アーク溶解法で作製したケイ化ホウ素セラミックスの微細組織と熱電特性 Microstructure and Thermoelectric Property of Arc-melted Silicon Borides

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Silicon borides were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiB<SUB>n</SUB>, and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB<SUB>4</SUB>, and as the result SiB<SUB>n</SUB>, -SiB<SUB>4</SUB> composites were obtained. The SiB<SUB>n</SUB>-SiB<SUB>4</SUB> composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 44(1), 55-59, 1997-01-15

    Japan Society of Powder and Powder Metallurgy

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各種コード

  • NII論文ID(NAID)
    10002013274
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    4118699
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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