Search Results:　 1-20 of 54

1

Perspectives of Oxide Wide Band Gap Semiconductors : Possibility for Oxide Plasmonics [in Japanese]

田畑仁

機能材料 32(12), 43-49, 2012-12-00
2

High Mobility in a Stable Transparent Perovskite Oxide

Kim Hyung Joon , Kim Useong , Kim Hoon Min , Kim Tai Hoon , Mun Hyo Sik , Jeon Byung-Gu , Hong Kwang Taek , Lee Woong-Jhae , Ju Chanjong , Kim Kee Hoon , Char Kookrin

… In single crystals, the mobility reached 320 cm2 V-1 s-1 at a doping level of 8\times 10^{19} cm-3, constituting the highest value among wide-band-gap semiconductors. …

Applied Physics Express 5(6), 061102-061102-3, 2012-06-25

The Japan Society of Applied Physics References (28)
3

Progress and prospect of the growth of wide-band-gap group III nitrides : Development of the growth method for single-crystal bulk GaN [in Japanese]

AMANO Hiroshi

應用物理 81(6), 455-463, 2012-06-10

References (64)
4

Wide-band-gap nitride semiconductors play the leading role in energy saving and generation [in Japanese]

星陽一 , 栗原一彰 , 原直紀 , 森勇介

應用物理 81(6), 454, 2012-06-10
5

Etch Damage Characteristics of Wide Gap Semiconductors due to Synergy Effect of Plasma Ions and UV Lights [in Japanese]

川上烈生 , KAWAKAMI Retsuo

… Damage characteristics of wide gap semiconductors (n-GaN and TiO2) etched or exposed by lowtemperature plasmas have been studied. … This difference between the two semiconductors would be explained by synergyeffect of He plasmas ions and UV lights (which corresponds to TiO2 band gap energy) emitted. …

徳島大学大学院ソシオテクノサイエンス研究部研究報告 57, 9-16, 2012-00-00

IR
6

Wide Band-Gap Semiconductors : Bulk and Epitaxial Growth(The 40th National Conference on Crystal Growth (NCCG-40) and the 16th International Conference on Crystal Growth (ICCG-16)/the 14th International Conference on Vapor Growth and Epitaxy (ICVGE-14),News of JACG) [in Japanese]

纐纈明伯

Journal of the Japanese Association of Crystal Growth 37(3), 237, 2010-10-00

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7

Studies of Physical and Chemical Properties of Two-Dimensional Hexagonal Crystals by First-Principles Calculation

Shaoqing Wang

… The ab initio results of the crystallographic, elastic, and electronic band-gap parameters of C, Si, Ge, BN, CN, SiN, and SiC monolayers are presented. … All the four binary 2D crystals are semiconductors with wide band gaps. …

J Phys Soc Jpn 79(6), 064602-064602-5, 2010-06-15

The Physical Society of Japan
8

Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

Cheng-Yu Hu , Hiroyuki Nokubo , Masanari Okada , Jin-Ping Ao , Yasuo Ohno

… From the transient measurements, $\varPhi_{\text{S}}$ of the steady status was measured to be 4.2 eV, which is much larger than the band gap of GaN, indicating that no thermal equilibrium was achieved at the steady status. … It was suggested that the leakage through the oxide is too large compared with the electron–hole generation rate in this wide-band-gap semiconductor. …

Jpn J Appl Phys 49(4), 04DF11-04DF11-3, 2010-04-25

IR The Japan Society of Applied Physics
9

Wide-band-gap gallium oxide semiconductors [in Japanese]

FUJITA Shizuo , OSHIMA Takayoshi , KANEKO Kentaro

應用物理 78(12), 1150-1154, 2009-12-10

References (32)
10

Recent R & D of SiC wide band gap semiconductors: crystals, devises and power electronics applications [in Japanese]

荒井和雄

Materials integration 22(12), 25-30, 2009-12-00
11

Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

Wang Zhongchang , Tsukimoto Susumu , Saito Mitsuhiro , Ito Kazuhiro , Murakami Masanori , Ikuhara Yuichi

… The combined experimental and theoretical studies performed provide insight into the complex electronic and electric effects of the buried contact interface, which are fundamental for improving the contact in future electronics based on wide-band-gap semiconductors such as silicon carbide and diamond. …

PHYSICAL REVIEW B 80(24), 2009-12-00

IR CrossRef
12

3J1-5 Measurement of in-plane electric properties in a wide band-gap semiconductor by Brillouin scattering method(Physical Acoustics, Acousto-Optics) [in Japanese]

Yanagitani Takahiko , Sano Hiroyuki , Matsukawa Mami

… Wide band-gap semiconductors such as GaN, AlN, ZnO, etc. … To estimate the properties in the crystal with less than 1Ω・m, (which is general in intrinsic wide band-gap semiconductors), acoustic measurement above the GHz range is essential. …

Symposium on ultrasonic electronics (30), 417-418, 2009-11-18

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13

Measurement of in-plane electric properties in a piezoelectric semiconductor by Brillouin scattering method [in Japanese]

YANAGITANI Takahiko , SANO Hiroyuki , MATSUKAWA Mami

GaN,ZnOなどのワイドギャップ半導体のように,試料に圧電性がある場合,電気機械結合を利用して抵抗率を測定できる可能性がある.しかし実用的な1Ω・m以下の半導体を評価するにはGHz帯以上での音速測定が必要となる.本研究では,Brillouin散乱法によるGHz帯音速測定から微小領域における基板面内方向抵抗率を測定する方法について検討を行った.まずZnO単結晶の-50〜180℃の抵抗率温度特性の分 …

IEICE technical report. Ultrasonics 109(213), 59-64, 2009-09-22

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14

The trend of power semiconductors for Hybrid Electric Vehicles [in Japanese]

GEKINOZU Masakazu , TAKI Hiroshi , KIMURA Hideki

The Papers of Technical Meeting on Vehicle Technology, IEE Japan 2009(10), 31-36, 2009-01-26

References (22)
15

20aQE-5 Superconductivity in carrier-doped wide band-gap semiconductors [in Japanese]

Muranaka T. , Kikuchi Y. , Nakagawa A. , Ohno M. , Akimitsu J. , Kriener M. , Maeno Y. , Shirakawa N.

Meeting abstracts of the Physical Society of Japan 63(2-3), 440, 2008-08-25

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16

Degradation of Ga_2O_3-In_2O_3-ZnO (GIZO) Thin Film Transistor [in Japanese]

Fuji Mami , Yano Hiroshi , Hatayama Tomoaki , Uraoka Yukiharu , Fuyuki Takashi , Jung Ji Sim , Kwon Jang Yeon

我々は、DCストレス下におけるGa_2O_3-In_2O_3-ZnO (GIZO)薄膜トランジスタの劣化について調査した。正のゲートバイアスストレスにおいて、しきい値電圧はゲート電圧とゲートサイズに依存して顕著にシフトする。しかし、S値および電界効果移動度に変化は見られなかった。発熱解析の結果、ドレイン電流によるジュール発熱が観測された。注目すべきは、このモードがドレイン電圧およびドレイン電流によ …

Technical report of IEICE. SDM 108(1), 47-50, 2008-04-11

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17

Degradation of Ga_2O_3-In_2O_3-ZnO (GIZO) Thin Film Transistor [in Japanese]

Fuji Mami , Yano Hiroshi , Hatayama Tomoaki , Uraoka Yukiharu , Fuyuki Takashi , Jung Ji Sim , Kwon Jang Yeon

我々は、DCストレス下におけるGa_2O_3-In_2O_3-ZnO (GIZO)薄膜トランジスタの劣化について調査した。正のゲートバイアスストレスにおいて、しきい値電圧はゲート電圧とゲートサイズに依存して顕著にシフトする。しかし、S値および電界効果移動度に変化は見られなかった。発熱解析の結果、ドレイン電流によるジュール発熱が観測された。注目すべきは、このモードがドレイン電圧およびドレイン電流によ …

Technical report of IEICE. OME 108(2), 47-50, 2008-04-04

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18

Super-Paramagnetic Blocking Phenomena and Room-Temperature Ferromagnetism in Wide Band-Gap Dilute Magnetic Semiconductor (Ga, Mn)N

Sato Kazunori , Fukushima Tetsuya , Katayama-Yoshida Hiroshi

… We present computer simulations on the super-paramagnetic blocking phenomena in wide band-gap dilute magnetic semiconductors (DMSs) in particular (Ga, Mn)N. … $T_{\text{B}}$ higher than room temperature can be expected and the blocking phenomena explains reported ferromagnetic behaviour of wide band-gap DMS at high temperature. …

Jpn J Appl Phys 46(28), L682-L684, 2007-07-25

The Japan Society of Applied Physics
19

Improvement of High Voltage IC and its future prospects [in Japanese]

Terrashima Tomohide

80年代以降, パワーデバイスのプロセス/デバイス技術はICプロセス/デバイス技術に急速に近づき, その自然な帰結として, 高耐圧ICという形で両者の融合へのチャレンジとその機能的な可能性の追求がはじまった。本論文では現在に至るまでの高耐圧ICの発展を, 特に単体のパワー素子との関連の深いDC300V以上のものについて解説し, さらに現在開発が盛んになっている化合物系 (ワイドバンドギャップ) パ …

IEICE technical report. Electron devices 106(544), 23-28, 2007-02-22

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20

Fabrication of High-Mesa Waveguides Based on Wide-Band-Gap II–VI Semiconductors for Telecom Wavelength Applications

Akita Kazumichi , Akimoto Ryoichi , Li Bing Sheng , Hasama Toshifumi , Takanashi Yoshifumi

We fabricated high-mesa waveguides for application to inter-subband transition (ISBT) all-optical switches based on (CdS/ZnSe)/BeTe multiple-quantum well (MQW). These waveguides comprised a (CdS/ZnSe) …

Jpn J Appl Phys 46(1), 200-204, 2007-01-15

The Japan Society of Applied Physics References (17)

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