検索結果 3563件中 1-20 を表示

  • Dynamic resonant frequency control of ultrasonic transducer for stabilizing resonant state in wide frequency band

    Yokozawa Hiroki , Twiefel Jens , Weinstein Michael , Morita Takeshi

    … The resonant frequency can be shifted by a nonlinear effect or by increasing the temperature under high-power operation. … We propose a resonant frequency control method during the transducer’s operation that enables the dynamic compensation of resonant frequency shifts. …

    Jpn. J. Appl. Phys. 56(7S1), 07JE08, 2017-06-19


  • 25Gb/s直接変調レーザを搭載したTO-CANの広温度範囲動作 (レーザ・量子エレクトロニクス)

    白尾 瑞基 , 中村 誠希 , 島田 征明 , 鈴木 洋介 , 境野 剛 , 野上 正道

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117(61), 73-77, 2017-05-25

  • Low-temperature sol–gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage

    Yu Shang-Yu , Wang Kuan-Hsun , Zan Hsiao-Wen , Soppera Olivier

    … In this article, we propose a solution-processed high-performance amorphous indium–zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. … Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3 V and greatly increases the effective mobility 40-fold. …

    Jpn. J. Appl. Phys. 56(6), 060303, 2017-05-09


  • Controlling the threshold voltage of SnO

    Liu Huixuan , Tan Rongri

    … We fabricated novel dual in-plane-gate electric-double-layer (EDL) SnO<inf>2</inf>nanowire transistors gated by chitosan using only one transmission electron microscopy (TEM) nickel grid mask at room temperature, and we successfully controlled its threshold voltage. … Their operation voltage was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance (4.24 µF/cm<sup>2</sup>). …

    Jpn. J. Appl. Phys. 56(5), 055201, 2017-04-21


  • Investigation of multilayer SnSb

    He Zifang , Chen Shiyu , Wu Weihua , Zhai Jiwei , Song Sannian , Song Zhitang

    … The composition [SS (4 nm)/ZS (10 nm)]<inf>4</inf>exhibits a high crystallization temperature (T<inf>c</inf>∼ … 230 °C), high data retention temperature for 10 years (T<inf>10-yr</inf>∼ … A cell based on [SS (4 nm)/ZS (10 nm)]<inf>4</inf>achieves fast SET/RESET switching speed (∼10 ns) and low reset power consumption (the energy for RESET operation = 9.6 × …

    Appl. Phys. Express 10(5), 055504, 2017-04-07


  • Observation of persistent photoconductivity in Ni-doped MoS

    Ko Tsung-Shine , Chen Zheng-Wen , Lin Der-Yuh , Suh Joonki , Chen Zheng-Sheng

    … 10<sup>−7</sup>S cm<sup>−1</sup>at room temperature, which is lower than that of undoped MoS<inf>2</inf>(σ … We further fabricated undoped and Ni-doped MoS<inf>2</inf>photodetectors to understand the operation characteristics of MoS<inf>2</inf>-based photodetectors. …

    Jpn. J. Appl. Phys. 56(4S), 04CP09, 2017-03-24


  • Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

    Driche Khaled , Umezawa Hitoshi , Rouger Nicolas , Chicot Gauthier , Gheeraert Etienne

    … Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. … At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. …

    Jpn. J. Appl. Phys. 56(4S), 04CR12, 2017-03-15


  • Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

    Murakami Eiichi , Furuichi Takahiro , Takeshita Tatsuya , Oda Kazuhiro

    … Despite the advances in SiC-MOSFET technology in recent years, high-temperature stability remains a significant issue. … In this work, we examine the positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation (AC-PBTI). …

    Jpn. J. Appl. Phys. 56(4S), 04CR11, 2017-03-15


  • Bias temperature instability in tunnel field-effect transistors

    Mizubayashi Wataru , Mori Takahiro , Fukuda Koichi , Ishikawa Yuki , Morita Yukinori , Migita Shinji , Ota Hiroyuki , Liu Yongxun , O’uchi Shinichi , Tsukada Junichi , Yamauchi Hiromi , Matsukawa Takashi , Masahara Meishoku , Endo Kazuhiko

    … We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). … In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V<inf>th</inf>) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. …

    Jpn. J. Appl. Phys. 56(4S), 04CA04, 2017-03-15


  • Integrated pressure and temperature sensor with high immunity against external disturbance for flexible endoscope operation

    Maeda Yusaku , Maeda Kohei , Kobara Hideki , Mori Hirohito , Takao Hidekuni

    … In this study, an integrated pressure and temperature sensor device for a flexible endoscope with long-term stability in in vivo environments was developed and demonstrated. … The integrated temperature sensor allows compensation for the effect of the temperature drift on a pressure signal. … Pressure and temperature monitoring was achieved even in a pH 1 acid solution. …

    Jpn. J. Appl. Phys. 56(4S), 04CF09, 2017-03-14


  • Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFET

    Shintani Michihiro , Nakamura Yohei , Hiromoto Masayuki , Hikihara Takashi , Sato Takashi

    … Silicon carbide (SiC) is considered as one of the key materials to realizing device operations in high-temperature, high-frequency, and high-power applications. … By considering the operation of vertical power SiC MOSFETs, the proposed capacitance model correctly accounts for the capacitance modulation effect due to the channel that is formed when the gate voltage is higher than the drain voltage. …

    Jpn. J. Appl. Phys. 56(4S), 04CR07, 2017-03-01


  • 90 °C continuous-wave operation of GaInAsP/InP membrane distributed-reflector laser on Si substrate

    Hiratani Takuo , Inoue Daisuke , Tomiyasu Takahiro , Fukuda Kai , Amemiya Tomohiro , Nishiyama Nobuhiko , Arai Shigehisa

    … The temperature dependence of a GaInAsP/InP membrane distributed-reflector laser bonded on a Si substrate — … which showed a low threshold current (0.29 mA) and a relatively high differential quantum efficiency (23% from the front side) at 20 °C — … A characteristic temperature of the threshold current, T<inf>0</inf>, of 84 K and a sub-mA threshold current operation up to 90 °C were obtained under a continuous-wave (CW) condition. …

    Appl. Phys. Express 10(3), 032702, 2017-02-22


  • High-temperature operation of 640 nm wavelength high-power laser diode arrays

    Imanishi Daisuke

    … We realized the fabrication of a red semiconductor laser array with high optical power and reliability using an AlGaInP-based compound semiconductor. … To obtain a high optical output, the semiconductor laser requires high-quality quantum wells. … In this work, we improved quantum well layer abruptness by applying high-temperature growth condition to quantum wells. …

    Jpn. J. Appl. Phys. 56(3), 032702, 2017-02-16


  • 微粉炭燃焼火力用低低温電気集じん装置の微粒子捕集性能

    野田 直希 , 水野 文菜 , 牧野 尚夫 , 塚田 まゆみ , 濱 尚矢 , Wuled Lenggoro , 神谷 秀博

    … An advanced low temperature ESP operated under 363 K has been used recently because of its availability for high electric resistivity coal ash. … In this study, the separation characteristics of fine coal ash particle by the control of operation condition on advanced low temperature ESP in a pulverized coal combustion boiler is investigated. …

    粉体工学会誌 54(6), 398-401, 2017


  • P-3-9 湿潤木質を燃料とするバイオマス熱供給プラントの性能評価

    新井 颯太 , 雨宮 隆 , 野間 毅

    … However, for regional energy use, woody biomass plants dedicated to heat supply according to the local thermal demand are considered to be advantageous in cost and operation. … In this study, we developed a mass-heat equilibrium simulation model for woody biomass heat supply plant which has a process to dry wet wood fuel by high temperature boiler exhaust gas. …

    日本エネルギー学会大会講演要旨集 26(0), 280-281, 2017


  • P-7-4 都市ごみ焼却炉ボイラの放射伝熱室における水噴射クリーニングシステム実証試験

    山本 裕介 , 武山 陽平 , 森下 桂樹 , 菅野 彰人 , 香山 貴弘 , 坂内 章裕 , 岩﨑 敏彦

    … <p>Removal of dusts on the boiler heating surface is one of the means for high-efficiency power generation in municipal solid waste incineration plants. … Generally, it is difficult to clean the radiation chamber of the boiler during operation, so that the flue gas temperature at outlet of radiation chamber increase. … which is an on-line cleaning system of the radiation chamber were carried out in a plant in operation. …

    日本エネルギー学会大会講演要旨集 26(0), 324-325, 2017


  • 5-2-4 火花点火ガス機関発電システムを用いた低温及び高温ガス化バイオガスによる運転特性

    小林 裕貴 , 王 嘉偉 , ゴンザレス ファン , 荒木 幹也 , 志賀 聖一

    … <p>This research assessed the operation characteristics of a spark-ignition engine generation system fueled with biogas. … Two kinds of biogas were used in this research, which were produced by high-temperature gasification and low-temperature gasification. … The high-temperature gasification biogas included higher fraction of N<sub>2</sub> …

    日本エネルギー学会大会講演要旨集 26(0), 192-193, 2017


  • 8-2-3 バイオ水素精製における低温脱塩剤の性能評価

    猿谷 豪都志 , 黒田 祥平 , 堂脇 清志 , 亀山 光男

    … <p>Bio-Hydrogen is a promising fuel for fuel cell operation by which eco-friendly power with a high efficiency is brought. … These impurities has to be removed for sustainable operation. … requires higher temperature range of 600-800°C. … However, our target is at low temperature range of 100-200°C. … : HAS-Clay =1.0:0.15 is more suitable at the reaction temperature of 200°C.</p> …

    日本エネルギー学会大会講演要旨集 26(0), 242-243, 2017


  • Uniformity and Activity of Blast Furnace Hearth by Monitoring Flame Temperature of Raceway Zone

    Zhou Dongdong , Cheng Shusen , Zhang Ruixuan , Li Yan , Chen Tian

    … The uniformity and activity of hearth are very crucial to produce the high quality hot metal and prolong the campaign life of blast furnace, it also could influence the stability state and operation indexes of a blast furnace. … In this paper, the Uniformity Index and Activity Index in the peripheral direction and local regions were proposed to evaluate the hearth condition by measured the flame temperature of raceway zones in 2000 m<sup>3</sup> …

    ISIJ International, 2017


  • Development of 4V-Class Bulk-Type All-Solid-State Lithium Rechargeable Batteries by a Combined Use of Complex Hydride and Sulfide Electrolytes for Room Temperature Operation

    Unemoto Atsushi , Nogami Genki , Tazawa Masaru , Taniguchi Mitsugu , Orimo Shin-ichi

    … <p>We have operated a 4V-class bulk-type, all-solid-state LiCoO<sub>2</sub>/Li battery at room temperature. … cycle remained as high as 83 mAh g<sup>−1</sup>, corresponding to a capacity retention ratio of nearly 90%.</p> …