Search Results:　 1-20 of 992

Sekine Tomoyuki , Suzuki Shintaro , Kikuchi Akihiko , Kishino Katsumi

… In thick quantum disks, the broad peaks reflect the density of states of the pristine phonon modes in GaN and AlN. … Several peaks of the confined, quasi-confined, and interface phonon modes are observed in thin quantum disks, which are peculiar modes in the superlattice structure. …

J Phys Soc Jpn 82(1), 014604-014604-7, 2013-01-15

The Japan Society of Applied Physics

Lu Weijie , Pey Kin Leong , Wang Xinpeng , Li Xiang , Chen Zhixian , Navab Singh , Leong Kam Chew , Gan Chee Lip , Tan Chuan Seng

… Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing steps on nickel silicide formation in the DSSB VSiNW diodes. …

Jpn J Appl Phys 51(11), 11PE08-11PE08-6, 2012-11-25

The Japan Society of Applied Physics

Yamaguchi Yuichiro , Shouji Masatsugu , Suda Yoshiyuki

… The current--voltage (I--V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I--V curve. … By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. …

Jpn J Appl Phys 51(11), 114201-114201-4, 2012-11-25

The Japan Society of Applied Physics

Mori Yuki , Shima Akio , Takeda Kenichi , Yamada Ren-ichi

… It was experimentally found that an interface state causes variable junction leakage (VJL), namely, random telegraph noise in a reverse-biased junction leakage current which is one result of off-state drain leakage in metal--oxide--semiconductor field-effect transistors (MOSFETs). … We prepared deep-submicron-scale MOSFETs of which the defect densities of the Si/SiO2 interface were controlled by the annealing conditions. …

Jpn J Appl Phys 51(10), 104101-104101-4, 2012-10-25

The Japan Society of Applied Physics

Bao Wujisiguleng , Ichimura Masaya

… The total density of states and the local density of states for each atoms are calculated for the CdS(001)/Cu2ZnSnS4(001) supercell. …

Jpn J Appl Phys 51(10), 10NC31-10NC31-4, 2012-10-25

The Japan Society of Applied Physics

Paosawatyanyong Boonchoat , Bhanthumnavin Worawan

… The results indicate that deep-lying and/or interface states of the CVD diamond SBDs, rather than the minority carrier storage effect in the CVD films, are responsible for the photoirradiation-dependent properties of diamond SBDs. …

Jpn J Appl Phys 51(9), 09MF05-09MF05-6, 2012-09-25

The Japan Society of Applied Physics

Yoshida Toshiyuki , Hashizume Tamotsu

… A high density of mid-gap states was found to be generated and increased during these ALD process steps, while the native oxide component was reduced. … The generation of the mid-gap states seemed to be relevant to a non-stoichiometric Al-oxide component associated with a deficit in oxygen atoms, which became re-oxidized during the annealing process. …

Applied Physics Letters 101(12), 122102, 2012-09-17

IR CrossRef

ISHII Masashi , TOWLSON Brian , HARAKO Susumu , ZHAO Xin-Wei , KOMURO Shuji , HAMILTON Bruce

… For this purpose, a structural modification using interface states in silicon oxide between TiO2:Sm and a conductive silicon substrate was used. … Since the interface states make a barrier to electrons in positive DC bias VDC, selective injection of holes into TiO2:Sm can be realized in VDC>0. …

IEEJ Transactions on Electronics, Information and Systems 132(8), 1255-1260, 2012-08-01

J-STAGE CrossRef References (13)

Oka Nobuto , Aoi Takafumi , Hayashi Ryo , Kumomi Hideya , Shigesato Yuzo

… Chemically bound hydroxyl groups were observed, and more hydroxyl bonds existed nearer to the interface between the substrate and film than in the film. … Furthermore, for a-IGZO films, subgap densities of states near valence band maxima increased with the H2O partial pressure during deposition, which can be attributed to defect-level generations due to H and O. …

Applied Physics Express 5(7), 075802-075802-3, 2012-07-25

The Japan Society of Applied Physics