アーク溶解法で作製したケイ化ホウ素セラミックスの微細組織と熱電特性 Microstructure and Thermoelectric Property of Arc-melted Silicon Borides
Silicon borides were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiB<SUB>n</SUB>, and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB<SUB>4</SUB>, and as the result SiB<SUB>n</SUB>, -SiB<SUB>4</SUB> composites were obtained. The SiB<SUB>n</SUB>-SiB<SUB>4</SUB> composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.
粉体および粉末冶金 44(1), 55-59, 1997-01-15
Japan Society of Powder and Powder Metallurgy