高周波スパッタ法によるFe/AlN多層膜の成膜条件と物性 [in Japanese] Preparation Conditions of rf-Sputter Deposited Fe/AlN Multilayered Thin Films and Their Properties [in Japanese]
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Formation of iron nitride was observed on Fe metal film rf-sputter deposited on polycrystalline AIN substrate as already reported on Fe metal/amorphous AIN multilayer. It was not found on the AIN thin film deposited on Fe metal substrate. These results suggest that Fe reacts with even crystallized AIN at their interface but that the iron nitride was not formed by nitrogen plasma during a reaction sputter deposition of AIN thin film. Multilayered Fe/ AIN thin films were also prepared by rf-sputter deposition changing applied rf-power at 30W and 100W. Giant magnetization component was observed at the multilayered interface because of the iron nitride formed by a solid state reaction between Fe and AIN. Small amount of nitrogen in AIN was assumed to be supplied to a-Fe forming a gradient of nitrogen content at the interface.
- J. Jpn. Soc. Powder Powder Metallurgy
J. Jpn. Soc. Powder Powder Metallurgy 45(3), 253-256, 1998-03-15
Japan Society of Powder and Powder Metallurgy