BaTiO_3系半導体磁器の微細構造と電気的特性 Microstructure and Electrical Properties of BaTiO_3-based Semiconductive Ceramics

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The effects of calcination conditions on the electrical properties of BaTiO<SUB>3</SUB>-based PTC thermistorshave been studied. Samples quenched from 1350°C showed significantly lower resistivity than those quenched from 1300°C. Over the same temperature range, a large amount of oxygen was evolved and a divergence between grain and grain boundary resistance was observed. The grain boundary phase is mainly composed of Ba, Ti and Si, and is Ti-poor and Si-rich compared with the grain composition. It was shown that the occurence of Ba-Si-Ti phases at the grain boundaries depends on calcining conditions. It is thought that the grain boundary phase plays an important role in causing semiconductivity in the samples, and therefore in controlling their electrical properties.

収録刊行物

  • 粉体および粉末冶金  

    粉体および粉末冶金 43(8), 1049-1054, 1996-08-15 

    Japan Society of Powder and Powder Metallurgy

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各種コード

  • NII論文ID(NAID)
    10002012956
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    4012532
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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