Structure and Some Physical Properties of In_2O_3 Films Deposited on In_2O_3 Substrates
Indium oxide films were reactively deposited on the indium oxide substrates at 25-100°C. The influence of the substrate on the film structure and the physical properties was studied. The structure of the films was greatly dependent of the freshness of the substrate surface. Crystallized films could be deposited even at room temperature on the fresh substrates. On the air-exposed substrates, films were amorphous at room temperature, and partially crystallized at the higher substrate temperatures. The influence of the substrate on the electrical resistivity and optical transmission of the films was described. The effect of the heat-treatment of the air-exposed substrates on the film structure was also studied. Further, the contamination of the substrate surface was investigated by X-ray photoelectron spectroscopy. The results suggested that the surface of the substrates was refreshed by heating in vacuum at and above 300°C.
粉体および粉末冶金 45(1), 93-97, 1998-01-15
Japan Society of Powder and Powder Metallurgy