AlN基板のメタライジング Study on Metallizing of AlN Ceramic Substrate
AlN ceramic is used as the package material instead of Al<SUB>2</SUB>O<SUB>3</SUB> for microelectronics application fields because having high thermal conductivity, thermalstabi1ity, thermal expansion coefficient same as silicon high electrical resistance, low dielectric constant and so on. It is difficult to make a metallizing layer because of AlN is covalent bonded compound. We tried todeposit a copper film with RF sputtering method on to an oxidized top surface with ionic bonded Al<SUB>2</SUB>O<SUB>3</SUB> ultra thin layer on AlN ceramic, and measured the adhesion.<BR>The samples which were processed in the oxidation for 5 hour in air at 1173K gave a maximum value, 956 kg/CM<SUP>2</SUP>, in the adhesion. The decrease of the heat resistance by the oxidation process was not observed.
粉体および粉末冶金 44(2), 190-193, 1997-02-15
Japan Society of Powder and Powder Metallurgy