高周波スパッタ法によるFe/AlN多層膜の成膜条件と物性 Preparation Conditions of rf-Sputter Deposited Fe/AlN Multilayered Thin Films and Their Properties

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Formation of iron nitride was observed on Fe metal film rf-sputter deposited on polycrystalline AIN substrate as already reported on Fe metal/amorphous AIN multilayer. It was not found on the AIN thin film deposited on Fe metal substrate. These results suggest that Fe reacts with even crystallized AIN at their interface but that the iron nitride was not formed by nitrogen plasma during a reaction sputter deposition of AIN thin film. Multilayered Fe/ AIN thin films were also prepared by rf-sputter deposition changing applied rf-power at 30W and 100W. Giant magnetization component was observed at the multilayered interface because of the iron nitride formed by a solid state reaction between Fe and AIN. Small amount of nitrogen in AIN was assumed to be supplied to a-Fe forming a gradient of nitrogen content at the interface.

収録刊行物

  • 粉体および粉末冶金  

    粉体および粉末冶金 45(3), 253-256, 1998-03-15 

    Japan Society of Powder and Powder Metallurgy

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各種コード

  • NII論文ID(NAID)
    10002015238
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    4447670
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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