SiGe/PbTe系複合熱電材料の作製とその熱電特性 Fabrication and Thermoelectric Properties of SiGe/PbTe Thermoelectric Composites

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抄録

To improve the conversion efficiency of thermoelectric device, segment type combination of different thermoelectric materials is very effective. However, it is necessary to consider the thermal stress when different materials are joined. So it has been suggested to join SiGe(high performance at 900-1200K) to PbTe(high performance at 600-900K) through the SiGe/PbTe FGM layers. We studied thermoelectric properties of each of SiGe/PbTe composites of the SiGe/PbTe FGM layers. The result is as follows. Electrical resistivity of the SiGe/PbTe composites in the present study was about 1000 times greater than that of SiGe or PbTe single phase. Therefore, the figure of merits of the SiGe/PbTe composites rather degraded compared to those for each single phase. This undesirable results were interpreted to be caused by the change of electronic structure at the interface of SiGe and PbTe with slight interdiffusion into each components.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 43(3), 300-305, 1996-03-15

    Japan Society of Powder and Powder Metallurgy

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各種コード

  • NII論文ID(NAID)
    10002011543
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    3936694
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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