Arulkumaran Subramaniam
,
Ng Geok Ing
,
Vicknesh Sahmuganathan
,
Wang Hong
,
Ang Kian Siong
,
Kumar Chandramohan Manoj
,
Teo Khoon Leng
,
Ranjan Kumud
… We have demonstrated 0.15-μm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal--oxide--semiconductor (CMOS)-compatible non-gold metal stack. …
Applied Physics Express 6(1), 016501-016501-3, 2013-01-25
The Japan Society of Applied Physics