AlN基板のメタライジング Study on Metallizing of AlN Ceramic Substrate

この論文にアクセスする

この論文をさがす

著者

抄録

AlN ceramic is used as the package material instead of Al<SUB>2</SUB>O<SUB>3</SUB> for microelectronics application fields because having high thermal conductivity, thermalstabi1ity, thermal expansion coefficient same as silicon high electrical resistance, low dielectric constant and so on. It is difficult to make a metallizing layer because of AlN is covalent bonded compound. We tried todeposit a copper film with RF sputtering method on to an oxidized top surface with ionic bonded Al<SUB>2</SUB>O<SUB>3</SUB> ultra thin layer on AlN ceramic, and measured the adhesion.<BR>The samples which were processed in the oxidation for 5 hour in air at 1173K gave a maximum value, 956 kg/CM<SUP>2</SUP>, in the adhesion. The decrease of the heat resistance by the oxidation process was not observed.

収録刊行物

  • 粉体および粉末冶金  

    粉体および粉末冶金 44(2), 190-193, 1997-02-15 

    Japan Society of Powder and Powder Metallurgy

参考文献:  3件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10002013517
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    4139934
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ