Xeを用いたスパッタリングによる大飽和磁化Baフェライト薄膜の作製と磁気特性 Preparation of Ba Ferrite Films with Large Saturation Magnetization by Xe Sputtering and Magnetic Properties
Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO.6.5Fe<SUB>2</SUB>O<SUB>3</SUB> using the facing targets sputtering apparatus. The gas mixture of Ar and Xe at 0.18 Pa and O<SUB>2</SUB> at 0.02 Pa was used as the sputtering gas and the dependences of crystallographic and magnetic characteristics on the partial Xe pressure Pxe (0.0-0.18 Pa) were investigated. Films deposited at various Px5 and at substrate temperature of 600°C were composed of BaM ferrite and spinel crystallites, and the minimum centerline average roughness R<SUB>a</SUB> of 8.9 nm was obtained at Pxe of 0.10 Pa and then the saturation magnetization 4πM<SUB>s</SUB>, of 5.1 kG and perpendicular anisotropy constant Ku1 of 4.23 × 10<SUP>5</SUP> J⋅m<SUP>-3</SUP> were larger than those of bulk BaM ferrite of 4.8 kG and 3.30 × 10<SUP>5</SUP> J⋅m<SUP>-3</SUP>, respectively. C-axis orientation was observed even for the film deposited at low T<SUB>s</SUB> of 475°C and 4πMs, perpendicular and in-plane coercivity, Hc<SUB>⊥</SUB>and H<SUB>c//</SUB>, were 4.7 kG, 2.38 and 0.19 kOe, respectively.
粉体および粉末冶金 43(1), 25-30, 1996-01-15
Japan Society of Powder and Powder Metallurgy