Search Results:　 1-20 of 124

  • 1

    A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs  [in Japanese]

    KAWAI Yasufumi , UJITA Shinji , FUKUDA Takeshi , SAKAI Hiroyuki , UEDA Tetsuzo , TANAKA Tsuyoshi

    ミリ波 CMOS向けに、インバーテッドマイクロストリップライン(IMSL)を用いた新しいウェハレべルチップサイズパッケージ(WLCSP)を提案した。IMSLはCMOSプロセスの一部として形成された信号配線と、WLCSPの一部である低誘電体のポリべンゾオキサゾール(PBO)、Cu配線によるグランド層から構成される。チップは回路基板上にフリップチップ実装されるが、チップと回路基板の間がグランド層でシー …

    IEICE technical report. Microwaves 110(359), 87-90, 2011-01-06

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  • 2

    A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs  [in Japanese]

    KAWAI Yasufumi , UJITA Shinji , FUKUDA Takeshi , SAKAI Hiroyuki , UEDA Tetsuzo , TANAKA Tsuyoshi

    ミリ波 CMOS向けに、インバーテッドマイクロストリップライン(IMSL)を用いた新しいウェハレべルチップサイズパッケージ(WLCSP)を提案した。IMSLはCMOSプロセスの一部として形成された信号配線と、WLCSPの一部である低誘電体のポリべンゾオキサゾール(PBO)、Cu配線によるグランド層から構成される。チップは回路基板上にフリップチップ実装されるが、チップと回路基板の間がグランド層でシー …

    IEICE technical report. Electron devices 110(358), 87-90, 2011-01-06

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  • 3

    High-efficiency GaN-based monolithic inverter ICs  [in Japanese]

    森田 竜夫 , 梅田 英和 , 上本 康裕 [他]

    Panasonic technical journal 57(1), 15-19, 2011-04

  • 4

    A Method of Analog IC Placement with Common Centroid Constraints  [in Japanese]

    UE Keitaro , FUJIYOSHI Kunihiro

    … モノリシックICは、シリコンチップ上に一体構造として作り込まれた素子の素子値の絶対誤差は大きいが相対誤差は小さいことが知られている。 …

    Technical report of IEICE. VLD 110(210), 37-42, 2010-09-20

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  • 5

    A 90-Gb/s Modulator Driver IC Based on Functional Distributed Circuits for Optical Transmission Systems

    SUZUKI Yasuyuki , YAMAZAKI Zin , MAMADA Masayuki

    … A monolithic modulator driver IC based on InP HBTs with a new circuit topology — … The driver IC integrated with a 2: 1 multiplexing function produces 2.6-Vp-p (differential output: 5.2Vp-p) and 2.4-Vp-p (differential output: 4.8Vp-p) output-voltage swings with less than 450-fs and 530-fs rms jitter at 80Gb/s and 90Gb/s, respectively. … To the best of our knowledge, this is equivalent to the highest data rate operation yet reported for monolithic modulator drivers. …

    IEICE Transactions on Electronics 93(8), 1266-1272, 2010-08-01

    J-STAGE CrossRef References (26)

  • 6

    GaN Monolithic Inverter IC Using Normally-off Gate Injection Transistors  [in Japanese]

    MORITA Tatsuo , UMEDA Hidekazu , IKOSHI Ayanori , MATSUO Hisayoshi , SHIMIZU Jun , HIKITA Masahiro , YANAGIHARA Manabu , UEMTO Yasuhiro , UEDA Tetsuzo , TANAKA Tsuyoshi , UEDA Daisuke

    電気学会研究会資料. EDD, 電子デバイス研究会 2010(36), 25-29, 2010-03-26

    References (6)

  • 7

    A High-Efficient Transformer Using Bond Wires for Si RF IC

    CHO Eunil , LEE Sungho , LEE Jaejun , NAM Sangwook

    … This paper presents a design of a monolithic transformer using bond wires. …

    IEICE Transactions on Electronics 93(1), 140-141, 2010-01-01

    J-STAGE CrossRef References (2)

  • 8

    Fabrication and mechanical properties of high-dispersion-treated carbon nanofiber/alumina composites

    UEDA Naoki , YAMAKAMI Tomohiko , YAMAGUCHI Tomohiro , KITAJIMA Kunio , USUI Yuki , AOKI Kaoru , NAKANISHI Takefumi , MIYAJI Fumiaki , ENDO Morinobu , SAITO Naoto , TARUTA Seiichi

    … The maximum bending strength of the composites (1050 MPa) was approximately the same as the bending strength of monolithic alumina (1079 MPa). … The maximum fracture toughness of the composites was 5.9 MPa.m(0.5), which was a 69% increase compared with the fracture toughness of monolithic alumina (3.5 MPa.m(0.5)). …

    Journal of the Ceramic Society of Japan 118(1381), 847-854, 2010

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  • 9

    Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver  [in Japanese]

    FUKUYAMA Hiroyuki , ITOH Toshihiro , FURUTA Tomofumi , KURISHIMA Kenji , TOKUMITSU Masami , MURATA Koichi

    … 2チャンネル利得制御トランスインピーダンス増幅器ICをInP HBT集積回路技術を用いて開発した.利得最大時のS21は28dB,3dB帯域は19GHzであり,それから求められる差動トランスインピーダンス利得は68dBΩであった.本ICを利用すれば,2チャンネルバランス型受光器を1パッケージで構成することが可能となり,43Gbit/s光差動4値位相位相偏移変調(DQPSK)受信器を小型化することができる.また,EDCの利用も可能となり,従 …

    IEICE technical report. Electron devices 108(376), 89-94, 2009-01-07

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  • 10

    High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits  [in Japanese]

    WATANABE Issei , ENDOH Akira , MIMURA Takashi , MATSUI Toshiaki

    InP系高電子移動度トランジスタ(HEMT)はミリ波帯(30-300GHz)及びサブミリ波帯(300GHz-3THz)で動作可能で,将来の超高速無線通信用デバイスとしてだけでなく,ミリ波・サブミリ波帯における未利用周波数開発のキーデバイスとして注目されている.今回,ゲート長35nmのIn_<0.7>Ga_<0.3>As/In_<0.52>Al_<0.48& …

    IEICE technical report. Electron devices 108(376), 95-99, 2009-01-07

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  • 11

    Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver  [in Japanese]

    FUKUYAMA Hiroyuki , ITOH Toshihiro , FURUTA Tomofumi , KURISHIMA Kenji , TOKUMITSU Masami , MURATA Koichi

    … 2チャンネル利得制御トランスインピーダンス増幅器ICをInP HBT集積回路技術を用いて開発した.利得最大時のS21は28dB,3dB帯域は19GHzであり,それから求められる差動トランスインピーダンス利得は68dBΩであった.本ICを利用すれば,2チャンネルバランス型受光器を1パッケージで構成することが可能となり,43Gbit/s光差動4値位相位相偏移変調(DQPSK)受信器を小型化することができる.また,EDCの利用も可能となり,従 …

    IEICE technical report. Microwaves 108(377), 89-94, 2009-01-07

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  • 12

    High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits  [in Japanese]

    WATANABE Issei , ENDOH Akira , MIMURA Takashi , MATSUI Toshiaki

    InP系高電子移動度トランジスタ(HEMT)はミリ波帯(30-300GHz)及びサブミリ波帯(300GHz-3THz)で動作可能で,将来の超高速無線通信用デバイスとしてだけでなく,ミリ波・サブミリ波帯における未利用周波数開発のキーデバイスとして注目されている.今回,ゲート長35nmのIn_<0.7>Ga_<0.3>As/In_<0.52>Al_<0.48& …

    IEICE technical report. Microwaves 108(377), 95-99, 2009-01-07

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  • 13

    Development of 1200V level shifter device on SOI for HVIC  [in Japanese]

    Shiraki Satoshi , Yamada Akira

    … We have developed monolithic SOI type 1200V level shifter for inverter driver IC based on new design concept of cascaded 120V LDMOSFETs. … The concept is expected as the key technology enabling 1200V SOI 1-chip inverter driver IC for hard applications such as automotive electronics. …

    IEICE technical report. Electron devices 108(262), 81-87, 2008-10-16

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  • 14

    Merging monolithic integrated circuit with assembly board: trends of high density & high performance Jisso Technology  [in Japanese]

    本多 進

    マイクロエレクトロニクスシンポジウム論文集 18, 別冊8p, 2008-09-18

    Cited by (1)

  • 15

    Millimeter-Wave HEMT MMIC's Integrated with Metamaterials  [in Japanese]

    SANO Eiichi , INAFUNE Koji

    … 本報告では、ミリ波通信システムの課題とミリ波MMICの動向を概観した後、アンテナ内蔵MMICの小型化、高機能化を図るため、最近注目されているメタマテリアルのICへの集積化を提案する。 …

    IEICE technical report. Electron devices 107(355), 23-28, 2007-11-20

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  • 16

    Low-Power/High-Speed Digital/Analog ICs using an RTD-based MMIC Technology

    Yang Kyounghoon

    … This paper describes the recent results on new types of High-Speed/Low-Power NDR (Negative Differential Resistance) ICs based on a monolithic quantum-effect device technology of RTD/HBT. … As a representative digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC is presented with the related frequency divider performance. …

    IEICE technical report. Electron devices 107(110), 61-64, 2007-06-18

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  • 17

    Low-Power/High-Speed Digital/Analog ICs using an RTD-based MMIC Technology

    Yang Kyounghoon

    … This paper describes the recent results on new types of High-Speed/Low-Power NDR (Negative Differential Resistance) ICs based on a monolithic quantum-effect device technology of RTD/HBT. … As a representative digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC is presented with the related frequency divider performance. …

    Technical report of IEICE. SDM 107(111), 61-64, 2007-06-18

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  • 18

    High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer

    An Dan , Kim Sung-Chan , Lee Bok-Hyung , Lee Mun-Kyo , Kim Sam-Dong , Park Hyun-Chang , Rhee Jin-Koo

    … We report a high conversion gain millimeter-wave monolithic IC (MMIC) quadruple subharmonic mixer adopting a novel cascode harmonic generator for an improved conversion gain. …

    Jpn J Appl Phys 46(4A), 1452-1457, 2007-04-15

    The Japan Society of Applied Physics References (13)

  • 19

    InP DHBT Based IC Technology for over 80Gbit/s Data Communications(High-Speed HBTs and ICs,<Special Section>Heterostructure Microelectronics with TWHM2005)

    DRIAD Rachid , MAKON Robert E. , SCHNEIDER Karl , NOWOTNY Ulrich , AIDAM Rolf , QUAY Rudiger , SCHLECHTWEG Michael , MIKULLA Michael , WEIMANN Gunter

    … In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. … Using this technology, a set of mixed-signal IC building blocks for ≥80Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80Gbit/s and beyond. …

    IEICE transactions on electronics E89-C(7), 931-936, 2006-07-01

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  • 20

    Extremely Low Noise Characteristics of 0.15 μm Power Metamorphic High-Electron-Mobility Transistors

    Shim Jae Yeob , Yoon Hyung Sup , Kang Dong Min , Hong Ju Yeon , Lee Kyung Ho

    … The DC and RF characteristics of a 0.15 μm GaAs power metamorphic high electron mobility transistor (MHEMT) have been investigated and consequently, 77-GHz-band-low-noise-amplifier (LNA) millimeter-wave monolithic integrated circuits (MMICs) were fabricated using the 0.15 μm power MHEMT device. …

    Jpn J Appl Phys 45(4B), 3380-3383, 2006-04-30

    The Japan Society of Applied Physics