Search Results:  1-20 of 1330

  • 1

    Etching characteristics and mechanisms of Mo thin films in Cl

    Lim Nomin , Efremov Alexander , Yeom Geun , Choi Bok-Gil , Kwon Kwang-Ho

    … The etching characteristics and mechanism of Mo thin films in Cl<inf>2</inf>/Ar and CF<inf>4</inf>/Ar inductively coupled plasmas under the same operating conditions (pressure, 6 mTorr; … For both gas mixtures, an increase in the Ar fraction or gas pressure at a fixed gas mixing ratio was found to cause a non-monotonic change in the Mo etching rates. …

    Jpn. J. Appl. Phys. 53(11), 116201, 2014-10-02

    JSAP

  • 2

    Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis

    Kinoshita Keizo , Honjo Hiroaki , Fukami Shunsuke , Sato Hideo , Mizunuma Kotaro , Tokutome Keiichi , Murahata Michio , Ikeda Shoji , Miura Sadahiko , Kasai Naoki , Ohno Hideo

    … We investigate the effect of process-induced damage (PID) caused by reactive ion etching using methanol (Me–OH) gas on the magnetic properties of the CoFeB free layer in a magnetic tunnel junction with a perpendicular easy axis (p-MTJ), and on the tunnel magnetoresistance (TMR) ratio of CoFeB–MgO p-MTJs. …

    Jpn. J. Appl. Phys. 53(10), 103001, 2014-09-04

    JSAP

  • 3

    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN

    Moon Sung-Woon , Lee Jongsub , Seo Deokwon , Jung Sungdal , Choi Hong , Shim Heejae , Yim Jeong , Twynam John , Roh Sungwon

    … In the modified MOS-HFETs process, the surface passivation layer of SiN<inf>x</inf>is deposited by LPCVD after the mesa isolation step, while the gate is deposited and self-aligned in the trench etched in LPCVD-SiN<inf>x</inf>layer using inductively coupled plasma reactive ion etching (ICP-RIE). …

    Jpn. J. Appl. Phys. 53(8S3), 08NH02, 2014-07-14

    JSAP

  • 4

    Characteristics of reactive ion etching lag in HBr/O

    Park Wanjae , Lee WooHyun , Kim Wan-Soo , Kim Hyuk , Whang Ki-Woong

    Jpn. J. Appl. Phys. 53(3), 036502, 2014-02-03

    JSAP

  • 5

    Optically pumped lasing action in hexagonal GaN microdisk array fabricated via top-down process  [in Japanese]

    Suzuki Sho , Kouno Tetsuya , Yamano Koji , Kishino Katsumi , Hara Kazuhiko

    電子線描画と反応性イオンエッチングにより、GaN薄膜を微細加工することで、一辺1.5μm、高さ900nm程度の六角形状GaNマイクロディスクを、三角格子状に周期7.5μmで配列したマイクロディスクアレイを作製した。波長337.1nm、パルス幅900ps、周波数10Hzの光励起下で、このマイクロディスクアレイから波長370nm程度でのレーザー発振を得た。光共振器機構としては、各マイクロディスクでウィ …

    IEICE technical report. Electronic information displays 113(408), 29-31, 2014-01-17

    CiNii Fulltext PDF - Limited 

  • 6

    Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process

    Kawahara Toshio , Yamaguchi Satarou , Ohno Yasuhide , Maehashi Kenzo , Matsumoto Kazuhiko , Okamoto Kazumasa , Utsunomiya Risa , Matsuba Teruaki

    … We have grown CNW channels on several line and space patterns fabricated by electron beam lithography and reactive ion etching. …

    e-Journal of Surface Science and Nanotechnology 12(0), 225-229, 2014

    J-STAGE CrossRef

  • 7

    Micromachining of Titanium using a Desktop DRIE  [in Japanese]

    Yamada Shuji , Hitobo Takeshi , Sohgawa Masayuki , Abe Takashi

    … We found out high speed exhaust characteristic is indispensable in the etching of titanium, and the etching rate more than 0.2 µm/min (a maximum rate is 0.4 µm/min) was provided in a small amount of etching gas (SF6). …

    IEEJ Transactions on Sensors and Micromachines 134(4), 96-99, 2014

    J-STAGE CrossRef

  • 8

    Fabrication of Narrow-gapped Dual Si AFM Tips by Mechanically Polishing-back for Selective Trench Sidewalls Protection

    Kawashima Kenta , Makino Eiji , Mineta Takashi

    … A tetrahedral dual tip consisting of an inclined crystalline Si (111) plane and two dry-etched vertical planes was fabricated using deep reactive ion etching (D-RIE) to form a (110)-oriented narrow trench, thermal oxidation and additively refilling the trench with resin to protect the sidewalls, mechanically polishing-back the top resin and SiO2 layers to expose the Si (100) surface, and anisotropically etching the crystalline Si to form the (111) plane. …

    IEEJ Transactions on Sensors and Micromachines 134(4), 74-78, 2014

    J-STAGE CrossRef

  • 9

    Design and Verification of Quartz Resonators with Quasi-convex Structure

    Oigawa Hiroshi , Hayama Keisuke , Ji Jing , Ikezawa Satoshi , Ueda Toshitsugu

    … Then, prototypes of the quasi-convex resonators fabricated by deep reactive-ion etching and micro electro-mechanical systems fabrication technology are presented. …

    IEEJ Transactions on Sensors and Micromachines 134(3), 47-51, 2014

    J-STAGE CrossRef

  • 10

    Simultaneous Measurement of Bend Direction and Degree of Curvature using Micromachined Grating Fibers

    Kumazaki Hironori , Hiramatsu Munehiro , Oguri Hisakazu , Inaba Seiki , Hane Kazuhiro

    … The sensor has a serial arrangement of two fiber Bragg gratings (FBGs) with two different reflection center wavelengths and similar asymmetrical cross sections with different etching faces on an independent single-mode fiber. … These cross sections were fabricated by anisotropic reactive ion etching (RIE) using CF4 plasma. …

    IEEJ Transactions on Sensors and Micromachines 134(3), 41-46, 2014

    J-STAGE CrossRef

  • 11

    A Long Bar Type Silicon Resonator with a High Quality Factor

    Toan Nguyen Van , Toda Masaya , Kawai Yusuke , Ono Takahito

    … The structure of the silicon resonator is defined by deep reactive ion etching of the top Si layer of a silicon on insulator wafer, and then the patterned top Si layer is transferred onto a low temperature co-fired ceramic substrate. …

    IEEJ Transactions on Sensors and Micromachines 134(2), 26-31, 2014

    J-STAGE CrossRef

  • 13

    Fabrication of Silicon Pyramid-Nanocolumn Structures with Lowest Reflectance by Reactive Ion Etching Method

    Kong DaeYoung , Oh JungHwa , Pyo Daeseung , Kim Bonghwan , Cho ChanSeob , Lee JongHyun

    … We have developed nanosized structures on a silicon surface by the reactive ion etching method. … The purpose of this work is to fabricate pyramid-nanocolumn structures for crystalline silicon solar cells using a reactive ion etching (RIE) system with a metal mesh and to simulate surface texturing structures using the PC1D program. …

    Jpn J Appl Phys 52(6), 06GL06-06GL06-7, 2013-06-25

    JSAP

  • 14

    Fluorination of Graphene by Reactive Ion Etching System Using Ar/F

    Matsutani Akihiro , Tahara Kousuke , Iwasaki Takayuki , Hatano Mutsuko

    We demonstrated a novel fluorination process of graphene using Ar/F<inf>2</inf>plasma. We carried out characterization of the plasma-processed graphene with Raman spectroscopy. In addition …

    Jpn J Appl Phys 52(6), 06GD11-06GD11-3, 2013-06-25

    JSAP

  • 15

    Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes  [in Japanese]

    MORI Yuto , KATO Masashi , ICHIMURA Masaya

    SiCを用いた超高耐圧のバイポーラデバイスにおいて,キャリアライフタイムはデバイス性能を左右する重要なパラメータであり、表面再結合速度を見積もることはキャリアライフタイムを制御するために重要である.そこで本研究では,様々な加工処理を施した4H-SiCに対してキャリアライフタイム測定を行い,表面再結合速度を議論した.その結果,反応性イオンエッチング(RIE)を施すことによりキャリアライフタイムが小さ …

    IEICE technical report. Electron devices 113(39), 1-6, 2013-05-09

    CiNii Fulltext PDF - Limited 

  • 16

    Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes  [in Japanese]

    MORI Yuto , KATO Masashi , ICHIMURA Masaya

    SiCを用いた超高耐圧のバイポーラデバイスにおいて,キャリアライフタイムはデバイス性能を左右する重要なパラメータであり、表面再結合速度を見積もることはキャリアライフタイムを制御するために重要である.そこで本研究では,様々な加工処理を施した4H-SiCに対してキャリアライフタイム測定を行い,表面再結合速度を議論した.その結果,反応性イオンエッチング(RIE)を施すことによりキャリアライフタイムが小さ …

    Technical report of IEICE. SDM 113(41), 1-6, 2013-05-09

    CiNii Fulltext PDF - Limited 

  • 17

    Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes  [in Japanese]

    MORI Yuto , KATO Masashi , ICHIMURA Masaya

    SiCを用いた超高耐圧のバイポーラデバイスにおいて,キャリアライフタイムはデバイス性能を左右する重要なパラメータであり、表面再結合速度を見積もることはキャリアライフタイムを制御するために重要である.そこで本研究では,様々な加工処理を施した4H-SiCに対してキャリアライフタイム測定を行い,表面再結合速度を議論した.その結果,反応性イオンエッチング(RIE)を施すことによりキャリアライフタイムが小さ …

    IEICE technical report. Component parts and materials 113(40), 1-6, 2013-05-09

    CiNii Fulltext PDF - Limited 

  • 18

    Side-Illuminated Color Photosensor

    Ariyoshi Tetsuya , Baba Akiyoshi , Arima Yutaka

    … Because the side illumination method is used, the side of the test chip was etched using a high-speed deep reactive ion etching (D-RIE) process. …

    Jpn J Appl Phys 52(4), 04CE10-04CE10-6, 2013-04-25

    JSAP

  • 19

    Fabrication of Parylene-Based High-Aspect-Ratio Suspended Structure Using a Silicon-on-Insulator Wafer

    Kuo Wen-Cheng , Chen Chen-Wei

    … The reactive-ion etching (RIE) lag effect and notch effect are also considered in this paper. …

    Jpn J Appl Phys 52(3), 036501-036501-5, 2013-03-25

    JSAP

  • 20

    Reactive Ion Etching Texturing for Multicrystalline Silicon Solar Cells Using a SF

    Park Kwang Mook , Lee Myoung Bok , Jeon Kyeong Su , Choi Sie Young

    … Maskless random reactive ion etching (RIE) texturing employing a SF<inf>6</inf>/O<inf>2</inf>/Cl<inf>2</inf>gas mixture was investigated in order to achieve higher efficiencies in multicrystalline silicon (mc-Si) solar cells. …

    Jpn J Appl Phys 52(3), 03BD01-03BD01-7, 2013-03-25

    JSAP