Search Results:　 1-20 of 866

1

Less Reflective Sub-Wavelength Structure Formed on Textured Surface Using Nanosphere Mask

Lin Chiung-Wei , Juan Cheng-Chieh

… In this study, a new sub-wavelength structure was made on a textured surface by using nanolithography and reactive ion etching. …

Jpn J Appl Phys 52(1), 01AD03-01AD03-5, 2013-01-25

The Japan Society of Applied Physics
2

Industrial 6 Inch Multicrystalline Silicon Solar Cells Fabricated Using Reactive Ion Etching with Efficiency Exceeding 18%

Shim Ji-Myung , Lee Hyun-Woo , Cho Kyeong-Yeon , Lee Eun-Joo , Kim Ji-Soo , Kong Ji-Hyun , Jo Soo-Jeong , Kim Ji-Sun , Lee Hae-Seok

… To obtain a lower reflectance, we applied a maskless plasma texturing technique by reactive ion etching (RIE) to acid-textured multicrystalline silicon (mc-Si) wafer. … Owing to plasma-induced damage, unless the RIE-textured surface is subjected to proper damage removal etching (DRE), it shows drops in open circuit voltage (V_{\text{oc}}) and fill factor (FF). …

Jpn J Appl Phys 51(10), 10NA14-10NA14-4, 2012-10-25

The Japan Society of Applied Physics
3

SF6-Based Deep Reactive Ion Etching of (001) Rutile TiO2 Substrate for Photonic Crystal Structure with Wide Complete Photonic Band Gap

Matsutani Akihiro , Hayashi Mikiro , Morii Yasushi , Nishioka Kunio , Isobe Toshihiro , Nakajima Akira , Matsushita Sachiko

… We demonstrated the fabrication of a photonic crystal structure of a (001) rutile TiO2 substrate by deep reactive ion etching (RIE) using SF6 plasma. … A vertical etching profile and a smooth etched surface, which satisfy the requirements for optical device application, were obtained. …

Jpn J Appl Phys 51(9), 098002-098002-2, 2012-09-25

The Japan Society of Applied Physics
4

On-Chip High-Speed Actuation of Magnetically Driven Microtool with Fine V Groove Pattern [in Japanese]

HAGIWARA Masaya , KAWAHARA Tomohiro , IIJIMA Toru , ARAI Fumihito

… The Ni and Si composite fabrication was employed to form the optimum riblet shape by anisotropic Silicon (Si) wet etching and deep reactive ion etching. …

Journal of the Robotics Society of Japan 30(7), 727-734, 2012-09-15

J-STAGE CrossRef References (20)
5

Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes

Ito Tomoko , Karahashi Kazuhiro , Mizotani Kohei , Isobe Michiro , Kang Song-Yun , Honda Masanobu , Hamaguchi Satoshi

… In reactive ion etching (RIE) processes of vertical metal oxide semiconductor (MOS) devices, damages caused by ion bombardment at oblique incidence may affect the device performance. … The beam experiments and molecular dynamics simulations have shown that the depth of a Si damage layer caused by H+ ion injections has weak dependence on the angle of incidence. …

Jpn J Appl Phys 51(8), 08HB01-08HB01-4, 2012-08-25

The Japan Society of Applied Physics
6

Fabrication of Molds with 25-nm Dot-Pitch Pattern by Focused Ion Beam and Reactive Ion Etching for Nanoimprint Using Metallic Glass

Fukuda Yasuyuki , Saotome Yasunori , Nishiyama Nobuyuki , Saidoh Noriko , Makabe Eiichi , Inoue Akihisa

… The mold-fabricating process consisted of mask patterning by focused ion beam assisted chemical vapor deposition (FIB-CVD) and reactive ion etching (RIE). … We investigated the feasibility of a Pt-deposited metal etching mask on SiO2 on Si and diamond like carbon (DLC) on Al2O3 substrates, and achieved isolated convex nanodot arrays with a 25-nm pitch and an aspect ratio of 1.8 by RIE with O2 plasma on a DLC/Al2O3 substrate. …

Jpn J Appl Phys 51(8), 086702-086702-5, 2012-08-25

The Japan Society of Applied Physics
7

Dry Etching of Lead-Free (K,Na)NbO3 Piezoelectric Films by Ar/C4F8 Plasma

Horikiri Fumimasa , Shibata Kenji , Suenaga Kazufumi , Watanabe Kazutoshi , Nomoto Akira , Mishima Tomoyoshi , Kurokawa Fumiya , Kanno Isaku

… We investigated the dry-etching characteristics of lead-free (K,Na)NbO3 (KNN) thin films by inductively coupled plasma-reactive ion etching (ICP-RIE) using Ar/C4F8 as the reactive gas mixture. … The KNN etching depth showed a linear relationship as a function of the etching time with a few minutes' delay at the beginning. …

Jpn J Appl Phys 51(7), 076202-076202-4, 2012-07-25

The Japan Society of Applied Physics
8

Pattern Transfer Characterization after Double-Level Lithography for a Fabrication of the Three-Dimensional Aluminum Titanium Carbide Air Bearing Surface of the Hard Disk Slider

Pholprasit Patama , Atthi Nithi , Thammabut Thawat , Jeamsaksiri Wutthinan , Hruanun Charndet , Poyai Amporn , Silapunt Rardchawadee

… The transfer characteristics of the three-dimensional (3D) photoresist (PR) pattern to the aluminum titanium carbide (AlTiC) layer made for an air bearing surface (ABS) using the double-level lithography process and reactive ion etching (RIE) is investigated. …

Jpn J Appl Phys 51(6), 06FF08-06FF08-5, 2012-06-25

The Japan Society of Applied Physics
9

Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

Huh Jae-Hoon , Hermannstädter Claus , Akahane Kouichi , Jahan Nahid A. , Sasaki Masahide , Suemune Ikuo

… To select a small numbers of dots, we fabricate sub-micrometer sized mesas by electron beam lithography and reactive ion etching. … We show that the etching rate and resulting mesa shape of the In0.53Al0.22Ga0.25As epitaxial layer can be varied with the chamber pressure during the etching process. …

Jpn J Appl Phys 51(6), 06FF12-06FF12-5, 2012-06-25

The Japan Society of Applied Physics
10

Fabrication of Nanocone Subwavelength Antireflection Structures on Quartz Substrates

Tang Yu-Hsiang , Huang Mao-Jung , Su Jien-Yin , Shiao Ming-Hua

… This study combined self-assembled nanosphere lithography (SANL) and inductively coupled plasma reactive ion etching (ICP-RIE) for fabricating orderly arranged quartz nanocone arrays. … In addition, we evaluated various etching times of ICP-RIE for producing SWS surfaces, which resulted in various specific surface areas for the quartz substrates. …

Jpn J Appl Phys 51(6), 06FF06-06FF06-5, 2012-06-25

The Japan Society of Applied Physics
11

Novel Size Effect Phenomena in Single Crystal Silicon Nanowires

NAMAZU Takahiro , NAKAMURA Jun , HIGUCHI Kohei , MAENAKA Kazusuke

実験力学 : journal of JSEM 12(1), 8-12, 2012-03-28

References (11)
12

Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor

Ariyoshi Tetsuya , Uryu Noriyuki , Baba Akiyoshi , Arima Yutaka

… Because side illumination is used, the side of the chip is etched by high-speed deep reactive ion etching (D-RIE). …

Jpn J Appl Phys 51(2), 02BE01-02BE01-6, 2012-02-25

The Japan Society of Applied Physics
13

Performance Test and Evaluation of Multilevel Fresnel Zone Plate with Three-Step Profile Fabricated with Electron-Beam Lithography

Takeuchi Akihisa , Suzuki Yoshio , Uesugi Kentaro , Okada Ikuo , Iriguchi Hiroki

… The FZP is made by electron-beam lithography and reactive ion etching. …

Jpn J Appl Phys 51(2), 022502-022502-11, 2012-02-25

The Japan Society of Applied Physics
14

Fabrication of Serially-Grafted Polymer Optical Waveguide [in Japanese]

Sugihara Okihiro , Matsui Takayuki , Kaino Toshikuni , Komatsu Kyoji

ポリマーならではの特長を活かした簡便な光回路作製プロセスを用いて、アクティブポリマー光導波路、特に接合型光導波路の作製法について紹介する。ソフトリソグラフィー法と光架橋性高分子の直接露光法の組み合わせ技術は、パッシブポリマー光導波路作製簡易プロセスを適用していることから、時間・工程の短縮につながる。接合部一箇所当たりの接合損失は、0.007dB/pointであり、従来のプロセスによる接合損失と同等 …

Technical report of IEICE. OME 111(440), 43-46, 2012-02-10

CiNii Fulltext PDF - Limited
15

Multiple-Height Microstructure Fabricated by Deep Reactive Ion Etching and Selective Ashing of Resist Layer Combined with Ultraviolet Curing

Kumagai Shinya , Hikita Akiyoshi , Iwamoto Takuya , Tomikawa Takashi , Hori Masaru , Sasaki Minoru

… This selectivity can be combined with the deep reactive ion etching of Si, and a microstructure having three different etching depths is realized, thus forming a micromirror. …

Jpn J Appl Phys 51(1), 01AB04-01AB04-6, 2012-01-25

The Japan Society of Applied Physics
16

Nanostructuring of GdFeCo Thin Films for Laser Induced Magnetization Switching

Guyader L. Le , Moussaoui S. El , Mengotti E. , Heyderman L. J. , Nolting F. , Tsukamoto A. , Itoh A. , Kirilyuk A. , Rasing Th. , Kimel A. V.

… It is found that patterning the substrate via electron beam lithography combined with reactive ion etching before the actual magnetic layer deposition can produce a significant magnetic de-coupling between the obtained structures and their immediate magnetic surrounding. …

Journal of the Magnetics Society of Japan 36(1_2), 21-23, 2012

J-STAGE CrossRef
17

Large Angle Silicon-on-Insulator Tilting Actuator with Kinematic Excitation and Simple Integrated Parallel-Plate Electrostatic Transducer

Ya'akobovitz Assaf , Krylov Slava

… The actuator, which is distinguished by the single layer robust architecture and incorporating the simple integrated electrostatic transducer, was fabricated from a silicon-on-insulator (SOI) substrate using a common deep reactive ion etching (DRIE) based process. …

Jpn J Appl Phys 50(11), 117201-117201-8, 2011-11-25

The Japan Society of Applied Physics
18

Numerical Simulation Method for Plasma-Induced Damage Profile in SiO2 Etching

Kuboi Nobuyuki , Tatsumi Tetsuya , Kobayashi Shoji , Komachi Jun , Fukasawa Masanaga , Kinoshita Takashi , Ansai Hisahiro

… We developed a numerical simulation method for the depth profiles of plasma-induced physical damage to SiO2 and Si layers during fluorocarbon plasma etching. … In the proposed method, the surface layer is assumed to consist of two layers: a C--F polymer layer and a reactive layer. …

Jpn J Appl Phys 50(11), 116501-116501-9, 2011-11-25

The Japan Society of Applied Physics
19

Fabrication of Einzel Lens Array with One-Mask Reactive Ion Etching Process for Electron Micro-Optics

Miyashita Hidetoshi , Tomono Eiichi , Kawai Yusuke , Toda Masaya , Esashi Masayoshi , Ono Takahito

… In this paper, we report the fabrication of electron micro-optics by using deep reactive ion etching of three stacked silicon wafers. … The three 120-μm-thick silicon wafers stacked with cavities are etched by a direct cavity through etching technique, where each wafer is bonded with a 200-μm-thick glass with through holes, thus separated by a space in part. …

Jpn J Appl Phys 50(10), 106503-106503-5, 2011-10-25

The Japan Society of Applied Physics
20

Sub-Micron-Wide Surficial Trench Frames to Define the Coating Areas of Sensitive Layers on Silicon MEMS Resonant Chemical Sensors [in Japanese]

MURAKAMI Sunao , IKEHARA Tsuyoshi , KONNO Mitsuo , MAEDA Ryutaro , FUKAWA Tadashi , KIMURA Mutsumi , MIHARA Takashi

… The 500 nm-wide trench frames were fabricated on the silicon surfaces by deep-reactive ion etching process with the resist mask patterned by electron beam lithography. …

IEEJ Transactions on Sensors and Micromachines 131(8), 296-301, 2011-08-01

J-STAGE CrossRef References (13)

Search Results:　 1-20 of 866

Related Authors

Related Journals

Search Results: 1-20 of 866

Related Authors

Related Journals

Search Results:　 1-20 of 866