光交流法によるゼーベック係数の迅速測定 Rapid Measurement of Seebeck Coefficient by an AC Method

この論文にアクセスする

この論文をさがす

著者

抄録

An ac method for the measurement of the Seebeck coefficient was developed. Specimens were heated periodically at frequencies in the range 0.2 - 10 Hz using a semiconductor laser. The small temperature increase and the resultant thermoelectric power were measured with a Pt-Pt13%oRh, thermocouple (25 μm in diameter) through a lock-in amplifier. The Seebeck coefficient of a Pt<SUB>90</SUB>Rh<SUB>10</SUB> foil measured by the ac method was in agreement with that obtained from the standard table. The optimum frequency and specimen thickness for the ac method were 0.2 Hz and 0.1 - 0.2 mm, respectively. The Seebeck coefficients of silicon single crystal and several thermoelectric semiconductors (Si<SUB>80</SUB>Ge<SUB>20</SUB>, PbTe, FeSi<SUB>2</SUB>, SiB<SUB>14</SUB>) measured by the ac method agreed with those measured by a conventional dc method in the temperature range between room temperature and 1200 K. The time needed for each measurement was less than a few tens of minutes, significantly shorter than that for a conventional dc method.

収録刊行物

  • 粉体および粉末冶金  

    粉体および粉末冶金 44(1), 65-69, 1997-01-15 

    Japan Society of Powder and Powder Metallurgy

参考文献:  11件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10002013302
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    4118701
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ