アーク溶解法によるB-C-Si系複合セラミックスの作製とその熱電性能 Preparation of B-C-Si System Composites by Arc Melting and their Thermoelectric Properties
B<SUB>4</SUB>C-SiC quasi-binary and B-C-Si ternary composites were prepared by arc melting in argon atmosphere using B<SUB>4</SUB>C, SiC, Si, B and C powders. Uniform lamella texture indicating eutectic reaction was observed at SiC molar content of 45 to 50mol% in the quasi-binary system. Free C and free Si co-precipitated at the C-rich and Si-rich side of the quasi-binary compositions, respectively. The thermoelectric figure of merit values (Z) of the B<SUB>4</SUB>C-SiC composites were generally greater than those of the C-rich and Si-rich composites. The SiC-B<SUB>4</SUB>C composites near the eutectic composition (40mol%SiC) showed the greatest Seebeck coefficient, electrical conductivity and Z values. The greatest ZT value of the B<SUB>4</SUB>C-SiC composites (40mol%SiC) at T=1100K was about 0.2.
粉体および粉末冶金 43(3), 311-315, 1996-03-15
Japan Society of Powder and Powder Metallurgy