ＡｌＮ基板のメタライジング

• 矢口 理英子

  龍谷大学大学院理工学研究科

• 上條 栄治

  龍谷大学理工学部

書誌事項

タイトル別名

• Study on Metallizing of AlN Ceramic Substrate.
• AlN キバン ノ メタライジング

抄録

AlN ceramic is used as the package material instead of Al₂O₃ for microelectronics application fields because having high thermal conductivity, thermalstabi1ity, thermal expansion coefficient same as silicon high electrical resistance, low dielectric constant and so on. It is difficult to make a metallizing layer because of AlN is covalent bonded compound. We tried todeposit a copper film with RF sputtering method on to an oxidized top surface with ionic bonded Al₂O₃ ultra thin layer on AlN ceramic, and measured the adhesion.<BR>The samples which were processed in the oxidation for 5 hour in air at 1173K gave a maximum value, 956 kg/CM², in the adhesion. The decrease of the heat resistance by the oxidation process was not observed.

収録刊行物

• 粉体および粉末冶金

  粉体および粉末冶金 44 (2), 190-193, 1997

  一般社団法人 粉体粉末冶金協会

キーワード

• AlN
• metallaizing
• surface oxidation
• RF sputtering
• heat treatment

詳細情報

• CRID: 1390001206308943488
• NII論文ID: 10002013517
• NII書誌ID: AN00222724
• DOI: 10.2497/jjspm.44.190
• ISSN: 18809014
• ISSN: 05328799
• NDL書誌ID: 4139934
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4139934
• 本文言語コード: ja
• データソース種別:
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