Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter

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抄録

A PMOS transistor that is commercially available device can function as a practical radiation dosimeter for high dose. A new dosimetric parameter, that is shift rate of drain current, is proposed and demonstrated to reduce the possible errors of measurement. The calibration curve of dosimetric parameter vs. radiation dose shows a very linear characteristic. Some modifications were suggested to compensate the room temperature effects. The gate bias can be applied to further increase the dosimetric sensitivity and extend the dose of radiation measurement to a lower range.

収録刊行物

  • Journal of nuclear science and technology  

    Journal of nuclear science and technology 34(10), 992-995, 1997-10-25 

    Atomic Energy Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002078269
  • NII書誌ID(NCID)
    AA00703720
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    00223131
  • NDL 記事登録ID
    4326333
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A460
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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