プリカーサー法により合成されたセラミックスの結晶化 Crystallization of Ceramics Derived from Organic Precursors

この論文にアクセスする

この論文をさがす

著者

    • 西村 諭一 NISHIMURA Yuichi
    • 室蘭工業大学工学部材料物性工学科 Department of Materials Science and Engineering, Faculty of Engineering, Muroran Institute of Technology
    • 佐々木 眞 SASAKI Makoto
    • 室蘭工業大学工学部材料物性工学科 Department of Materials Science and Engineering, Faculty of Engineering, Muroran Institute of Technology
    • 向井田 健一 MUKAIDA Ken-ichi
    • 室蘭工業大学工学部材料物性工学科 Department of Materials Science and Engineering, Faculty of Engineering, Muroran Institute of Technology

抄録

Boron-containing Si-C-N-H polymers were fabricated. Amorphous ceramics were derived from the poly(silazane) and other organic polymer precursors. The precursor routes in this paper showed high ceramic yields in the range of 60 to 80%. Crystallization behavior of the boron-containing Si-C-N ceramics was investigated. The main crystalline phase was β-SiC. Crystalline size of the β-SiC decreased with increasing boron contents in the ceramics. And the X-ray intensity of the β-SiC also decreased with them. Heat treatment at 2373K in N<SUB>2</SUB> atmosphere introduced both β-SiC and free silicon, in the boron free Si-C-N ceramics and 1.6wt% boron-containing Si-C-N ceramics. 5.5wt% boron-containing Si-C-N ceramics showed crystalline phase of β-SiC and Si<SUB>3</SUB>N<SUB>4</SUB>. Boron may act as an inhibitant of both crystallization and decomposition of silicon nitride at high temperatures.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 43(3), 327-330, 1996-03-15

    Japan Society of Powder and Powder Metallurgy

参考文献:  4件中 1-4件 を表示

各種コード

  • NII論文ID(NAID)
    10002011630
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    3936699
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ