Kim Minji
,
Shin Min Jeong
,
Gwon Dongoh
,
Ahn Hyung Soo
,
Yi Sam Nyung
,
Kim Pan Seok
,
Yoon Sung Cheol
,
Lee Changjin
,
Park Jungsik
,
Shin Keesam
,
Ha Dong Han
,
Sawaki Nobuhiko
… The growth of GaN QDs was achieved by the hydride vapor phase epitaxy (HVPE) technique and P3HT film sequentially was coated on the top of QDs. … The overall performance of P3HT/GaN QDs hybrid heterojunction was analyzed by current density--voltage (J--V) characteristics and finally exhibited an open-circuit voltage, short-circuit current density, and fill factor of 160 mV, 3.6 mA/cm2, and 0.25, respectively. …
Jpn J Appl Phys 52(1), 01AD02-01AD02-4, 2013-01-25
The Japan Society of Applied Physics