Zade Dariush
,
Kanda Takashi
,
Yamashita Koji
,
Kakushima Kuniyuki
,
Nohira Hiroshi
,
Ahmet Parhat
,
Tsutsui Kazuo
,
Nishiyama Akira
,
Sugii Nobuyuki
,
Natori Kenji
,
Hattori Takeo
,
Iwai Hiroshi
… We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. … The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal--oxide--semiconductor (MOS) capacitor was evaluated. … These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation. …
Jpn J Appl Phys 50(10), 10PD03-10PD03-4, 2011-10-25
The Japan Society of Applied Physics