メカニカルアロイングにより合成したp型Si_<80>Ge_<20>焼結体の熱電特性 Thermoelectric Properties of Mechanically Alloyed p-type Si_<80>Ge_<20>

この論文にアクセスする

この論文をさがす

著者

抄録

The key to improving the thermoelectric figure of merit of Si-Ge sytem is to reduce the thermal conductivity. Alloy powder with grain size of 20-30nm was prepared by mechanical alloying. The amounts of boron was varied to achieve optimum carrier concentration. The thermoelectric properties of the hot-pressed Si-Ge alloys were measured in the temperature range from 300 K to 1073 K.<BR>The sintered Si-Ge compact was found to have a fine grain structure of about 200 nm. As a consequence, a reduction in thermal conductivity of up to 30% was achieved compared to conventional p-type alloy. A maximum figure of merit of 9×10<SUP>-4</SUP>K<SUP>-1</SUP>was obtained at 1073K.

収録刊行物

  • 粉体および粉末冶金  

    粉体および粉末冶金 45(8), 733-737, 1998-08-15 

    Japan Society of Powder and Powder Metallurgy

参考文献:  9件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10002052565
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    4540064
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ