検索結果 3613件中 1-20 を表示

  • Influence of the growth method on degradation of InGaN laser diodes

    Bojarska Agata , Muzioł Grzegorz , Skierbiszewski Czesław , Grzanka Ewa , Wiśniewski Przemysław , Makarowa Irina , Czernecki Robert , Suski Tadek , Perlin Piotr

    … We demonstrate the influence of the operation current density and temperature on the degradation rate of InGaN laser diodes grown via metalorganic vapor-phase epitaxy (MOVPE) and plasma-assisted molecular beam epitaxy (PAMBE). … The degradation rate of the MOVPE devices shows an exponential dependence on the temperature, with an activation energy of 0.38–0.43 eV, and a linear dependence on the operating current density. …

    Appl. Phys. Express 10(9), 091001, 2017-08-08

    応用物理学会

  • デシカント空調システムにおける外気の絶対湿度とシステム運転方式との関係

    石川 敏嗣 , 藤澤 一平 , 迫田 達也 , 林 則行

    … Co-generation system has become an effective method to solve the global warming and energy problem.The system can achieve high efficiency both by using electric generation and by exhaust heat recovery. … In this paper, experiments aimed at establishing system operation methods according to absolute humidity of outside air were conducted. …

    宮崎大學工學部紀要 46, 179-184, 2017-07-31

    機関リポジトリ

  • Dynamic resonant frequency control of ultrasonic transducer for stabilizing resonant state in wide frequency band

    Yokozawa Hiroki , Twiefel Jens , Weinstein Michael , Morita Takeshi

    … The resonant frequency can be shifted by a nonlinear effect or by increasing the temperature under high-power operation. … We propose a resonant frequency control method during the transducer’s operation that enables the dynamic compensation of resonant frequency shifts. …

    Jpn. J. Appl. Phys. 56(7S1), 07JE08, 2017-06-19

    応用物理学会

  • 25Gb/s直接変調レーザを搭載したTO-CANの広温度範囲動作 (レーザ・量子エレクトロニクス)

    白尾 瑞基 , 中村 誠希 , 島田 征明 , 鈴木 洋介 , 境野 剛 , 野上 正道

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117(61), 73-77, 2017-05-25

  • Low-temperature sol–gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage

    Yu Shang-Yu , Wang Kuan-Hsun , Zan Hsiao-Wen , Soppera Olivier

    … In this article, we propose a solution-processed high-performance amorphous indium–zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. … Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3 V and greatly increases the effective mobility 40-fold. …

    Jpn. J. Appl. Phys. 56(6), 060303, 2017-05-09

    応用物理学会

  • Controlling the threshold voltage of SnO

    Liu Huixuan , Tan Rongri

    … We fabricated novel dual in-plane-gate electric-double-layer (EDL) SnO<inf>2</inf>nanowire transistors gated by chitosan using only one transmission electron microscopy (TEM) nickel grid mask at room temperature, and we successfully controlled its threshold voltage. … Their operation voltage was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance (4.24 µF/cm<sup>2</sup>). …

    Jpn. J. Appl. Phys. 56(5), 055201, 2017-04-21

    応用物理学会

  • Investigation of multilayer SnSb

    He Zifang , Chen Shiyu , Wu Weihua , Zhai Jiwei , Song Sannian , Song Zhitang

    … The composition [SS (4 nm)/ZS (10 nm)]<inf>4</inf>exhibits a high crystallization temperature (T<inf>c</inf>∼ … 230 °C), high data retention temperature for 10 years (T<inf>10-yr</inf>∼ … A cell based on [SS (4 nm)/ZS (10 nm)]<inf>4</inf>achieves fast SET/RESET switching speed (∼10 ns) and low reset power consumption (the energy for RESET operation = 9.6 × …

    Appl. Phys. Express 10(5), 055504, 2017-04-07

    応用物理学会

  • Observation of persistent photoconductivity in Ni-doped MoS

    Ko Tsung-Shine , Chen Zheng-Wen , Lin Der-Yuh , Suh Joonki , Chen Zheng-Sheng

    … 10<sup>−7</sup>S cm<sup>−1</sup>at room temperature, which is lower than that of undoped MoS<inf>2</inf>(σ … We further fabricated undoped and Ni-doped MoS<inf>2</inf>photodetectors to understand the operation characteristics of MoS<inf>2</inf>-based photodetectors. …

    Jpn. J. Appl. Phys. 56(4S), 04CP09, 2017-03-24

    応用物理学会

  • Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

    Driche Khaled , Umezawa Hitoshi , Rouger Nicolas , Chicot Gauthier , Gheeraert Etienne

    … Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. … At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. …

    Jpn. J. Appl. Phys. 56(4S), 04CR12, 2017-03-15

    応用物理学会

  • Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

    Murakami Eiichi , Furuichi Takahiro , Takeshita Tatsuya , Oda Kazuhiro

    … Despite the advances in SiC-MOSFET technology in recent years, high-temperature stability remains a significant issue. … In this work, we examine the positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation (AC-PBTI). …

    Jpn. J. Appl. Phys. 56(4S), 04CR11, 2017-03-15

    応用物理学会

  • Bias temperature instability in tunnel field-effect transistors

    Mizubayashi Wataru , Mori Takahiro , Fukuda Koichi , Ishikawa Yuki , Morita Yukinori , Migita Shinji , Ota Hiroyuki , Liu Yongxun , O’uchi Shinichi , Tsukada Junichi , Yamauchi Hiromi , Matsukawa Takashi , Masahara Meishoku , Endo Kazuhiko

    … We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). … In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V<inf>th</inf>) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. …

    Jpn. J. Appl. Phys. 56(4S), 04CA04, 2017-03-15

    応用物理学会

  • Integrated pressure and temperature sensor with high immunity against external disturbance for flexible endoscope operation

    Maeda Yusaku , Maeda Kohei , Kobara Hideki , Mori Hirohito , Takao Hidekuni

    … In this study, an integrated pressure and temperature sensor device for a flexible endoscope with long-term stability in in vivo environments was developed and demonstrated. … The integrated temperature sensor allows compensation for the effect of the temperature drift on a pressure signal. … Pressure and temperature monitoring was achieved even in a pH 1 acid solution. …

    Jpn. J. Appl. Phys. 56(4S), 04CF09, 2017-03-14

    応用物理学会

  • Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFET

    Shintani Michihiro , Nakamura Yohei , Hiromoto Masayuki , Hikihara Takashi , Sato Takashi

    … Silicon carbide (SiC) is considered as one of the key materials to realizing device operations in high-temperature, high-frequency, and high-power applications. … By considering the operation of vertical power SiC MOSFETs, the proposed capacitance model correctly accounts for the capacitance modulation effect due to the channel that is formed when the gate voltage is higher than the drain voltage. …

    Jpn. J. Appl. Phys. 56(4S), 04CR07, 2017-03-01

    応用物理学会

  • 90 °C continuous-wave operation of GaInAsP/InP membrane distributed-reflector laser on Si substrate

    Hiratani Takuo , Inoue Daisuke , Tomiyasu Takahiro , Fukuda Kai , Amemiya Tomohiro , Nishiyama Nobuhiko , Arai Shigehisa

    … The temperature dependence of a GaInAsP/InP membrane distributed-reflector laser bonded on a Si substrate — … which showed a low threshold current (0.29 mA) and a relatively high differential quantum efficiency (23% from the front side) at 20 °C — … A characteristic temperature of the threshold current, T<inf>0</inf>, of 84 K and a sub-mA threshold current operation up to 90 °C were obtained under a continuous-wave (CW) condition. …

    Appl. Phys. Express 10(3), 032702, 2017-02-22

    応用物理学会

  • High-temperature operation of 640 nm wavelength high-power laser diode arrays

    Imanishi Daisuke

    … We realized the fabrication of a red semiconductor laser array with high optical power and reliability using an AlGaInP-based compound semiconductor. … To obtain a high optical output, the semiconductor laser requires high-quality quantum wells. … In this work, we improved quantum well layer abruptness by applying high-temperature growth condition to quantum wells. …

    Jpn. J. Appl. Phys. 56(3), 032702, 2017-02-16

    応用物理学会

  • 低温度差熱エネルギーを用いた超小型バイナリー発電プラントのNon-Squared Decouple PID制御

    韓 建榮 , 有田 護 , 池上 康之 , 李 羲頡

    … <p>This paper deals with the development of a 5kW ultra-compact binary power generation plant using low temperature difference thermal energy and a control system design method with high control performance using low electrical power consumption actuator. … It is necessary to save electrical power consumption of manipulated variables in the operation of the plant to realize the ultra-compact binary power generation. …

    電気学会論文誌. C 137(10), 1340-1352, 2017

    J-STAGE

  • Uniformity and Activity of Blast Furnace Hearth by Monitoring Flame Temperature of Raceway Zone

    Zhou Dongdong , Cheng Shusen , Zhang Ruixuan , Li Yan , Chen Tian

    … The uniformity and activity of hearth are very crucial to produce the high quality hot metal and prolong the campaign life of blast furnace, it also could influence the stability state and operation indexes of a blast furnace. … In this paper, the Uniformity Index and Activity Index in the peripheral direction and local regions were proposed to evaluate the hearth condition by measured the flame temperature of raceway zones in 2000 m<sup>3</sup> …

    ISIJ International 57(9), 1509-1516, 2017

    J-STAGE

  • Application of Microwave Enhanced Plasma to Control the Ignition Delay of Diesel Spray Combustion

    Paidala Srinivas , Minh Khoi Le , Wachi Yoshihiro , Ikeda Yuji

    … The effect of microwave enhanced plasma (MW Plasma) on ignition delay of diesel spray combustion was investigated inside a constant volume high pressure chamber. … High speed imaging of natural luminosity indicated an earlier appearance of flame in the with-plasma cases compared to the respective without-plasma conventional operation. …

    International Journal of Automotive Engineering 8(3), 137-142, 2017

    J-STAGE

  • High Performance Anode for Direct Cellulosic Biomass Fuel Cells Operating at Intermediate Temperatures

    Hibino Takashi , Kobayashi Kazuyo , Lv Peiling , Nagao Masahiro , Teranishi Shinya

    … An intermediate-temperature fuel cell could possibly realize such an operation; …

    Bulletin of the Chemical Society of Japan 90(9), 1017-1026, 2017

    J-STAGE

  • D4-2 Investigation of the Physical Ergonomic Conditions of the Operating Rooms in the Province of Izmir

    YASAK Kübra , VURAL Fatma

    … The average temperature of the operating rooms was found to be 20.29 ± 2.09°C and the average humidity was found to be 36.48 ± 14.40%. … During the operation, 29.3% of the operating rooms do not have high stools used for the purpose of allowing the health personnel to rest for a short period of time. …

    人間工学 53(Supplement2), S486-S489, 2017

    J-STAGE

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