常圧焼結によるB_4C添加SiC系複合材料の作製と評価 [in Japanese] Fabrication by Pressureless Sintering and Evaluation of SiC/B_4C Composites [in Japanese]
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Effect of micronsize-B<SUB>4</SUB>C dispersion on the sintering behavior and microstructures of SiC has been investigated for the SiC/B<SUB>4</SUB>C composite prepared by pressureless sintering technique. Especially relation between sintering additives and the sintering behavior of SiC/B<SUB>4</SUB>C composite was studied.<BR>Nearly fully dense composites were obtained by the pressureless sintering technique in argon atmosphere at 2250-2300°C for lh of holding time. From SEM and TEM observations of the microstructure for these SiC/B<SUB>4</SUB>C composites, the dispersion of micronsize-B<SUB>4</SUB>C as the second phase into SiC matrix was found to inhibit SiC grain growth. In the case of SiC/B<SUB>4</SUB>C composite system prepared by the pressureless sintering technique, SiC matrix showed the rod-like grain up to 10 vol% of B<SUB>4</SUB>C addition. With the addition of 20% B<SUB>4</SUB>C, the morphology of SiC matrix grain was relatively round and fine. Furthermore, HREM observation showed no reaction phase at grain boundary of SiC matrix grain and B<SUB>4</SUB>C dispersion. The hardness was also evaluated for these SiCB<SUB>4</SUB>C composite system.
- J. Jpn. Soc. Powder Powder Metallurgy
J. Jpn. Soc. Powder Powder Metallurgy 44(12), 1078-1082, 1997-12-15
Japan Society of Powder and Powder Metallurgy