Structure and Some Physical Properties of In_2O_3 Films Deposited on In_2O_3 Substrates

この論文にアクセスする

この論文をさがす

著者

抄録

Indium oxide films were reactively deposited on the indium oxide substrates at 25-100°C. The influence of the substrate on the film structure and the physical properties was studied. The structure of the films was greatly dependent of the freshness of the substrate surface. Crystallized films could be deposited even at room temperature on the fresh substrates. On the air-exposed substrates, films were amorphous at room temperature, and partially crystallized at the higher substrate temperatures. The influence of the substrate on the electrical resistivity and optical transmission of the films was described. The effect of the heat-treatment of the air-exposed substrates on the film structure was also studied. Further, the contamination of the substrate surface was investigated by X-ray photoelectron spectroscopy. The results suggested that the surface of the substrates was refreshed by heating in vacuum at and above 300°C.

収録刊行物

  • 粉体および粉末冶金  

    粉体および粉末冶金 45(1), 93-97, 1998-01-15 

    Japan Society of Powder and Powder Metallurgy

参考文献:  12件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10002014981
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    4392672
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ