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Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
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KANNO Isaku
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HAYASHI Shigenori
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KAMADA Takeshi
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KITAGAWA Masatoshi
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HIRAO Takashi
… By inserting lead-lanthanum-titanate (PLT) buffer layers between substrates and PZT films, the perovskite-PZT thin films could be epitaxially grown on (100)MgO, (100)Pt/MgO and (111)Pt/Ti/SiO_2/Si substrates, These films, even at thickness values of as low as 630 Å, showed excellent ferroelectric properties with a remanent polarization of 20 μC/cm^2, coercive field of 200 kV/cm, and a relative dielectric constant of 700. …
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 32(9B), 4057-4060, 1993-09-30
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