検索結果 977件中 1-20 を表示

  • Material structure of two-/three-dimensional Si–C layers fabricated by hot-C

    Mizuno Tomohisa , Omata Yuhsuke , Nagamine Yoshiki , Aoki Takashi , Sameshima Toshiyuki

    … 162 [N<inf>L</inf>is the atomic layer number of Si<inf>1−</inf><inf>Y</inf>C<inf>Y</inf>)] on buried oxide (BOX), which were fabricated by hot-C<sup>+</sup>-ion implantation into a (100) silicon-on-insulator (SOI) substrate before an oxidation process. …

    Jpn. J. Appl. Phys. 56(4S), 04CB03, 2017-03-08

    応用物理学会

  • The Development of a Novel Bone Filler, Titanium Wire Ball

    Tsukamoto Ichiro , Akagi Masao

    … The structure is simple: a 0.14-mm-diameter pure titanium wire was rolled and folded with both ends buried in the central portion, resulting in a ball of 4-mm diameter with 83% internal void ratio, having 300-500 μm internal gaps. …

    Acta Medica Okayama 71(1), 19-24, 2017-02

    機関リポジトリ DOI

  • Crystal structure of an IclR homologue from Microbacterium sp. strain HM58-2

    Akiyama Tomonori , Yamada Yusuke , Takaya Naoki , Ito Shinsaku , Sasaki Yasuyuki , Yajima Shunsuke

    … Here, the crystal structure of an IclR homologue (Mi-IclR) from Microbacterium sp. … CRANK2 from the CCP4 suite successfully phased and modelled the complete structure of a homotetramer composed of 1000 residues in an asymmetric unit, and the model was refined to 2.1 Å resolution. … The overall structure of Mi-IclR shared the same domain combination as other known IclR structures, but the relative geometry between the DBD and SBD differs. …

    Acta Crystallographica Section F Structural Biology Communications 73(1), 16-23, 2017-01

    機関リポジトリ DOI

  • Factor X Deficiency with Heterozygous Mutations of Novel p.G435S and Known p.G244R in a Patient Presenting with Severe Umbilical Hemorrhage

    MATSUO YOKO , MIZUOCHI TATSUKI , MITSUO MIHO , NAKAGAWA SHINICHIRO , OZONO SHUICHI , UEDA KOICHIRO , SOGABE YOKO , SEKI RITSUKO , SOEJIMA KENJI , OKAMURA TAKASHI , YAMASHITA YUSHIRO

    … β-strand and buried in the back of the catalytic pocket. … Therefore, the substitution to serine was expected to disrupt this structure. …

    The Kurume Medical Journal, 2017

    DOI

  • 地中レーダによるチャシ跡の探査研究

    泉 吉紀 , 酒井 英男 , 中村 和之 , 斉藤 大朋

    … We conducted ground penetrating radar survey on the Chashi Sites of Shibecharigawa basin of Shinhidaka in Hokkaido, with the purpose of investigating the internal structure of the Chashi. … In the case that it was a buried ditch, Shibechari-Chashi would come to have the largest area in Hokkaido. … Also, the anomaly detected on the west side was thought to be the reaction of the buried ditch. …

    函館工業高等専門学校紀要 51(0), 68-73, 2017

    DOI

  • Evaluation of Device Parameters for Membrane Lasers on Si Fabricated with Active-Layer Bonding Followed by Epitaxial Growth

    FUJII Takuro , TAKEDA Koji , KANNO Erina , HASEBE Koichi , NISHI Hidetaka , YAMAMOTO Tsuyoshi , KAKITSUKA Takaaki , MATSUO Shinji

    … We used direct bonding to transfer this active epitaxial layer to SiO<sub>2</sub>/Si substrate, followed by epitaxial growth of InP to fabricate a buried-heterostructure (BH) on Si. … The lateral p-i-n structure was formed by thermal diffusion of Zn and ion implantation of Si. …

    IEICE Transactions on Electronics E100.C(2), 196-203, 2017

    DOI

  • 栃木県足尾銅山跡地のシカ採食下にあるニセアカシア人工林の林分構造と更新

    髙橋 達也 , 逢沢 峰昭 , 小金澤 正昭 , 大久保 達弘

    宇都宮大学農学部演習林報告 (52), 15-23, 2016-05

    機関リポジトリ

  • Buried structure for increasing fabrication performance of micromaterial by electromigration

    Kimura Yasuhiro , Saka Masumi

    … In the present work, we propose a buried structure, which contributes to significantly decreasing the current for fabricating an Al micromaterial by confining the current flow in the EM technique. … The fabrication performance was evaluated based on the threshold current for fabricating an Al micromaterial using the buried structure and the previous structure with the leakage of current. …

    Jpn. J. Appl. Phys. 55(6S1), 06GH01, 2016-04-18

    応用物理学会

  • Effect of III–V on insulator structure on quantum well intermixing

    Takashima Seiya , Ikku Yuki , Takenaka Mitsuru , Takagi Shinichi

    … We have also found that the progress of QWI on the III–V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and handle wafers. … We have also found that the progress of QWI on the III–V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and bulk support wafers on which the III–V-OI structure is formed (handle wafers). …

    Jpn. J. Appl. Phys. 55(4S), 04EH13, 2016-03-24

    応用物理学会

  • Analysis and reduction of leakage current of 2 kV monolithic isolator with wide trench spiral isolation structure

    Takeuchi Yusuke , Kuroda Rihito , Sugawa Shigetoshi

    … In this work, the origin of the leakage current of a highly area-efficient silicon-on-insulator (SOI) monolithic isolator using a spiral trench isolation structure is clarified by experimental and simulation analyses and its reduction method is proposed. … It was found that parasitic MOSFET inversion and accumulation channels formed at the SOI and buried oxide (BOX) interface are the origins of leakage current. …

    Jpn. J. Appl. Phys. 55(4S), 04EF07, 2016-03-14

    応用物理学会

  • Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure

    Kim Hyungjin , Park Jungjin , Kwon Min-Woo , Hwang Sungmin , Park Byung-Gook

    … Control of threshold voltage (V<inf>T</inf>) by asymmetric dual-gate structure is investigated. … It is noteworthy that this method can be used without ultra thin buried oxide (BOX) structure and additional biasing scheme. …

    Jpn. J. Appl. Phys. 55(4S), 04ED01, 2016-03-01

    応用物理学会

  • 2H13 繰返し荷重を受ける層板状骨単位内部における間質液流れの多孔質弾性解析

    亀尾 佳貴 , 大多尾 義弘 , 石原 正行

    … Osteon, an anatomical unit of cortical bone, is a hollow cylindrical structure that is composed of multiple lamellae concentrically arranged around a haversian canal. … In order to identify the effects of variations in material properties resulting from the lamellar structure, we investigated the interstitial fluid flow in a single lamellar osteon subjected to cyclic loading based on poroelasticity, particularly focusing on variations in the permeability. …

    バイオエンジニアリング講演会講演論文集 2016(28), "2H13-1"-"2H13-4", 2016-01-09

  • 空中磁気データによる地熱地域の3次元地下イメージング解析

    大熊 茂雄 , 中塚 正

     秋田焼山は仙岩地熱地域北西端に位置する第四紀火山であり,周辺の山麓部で地熱開発が行われ現在複数の地熱発電所が稼働中である。当該地域では新エネルギー・産業技術総合開発機構 (NEDO) や地質調査所(現産業技術総合研究所)等によって地熱調査に係わる諸調査が行われ,空中磁気データの解析も行われた。例えば,かつて著者等は付近で行われたボーリング調査に伴う岩石磁気測定結果や地質断面図を拘束条件 …

    物理探査 69(1), 41-51, 2016

    DOI

  • Composition and evaluation of single-layer electrode proton exchange membrane fuel cells for mass transfer analysis

    SUZUKI Takahiro , MIYAUCHI Toshimitsu , HAYASE Masanori , TSUSHIMA Shohji

    … Finding optimum microchannel and SLE structure by evaluating the cell performance under a rib and channel, respectively, is necessary. … The reaction area was determined by the anode electrode, which was buried in the microchannel. …

    Journal of Thermal Science and Technology 11(3), JTST0043-JTST0043, 2016

    DOI

  • Cr 拡散浸透処理による Nb 基材上に形成した Re-Nb 系 χ 相皮膜の層構造

    齋藤 繁 , 高島 敏行 , 見山 克己 , 成田 敏夫

    …  Formation of diffusion-barrier coating system with two-layered structure has been developed. … Cr-pack cementation was conducted under vacuum of 10−5 Pa at 1300℃ and 1400℃ for 6 min and 1 h, respectively, using an Al2O3 crucible in which the specimens were buried in a powder mixture of pure Cr and Al2O3. … The layer structure of the film on the Nb substrate after the Cr-pack cementation was discussed on the basis of composition paths plotted in the Re-Cr-Nb phase diagram. …

    日本金屬學會誌 80(6), 350-354, 2016

    J-STAGE DOI

  • Cr 拡散浸透処理による Nb 基材上に形成した Re-Nb 系 χ 相皮膜の層構造

    齋藤 繁 , 高島 敏行 , 見山 克己 , 成田 敏夫

    …  Formation of diffusion-barrier coating system with two-layered structure has been developed. … Cr-pack cementation was conducted under vacuum of 10−5 Pa at 1300℃ and 1400℃ for 6 min and 1 h, respectively, using an Al2O3 crucible in which the specimens were buried in a powder mixture of pure Cr and Al2O3. … The layer structure of the film on the Nb substrate after the Cr-pack cementation was discussed on the basis of composition paths plotted in the Re-Cr-Nb phase diagram. …

    日本金屬學會誌 advpub(0), 2016

    J-STAGE DOI

  • Centrifuge model tests and elastic FE analysis on seismic behavior of buried culverts

    Tohda Jun , Yoshimura Hiroshi , Maruyoshi Katsunori

    … Sixteen 1/30-scaled static centrifuge model tests and an elastic FE analysis were conducted to investigate the seismic behavior of buried culverts. … In the tests, four model culverts (arch-type, box-type, and circular-types with different flexibilities) were buried in different types of model grounds. …

    Japanese Geotechnical Society Special Publication 2(43), 1540-1545, 2016

    J-STAGE DOI

  • <i>In Vitro</i> Selected Macrocyclic Peptides: Tools for Regulating the Conformational Freedom of Transmembrane Proteins

    Hipolito Christopher John , 西尾 洸祐 , 菅 裕明

    … Elucidation of the three-dimensional structure of a membrane protein provides a greater understanding of its function and mechanisms. … The PfMATE-binding macrocyclic peptides MaD3S and MaD5 bind to the surfaces buried in the center channel of the transporters. …

    YAKUGAKU ZASSHI 136(2), 191-196, 2016

    J-STAGE 医中誌Web DOI

  • Model-Based Compressive Sensing Applied to Landmine Detection by GPR

    KARLINA Riafeni , SATO Motoyuki

    … We demonstrate the techniques performance by applying it to detection of buried landmines. … This block structure can be used in the model based CS processing for imaging the buried landmine. …

    IEICE Transactions on Electronics E99.C(1), 44-51, 2016

    J-STAGE DOI

  • By a grant from Research Institute for Integrated Science, Kanagawa University : Synthesis of a Thin Buried Oxide Layer by High Temperature Oxygen Implantation in a Silicon Substrate : Effect of High Temperature Implantation

    Hoshino Yasushi , Yachida Gosuke , Saito Yasunao , Nakata Jyoji , 斎藤 保直 , Nakata Jyoji , 中田 穣治

    … We performed O+ ion implantation in silicon substrates at considerably high substrate temperatures (up to 1000°C) to synthesize a silicon-on-insulator (SOI) structure, and investigated the effect of the high-temperature implantation. … We expect that such high-temperature implantation can effectively avoid radiation damage induced in the SOI layer, and simultaneously stabilize the SOI and buried oxide (BOX) layer. …

    Science journal of Kanagawa University 27, 9-14, 2016

    機関リポジトリ

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