiNii Fulltext PDF - Limited 

  • High-Speed LiTaO_3 Electro-Optic Polarization Modulator Using a Buried Channel Optical Waveguide  [in Japanese]

    YAO Xinyuan , MURATA Hiroshi , OKAMURA Yasuyuki

    LiTaO_3の埋め込み型チャネル光導波路を用いた高速電気光学偏光変調器について述べる.ポッケルス効果を用いた偏光変調では,直交2偏波の結合を利用するため,直交2偏波間の位相整合が重要である.これまでに,二重周期分極反転構造を施したNi拡散導波路を用いた偏光変調デバイスを報告したが,光導波路が金属拡散導波路のため,TEモードの伝搬損失が大きく,効率のよい変調が困難であった.そこで,光導波路に埋め込 …

    Technical report of IEICE. OPE 114(431), 261-264, 2015-01-22

    CiNii Fulltext PDF - Limited 

  • High-Speed LiTaO_3 Electro-Optic Polarization Modulator Using a Buried Channel Optical Waveguide  [in Japanese]

    YAO Xinyuan , MURATA Hiroshi , OKAMURA Yasuyuki

    LiTaO_3の埋め込み型チャネル光導波路を用いた高速電気光学偏光変調器について述べる.ポッケルス効果を用いた偏光変調では,直交2偏波の結合を利用するため,直交2偏波間の位相整合が重要である.これまでに,二重周期分極反転構造を施したNi拡散導波路を用いた偏光変調デバイスを報告したが,光導波路が金属拡散導波路のため,TEモードの伝搬損失が大きく,効率のよい変調が困難であった.そこで,光導波路に埋め込 …

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク 114(430), 261-264, 2015-01-22

    CiNii Fulltext PDF - Limited 

  • Surface-oxide stress induced band-structure modulation in two-dimensional Si layers

    Mizuno Tomohisa , Suzuki Yuhya , Nagamine Yoshiki , Nakahara Yuhta , Nagata Yuhsuke , Aoki Takashi , Maeda Tatsuro

    … We experimentally studied an impact of the surface oxide layer on quantum confinement effects (QCE) in Si quantum well (SQW) structures (surface-oxide/two-dimensional-Si/buried-oxide) with various surface oxide layer thickness T<inf>OX</inf>on silicon-on-insulator (SOI) substrate, by UV-Raman spectroscopy, photoluminescence (PL) method, and two-dimensional (2D) stress simulator. …

    Jpn. J. Appl. Phys. 54(4S), 04DC02, 2015-01-13

    JSAP

Page Top