Search Results:　 1-20 of 1187

Katori Yuichi , Igarashi Yasuhiko , Okada Masato , Aihara Kazuyuki

… We apply stability and bifurcation analyses to the macroscopic mean field model, and we find that the network exhibits a variety of dynamical structures, including ferromagnetic and paramagnetic states, as well as an oscillatory uniform state according to the parameters that specify the noise intensity and the properties of the dynamic synapses. …

J Phys Soc Jpn 81(11), 114007-114007-7, 2012-11-15

The Physical Society of Japan

Itino Yu , Ohta Takao

… Numerical simulations are carried out in two dimensions by changing the noise intensity and the particle density to obtain the phase diagram of the ordered and the disordered phases. …

J Phys Soc Jpn 81(10), 104007-104007-10, 2012-10-15

The Physical Society of Japan

Ide Tatsuro , Osawa Kentaro , Mikami Hideharu , Watanabe Koichi

… We theoretically and experimentally studied the effects of phase-diversity homodyne detection on the interlayer crosstalk of a multilayer optical disc by comparison with those of conventional intensity detection. … Interlayer crosstalk consists of two noises, the intensity of the stray light N_{1} and the interference between the signal and stray light N_{2}. …

Jpn J Appl Phys 51(8), 08JE01-08JE01-8, 2012-08-25

The Japan Society of Applied Physics

Chen Miao-Gen , Nakamura Keiji , Nakano Yoshitaka , Zhang Gao-Hui , Sugai Hideo

… By subtracting background plasma noise from the total one, respectable luminescence of GaN film can be successfully obtained. … After the plasma exposure, the near-band-edge emissions and yellow luminescence decrease but the blue luminescence intensity increases mainly due to the top surface damage of the GaN film. …

Applied Physics Express 5(7), 076201-076201-3, 2012-07-25

The Japan Society of Applied Physics

Muramatsu Toru , Miura Kensuke , Shiratori Yuta , Yatabe Zenji , Kasai Seiya

… Low-frequency noise in SiNx insulator--gate GaAs-based etched nanowire field-effect transistors (FETs) is investigated, focusing on the device size dependence and the effect of electron traps in the insulator. … Intensity of the drain current noise is found to systematically increase when the nanowire width and gate length decrease, as indicated by the conventional FET noise model. …

Jpn J Appl Phys 51(6), 06FE18-06FE18-5, 2012-06-25

The Japan Society of Applied Physics

武内 伸仁 , 作本 恭兵 , 桑村 有司 他

電子情報通信学会技術研究報告 : 信学技報 112(62), 53-56, 2012-05-25

小澤 佑介

電子情報通信学会技術研究報告 : 信学技報 112(50), 1-6, 2012-05-24

CHIYO Noritaka , KOMINE Yuji , TANAKA Yasuhiro , NISHIKATA Atsuhiro , HIRANO Takuichi , MAENO Takashi

… We have developed an electromagnetic field intensity distribution measurement system. … It is expected that this system is very useful for the evaluation of the electromagnetic noise emitted from electric devices. …

IEEJ Transactions on Fundamentals and Materials 132(5), 379-380, 2012-05-01

J-STAGE CrossRef References (3)

NAKAJIMA Hiroki , UEYAMA Tsuyoshi

… We compared two pulse sequences using the following: contrast, signal to noise ratio, the distortions, and magnetic resonance angiography (MRA) images. … The signal intensity ratio between blood vessel and fat was superior to the GRE-EPI. … Signal to noise ratio of GRE-EPI was inferior to GRE. …

Japanese Journal of Radiological Technology 68(4), 453-460, 2012-04-20

J-STAGE Ichushi Web CrossRef References (9)