[Institutional Fixed-Price Service] Renewal for FY 2012 is now being accepted. (Feb 8, 2012)

Search Results:　 1-20 of 482

1

21aGQ-10 Materials design of transparent electrode for chalcopyrite-based photovoltaic solar cells [in Japanese]

Tani Y. , Sato K. , Katayama-Yoshida H.

Meeting abstracts of the Physical Society of Japan 66(2-4), 967, 2011-08-24

CiNii Fulltext PDF - Paid
2

21aGQ-9 Materials design of In-free chalcopyrite photovoltaic solar cells by co-doping method [in Japanese]

Tani Y. , Sato K. , Katayama-Yoshida H.

Meeting abstracts of the Physical Society of Japan 66(2-4), 967, 2011-08-24

CiNii Fulltext PDF - Paid
3

Growth and characterization of CuInTe2 crystals grown by hot-press method [in Japanese]

Tashiro Ryuichi , Yoshino Kenji , Ikari Tetsuo

Memoirs of the Faculty of Engineering, Miyazaki University 40, 65-70, 2011-07-30
4

Analysis of anisotropic properties of I-III-VI2 compound semiconductor CuInS2 [in Japanese]

Nagaoka Akira , Yoshino Kenji , Ikari Tetsuo

Memoirs of the Faculty of Engineering, Miyazaki University 40, 61-64, 2011-07-30
5

Electrical and optical properties of AgInS2 with I-III-VI2 compound semiconductor [in Japanese]

Tokuda Takahiro , Yoshino Kenji , Ikari Tetuo

Memoirs of the Faculty of Engineering, Miyazaki University 40, 49-54, 2011-07-30
6

First Principles Materials Design of Negative Activation Energy and Transparent Conducting Sulfides in n-Type CuAl1-xSnxS2 and p-Type Cu1-xV\text{CuAlS2

Tani Yoshimasa , Sato Kazunori , Katayama-Yoshida Hiroshi

… Based on ab initio electronic structure calculations of chalcopyrite CuAl1-xSnxS2 (CASS) and Cu1-xV\text{CuAlS2 (CVAS) by the Korringa-Kohn-Rostoker coherent-potential-approximation (KKR-CPA) method within the self-interaction-corrected local density approximation (SIC-LDA), we design a new class of n-type CASS and p-type CVAS transparent conducting sulfides with a negative activation energy (NAE) for application in high-efficiency photovoltaic solar cells (PVSCs). …

Applied Physics Express 4(2), 021201-021201-3, 2011-02-25

The Japan Society of Applied Physics References (14)
7

Long term optical properties of ZnS-AgInS2 and AgInS2-AgGaS2 solid-solution semiconductor nanoparticles dispersed in polymer matrices (Progress towards the development of green sustainable chemistry using photofunctional interfaces)

前田重雄 , 上松太郎 , 土井利浩 [他]

Electrochemistry 79(10), 813-816, 2011-10
8

Photoelectrochemical hydrogen evolution using copper-indium-sulfide nanocrystalline film electrodes (Progress towards the development of green sustainable chemistry using photofunctional interfaces)

天野史章 , 海老名紀廣 , 大谷文章

Electrochemistry 79(10), 804-806, 2011-10
9

Epitaxial growth of chalcopyrite-type CuInS2 films on GaAs(001) substrates by evaporation method with elemental sources (Special issue: Ternary and multinary compounds)

Tsuboi Nozomu , Tamogami Takashi , Kobayashi Satoshi

Japanese journal of applied physics 50(5), 05FB03-1-4, 2011-05
10

Properties analysis of chalcopyrite semiconductor AgGaSe_2 by optical measurement [in Japanese]

Nagaoka Akira , Yoshino Kenji

三元系カルコパイライト型半導体は、多元系という特性のためSiやGeといった元素半導体では得られない有益な物性値を持っている。特に、AgGaSe_2は、バンドギャップ1.8eV、大きな非線形光学係数、赤外域での高い透過率、光吸収係数10_5cm^<-1>オーダーというオプトエレクトロニクスデバイス応用に必要な物性値を持つ。本研究では、半導体物性の重要な項目の一つである欠陥準位と基礎物性値 …

Technical report of IEICE. LQE 110(259), 117-120, 2010-10-21

CiNii Fulltext PDF - Limited References (21)
11

Anisotropic thermal properties of chalcopyrite semiconductor AgGaSe_2 [in Japanese]

Nagaoka Akira , Yoshino Kenji

I-III-VI_2族カルコパイライト型半導体は、太陽電池をはじめ、LEDや非線形光学素子等のオプトエレクトロニクスデバイスに応用が可能である。特にAgGaSe_2結晶は、非線形光学係数が大きく、異方性を持っている。本研究では、AgGaSe_2結晶の異方性を熱物性値の観点からアプローチした。

Technical report of IEICE. LQE 110(259), 113-116, 2010-10-21

CiNii Fulltext PDF - Limited References (6)
12

Properties analysis of chalcopyrite semiconductor AgGaSe_2 by optical measurement [in Japanese]

Nagaoka Akira , Yoshino Kenji

三元系カルコパイライト型半導体は、多元系という特性のためSiやGeといった元素半導体では得られない有益な物性値を持っている。特に、AgGaSe_2は、バンドギャップ1.8eV、大きな非線形光学係数、赤外域での高い透過率、光吸収係数10_5cm^<-1>オーダーというオプトエレクトロニクスデバイス応用に必要な物性値を持つ。本研究では、半導体物性の重要な項目の一つである欠陥準位と基礎物性値 …

Technical report of IEICE. OPE 110(258), 117-120, 2010-10-21

CiNii Fulltext PDF - Limited References (21)
13

Anisotropic thermal properties of chalcopyrite semiconductor AgGaSe_2 [in Japanese]

Nagaoka Akira , Yoshino Kenji

I-III-VI_2族カルコパイライト型半導体は、太陽電池をはじめ、LEDや非線形光学素子等のオプトエレクトロニクスデバイスに応用が可能である。特にAgGaSe_2結晶は、非線形光学係数が大きく、異方性を持っている。本研究では、AgGaSe_2結晶の異方性を熱物性値の観点からアプローチした。

Technical report of IEICE. OPE 110(258), 113-116, 2010-10-21

CiNii Fulltext PDF - Limited References (6)
14

Properties analysis of chalcopyrite semiconductor AgGaSe_2 by optical measurement [in Japanese]

Nagaoka Akira , Yoshino Kenji

三元系カルコパイライト型半導体は、多元系という特性のためSiやGeといった元素半導体では得られない有益な物性値を持っている。特に、AgGaSe_2は、バンドギャップ1.8eV、大きな非線形光学係数、赤外域での高い透過率、光吸収係数10_5cm^<-1>オーダーというオプトエレクトロニクスデバイス応用に必要な物性値を持つ。本研究では、半導体物性の重要な項目の一つである欠陥準位と基礎物性値 …

Technical report of IEICE. OCS 110(257), 117-120, 2010-10-21

CiNii Fulltext PDF - Limited References (21)
15

Anisotropic thermal properties of chalcopyrite semiconductor AgGaSe_2 [in Japanese]

Nagaoka Akira , Yoshino Kenji

I-III-VI_2族カルコパイライト型半導体は、太陽電池をはじめ、LEDや非線形光学素子等のオプトエレクトロニクスデバイスに応用が可能である。特にAgGaSe_2結晶は、非線形光学係数が大きく、異方性を持っている。本研究では、AgGaSe_2結晶の異方性を熱物性値の観点からアプローチした。

Technical report of IEICE. OCS 110(257), 113-116, 2010-10-21

CiNii Fulltext PDF - Limited References (6)
16

Temperature Dependence of Bandgap Energy of AgGaSe2 Crystals [in Japanese]

Nagaoka Akira , Yoshino Kenji , Ikari Tetsuo

AgGaSe2 crystals were grown by Hot-Press method at 400～700℃ under 25 MPa for 1 hour. We measured temperature dependent X-ray diffraction (XRD) and photoluminescence (PL) of AgGaSe2 crystal prov …

Memoirs of the Faculty of Engineering, Miyazaki University 39, 83-89, 2010-09-30

IR
17

Electronic Structure and Characteristics of Chemical Bonds in CuInSe2, CuGaSe2, and CuAlSe2

Tsuyoshi Maeda , Takahiro Wada

… Electronic structural calculations of chalcopyrite-type CuInSe2 and its related compounds, CuGaSe2 and CuAlSe2, were performed by a recently proposed screened-exchange local density approximation (sX-LDA) method. … Therefore, electronic structural calculations of chalcopyrite-type CuInSe2 and related compounds were performed with an sX-LDA functional to obtain accurate electronic structure. …

Jpn J Appl Phys 49(4), 04DP07-04DP07-6, 2010-04-25

The Japan Society of Applied Physics
18

Recent Developments in Chalcopyrite Solar Cell and Module Technologies [in Japanese]

ISHIZUKA Shogo , KOMAKI Hironori , YOSHIYAMA Takashi , MIZUKOSHI Kazuyuki , YAMADA Akimasa , NIKI Shigeru

… Chalcopyrite Cu(In, Ga)Se2(CIGS) and related compounds belong to the semiconducting I-III-VI2 materials family and are most promising thin film solar cells which have demonstrated up to 20% cell efficiencies and over 15% module efficiencies to date. …

Journal of the Vacuum Society of Japan 53(1), 25-29, 2010-01-20

J-STAGE CrossRef References (18)
19

Microstructure and Impurities of Bronze Coin, Headongtongbo, Fabricated in the Korai Period (11^<th> Century) [in Japanese]

CHOI Jung Eun , KITADA Masahiro

Journal of the Japan Institute of Metals 74(1), 30-35, 2010-01-01

References (10)
20

Characteristics of Chemical Bonds in CuInSe_2, and its Thin Film Fabrication Processes used to Fabricate Solar Cells(<Special Issue>Crystals Science and Technology of Solar Cells Materials -Concentrated on Crystal Growth-) [in Japanese]

Wada Takahiro , Maeda Tsuyoshi

CuInSe_2(CIS)を用いた薄膜太陽電池が注目を集めている.CISはカルコパイライト型の結晶構造を持つI-III-VI_2族化合物半導体である.最近,このCISの電子構造や化学結合に関する研究が進み,従来のIII-V族やII-VI族化合物半導体と異なる特徴が明らかになってきた.本総合報告では,まずCISの電子構造と化学結合の特徴について概説し,次にCISの化学結合の特徴が太陽電池に用いられる …

Journal of the Japanese Association of Crystal Growth 36(4), 282-289, 2010-01

CiNii Fulltext PDF - Open Access References (31)

Search Results:　 1-20 of 482

Related Authors

Related Journals

Search Results: 1-20 of 482

Related Authors

Related Journals

Search Results:　 1-20 of 482