Search Results:　 1-20 of 108

Kosugi R. , Umeda T. , Sakuma Y. , 梅田 享英

… A thin oxide film (<5 Å) formed during annealing in an NO atmosphere on a (0001) 4H-SiC surface, incorporating nitrogen atoms into the interface region. … Even after complete removal of the oxide layer by etching in hydrofluoric acid, XPS spectra clearly showed a strong N 1 s peak, revealing the presence of fixed nitrogen atoms with an areal density of 1014 cm－2 in the interface region. …

Applied physics letters 99(18), 182111, 2011-11-00

IR CrossRef

MORISAWA Toshihiro , KOBAYASHI Hiromichi , TAKEDA Yukio

… For oxide-CMP process in semiconductor manufacturing, which requires high precision, Run-to-Run control has been developed. … Film-thickness is controlled based on a process model, which expresses the relation between polishing time and polished thickness. … In this paper, process model for oxide-film CMP with ceria slurry and the Run-to-Run control method in high volume manufacturing is described. …

Journal of the Japan Society for Precision Engineering 77(9), 868-872, 2011

J-STAGE CrossRef

Kaneko Yukihiro , Tanaka Hiroyuki , Kato Yoshihisa

… We fabricated a NOR-type memory cell composed of a ferroelectric-gate thin-film transistor (FeTFT) and an insulated gate thin-film transistor (TFT), which were a memory element and a select switch, respectively. … The FeTFT consisted of a heteroepitaxially stacked oxide structure of ZnO (n-type semiconductor)/Pb(Zr,Ti)O3 (PZT; … An insulated gate stack of Au/Ti (top-gate electrode)/SiNx (insulator) was formed on the ZnO film. …

Jpn J Appl Phys 48(9), 09KA19-09KA19-5, 2009-09-25

The Japan Society of Applied Physics

JHA Himendra , KIKUCHI Tatsuya , SAKAIRI Masatoshi , TAKAHASHI Hideaki

… Palladium-activation-based techniques for area-selective microscale metallization on porous oxide film of aluminum and complete metallization of the oxide/ hydroxide surface of aluminum are demonstrated. … For area-selective metallization, a porous anodic oxide film of aluminum was colored in an organic dye solution containing small amounts of palladium acetate. …

Journal of The Surface Finishing Society of Japan 60(3), 208-212, 2009-03-01

J-STAGE CrossRef References (12)

MORISAWA Toshihiro , ABE Hisahiko , TACHIKAWA Kousaku , NAKAJIMA Toshihiro

… This paper introduces a method of minimizing consumption in order to reduce the running cost of oxide-film CMP processes. … Three types of consumables are administrated and replaced based on control limits in use time and monitored removal rate. … However the combination of consumables' use times takes various effects on removal rate. …

Journal of Advanced Mechanical Design, Systems, and Manufacturing 3(1), 47-57, 2009

J-STAGE CrossRef

Kurokawa Yoshiaki , Hayashi Kounosuke , Nishimura Eriko , Saito Reiko , Maki Kunisuke

… A model of the brush scrub cleaning process is discussed from the view point that an oxide film is first formed on the wafer surface where no particles are adhered, and then grows laterally beneath the particles. … The force then applied by the brush scrubber overcomes the adhesion force between the particles and the wafer, which results in their removal when the oxide layer reaches a sufficient thickness. …

Jpn J Appl Phys 47(9), 7094-7100, 2008-09-25

The Japan Society of Applied Physics

Kim Kwang Ho , Kwon Sang Jik , Tak Tae Oh

… In the experiments, with the maskless laser direct patterning of indium tin oxide (ITO) films, the laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripplelike structure with the etched bottom compared with the chemically wet-etched ITO patterns. …

Jpn J Appl Phys 47(1), 197-201, 2008-01-25

The Japan Society of Applied Physics

LIU Zhongzhu , KUWABARA Mamoru , IWATA Yosihisa

… Sufficient removal of them during steelmaking process is difficult for copper and costly for sulfur. … Fine copper sulfides (less than 100 nm) are observed to co-exist with silicon oxide in samples even isothermally heat-treated at 1373 K for 1.44×104 s; … Film-like copper sulfides are generally observed to co-exist with iron sulfide in all samples; …

ISIJ International 47(11), 1672-1679, 2007-11-15

J-STAGE CrossRef References (33)

Lee Myung-Yoon , Kang Hyun-Goo , Kanemoto Manabu , Paik Ungyu , Park Jea-Gun

… Through chemical mechanical polishing (CMP) tests using polycrystalline silicon (polysilicon) and oxide blanket film wafers, the effects of alkaline agents added to colloidal silica slurries were investigated. … With increasing concentration of the alkaline agent, a decreasing trend after an initial increase in the polysilicon removal rate was found, along with a low oxide removal rate, enabling high selectivity. …

Jpn J Appl Phys 46(8A), 5089-5094, 2007-08-15

The Japan Society of Applied Physics