Search Results:　 1-20 of 296

Arulkumaran Subramaniam , Ng Geok Ing , Vicknesh Sahmuganathan , Wang Hong , Ang Kian Siong , Kumar Chandramohan Manoj , Teo Khoon Leng , Ranjan Kumud

… Si/Ta-based ohmic contact exhibited low contact resistance (R_{\text{c}}=0.24 \Omega\cdotmm) with smooth surface morphology. … The device Johnson's figure of merit (J-FOM = f_{\text{T}} \times BV_{\text{gd}}) is in the range between 3.51 to 3.83 THz\cdotV which are comparable to those of other reported GaN HEMTs on Si with a conventional III--V gold-based ohmic contact process. …

Applied Physics Express 6(1), 016501-016501-3, 2013-01-25

The Japan Society of Applied Physics

Jang Seon-Ho , Jang Ja-Soon

… We have investigated the carrier transport mechanism for nonalloyed Ni/Au ohmic contacts to p-In0.15Ga0.85N/GaN superlattices (SLs) and Mg delta (\delta)-doped GaN using current--voltage--temperature (I--V--T) and specific contact resistance--temperature (R_{\text{sc}}--T) data. … The p-SL and Mg \delta-doped GaN contacts show a linear I--V behavior, indicating that the Mg \delta doping in the GaN matrix as well as p-SL is very effective in improving the electrical properties of p-ohmic contacts. …

Jpn J Appl Phys 51(9), 09MK02-09MK02-3, 2012-09-25

The Japan Society of Applied Physics

Lee Jae-Gil , Park Bong-Ryeol , Lee Ho-Jung , Lee Minseong , Seo Kwang-Seok , Cha Ho-Young

… Great care was taken not only to optimize the field plate lengths but also to develop processing technologies such as mesa-first prepassivation, a recessed ohmic contact, and a sloped gate. … A breakdown voltage of 1590 V with a specific on-resistance of 1.86 m\Omega cm2 was achieved for the gate-to-drain distance of 15 μm in which the gate and drain field plate lengths were 2 and 1 μm, respectively. …

Applied Physics Express 5(6), 066502-066502-3, 2012-06-25

The Japan Society of Applied Physics References (21)

森塚 真由美 , 高田 賢治 , 松下 景一

東芝レビュー 67(6), 28-31, 2012-06-00

Wang Ronghua , Li Guowang , Verma Jai , Zimmermann Tom , Hu Zongyang , Laboutin Oleg , Cao Yu , Johnson Wayne , Gao Xiang , Guo Shiping , Snider Gregory , Fay Patrick , Jena Debdeep , Xing Huili (Grace)

… The effects of recess etch in alloyed ohmic contacts have been studied on InAl(Ga)N/AlN/GaN high-electron-mobility transistors (HEMTs) using a Si-containing ohmic metal stack. … The optimized contact resistance is as low as 0.23 $\Omega$ mm. …

Applied Physics Express 4(9), 096502-096502-3, 2011-09-25

The Japan Society of Applied Physics References (18)

Arulkumaran Subramaniam , Vicknesh Sahmuganathan , Ing Ng Geok , Selvaraj Susai Lawrence , Egawa Takashi

… The HEMTs with $L_{\text{gd}} = 10$ μm exhibited $\mathit{BV}_{\text{gd}}$ of 723 V with the specific on-resistance $R_{\text{DS[ON]}}$ of 1.3 m$\Omega$ cm2. … Due to the improved ohmic contact, the devices exhibited low $R_{\text{DS[ON]}}$ values. …

Applied Physics Express 4(8), 084101-084101-3, 2011-08-25

The Japan Society of Applied Physics References (21)

Ha Min-Woo , Roh Cheong Hyun , Hwang Dae Won , Choi Hong Goo , Song Hong Joo , Lee Jun Ho , Park Jung Ho , Seok Ogyun , Lim Jiyong , Han Min-Koo , Hahn Cheol-Koo

… The 1-μm-deep mesa and low-temperature annealing of ohmic contacts suppress the leakage current of GaN SBDs. … Annealing of ohmic contacts at 670 °C yields the low leakage current of 2.8 nA through the surface and the buffer. … When the anode--cathode distance is 5 μm, the fabricated GaN SBD successfully achieves a low forward voltage drop of 1.3 V at 100 A/cm2, low on-resistance of 4.00 m\Omega cm2, and the low leakage current of 0.6 A/cm2 at -100 V. …

Jpn J Appl Phys 50(6), 06GF17-06GF17-4, 2011-06-25

The Japan Society of Applied Physics

Katagiri Masayuki , Yamazaki Yuichi , Wada Makoto , Kitamura Masayuki , Sakuma Naoshi , Suzuki Mariko , Sato Shintaro , Nihei Mizuhisa , Kajita Akihiro , Sakai Tadashi , Awano Yuji

… The top electrode formation with good coverage on CNTs reduces contact resistance. … The current--voltage characteristics of ultrafine CNT via interconnects exhibit ohmic behavior. … The resistance of the CNT via interconnect is inversely proportional to the via area, indicating that the CNT bundles are grown with uniform quality and density in various-diameter via holes. …

Jpn J Appl Phys 50(5), 05EF01-05EF01-4, 2011-05-25

The Japan Society of Applied Physics